JP4347325B2 - 単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置 - Google Patents

単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置 Download PDF

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Publication number
JP4347325B2
JP4347325B2 JP2006217609A JP2006217609A JP4347325B2 JP 4347325 B2 JP4347325 B2 JP 4347325B2 JP 2006217609 A JP2006217609 A JP 2006217609A JP 2006217609 A JP2006217609 A JP 2006217609A JP 4347325 B2 JP4347325 B2 JP 4347325B2
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JP
Japan
Prior art keywords
single crystal
crucible
sic
raw material
susceptor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2006217609A
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English (en)
Japanese (ja)
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JP2008037724A (ja
Inventor
真憲 碇
徹 金庭
孝夫 阿部
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2006217609A priority Critical patent/JP4347325B2/ja
Priority to TW096118327A priority patent/TW200817543A/zh
Priority to PCT/JP2007/064968 priority patent/WO2008018321A1/ja
Priority to KR1020087023690A priority patent/KR20090037379A/ko
Publication of JP2008037724A publication Critical patent/JP2008037724A/ja
Application granted granted Critical
Publication of JP4347325B2 publication Critical patent/JP4347325B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2006217609A 2006-08-10 2006-08-10 単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置 Expired - Fee Related JP4347325B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006217609A JP4347325B2 (ja) 2006-08-10 2006-08-10 単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置
TW096118327A TW200817543A (en) 2006-08-10 2007-05-23 Single crystal SiC, and production method and production device thereof
PCT/JP2007/064968 WO2008018321A1 (fr) 2006-08-10 2007-07-31 MONOCRISTAL SiC, PROCÉDÉ DE PRODUCTION DE CELUI-CI ET APPAREIL DE PRODUCTION DE MONOCRISTAL SiC
KR1020087023690A KR20090037379A (ko) 2006-08-10 2007-07-31 단결정 ＳｉＣ, 그 제조 방법 및 단결정 ＳｉＣ의 제조 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006217609A JP4347325B2 (ja) 2006-08-10 2006-08-10 単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置

Publications (2)

Publication Number Publication Date
JP2008037724A JP2008037724A (ja) 2008-02-21
JP4347325B2 true JP4347325B2 (ja) 2009-10-21

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ID=39032855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006217609A Expired - Fee Related JP4347325B2 (ja) 2006-08-10 2006-08-10 単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置

Country Status (4)

Country Link
JP (1) JP4347325B2 (ko)
KR (1) KR20090037379A (ko)
TW (1) TW200817543A (ko)
WO (1) WO2008018321A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112048769B (zh) * 2020-07-24 2021-08-31 山东天岳先进科技股份有限公司 一种碳化硅晶体微管愈合用装置及应用

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9603587D0 (sv) * 1996-10-01 1996-10-01 Abb Research Ltd A device for epitaxially growing objects and method for such a growth
JP3505597B2 (ja) * 2000-02-23 2004-03-08 日本ピラー工業株式会社 炭化珪素単結晶

Also Published As

Publication number Publication date
KR20090037379A (ko) 2009-04-15
JP2008037724A (ja) 2008-02-21
TW200817543A (en) 2008-04-16
WO2008018321A1 (fr) 2008-02-14

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