JP4339990B2 - シリコン基板の粗面化法 - Google Patents

シリコン基板の粗面化法 Download PDF

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Publication number
JP4339990B2
JP4339990B2 JP2000263023A JP2000263023A JP4339990B2 JP 4339990 B2 JP4339990 B2 JP 4339990B2 JP 2000263023 A JP2000263023 A JP 2000263023A JP 2000263023 A JP2000263023 A JP 2000263023A JP 4339990 B2 JP4339990 B2 JP 4339990B2
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JP
Japan
Prior art keywords
silicon substrate
etching
roughening
gas
substrate according
Prior art date
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Expired - Fee Related
Application number
JP2000263023A
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English (en)
Japanese (ja)
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JP2002076404A5 (enExample
JP2002076404A (ja
Inventor
洋介 猪股
健次 福井
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Kyocera Corp
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Kyocera Corp
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Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2000263023A priority Critical patent/JP4339990B2/ja
Publication of JP2002076404A publication Critical patent/JP2002076404A/ja
Publication of JP2002076404A5 publication Critical patent/JP2002076404A5/ja
Application granted granted Critical
Publication of JP4339990B2 publication Critical patent/JP4339990B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Drying Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
JP2000263023A 2000-08-31 2000-08-31 シリコン基板の粗面化法 Expired - Fee Related JP4339990B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000263023A JP4339990B2 (ja) 2000-08-31 2000-08-31 シリコン基板の粗面化法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000263023A JP4339990B2 (ja) 2000-08-31 2000-08-31 シリコン基板の粗面化法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2007044511A Division JP4413237B2 (ja) 2007-02-23 2007-02-23 太陽電池の製造方法
JP2007044512A Division JP2007142471A (ja) 2007-02-23 2007-02-23 太陽電池の製造方法

Publications (3)

Publication Number Publication Date
JP2002076404A JP2002076404A (ja) 2002-03-15
JP2002076404A5 JP2002076404A5 (enExample) 2007-04-26
JP4339990B2 true JP4339990B2 (ja) 2009-10-07

Family

ID=18750620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000263023A Expired - Fee Related JP4339990B2 (ja) 2000-08-31 2000-08-31 シリコン基板の粗面化法

Country Status (1)

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JP (1) JP4339990B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7556740B2 (en) 2002-08-27 2009-07-07 Kyocera Corporation Method for producing a solar cell
US7556741B2 (en) 2002-08-28 2009-07-07 Kyocera Corporation Method for producing a solar cell
US7459098B2 (en) * 2002-08-28 2008-12-02 Kyocera Corporation Dry etching apparatus, dry etching method, and plate and tray used therein
JP5064767B2 (ja) * 2005-11-29 2012-10-31 京セラ株式会社 太陽電池素子の製造方法
AU2008348838A1 (en) 2008-01-23 2009-07-30 Solvay Fluor Gmbh Process for the manufacture of solar cells
US7964499B2 (en) * 2008-05-13 2011-06-21 Samsung Electronics Co., Ltd. Methods of forming semiconductor solar cells having front surface electrodes
KR101010286B1 (ko) * 2008-08-29 2011-01-24 엘지전자 주식회사 태양 전지의 제조 방법
KR101624989B1 (ko) * 2010-09-10 2016-05-27 주식회사 원익아이피에스 태양전지기판의 표면처리방법 및 태양전지 제조방법
CN102956742B (zh) * 2011-08-24 2015-04-22 茂迪股份有限公司 太阳能电池的制造方法
JP5901744B2 (ja) * 2012-04-06 2016-04-13 株式会社アルバック ドライエッチング方法
KR20140029563A (ko) 2012-08-28 2014-03-11 엘지전자 주식회사 태양전지의 제조 방법
JP2016532317A (ja) 2013-09-27 2016-10-13 ダンマークス テクニスク ユニバーシテットＤａｎｍａｒｋｓ Ｔｅｋｎｉｓｋｅ Ｕｎｉｖｅｒｓｉｔｅｔ ナノ構造化されたシリコン系太陽電池およびナノ構造化されたシリコン系太陽電池を製造する方法

Also Published As

Publication number Publication date
JP2002076404A (ja) 2002-03-15

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