JP4339005B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4339005B2
JP4339005B2 JP2003101633A JP2003101633A JP4339005B2 JP 4339005 B2 JP4339005 B2 JP 4339005B2 JP 2003101633 A JP2003101633 A JP 2003101633A JP 2003101633 A JP2003101633 A JP 2003101633A JP 4339005 B2 JP4339005 B2 JP 4339005B2
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Japan
Prior art keywords
resist
film
resist pattern
gate electrode
region
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Expired - Fee Related
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JP2003101633A
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English (en)
Japanese (ja)
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JP2004006788A (ja
JP2004006788A5 (https=
Inventor
雅晴 永井
一郎 上原
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003101633A priority Critical patent/JP4339005B2/ja
Publication of JP2004006788A publication Critical patent/JP2004006788A/ja
Publication of JP2004006788A5 publication Critical patent/JP2004006788A5/ja
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Publication of JP4339005B2 publication Critical patent/JP4339005B2/ja
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  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003101633A 2002-04-04 2003-04-04 半導体装置の作製方法 Expired - Fee Related JP4339005B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003101633A JP4339005B2 (ja) 2002-04-04 2003-04-04 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002102178 2002-04-04
JP2003101633A JP4339005B2 (ja) 2002-04-04 2003-04-04 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2004006788A JP2004006788A (ja) 2004-01-08
JP2004006788A5 JP2004006788A5 (https=) 2006-04-20
JP4339005B2 true JP4339005B2 (ja) 2009-10-07

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ID=30446630

Family Applications (1)

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JP2003101633A Expired - Fee Related JP4339005B2 (ja) 2002-04-04 2003-04-04 半導体装置の作製方法

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JP (1) JP4339005B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7875419B2 (en) 2002-10-29 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Method for removing resist pattern and method for manufacturing semiconductor device
JP4611690B2 (ja) * 2004-09-03 2011-01-12 東京応化工業株式会社 レジストパターンの形成方法ならびにこれを用いた微細パターンの形成方法および液晶表示素子の製造方法
JP5137342B2 (ja) * 2005-06-30 2013-02-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7807516B2 (en) 2005-06-30 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2008085231A (ja) * 2006-09-28 2008-04-10 Sharp Manufacturing System Corp 基板上の残留有機物除去方法
KR102080065B1 (ko) * 2013-04-30 2020-04-07 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US10755926B2 (en) * 2017-11-20 2020-08-25 International Business Machines Corporation Patterning directly on an amorphous silicon hardmask
JP2023136042A (ja) * 2022-03-16 2023-09-29 日本放送協会 塗布型金属酸化物前駆体溶液、金属酸化物薄膜、薄膜トランジスタ、及び金属酸化物薄膜の製造方法

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Publication number Publication date
JP2004006788A (ja) 2004-01-08

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