JP4336477B2 - 半導体集積回路装置の製造方法 - Google Patents
半導体集積回路装置の製造方法 Download PDFInfo
- Publication number
- JP4336477B2 JP4336477B2 JP2002102026A JP2002102026A JP4336477B2 JP 4336477 B2 JP4336477 B2 JP 4336477B2 JP 2002102026 A JP2002102026 A JP 2002102026A JP 2002102026 A JP2002102026 A JP 2002102026A JP 4336477 B2 JP4336477 B2 JP 4336477B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- silicon oxide
- oxide film
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000005530 etching Methods 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 28
- 238000012546 transfer Methods 0.000 claims description 23
- 238000004380 ashing Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 56
- 229910052814 silicon oxide Inorganic materials 0.000 description 56
- 239000000758 substrate Substances 0.000 description 47
- 229910052581 Si3N4 Inorganic materials 0.000 description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 42
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 238000001312 dry etching Methods 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002102026A JP4336477B2 (ja) | 2002-04-04 | 2002-04-04 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002102026A JP4336477B2 (ja) | 2002-04-04 | 2002-04-04 | 半導体集積回路装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003297951A JP2003297951A (ja) | 2003-10-17 |
| JP2003297951A5 JP2003297951A5 (enExample) | 2005-09-15 |
| JP4336477B2 true JP4336477B2 (ja) | 2009-09-30 |
Family
ID=29388821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002102026A Expired - Fee Related JP4336477B2 (ja) | 2002-04-04 | 2002-04-04 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4336477B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100576463B1 (ko) * | 2003-12-24 | 2006-05-08 | 주식회사 하이닉스반도체 | 반도체소자의 콘택 형성방법 |
| JP2007149773A (ja) * | 2005-11-24 | 2007-06-14 | Mitsumi Electric Co Ltd | 半導体装置の製造方法 |
| US11973120B2 (en) | 2020-06-24 | 2024-04-30 | Etron Technology, Inc. | Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method |
| US11972983B2 (en) | 2020-06-24 | 2024-04-30 | Etron Technology, Inc. | Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method |
| US11855218B2 (en) | 2020-09-09 | 2023-12-26 | Etron Technology, Inc. | Transistor structure with metal interconnection directly connecting gate and drain/source regions |
| US12490448B2 (en) | 2020-09-09 | 2025-12-02 | Etron Technology, Inc. | Transistor structure with metal interconnection directly connecting gate and drain/source regions |
| JP7568603B2 (ja) * | 2021-12-14 | 2024-10-16 | ▲ゆ▼創科技股▲ふん▼有限公司 | ソース／ドレイン及びコンタクト開口の制御された寸法を有する小型化されたトランジスタ構造及び関連する製造方法 |
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2002
- 2002-04-04 JP JP2002102026A patent/JP4336477B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003297951A (ja) | 2003-10-17 |
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