JP4327266B2 - パターン寸法評価方法及びパターン形成方法 - Google Patents

パターン寸法評価方法及びパターン形成方法 Download PDF

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Publication number
JP4327266B2
JP4327266B2 JP04060398A JP4060398A JP4327266B2 JP 4327266 B2 JP4327266 B2 JP 4327266B2 JP 04060398 A JP04060398 A JP 04060398A JP 4060398 A JP4060398 A JP 4060398A JP 4327266 B2 JP4327266 B2 JP 4327266B2
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Japan
Prior art keywords
pattern
monitor
diffracted light
development
order diffracted
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JP04060398A
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English (en)
Japanese (ja)
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JPH10300428A (ja
JPH10300428A5 (enExample
Inventor
圭 早崎
信一 伊藤
健二 川野
壮一 井上
勝弥 奥村
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Toshiba Corp
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Toshiba Corp
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Priority to JP04060398A priority Critical patent/JP4327266B2/ja
Priority to US09/030,510 priority patent/US6423977B1/en
Publication of JPH10300428A publication Critical patent/JPH10300428A/ja
Publication of JPH10300428A5 publication Critical patent/JPH10300428A5/ja
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Publication of JP4327266B2 publication Critical patent/JP4327266B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP04060398A 1997-02-26 1998-02-23 パターン寸法評価方法及びパターン形成方法 Expired - Fee Related JP4327266B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP04060398A JP4327266B2 (ja) 1997-02-26 1998-02-23 パターン寸法評価方法及びパターン形成方法
US09/030,510 US6423977B1 (en) 1997-02-26 1998-02-25 Pattern size evaluation apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4224597 1997-02-26
JP9-42245 1997-02-26
JP04060398A JP4327266B2 (ja) 1997-02-26 1998-02-23 パターン寸法評価方法及びパターン形成方法

Publications (3)

Publication Number Publication Date
JPH10300428A JPH10300428A (ja) 1998-11-13
JPH10300428A5 JPH10300428A5 (enExample) 2005-08-25
JP4327266B2 true JP4327266B2 (ja) 2009-09-09

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JP04060398A Expired - Fee Related JP4327266B2 (ja) 1997-02-26 1998-02-23 パターン寸法評価方法及びパターン形成方法

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US (1) US6423977B1 (enExample)
JP (1) JP4327266B2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000082661A (ja) 1998-07-02 2000-03-21 Toshiba Corp 加熱装置，加熱装置の評価法及びパタ―ン形成方法
US6737207B2 (en) * 2000-04-25 2004-05-18 Nikon Corporation Method for evaluating lithography system and method for adjusting substrate-processing apparatus
IL140179A (en) * 2000-12-07 2004-09-27 Nova Measuring Instr Ltd Method and system for measuring in patterned structures
WO2002079760A2 (en) * 2001-03-30 2002-10-10 Therma-Wave, Inc. Polarimetric scatterometer for critical dimension measurements of periodic structures
US6529282B1 (en) * 2001-06-11 2003-03-04 Advanced Micro Devices, Inc. Method of controlling photolithography processes based upon scatterometric measurements of photoresist thickness, and system for accomplishing same
US6451621B1 (en) * 2002-01-16 2002-09-17 Advanced Micro Devices, Inc. Using scatterometry to measure resist thickness and control implant
US6847443B1 (en) * 2002-01-17 2005-01-25 Rudolph Technologies, Inc. System and method for multi-wavelength, narrow-bandwidth detection of surface defects
US6882413B2 (en) * 2002-02-04 2005-04-19 Therma-Wave, Inc. Rotating head ellipsometer
TWI238465B (en) 2002-07-24 2005-08-21 Toshiba Corp Method of forming pattern and substrate processing apparatus
US6836691B1 (en) 2003-05-01 2004-12-28 Advanced Micro Devices, Inc. Method and apparatus for filtering metrology data based on collection purpose
US6859746B1 (en) 2003-05-01 2005-02-22 Advanced Micro Devices, Inc. Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same
JP4127664B2 (ja) * 2003-06-30 2008-07-30 株式会社東芝 現像処理装置の調整方法
WO2005069082A1 (en) 2003-12-19 2005-07-28 International Business Machines Corporation Differential critical dimension and overlay metrology apparatus and measurement method
JP4282500B2 (ja) * 2004-01-29 2009-06-24 株式会社東芝 構造検査方法及び半導体装置の製造方法
US8049213B2 (en) * 2007-12-18 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Feature dimension measurement
KR101511158B1 (ko) * 2008-12-16 2015-04-13 삼성전자주식회사 레티클 에러 검출 방법
RU2384838C1 (ru) * 2008-12-23 2010-03-20 Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН СПОСОБ ТЕСТИРОВАНИЯ ЧИПОВ КАСКАДНЫХ ФОТОПРЕОБРАЗОВАТЕЛЕЙ НА ОСНОВЕ СОЕДИНЕНИЙ Al-Ga-In-As-P И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ
JP6339333B2 (ja) * 2013-08-27 2018-06-06 芝浦メカトロニクス株式会社 ドライエッチング装置およびエッチング量測定方法
EP3435161A1 (en) * 2017-07-24 2019-01-30 ASML Netherlands B.V. Determining an edge roughness parameter of a periodic structure
CN107728437A (zh) * 2017-11-17 2018-02-23 深圳市龙图光电有限公司 掩膜板的显影图形精度控制方法及其显影装置
CN112895617B (zh) * 2021-03-25 2025-08-15 江苏博思信息科技有限公司 一种防水型聚氨酯复合膜及其制备方法
CN116682752A (zh) * 2023-01-12 2023-09-01 顺芯科技有限公司 一种具有尺寸识别功能的新型晶圆自动贴膜机

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142107A (en) * 1977-06-30 1979-02-27 International Business Machines Corporation Resist development control system
US4303341A (en) * 1977-12-19 1981-12-01 Rca Corporation Optically testing the lateral dimensions of a pattern
US4408884A (en) * 1981-06-29 1983-10-11 Rca Corporation Optical measurements of fine line parameters in integrated circuit processes
US4815854A (en) * 1987-01-19 1989-03-28 Nec Corporation Method of alignment between mask and semiconductor wafer
US4953982A (en) * 1988-07-20 1990-09-04 Applied Materials, Inc. Method and apparatus for endpoint detection in a semiconductor wafer etching system
US5076692A (en) * 1990-05-31 1991-12-31 Tencor Instruments Particle detection on a patterned or bare wafer surface
US5164790A (en) * 1991-02-27 1992-11-17 Mcneil John R Simple CD measurement of periodic structures on photomasks
US5361137A (en) * 1992-08-31 1994-11-01 Texas Instruments Incorporated Process control for submicron linewidth measurement
US5422723A (en) * 1992-09-21 1995-06-06 Texas Instruments Incorporated Diffraction gratings for submicron linewidth measurement
US5777729A (en) * 1996-05-07 1998-07-07 Nikon Corporation Wafer inspection method and apparatus using diffracted light

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Publication number Publication date
JPH10300428A (ja) 1998-11-13
US6423977B1 (en) 2002-07-23

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