JP4312420B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4312420B2
JP4312420B2 JP2002142027A JP2002142027A JP4312420B2 JP 4312420 B2 JP4312420 B2 JP 4312420B2 JP 2002142027 A JP2002142027 A JP 2002142027A JP 2002142027 A JP2002142027 A JP 2002142027A JP 4312420 B2 JP4312420 B2 JP 4312420B2
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Japan
Prior art keywords
insulating film
film
wiring
drain
forming
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Expired - Fee Related
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JP2002142027A
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English (en)
Japanese (ja)
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JP2003037271A5 (enrdf_load_stackoverflow
JP2003037271A (ja
Inventor
達也 荒尾
好文 棚田
寛 柴田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002142027A priority Critical patent/JP4312420B2/ja
Publication of JP2003037271A publication Critical patent/JP2003037271A/ja
Publication of JP2003037271A5 publication Critical patent/JP2003037271A5/ja
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Publication of JP4312420B2 publication Critical patent/JP4312420B2/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2002142027A 2001-05-18 2002-05-16 半導体装置およびその作製方法 Expired - Fee Related JP4312420B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002142027A JP4312420B2 (ja) 2001-05-18 2002-05-16 半導体装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-149290 2001-05-18
JP2001149290 2001-05-18
JP2002142027A JP4312420B2 (ja) 2001-05-18 2002-05-16 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JP2003037271A JP2003037271A (ja) 2003-02-07
JP2003037271A5 JP2003037271A5 (enrdf_load_stackoverflow) 2005-09-29
JP4312420B2 true JP4312420B2 (ja) 2009-08-12

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JP2002142027A Expired - Fee Related JP4312420B2 (ja) 2001-05-18 2002-05-16 半導体装置およびその作製方法

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JP (1) JP4312420B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4341062B2 (ja) * 2003-02-12 2009-10-07 日本電気株式会社 薄膜トランジスタおよびその製造方法
JP2005223102A (ja) * 2004-02-04 2005-08-18 Nec Corp 不揮発性記憶装置及びその製造方法
KR101267499B1 (ko) * 2005-08-18 2013-05-31 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터
JP2009122256A (ja) * 2007-11-13 2009-06-04 Seiko Epson Corp 電気光学装置及び電子機器
KR101476817B1 (ko) * 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
CN102576732B (zh) * 2009-07-18 2015-02-25 株式会社半导体能源研究所 半导体装置与用于制造半导体装置的方法
JP5919636B2 (ja) 2011-04-01 2016-05-18 セイコーエプソン株式会社 電気光学装置、電子機器、電気光学装置の製造方法
CN108767016B (zh) * 2018-05-21 2021-09-21 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置
KR20240032525A (ko) 2022-09-02 2024-03-12 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 갖는 전계 발광 표시 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1195256A (ja) * 1997-09-25 1999-04-09 Sharp Corp アクティブマトリクス基板
JP3980156B2 (ja) * 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置

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