JP4310233B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
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- JP4310233B2 JP4310233B2 JP2004144690A JP2004144690A JP4310233B2 JP 4310233 B2 JP4310233 B2 JP 4310233B2 JP 2004144690 A JP2004144690 A JP 2004144690A JP 2004144690 A JP2004144690 A JP 2004144690A JP 4310233 B2 JP4310233 B2 JP 4310233B2
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- Prior art keywords
- transistor
- gate
- power supply
- nmis
- pmis
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 29
- 208000011380 COVID-19–associated multisystem inflammatory syndrome in children Diseases 0.000 claims description 102
- 238000010586 diagram Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 7
- 230000003111 delayed effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
以下に、本発明の第1の実施形態について図面を参照しながら説明する。図1は、第1の実施形態において、ゲート電位制御回路を有し、固定のローレベル信号を供給する半導体集積回路装置の構成を示す回路図である。
以下に、本発明の第2の実施形態について図面を参照しながら説明する。図3は、第2の実施形態において、ゲート電位制御回路を有し、固定のハイレベル信号を供給する半導体集積回路装置の構成を示す回路図である。
2 接地ライン
3 NMISトランジスタ
4, 4’ ゲート電位制御回路
5 低出力ライン
6 NMISトランジスタ
7 PMISトランジスタ
8a NMISトランジスタ
8b NMISトランジスタ
9, 9’ ゲート電位制御回路
11 電源ライン
12 接地ライン
13 PMISトランジスタ
14 電源間静電放電保護回路
15 高出力ライン
16 PMISトランジスタ
17 NMISトランジスタ
18a PMISトランジスタ
Claims (4)
- 電源ラインと、
接地ラインと、
上記接地ラインにソースが接続される第1のNMISトランジスタと、
上記第1のNMISトランジスタのドレインに接続され、ローレベル信号を出力する低出力ラインと、
PMISトランジスタと第2のNMISトランジスタとを有するゲート電位制御回路と、
上記電源ラインと上記接地ラインとに接続される電源間静電放電保護回路とを備え、
上記PMISトランジスタでは、ソースが上記電源ラインに接続され、ゲートが上記低出力ラインに接続され、
上記第2のNMISトランジスタでは、ドレインが上記電源ラインに接続され、ソースが上記第1のNMISトランジスタのゲートに接続され、ゲートが、上記PMISトランジスタのドレインからの信号を受ける、半導体集積回路装置。 - 請求項1に記載の半導体集積回路装置であって、
上記ゲート電位制御回路は、上記PMISトランジスタの上記ドレインと上記第2のNMISトランジスタの上記ゲートとの間に設けられた少なくとも1つの第3のNMISトランジスタをさらに有し、
上記第3のNMISトランジスタでは、ドレインが上記電源ラインに接続され、ゲートが上記PMISトランジスタの上記ドレインからの信号を受け、ソースが上記第2のNMISトランジスタの上記ゲートに信号を与える、半導体集積回路装置。 - 電源ラインと、
接地ラインと、
上記電源ラインにソースが接続される第1のPMISトランジスタと、
上記第1のPMISトランジスタのドレインに接続され、ハイレベル信号を出力する高出力ラインと、
NMISトランジスタと第2のPMISトランジスタとを有するゲート電位制御回路と、
上記電源ラインと上記接地ラインとに接続される電源間静電放電保護回路とを備え、
上記NMISトランジスタでは、ソースが上記接地ラインに接続され、ゲートが上記高出力ラインに接続され、
上記第2のPMISトランジスタでは、ドレインが上記接地ラインに接続され、ソースが上記第1のPMISトランジスタのゲートに接続され、ゲートが、上記NMISトランジスタのドレインからの信号を受ける、半導体集積回路装置。 - 請求項3に記載の半導体集積回路装置であって、
上記ゲート電位制御回路は、上記NMISトランジスタの上記ドレインと、上記第2のPMISトランジスタの上記ゲートとの間に設けられた少なくとも1つの第3のPMISトランジスタをさらに有し、
上記第3のPMISトランジスタでは、ドレインが上記接地ラインに接続され、ゲートが上記NMISトランジスタの上記ドレインからの信号を受け、ソースが上記第2のPMISトランジスタの上記ゲートに信号を与える、半導体集積回路装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004144690A JP4310233B2 (ja) | 2004-05-14 | 2004-05-14 | 半導体集積回路装置 |
US11/081,669 US7170729B2 (en) | 2004-05-14 | 2005-03-17 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004144690A JP4310233B2 (ja) | 2004-05-14 | 2004-05-14 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005327904A JP2005327904A (ja) | 2005-11-24 |
JP4310233B2 true JP4310233B2 (ja) | 2009-08-05 |
Family
ID=35309171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004144690A Expired - Fee Related JP4310233B2 (ja) | 2004-05-14 | 2004-05-14 | 半導体集積回路装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7170729B2 (ja) |
JP (1) | JP4310233B2 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4754158A (en) * | 1985-05-28 | 1988-06-28 | Texas Instruments Incorporated | Dual threshold sensitive transistor turn-off circuit |
EP0641077A3 (en) | 1993-08-26 | 1995-11-22 | Hewlett Packard Co | Circuit with fixed logic levels with protection against electrostatic discharges. |
EP0851552A1 (en) * | 1996-12-31 | 1998-07-01 | STMicroelectronics S.r.l. | Protection ciruit for an electric supply line in a semiconductor integrated device |
US5978192A (en) * | 1997-11-05 | 1999-11-02 | Harris Corporation | Schmitt trigger-configured ESD protection circuit |
US6614633B1 (en) * | 1999-03-19 | 2003-09-02 | Denso Corporation | Semiconductor device including a surge protecting circuit |
-
2004
- 2004-05-14 JP JP2004144690A patent/JP4310233B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-17 US US11/081,669 patent/US7170729B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2005327904A (ja) | 2005-11-24 |
US20050254188A1 (en) | 2005-11-17 |
US7170729B2 (en) | 2007-01-30 |
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