JP4294118B2 - 表示装置および表示装置の作製方法 - Google Patents
表示装置および表示装置の作製方法 Download PDFInfo
- Publication number
- JP4294118B2 JP4294118B2 JP16136398A JP16136398A JP4294118B2 JP 4294118 B2 JP4294118 B2 JP 4294118B2 JP 16136398 A JP16136398 A JP 16136398A JP 16136398 A JP16136398 A JP 16136398A JP 4294118 B2 JP4294118 B2 JP 4294118B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- display device
- memory
- tft
- signal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000010408 film Substances 0.000 claims description 126
- 239000004973 liquid crystal related substance Substances 0.000 claims description 71
- 239000010410 layer Substances 0.000 claims description 63
- 238000012937 correction Methods 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 55
- 239000011159 matrix material Substances 0.000 claims description 36
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 22
- 238000007667 floating Methods 0.000 claims description 16
- 239000011229 interlayer Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 2
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 claims 3
- 238000005401 electroluminescence Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 94
- 239000004065 semiconductor Substances 0.000 description 51
- 239000010409 thin film Substances 0.000 description 32
- 238000010586 diagram Methods 0.000 description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 230000007547 defect Effects 0.000 description 21
- 239000012535 impurity Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 15
- 230000002093 peripheral effect Effects 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 8
- 101100280298 Homo sapiens FAM162A gene Proteins 0.000 description 7
- 102100023788 Protein FAM162A Human genes 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000005247 gettering Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 6
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 150000002500 ions Chemical group 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910001362 Ta alloys Inorganic materials 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000010407 anodic oxide Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000002524 electron diffraction data Methods 0.000 description 3
- 230000003446 memory effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910020323 ClF3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910008071 Si-Ni Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006300 Si—Ni Inorganic materials 0.000 description 1
- 229910006285 Si—Ni—Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 201000003373 familial cold autoinflammatory syndrome 3 Diseases 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical group 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16136398A JP4294118B2 (ja) | 1997-08-19 | 1998-05-25 | 表示装置および表示装置の作製方法 |
| US09/132,633 US6667494B1 (en) | 1997-08-19 | 1998-08-11 | Semiconductor device and semiconductor display device |
| TW87113277A TW406281B (en) | 1997-08-19 | 1998-08-12 | Semiconductor device and semiconductor display device |
| KR1019980033200A KR100635085B1 (ko) | 1997-08-19 | 1998-08-17 | 반도체 장치 |
| US09/540,357 US6597014B1 (en) | 1997-08-19 | 2000-03-31 | Semiconductor device and semiconductor display device |
| US09/540,639 US6717179B1 (en) | 1997-08-19 | 2000-03-31 | Semiconductor device and semiconductor display device |
| US09/539,828 US6670635B1 (en) | 1997-08-19 | 2000-03-31 | Semiconductor device and semiconductor display device |
| US10/700,198 US7126156B2 (en) | 1997-08-19 | 2003-11-03 | Thin film transistor display device with integral control circuitry |
| KR1020050091094A KR100619673B1 (ko) | 1997-08-19 | 2005-09-29 | 반도체장치 |
| KR1020060039894A KR100680741B1 (ko) | 1997-08-19 | 2006-05-03 | 반도체장치 |
| US11/583,599 US7750347B2 (en) | 1997-08-19 | 2006-10-19 | Semiconductor device and semiconductor display device |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23892797 | 1997-08-19 | ||
| JP9-238927 | 1997-08-19 | ||
| JP13274898 | 1998-04-27 | ||
| JP10-132748 | 1998-04-27 | ||
| JP16136398A JP4294118B2 (ja) | 1997-08-19 | 1998-05-25 | 表示装置および表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000022094A JP2000022094A (ja) | 2000-01-21 |
| JP2000022094A5 JP2000022094A5 (enExample) | 2005-09-29 |
| JP4294118B2 true JP4294118B2 (ja) | 2009-07-08 |
Family
ID=27316573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16136398A Expired - Fee Related JP4294118B2 (ja) | 1997-08-19 | 1998-05-25 | 表示装置および表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4294118B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001326289A (ja) * | 2000-03-08 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 不揮発性メモリおよび半導体装置 |
| US7088322B2 (en) | 2000-05-12 | 2006-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4845284B2 (ja) * | 2000-05-12 | 2011-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| DE10141962A1 (de) * | 2001-08-28 | 2003-03-20 | Koninkl Philips Electronics Nv | Nicht-flüchtiger Halbleiterspeicher |
| US7666722B2 (en) * | 2004-02-20 | 2010-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device, and IC card, IC tag, RFID, transponder, bill, securities, passport, electronic apparatus, bag, and garment |
| WO2007138754A1 (ja) * | 2006-05-31 | 2007-12-06 | Sharp Kabushiki Kaisha | 半導体装置、その製造方法、及び、表示装置 |
| JP4592739B2 (ja) | 2007-11-15 | 2010-12-08 | シャープ株式会社 | 表示装置、携帯機器 |
| JP5328214B2 (ja) * | 2008-04-17 | 2013-10-30 | シャープ株式会社 | 半導体装置、tft基板、表示装置、携帯機器 |
| JP2010021482A (ja) * | 2008-07-14 | 2010-01-28 | Sharp Corp | 半導体装置、tft基板、表示装置、携帯機器 |
-
1998
- 1998-05-25 JP JP16136398A patent/JP4294118B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000022094A (ja) | 2000-01-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3980178B2 (ja) | 不揮発性メモリおよび半導体装置 | |
| US7750347B2 (en) | Semiconductor device and semiconductor display device | |
| KR100561320B1 (ko) | 반도체 디스플레이장치 보정시스템 및 반도체 디스플레이장치의 보정방법 | |
| US20120140136A1 (en) | Driving circuit of a semiconductor display device and the semiconductor display device | |
| JP2001051292A (ja) | 半導体装置および半導体表示装置 | |
| JP2000174282A (ja) | 半導体装置 | |
| US6717179B1 (en) | Semiconductor device and semiconductor display device | |
| JP4090569B2 (ja) | 半導体装置、液晶表示装置及びel表示装置 | |
| JP4294118B2 (ja) | 表示装置および表示装置の作製方法 | |
| JP2001053287A (ja) | 半導体装置およびその作製方法 | |
| JP4112686B2 (ja) | 半導体装置 | |
| JP5041839B2 (ja) | 半導体装置 | |
| JP2006237624A (ja) | 半導体装置及びインバータ回路 | |
| JP5504239B2 (ja) | 半導体装置の作製方法 | |
| TW406281B (en) | Semiconductor device and semiconductor display device | |
| JP2006203241A (ja) | 半導体装置 | |
| JP2000323662A (ja) | コンデンサー及び半導体装置並びにそれらの作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050512 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050512 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071121 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071127 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071227 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090407 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090408 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120417 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120417 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120417 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130417 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130417 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140417 Year of fee payment: 5 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |