JP4290038B2 - 半導体装置及びトランジスタ並びに半導体装置の製造方法 - Google Patents

半導体装置及びトランジスタ並びに半導体装置の製造方法 Download PDF

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Publication number
JP4290038B2
JP4290038B2 JP2004059449A JP2004059449A JP4290038B2 JP 4290038 B2 JP4290038 B2 JP 4290038B2 JP 2004059449 A JP2004059449 A JP 2004059449A JP 2004059449 A JP2004059449 A JP 2004059449A JP 4290038 B2 JP4290038 B2 JP 4290038B2
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porous layer
semiconductor
forming
semiconductor region
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JP2004059449A
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Japanese (ja)
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JP2005251939A5 (https=
JP2005251939A (ja
Inventor
清文 坂口
信彦 佐藤
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004059449A priority Critical patent/JP4290038B2/ja
Priority to TW093115344A priority patent/TWI242232B/zh
Priority to US10/857,881 priority patent/US7164183B2/en
Priority to EP04013491A priority patent/EP1487007A2/en
Priority to KR1020040042219A priority patent/KR20040105627A/ko
Publication of JP2005251939A publication Critical patent/JP2005251939A/ja
Publication of JP2005251939A5 publication Critical patent/JP2005251939A5/ja
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Publication of JP4290038B2 publication Critical patent/JP4290038B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2004059449A 2003-06-09 2004-03-03 半導体装置及びトランジスタ並びに半導体装置の製造方法 Expired - Fee Related JP4290038B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004059449A JP4290038B2 (ja) 2004-03-03 2004-03-03 半導体装置及びトランジスタ並びに半導体装置の製造方法
TW093115344A TWI242232B (en) 2003-06-09 2004-05-28 Semiconductor substrate, semiconductor device, and method of manufacturing the same
US10/857,881 US7164183B2 (en) 2003-06-09 2004-06-02 Semiconductor substrate, semiconductor device, and method of manufacturing the same
EP04013491A EP1487007A2 (en) 2003-06-09 2004-06-08 Semiconductor substrate, semiconductor device, and method of manufacturing the same
KR1020040042219A KR20040105627A (ko) 2003-06-09 2004-06-09 반도체기판, 반도체디바이스 및 이들의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004059449A JP4290038B2 (ja) 2004-03-03 2004-03-03 半導体装置及びトランジスタ並びに半導体装置の製造方法

Publications (3)

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JP2005251939A JP2005251939A (ja) 2005-09-15
JP2005251939A5 JP2005251939A5 (https=) 2007-01-18
JP4290038B2 true JP4290038B2 (ja) 2009-07-01

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JP2004059449A Expired - Fee Related JP4290038B2 (ja) 2003-06-09 2004-03-03 半導体装置及びトランジスタ並びに半導体装置の製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7911058B2 (en) 2005-11-30 2011-03-22 Elpida Memory Inc. Semiconductor chip having island dispersion structure and method for manufacturing the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201370A (ja) * 2006-01-30 2007-08-09 Nec Electronics Corp 半導体装置およびその製造方法
JP5193583B2 (ja) * 2007-12-17 2013-05-08 株式会社東芝 フィン型トランジスタ
WO2024166562A1 (ja) * 2023-02-10 2024-08-15 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7911058B2 (en) 2005-11-30 2011-03-22 Elpida Memory Inc. Semiconductor chip having island dispersion structure and method for manufacturing the same
US8088673B2 (en) 2005-11-30 2012-01-03 Elpida Memory Inc. Semiconductor chip having island dispersion structure and method for manufacturing the same

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Publication number Publication date
JP2005251939A (ja) 2005-09-15

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