JP2005251939A5 - - Google Patents
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- Publication number
- JP2005251939A5 JP2005251939A5 JP2004059449A JP2004059449A JP2005251939A5 JP 2005251939 A5 JP2005251939 A5 JP 2005251939A5 JP 2004059449 A JP2004059449 A JP 2004059449A JP 2004059449 A JP2004059449 A JP 2004059449A JP 2005251939 A5 JP2005251939 A5 JP 2005251939A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- region
- porous layer
- semiconductor device
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 32
- 230000001939 inductive effect Effects 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 3
- 230000006698 induction Effects 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910021426 porous silicon Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004059449A JP4290038B2 (ja) | 2004-03-03 | 2004-03-03 | 半導体装置及びトランジスタ並びに半導体装置の製造方法 |
| TW093115344A TWI242232B (en) | 2003-06-09 | 2004-05-28 | Semiconductor substrate, semiconductor device, and method of manufacturing the same |
| US10/857,881 US7164183B2 (en) | 2003-06-09 | 2004-06-02 | Semiconductor substrate, semiconductor device, and method of manufacturing the same |
| EP04013491A EP1487007A2 (en) | 2003-06-09 | 2004-06-08 | Semiconductor substrate, semiconductor device, and method of manufacturing the same |
| KR1020040042219A KR20040105627A (ko) | 2003-06-09 | 2004-06-09 | 반도체기판, 반도체디바이스 및 이들의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004059449A JP4290038B2 (ja) | 2004-03-03 | 2004-03-03 | 半導体装置及びトランジスタ並びに半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005251939A JP2005251939A (ja) | 2005-09-15 |
| JP2005251939A5 true JP2005251939A5 (https=) | 2007-01-18 |
| JP4290038B2 JP4290038B2 (ja) | 2009-07-01 |
Family
ID=35032143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004059449A Expired - Fee Related JP4290038B2 (ja) | 2003-06-09 | 2004-03-03 | 半導体装置及びトランジスタ並びに半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4290038B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4677331B2 (ja) | 2005-11-30 | 2011-04-27 | エルピーダメモリ株式会社 | 島状の分散構造を備えた半導体チップおよびその製造方法 |
| JP2007201370A (ja) * | 2006-01-30 | 2007-08-09 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP5193583B2 (ja) * | 2007-12-17 | 2013-05-08 | 株式会社東芝 | フィン型トランジスタ |
| WO2024166562A1 (ja) * | 2023-02-10 | 2024-08-15 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
-
2004
- 2004-03-03 JP JP2004059449A patent/JP4290038B2/ja not_active Expired - Fee Related
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