JP4272805B2 - ポジ型感放射線性組成物 - Google Patents

ポジ型感放射線性組成物 Download PDF

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Publication number
JP4272805B2
JP4272805B2 JP2000318057A JP2000318057A JP4272805B2 JP 4272805 B2 JP4272805 B2 JP 4272805B2 JP 2000318057 A JP2000318057 A JP 2000318057A JP 2000318057 A JP2000318057 A JP 2000318057A JP 4272805 B2 JP4272805 B2 JP 4272805B2
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Japan
Prior art keywords
group
acid
compound
radiation
resin
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JP2000318057A
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Japanese (ja)
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JP2001249460A5 (enExample
JP2001249460A (ja
Inventor
慎一 漢那
邦彦 児玉
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2000318057A priority Critical patent/JP4272805B2/ja
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Publication of JP2001249460A5 publication Critical patent/JP2001249460A5/ja
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Publication of JP4272805B2 publication Critical patent/JP4272805B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2000318057A 1999-12-27 2000-10-18 ポジ型感放射線性組成物 Expired - Lifetime JP4272805B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000318057A JP4272805B2 (ja) 1999-12-27 2000-10-18 ポジ型感放射線性組成物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-370355 1999-12-27
JP37035599 1999-12-27
JP2000318057A JP4272805B2 (ja) 1999-12-27 2000-10-18 ポジ型感放射線性組成物

Publications (3)

Publication Number Publication Date
JP2001249460A JP2001249460A (ja) 2001-09-14
JP2001249460A5 JP2001249460A5 (enExample) 2006-01-12
JP4272805B2 true JP4272805B2 (ja) 2009-06-03

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ID=26582222

Family Applications (1)

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JP2000318057A Expired - Lifetime JP4272805B2 (ja) 1999-12-27 2000-10-18 ポジ型感放射線性組成物

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JP (1) JP4272805B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7214465B2 (en) 2002-01-10 2007-05-08 Fujifilm Corporation Positive photosensitive composition
JP7519205B2 (ja) * 2019-04-24 2024-07-19 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
WO2024070964A1 (ja) 2022-09-30 2024-04-04 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法及び電子デバイスの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3238465B2 (ja) * 1991-04-30 2001-12-17 株式会社東芝 パターン形成用レジストおよびパターン形成方法
JP3549592B2 (ja) * 1994-11-02 2004-08-04 クラリアント インターナショナル リミテッド 放射線感応性組成物
JP3942263B2 (ja) * 1997-03-05 2007-07-11 信越化学工業株式会社 高分子化合物、化学増幅ポジ型レジスト材料及びパターン形成方法
JP3991462B2 (ja) * 1997-08-18 2007-10-17 Ｊｓｒ株式会社 感放射線性樹脂組成物
JPH11167199A (ja) * 1997-12-03 1999-06-22 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP3955385B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 パターン形成方法
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
US6200728B1 (en) * 1999-02-20 2001-03-13 Shipley Company, L.L.C. Photoresist compositions comprising blends of photoacid generators
JP4023086B2 (ja) * 1999-12-27 2007-12-19 和光純薬工業株式会社 スルホニウム塩化合物

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Publication number Publication date
JP2001249460A (ja) 2001-09-14

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