JP4265865B2 - 能動負荷回路 - Google Patents

能動負荷回路 Download PDF

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Publication number
JP4265865B2
JP4265865B2 JP2000279474A JP2000279474A JP4265865B2 JP 4265865 B2 JP4265865 B2 JP 4265865B2 JP 2000279474 A JP2000279474 A JP 2000279474A JP 2000279474 A JP2000279474 A JP 2000279474A JP 4265865 B2 JP4265865 B2 JP 4265865B2
Authority
JP
Japan
Prior art keywords
current
input
output
circuit
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000279474A
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English (en)
Japanese (ja)
Other versions
JP2002094341A5 (enExample
JP2002094341A (ja
Inventor
克之 安河内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to JP2000279474A priority Critical patent/JP4265865B2/ja
Priority to US09/796,549 priority patent/US6480069B2/en
Publication of JP2002094341A publication Critical patent/JP2002094341A/ja
Publication of JP2002094341A5 publication Critical patent/JP2002094341A5/ja
Application granted granted Critical
Publication of JP4265865B2 publication Critical patent/JP4265865B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3023—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45644—Indexing scheme relating to differential amplifiers the LC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP2000279474A 2000-09-14 2000-09-14 能動負荷回路 Expired - Fee Related JP4265865B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000279474A JP4265865B2 (ja) 2000-09-14 2000-09-14 能動負荷回路
US09/796,549 US6480069B2 (en) 2000-09-14 2001-03-02 Active load circuit, and operational amplifier and comparator having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000279474A JP4265865B2 (ja) 2000-09-14 2000-09-14 能動負荷回路

Publications (3)

Publication Number Publication Date
JP2002094341A JP2002094341A (ja) 2002-03-29
JP2002094341A5 JP2002094341A5 (enExample) 2006-10-12
JP4265865B2 true JP4265865B2 (ja) 2009-05-20

Family

ID=18764473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000279474A Expired - Fee Related JP4265865B2 (ja) 2000-09-14 2000-09-14 能動負荷回路

Country Status (2)

Country Link
US (1) US6480069B2 (enExample)
JP (1) JP4265865B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11264955B2 (en) 2019-08-08 2022-03-01 Kabushiki Kaisha Toshiba Semiconductor amplifier circuit and semiconductor circuit

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7565108B2 (en) * 2002-03-26 2009-07-21 Nokia Corporation Radio frequency identification (RF-ID) based discovery for short range radio communication with reader device having transponder functionality
ATE470268T1 (de) * 2004-03-29 2010-06-15 Nxp Bv Schnelle phasenfrequenz-detektoranordnung
EP1693963A3 (en) * 2005-02-10 2010-01-13 NEC Electronics Corporation Interface circuit
US7400250B2 (en) * 2005-04-29 2008-07-15 Nokia Corporation Indicating radio frequency identification (RF-ID) tag
US20070075775A1 (en) * 2005-09-30 2007-04-05 Xiaoyu Xi Amplifier
US8340614B2 (en) * 2008-12-18 2012-12-25 Plantronics, Inc. Antenna diversity to improve proximity detection using RSSI
US8390491B2 (en) * 2011-01-14 2013-03-05 Analog Devices, Inc. Buffer to drive reference voltage
US11454999B2 (en) 2012-08-29 2022-09-27 Stem, Inc. Method and apparatus for automatically reconfiguring multi-phased networked energy storage devices at a site
JP5856557B2 (ja) * 2012-11-13 2016-02-10 旭化成エレクトロニクス株式会社 センサ閾値決定回路
TWI652904B (zh) 2018-01-10 2019-03-01 威盛電子股份有限公司 高速內遲滯型比較器
US20230051462A1 (en) * 2021-08-13 2023-02-16 Texas Instruments Incorporated Differential amplifier common mode voltage
US12278636B2 (en) * 2022-11-28 2025-04-15 Parade Technologies, Ltd. Receiver circuit with automatic DC offset cancellation in display port applications

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0773205B2 (ja) * 1983-12-20 1995-08-02 株式会社日立製作所 レベル変換回路
US4887047A (en) * 1988-09-30 1989-12-12 Burr-Brown Corporation Current sense amplifier with low, nonlinear input impedance and high degree of signal amplification linearity
US5331290A (en) * 1992-09-08 1994-07-19 Samsung Electronics Co., Ltd. Variable gain amplifier
JPH06177718A (ja) 1992-11-30 1994-06-24 Sony Corp エミツタ結合論理回路
US5422529A (en) * 1993-12-10 1995-06-06 Rambus, Inc. Differential charge pump circuit with high differential and low common mode impedance
US5854574A (en) * 1996-04-26 1998-12-29 Analog Devices, Inc. Reference buffer with multiple gain stages for large, controlled effective transconductance
JP3382128B2 (ja) * 1997-07-10 2003-03-04 東芝マイクロエレクトロニクス株式会社 差動増幅器
JP3841195B2 (ja) * 1998-12-02 2006-11-01 富士通株式会社 差動増幅器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11264955B2 (en) 2019-08-08 2022-03-01 Kabushiki Kaisha Toshiba Semiconductor amplifier circuit and semiconductor circuit

Also Published As

Publication number Publication date
US6480069B2 (en) 2002-11-12
JP2002094341A (ja) 2002-03-29
US20020030542A1 (en) 2002-03-14

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