JP4256300B2 - 基板検査方法および基板検査装置 - Google Patents

基板検査方法および基板検査装置 Download PDF

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Publication number
JP4256300B2
JP4256300B2 JP2004159089A JP2004159089A JP4256300B2 JP 4256300 B2 JP4256300 B2 JP 4256300B2 JP 2004159089 A JP2004159089 A JP 2004159089A JP 2004159089 A JP2004159089 A JP 2004159089A JP 4256300 B2 JP4256300 B2 JP 4256300B2
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Japan
Prior art keywords
electron beam
secondary electron
primary
primary electron
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004159089A
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English (en)
Japanese (ja)
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JP2005337959A5 (enExample
JP2005337959A (ja
Inventor
濱 一郎太 長
崎 裕一郎 山
西 篤 志 大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
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Priority to JP2004159089A priority Critical patent/JP4256300B2/ja
Priority to US11/137,473 priority patent/US7645988B2/en
Publication of JP2005337959A publication Critical patent/JP2005337959A/ja
Publication of JP2005337959A5 publication Critical patent/JP2005337959A5/ja
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Publication of JP4256300B2 publication Critical patent/JP4256300B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1538—Space charge (Boersch) effect compensation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2004159089A 2004-05-28 2004-05-28 基板検査方法および基板検査装置 Expired - Fee Related JP4256300B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004159089A JP4256300B2 (ja) 2004-05-28 2004-05-28 基板検査方法および基板検査装置
US11/137,473 US7645988B2 (en) 2004-05-28 2005-05-26 Substrate inspection method, method of manufacturing semiconductor device, and substrate inspection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004159089A JP4256300B2 (ja) 2004-05-28 2004-05-28 基板検査方法および基板検査装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008277011A Division JP4792074B2 (ja) 2008-10-28 2008-10-28 基板検査方法および基板検査装置

Publications (3)

Publication Number Publication Date
JP2005337959A JP2005337959A (ja) 2005-12-08
JP2005337959A5 JP2005337959A5 (enExample) 2006-11-24
JP4256300B2 true JP4256300B2 (ja) 2009-04-22

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ID=35424161

Family Applications (1)

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JP2004159089A Expired - Fee Related JP4256300B2 (ja) 2004-05-28 2004-05-28 基板検査方法および基板検査装置

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Country Link
US (1) US7645988B2 (enExample)
JP (1) JP4256300B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4578875B2 (ja) * 2004-07-16 2010-11-10 株式会社荏原製作所 写像型電子顕微鏡
JP4498185B2 (ja) * 2005-03-23 2010-07-07 株式会社東芝 基板検査方法、半導体装置の製造方法および基板検査装置
WO2007086400A1 (ja) * 2006-01-25 2007-08-02 Ebara Corporation 試料表面検査方法及び検査装置
EP2333808A1 (en) * 2009-12-11 2011-06-15 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, method of operating a charged particle beam device
WO2016125864A1 (ja) * 2015-02-05 2016-08-11 株式会社荏原製作所 検査装置
JP7017437B2 (ja) * 2018-03-06 2022-02-08 Ｔａｓｍｉｔ株式会社 反射電子のエネルギースペクトルを測定する装置および方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2810797B2 (ja) 1991-01-11 1998-10-15 日本電子株式会社 反射電子顕微鏡
JP3409909B2 (ja) 1994-03-11 2003-05-26 株式会社東芝 ウェーハパターンの欠陥検出方法及び同装置
JPH11132975A (ja) 1997-10-31 1999-05-21 Toshiba Corp 電子ビームを用いた検査方法及びその装置
JPH11345585A (ja) 1998-06-03 1999-12-14 Nikon Corp 電子ビームによる検査装置および検査方法
EP1271605A4 (en) * 2000-11-02 2009-09-02 Ebara Corp ELECTRON BEAM APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING SAID APPARATUS

Also Published As

Publication number Publication date
US7645988B2 (en) 2010-01-12
US20050263701A1 (en) 2005-12-01
JP2005337959A (ja) 2005-12-08

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