JP4253430B2 - ポジ型フォトレジスト組成物及びパターン形成方法 - Google Patents

ポジ型フォトレジスト組成物及びパターン形成方法 Download PDF

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Publication number
JP4253430B2
JP4253430B2 JP2000310728A JP2000310728A JP4253430B2 JP 4253430 B2 JP4253430 B2 JP 4253430B2 JP 2000310728 A JP2000310728 A JP 2000310728A JP 2000310728 A JP2000310728 A JP 2000310728A JP 4253430 B2 JP4253430 B2 JP 4253430B2
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group
carbon atoms
substituent
acid
groups
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Japanese (ja)
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JP2001194793A5 (enExample
JP2001194793A (ja
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亨 藤森
史郎 丹
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Fujifilm Corp
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Fujifilm Corp
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2000310728A 1999-10-28 2000-10-11 ポジ型フォトレジスト組成物及びパターン形成方法 Expired - Fee Related JP4253430B2 (ja)

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JP2000310728A JP4253430B2 (ja) 1999-10-28 2000-10-11 ポジ型フォトレジスト組成物及びパターン形成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP30731899 1999-10-28
JP11-307318 1999-10-28
JP2000310728A JP4253430B2 (ja) 1999-10-28 2000-10-11 ポジ型フォトレジスト組成物及びパターン形成方法

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JP2001194793A JP2001194793A (ja) 2001-07-19
JP2001194793A5 JP2001194793A5 (enExample) 2006-01-12
JP4253430B2 true JP4253430B2 (ja) 2009-04-15

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JP2000310728A Expired - Fee Related JP4253430B2 (ja) 1999-10-28 2000-10-11 ポジ型フォトレジスト組成物及びパターン形成方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100830868B1 (ko) 2006-08-10 2008-05-21 주식회사 동진쎄미켐 극자외선 및 심자외선용 감광성 고분자 및 이를 포함하는포토레지스트 조성물
JP5844613B2 (ja) * 2010-11-17 2016-01-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 感光性コポリマーおよびフォトレジスト組成物

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