JP4246732B2 - リソグラフィ装置、デバイス製造方法、及びそれによって製造されたデバイス - Google Patents
リソグラフィ装置、デバイス製造方法、及びそれによって製造されたデバイス Download PDFInfo
- Publication number
- JP4246732B2 JP4246732B2 JP2005347566A JP2005347566A JP4246732B2 JP 4246732 B2 JP4246732 B2 JP 4246732B2 JP 2005347566 A JP2005347566 A JP 2005347566A JP 2005347566 A JP2005347566 A JP 2005347566A JP 4246732 B2 JP4246732 B2 JP 4246732B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate table
- support
- scanning
- substrate
- path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 178
- 230000005855 radiation Effects 0.000 claims description 79
- 238000000059 patterning Methods 0.000 claims description 49
- 238000005286 illumination Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- 230000001788 irregular Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 description 16
- 230000000873 masking effect Effects 0.000 description 13
- 230000007547 defect Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/001,083 US7230675B2 (en) | 2004-12-02 | 2004-12-02 | Lithographic apparatus, device manufacturing method and device manufactured therewith |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006165549A JP2006165549A (ja) | 2006-06-22 |
| JP2006165549A5 JP2006165549A5 (enExample) | 2007-08-23 |
| JP4246732B2 true JP4246732B2 (ja) | 2009-04-02 |
Family
ID=36573770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005347566A Expired - Fee Related JP4246732B2 (ja) | 2004-12-02 | 2005-12-01 | リソグラフィ装置、デバイス製造方法、及びそれによって製造されたデバイス |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7230675B2 (enExample) |
| JP (1) | JP4246732B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007004552A1 (ja) * | 2005-06-30 | 2007-01-11 | Nikon Corporation | 露光装置及び方法、露光装置のメンテナンス方法、並びにデバイス製造方法 |
| US9529275B2 (en) * | 2007-02-21 | 2016-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography scanner throughput |
| US20090027648A1 (en) * | 2007-07-25 | 2009-01-29 | Asml Netherlands B.V. | Method of reducing noise in an original signal, and signal processing device therefor |
| JP5797454B2 (ja) * | 2011-05-20 | 2015-10-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG110121A1 (en) * | 2003-09-10 | 2005-04-28 | Asml Netherlands Bv | Method for exposing a substrate and lithographic projection apparatus |
-
2004
- 2004-12-02 US US11/001,083 patent/US7230675B2/en not_active Expired - Lifetime
-
2005
- 2005-12-01 JP JP2005347566A patent/JP4246732B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7230675B2 (en) | 2007-06-12 |
| US20060119812A1 (en) | 2006-06-08 |
| JP2006165549A (ja) | 2006-06-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4482593B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
| JP4248490B2 (ja) | リソグラフィック装置、位置合せ装置、デバイス製造方法、位置合せ方法及び装置を変換する方法 | |
| JP5108157B2 (ja) | リソグラフィ投影装置 | |
| JP5689461B2 (ja) | リソグラフィ装置、極端紫外線の反射を制御する方法、及びマスキングデバイス | |
| JP2011097056A (ja) | リソグラフィ方法および装置 | |
| JP4384149B2 (ja) | ビーム修正装置 | |
| JP2012160729A (ja) | 照明系、リソグラフィ装置および方法 | |
| JP4777296B2 (ja) | リソグラフィ装置 | |
| JP5689443B2 (ja) | 波面変更装置、リソグラフィ装置およびデバイス製造方法 | |
| KR100670397B1 (ko) | 리소그래피장치 및 디바이스 제조방법 | |
| JP5341930B2 (ja) | リソグラフィ装置及びスキャン方法 | |
| JP2006165552A (ja) | リソグラフィ装置およびデバイス製造方法 | |
| JP4991139B2 (ja) | 光学システム、リソグラフィ装置、光学システムのアポディゼーションを修正する方法、及びデバイス製造方法 | |
| JP4246732B2 (ja) | リソグラフィ装置、デバイス製造方法、及びそれによって製造されたデバイス | |
| KR100657646B1 (ko) | 리소그래피 장치 | |
| JP5006889B2 (ja) | 粗ウェーハ位置合わせ用マーク構造及びこのようなマーク構造の製造方法 | |
| US7315351B2 (en) | Lithographic apparatus, device manufacturing method and device manufactured therewith | |
| JP4376227B2 (ja) | リソグラフィ装置用投影装置 | |
| JP2007318120A (ja) | リソグラフィ装置およびデバイス製造方法 | |
| JP4994659B2 (ja) | リソグラフィ装置及びデバイス製造方法 | |
| JP5465963B2 (ja) | 基板測定装置、リソグラフィ装置、基板測定方法およびデバイス製造方法 | |
| JP2007158313A (ja) | 光学システム、リソグラフィ装置および投影方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20060904 |
|
| RD05 | Notification of revocation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7425 Effective date: 20070529 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070709 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20070710 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20070723 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070806 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071102 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080109 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080403 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080715 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081015 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20081216 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090108 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4246732 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120116 Year of fee payment: 3 |
|
| S802 | Written request for registration of partial abandonment of right |
Free format text: JAPANESE INTERMEDIATE CODE: R311802 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120116 Year of fee payment: 3 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130116 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |