JP4246153B2 - 電子装置を形成する方法 - Google Patents

電子装置を形成する方法 Download PDF

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Publication number
JP4246153B2
JP4246153B2 JP2004535396A JP2004535396A JP4246153B2 JP 4246153 B2 JP4246153 B2 JP 4246153B2 JP 2004535396 A JP2004535396 A JP 2004535396A JP 2004535396 A JP2004535396 A JP 2004535396A JP 4246153 B2 JP4246153 B2 JP 4246153B2
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Prior art keywords
material layer
substrate
tft
depositing
electronic device
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Expired - Fee Related
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JP2004535396A
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Japanese (ja)
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JP2005539378A5 (enExample
JP2005539378A (ja
Inventor
ブロディ，トーマス，ピー
マームバーグ，ポール，アール
ステイプルトン，ロバート，イー
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アドヴァンテック・グローバル・リミテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2004535396A 2002-06-05 2003-05-19 電子装置を形成する方法 Expired - Fee Related JP4246153B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38652502P 2002-06-05 2002-06-05
US10/255,972 US6943066B2 (en) 2002-06-05 2002-09-26 Active matrix backplane for controlling controlled elements and method of manufacture thereof
PCT/US2003/015682 WO2004025696A2 (en) 2002-06-05 2003-05-19 Active matrix backplane for controlling controlled elements and method of manufacture thereof

Publications (3)

Publication Number Publication Date
JP2005539378A JP2005539378A (ja) 2005-12-22
JP2005539378A5 JP2005539378A5 (enExample) 2007-05-17
JP4246153B2 true JP4246153B2 (ja) 2009-04-02

Family

ID=29714899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004535396A Expired - Fee Related JP4246153B2 (ja) 2002-06-05 2003-05-19 電子装置を形成する方法

Country Status (6)

Country Link
US (1) US6943066B2 (enExample)
EP (1) EP1568069A4 (enExample)
JP (1) JP4246153B2 (enExample)
CN (1) CN100375229C (enExample)
AU (1) AU2003288893A1 (enExample)
WO (1) WO2004025696A2 (enExample)

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US6642092B1 (en) * 2002-07-11 2003-11-04 Sharp Laboratories Of America, Inc. Thin-film transistors formed on a metal foil substrate
EP1559299A1 (en) * 2002-10-07 2005-08-03 Koninklijke Philips Electronics N.V. Method for manufacturing a light emitting display
US7214554B2 (en) * 2004-03-18 2007-05-08 Eastman Kodak Company Monitoring the deposition properties of an OLED
JP4393402B2 (ja) * 2004-04-22 2010-01-06 キヤノン株式会社 有機電子素子の製造方法および製造装置
DE102004024461A1 (de) * 2004-05-14 2005-12-01 Konarka Technologies, Inc., Lowell Vorrichtung und Verfahren zur Herstellung eines elektronischen Bauelements mit zumindest einer aktiven organischen Schicht
KR100671640B1 (ko) * 2004-06-24 2007-01-18 삼성에스디아이 주식회사 박막 트랜지스터 어레이 기판과 이를 이용한 표시장치와그의 제조방법
US20060021869A1 (en) * 2004-07-28 2006-02-02 Advantech Global, Ltd System for and method of ensuring accurate shadow mask-to-substrate registration in a deposition process
US7232694B2 (en) * 2004-09-28 2007-06-19 Advantech Global, Ltd. System and method for active array temperature sensing and cooling
KR100696479B1 (ko) * 2004-11-18 2007-03-19 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
US7132361B2 (en) * 2004-12-23 2006-11-07 Advantech Global, Ltd System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process
US7271111B2 (en) * 2005-06-08 2007-09-18 Advantech Global, Ltd Shadow mask deposition of materials using reconfigurable shadow masks
US7531470B2 (en) * 2005-09-27 2009-05-12 Advantech Global, Ltd Method and apparatus for electronic device manufacture using shadow masks
US20070137568A1 (en) * 2005-12-16 2007-06-21 Schreiber Brian E Reciprocating aperture mask system and method
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
EP2987450B1 (en) * 2006-02-07 2019-06-05 Boston Scientific Limited Medical device light source
US20090098309A1 (en) * 2007-10-15 2009-04-16 Advantech Global, Ltd In-Situ Etching Of Shadow Masks Of A Continuous In-Line Shadow Mask Vapor Deposition System
US20090311427A1 (en) * 2008-06-13 2009-12-17 Advantech Global, Ltd Mask Dimensional Adjustment and Positioning System and Method
WO2011019429A2 (en) * 2009-06-09 2011-02-17 Arizona Technology Enterprises Method of anodizing aluminum using a hard mask and semiconductor device thereof
JP5528727B2 (ja) * 2009-06-19 2014-06-25 富士フイルム株式会社 薄膜トランジスタ製造装置、酸化物半導体薄膜の製造方法、薄膜トランジスタの製造方法、酸化物半導体薄膜、薄膜トランジスタ及び発光デバイス
US8658478B2 (en) 2010-09-23 2014-02-25 Advantech Global, Ltd Transistor structure for improved static control during formation of the transistor
CN104862669B (zh) * 2010-12-16 2018-05-22 潘重光 任意尺寸底板及显示屏的气相沉积荫罩板系统及其方法
CN102122612A (zh) * 2010-12-16 2011-07-13 潘重光 一种采用荫罩技术生产线制造器件的方法及系统
US10233528B2 (en) * 2015-06-08 2019-03-19 Applied Materials, Inc. Mask for deposition system and method for using the mask
KR102696806B1 (ko) * 2016-09-22 2024-08-21 삼성디스플레이 주식회사 증착용 마스크, 표시 장치의 제조 장치 및 표시 장치의 제조 방법

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Also Published As

Publication number Publication date
CN1666318A (zh) 2005-09-07
US6943066B2 (en) 2005-09-13
AU2003288893A1 (en) 2004-04-30
HK1077400A1 (en) 2006-02-10
CN100375229C (zh) 2008-03-12
WO2004025696A2 (en) 2004-03-25
EP1568069A2 (en) 2005-08-31
JP2005539378A (ja) 2005-12-22
WO2004025696A3 (en) 2005-01-06
EP1568069A4 (en) 2006-10-25
AU2003288893A8 (en) 2004-04-30
US20030228715A1 (en) 2003-12-11

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