JP2005539378A5 - - Google Patents

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Publication number
JP2005539378A5
JP2005539378A5 JP2004535396A JP2004535396A JP2005539378A5 JP 2005539378 A5 JP2005539378 A5 JP 2005539378A5 JP 2004535396 A JP2004535396 A JP 2004535396A JP 2004535396 A JP2004535396 A JP 2004535396A JP 2005539378 A5 JP2005539378 A5 JP 2005539378A5
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JP
Japan
Prior art keywords
tft
substrate
insulator
light emitting
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004535396A
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English (en)
Japanese (ja)
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JP2005539378A (ja
JP4246153B2 (ja
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Publication date
Priority claimed from US10/255,972 external-priority patent/US6943066B2/en
Application filed filed Critical
Publication of JP2005539378A publication Critical patent/JP2005539378A/ja
Publication of JP2005539378A5 publication Critical patent/JP2005539378A5/ja
Application granted granted Critical
Publication of JP4246153B2 publication Critical patent/JP4246153B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004535396A 2002-06-05 2003-05-19 電子装置を形成する方法 Expired - Fee Related JP4246153B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38652502P 2002-06-05 2002-06-05
US10/255,972 US6943066B2 (en) 2002-06-05 2002-09-26 Active matrix backplane for controlling controlled elements and method of manufacture thereof
PCT/US2003/015682 WO2004025696A2 (en) 2002-06-05 2003-05-19 Active matrix backplane for controlling controlled elements and method of manufacture thereof

Publications (3)

Publication Number Publication Date
JP2005539378A JP2005539378A (ja) 2005-12-22
JP2005539378A5 true JP2005539378A5 (enExample) 2007-05-17
JP4246153B2 JP4246153B2 (ja) 2009-04-02

Family

ID=29714899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004535396A Expired - Fee Related JP4246153B2 (ja) 2002-06-05 2003-05-19 電子装置を形成する方法

Country Status (6)

Country Link
US (1) US6943066B2 (enExample)
EP (1) EP1568069A4 (enExample)
JP (1) JP4246153B2 (enExample)
CN (1) CN100375229C (enExample)
AU (1) AU2003288893A1 (enExample)
WO (1) WO2004025696A2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6642092B1 (en) * 2002-07-11 2003-11-04 Sharp Laboratories Of America, Inc. Thin-film transistors formed on a metal foil substrate
WO2004032573A1 (en) * 2002-10-07 2004-04-15 Koninklijke Philips Electronics N.V. Method for manufacturing a light emitting display
US7214554B2 (en) * 2004-03-18 2007-05-08 Eastman Kodak Company Monitoring the deposition properties of an OLED
JP4393402B2 (ja) * 2004-04-22 2010-01-06 キヤノン株式会社 有機電子素子の製造方法および製造装置
DE102004024461A1 (de) * 2004-05-14 2005-12-01 Konarka Technologies, Inc., Lowell Vorrichtung und Verfahren zur Herstellung eines elektronischen Bauelements mit zumindest einer aktiven organischen Schicht
KR100671640B1 (ko) * 2004-06-24 2007-01-18 삼성에스디아이 주식회사 박막 트랜지스터 어레이 기판과 이를 이용한 표시장치와그의 제조방법
US20060021869A1 (en) * 2004-07-28 2006-02-02 Advantech Global, Ltd System for and method of ensuring accurate shadow mask-to-substrate registration in a deposition process
US7232694B2 (en) * 2004-09-28 2007-06-19 Advantech Global, Ltd. System and method for active array temperature sensing and cooling
KR100696479B1 (ko) * 2004-11-18 2007-03-19 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
US7132361B2 (en) * 2004-12-23 2006-11-07 Advantech Global, Ltd System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process
US7271111B2 (en) * 2005-06-08 2007-09-18 Advantech Global, Ltd Shadow mask deposition of materials using reconfigurable shadow masks
US7531470B2 (en) * 2005-09-27 2009-05-12 Advantech Global, Ltd Method and apparatus for electronic device manufacture using shadow masks
US20070137568A1 (en) * 2005-12-16 2007-06-21 Schreiber Brian E Reciprocating aperture mask system and method
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
US8152718B2 (en) * 2006-02-07 2012-04-10 Boston Scientific Scimed, Inc. Medical device light source
US20090098309A1 (en) * 2007-10-15 2009-04-16 Advantech Global, Ltd In-Situ Etching Of Shadow Masks Of A Continuous In-Line Shadow Mask Vapor Deposition System
US20090311427A1 (en) * 2008-06-13 2009-12-17 Advantech Global, Ltd Mask Dimensional Adjustment and Positioning System and Method
WO2011019429A2 (en) * 2009-06-09 2011-02-17 Arizona Technology Enterprises Method of anodizing aluminum using a hard mask and semiconductor device thereof
JP5528727B2 (ja) * 2009-06-19 2014-06-25 富士フイルム株式会社 薄膜トランジスタ製造装置、酸化物半導体薄膜の製造方法、薄膜トランジスタの製造方法、酸化物半導体薄膜、薄膜トランジスタ及び発光デバイス
US8658478B2 (en) 2010-09-23 2014-02-25 Advantech Global, Ltd Transistor structure for improved static control during formation of the transistor
CN104862669B (zh) * 2010-12-16 2018-05-22 潘重光 任意尺寸底板及显示屏的气相沉积荫罩板系统及其方法
CN102122612A (zh) * 2010-12-16 2011-07-13 潘重光 一种采用荫罩技术生产线制造器件的方法及系统
US10233528B2 (en) 2015-06-08 2019-03-19 Applied Materials, Inc. Mask for deposition system and method for using the mask
KR102696806B1 (ko) * 2016-09-22 2024-08-21 삼성디스플레이 주식회사 증착용 마스크, 표시 장치의 제조 장치 및 표시 장치의 제조 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3289053A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor
US3657613A (en) * 1970-05-04 1972-04-18 Westinghouse Electric Corp Thin film electronic components on flexible metal substrates
US4096821A (en) * 1976-12-13 1978-06-27 Westinghouse Electric Corp. System for fabricating thin-film electronic components
GB2054264B (en) * 1979-06-22 1983-11-02 France Etat Service Postale Deposition and etching process for making semi-conductor components
US4335161A (en) * 1980-11-03 1982-06-15 Xerox Corporation Thin film transistors, thin film transistor arrays, and a process for preparing the same
DE3170327D1 (en) * 1980-11-06 1985-06-05 Nat Res Dev Annealing process for a thin-film semiconductor device and obtained devices
US4450786A (en) * 1982-08-13 1984-05-29 Energy Conversion Devices, Inc. Grooved gas gate
US4461071A (en) * 1982-08-23 1984-07-24 Xerox Corporation Photolithographic process for fabricating thin film transistors
GB8332394D0 (en) * 1983-12-05 1984-01-11 Pilkington Brothers Plc Coating apparatus
US4615781A (en) * 1985-10-23 1986-10-07 Gte Products Corporation Mask assembly having mask stress relieving feature
US5250467A (en) * 1991-03-29 1993-10-05 Applied Materials, Inc. Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer
DE19513691A1 (de) * 1995-04-11 1996-10-17 Leybold Ag Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat
US6384529B2 (en) * 1998-11-18 2002-05-07 Eastman Kodak Company Full color active matrix organic electroluminescent display panel having an integrated shadow mask
US6281552B1 (en) * 1999-03-23 2001-08-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having ldd regions
US6460369B2 (en) * 1999-11-03 2002-10-08 Applied Materials, Inc. Consecutive deposition system
US6294398B1 (en) * 1999-11-23 2001-09-25 The Trustees Of Princeton University Method for patterning devices
US6582504B1 (en) * 1999-11-24 2003-06-24 Sharp Kabushiki Kaisha Coating liquid for forming organic EL element
TW490714B (en) * 1999-12-27 2002-06-11 Semiconductor Energy Lab Film formation apparatus and method for forming a film
JP2001272929A (ja) * 2000-03-24 2001-10-05 Toshiba Corp 平面表示装置用アレイ基板の製造方法
US7517551B2 (en) * 2000-05-12 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light-emitting device
JP4704605B2 (ja) * 2001-05-23 2011-06-15 淳二 城戸 連続蒸着装置、蒸着装置及び蒸着方法
US6791258B2 (en) * 2001-06-21 2004-09-14 3M Innovative Properties Company Organic light emitting full color display panel

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