CN100375229C - 用于控制受控元件的有源矩阵背板及其制造方法 - Google Patents

用于控制受控元件的有源矩阵背板及其制造方法 Download PDF

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Publication number
CN100375229C
CN100375229C CNB038159430A CN03815943A CN100375229C CN 100375229 C CN100375229 C CN 100375229C CN B038159430 A CNB038159430 A CN B038159430A CN 03815943 A CN03815943 A CN 03815943A CN 100375229 C CN100375229 C CN 100375229C
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China
Prior art keywords
substrate
deposit
deposition
conductive material
tft
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Expired - Fee Related
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CNB038159430A
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English (en)
Chinese (zh)
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CN1666318A (zh
Inventor
托马斯·P·布罗迪
保罗·R·马姆伯格
罗伯特·E·斯特普尔顿
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Advantech Global Ltd
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Advantech Global Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CNB038159430A 2002-06-05 2003-05-19 用于控制受控元件的有源矩阵背板及其制造方法 Expired - Fee Related CN100375229C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US38652502P 2002-06-05 2002-06-05
US60/386,525 2002-06-05
US10/255,972 US6943066B2 (en) 2002-06-05 2002-09-26 Active matrix backplane for controlling controlled elements and method of manufacture thereof
US10/255,972 2002-09-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN 200710092173 Division CN101038914A (zh) 2002-06-05 2003-05-19 用于控制受控元件的有源矩阵背板及其制造方法

Publications (2)

Publication Number Publication Date
CN1666318A CN1666318A (zh) 2005-09-07
CN100375229C true CN100375229C (zh) 2008-03-12

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Family Applications (1)

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CNB038159430A Expired - Fee Related CN100375229C (zh) 2002-06-05 2003-05-19 用于控制受控元件的有源矩阵背板及其制造方法

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Country Link
US (1) US6943066B2 (enExample)
EP (1) EP1568069A4 (enExample)
JP (1) JP4246153B2 (enExample)
CN (1) CN100375229C (enExample)
AU (1) AU2003288893A1 (enExample)
WO (1) WO2004025696A2 (enExample)

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US6642092B1 (en) * 2002-07-11 2003-11-04 Sharp Laboratories Of America, Inc. Thin-film transistors formed on a metal foil substrate
WO2004032573A1 (en) * 2002-10-07 2004-04-15 Koninklijke Philips Electronics N.V. Method for manufacturing a light emitting display
US7214554B2 (en) * 2004-03-18 2007-05-08 Eastman Kodak Company Monitoring the deposition properties of an OLED
JP4393402B2 (ja) * 2004-04-22 2010-01-06 キヤノン株式会社 有機電子素子の製造方法および製造装置
DE102004024461A1 (de) * 2004-05-14 2005-12-01 Konarka Technologies, Inc., Lowell Vorrichtung und Verfahren zur Herstellung eines elektronischen Bauelements mit zumindest einer aktiven organischen Schicht
KR100671640B1 (ko) * 2004-06-24 2007-01-18 삼성에스디아이 주식회사 박막 트랜지스터 어레이 기판과 이를 이용한 표시장치와그의 제조방법
US20060021869A1 (en) * 2004-07-28 2006-02-02 Advantech Global, Ltd System for and method of ensuring accurate shadow mask-to-substrate registration in a deposition process
US7232694B2 (en) * 2004-09-28 2007-06-19 Advantech Global, Ltd. System and method for active array temperature sensing and cooling
KR100696479B1 (ko) * 2004-11-18 2007-03-19 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
US7132361B2 (en) * 2004-12-23 2006-11-07 Advantech Global, Ltd System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process
US7271111B2 (en) * 2005-06-08 2007-09-18 Advantech Global, Ltd Shadow mask deposition of materials using reconfigurable shadow masks
US7531470B2 (en) * 2005-09-27 2009-05-12 Advantech Global, Ltd Method and apparatus for electronic device manufacture using shadow masks
US20070137568A1 (en) * 2005-12-16 2007-06-21 Schreiber Brian E Reciprocating aperture mask system and method
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
US8152718B2 (en) * 2006-02-07 2012-04-10 Boston Scientific Scimed, Inc. Medical device light source
US20090098309A1 (en) * 2007-10-15 2009-04-16 Advantech Global, Ltd In-Situ Etching Of Shadow Masks Of A Continuous In-Line Shadow Mask Vapor Deposition System
US20090311427A1 (en) * 2008-06-13 2009-12-17 Advantech Global, Ltd Mask Dimensional Adjustment and Positioning System and Method
WO2011019429A2 (en) * 2009-06-09 2011-02-17 Arizona Technology Enterprises Method of anodizing aluminum using a hard mask and semiconductor device thereof
JP5528727B2 (ja) * 2009-06-19 2014-06-25 富士フイルム株式会社 薄膜トランジスタ製造装置、酸化物半導体薄膜の製造方法、薄膜トランジスタの製造方法、酸化物半導体薄膜、薄膜トランジスタ及び発光デバイス
US8658478B2 (en) 2010-09-23 2014-02-25 Advantech Global, Ltd Transistor structure for improved static control during formation of the transistor
CN104862669B (zh) * 2010-12-16 2018-05-22 潘重光 任意尺寸底板及显示屏的气相沉积荫罩板系统及其方法
CN102122612A (zh) * 2010-12-16 2011-07-13 潘重光 一种采用荫罩技术生产线制造器件的方法及系统
US10233528B2 (en) 2015-06-08 2019-03-19 Applied Materials, Inc. Mask for deposition system and method for using the mask
KR102696806B1 (ko) * 2016-09-22 2024-08-21 삼성디스플레이 주식회사 증착용 마스크, 표시 장치의 제조 장치 및 표시 장치의 제조 방법

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US20020009538A1 (en) * 2000-05-12 2002-01-24 Yasuyuki Arai Method of manufacturing a light-emitting device

Also Published As

Publication number Publication date
JP2005539378A (ja) 2005-12-22
AU2003288893A8 (en) 2004-04-30
WO2004025696A3 (en) 2005-01-06
EP1568069A2 (en) 2005-08-31
WO2004025696A2 (en) 2004-03-25
CN1666318A (zh) 2005-09-07
US6943066B2 (en) 2005-09-13
AU2003288893A1 (en) 2004-04-30
HK1077400A1 (en) 2006-02-10
JP4246153B2 (ja) 2009-04-02
US20030228715A1 (en) 2003-12-11
EP1568069A4 (en) 2006-10-25

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