JP4246123B2 - 半導体集積回路の作製方法 - Google Patents

半導体集積回路の作製方法 Download PDF

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Publication number
JP4246123B2
JP4246123B2 JP2004225321A JP2004225321A JP4246123B2 JP 4246123 B2 JP4246123 B2 JP 4246123B2 JP 2004225321 A JP2004225321 A JP 2004225321A JP 2004225321 A JP2004225321 A JP 2004225321A JP 4246123 B2 JP4246123 B2 JP 4246123B2
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Japan
Prior art keywords
insulating film
gate electrode
interlayer insulating
forming
film
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JP2004225321A
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Japanese (ja)
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JP2004304210A5 (enExample
JP2004304210A (ja
Inventor
宏勇 張
真之 坂倉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004225321A priority Critical patent/JP4246123B2/ja
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Publication of JP2004304210A5 publication Critical patent/JP2004304210A5/ja
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JP2004225321A 2004-08-02 2004-08-02 半導体集積回路の作製方法 Expired - Lifetime JP4246123B2 (ja)

Priority Applications (1)

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JP2004225321A JP4246123B2 (ja) 2004-08-02 2004-08-02 半導体集積回路の作製方法

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JP2004225321A JP4246123B2 (ja) 2004-08-02 2004-08-02 半導体集積回路の作製方法

Related Parent Applications (1)

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JP27345197A Division JP4534261B2 (ja) 1997-09-20 1997-09-20 半導体装置の作製方法

Publications (3)

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JP2004304210A JP2004304210A (ja) 2004-10-28
JP2004304210A5 JP2004304210A5 (enExample) 2007-07-12
JP4246123B2 true JP4246123B2 (ja) 2009-04-02

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JP2004225321A Expired - Lifetime JP4246123B2 (ja) 2004-08-02 2004-08-02 半導体集積回路の作製方法

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882414B (zh) * 2015-05-06 2018-07-10 深圳市华星光电技术有限公司 Tft基板的制作方法及其结构

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JP2004304210A (ja) 2004-10-28

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