JP4239520B2 - 成膜装置およびその製造方法、並びにインジェクタ - Google Patents

成膜装置およびその製造方法、並びにインジェクタ Download PDF

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Publication number
JP4239520B2
JP4239520B2 JP2002240818A JP2002240818A JP4239520B2 JP 4239520 B2 JP4239520 B2 JP 4239520B2 JP 2002240818 A JP2002240818 A JP 2002240818A JP 2002240818 A JP2002240818 A JP 2002240818A JP 4239520 B2 JP4239520 B2 JP 4239520B2
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injector
source gas
film
branch pipes
branch
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JP2004079904A (ja
JP2004079904A5 (enExample
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啓修 成井
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Sony Corp
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Sony Corp
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JP2002240818A 2002-08-21 2002-08-21 成膜装置およびその製造方法、並びにインジェクタ Expired - Fee Related JP4239520B2 (ja)

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JP2002240818A JP4239520B2 (ja) 2002-08-21 2002-08-21 成膜装置およびその製造方法、並びにインジェクタ

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JP2002240818A JP4239520B2 (ja) 2002-08-21 2002-08-21 成膜装置およびその製造方法、並びにインジェクタ

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JP2004079904A JP2004079904A (ja) 2004-03-11
JP2004079904A5 JP2004079904A5 (enExample) 2005-10-20
JP4239520B2 true JP4239520B2 (ja) 2009-03-18

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080241587A1 (en) * 2004-03-29 2008-10-02 Tadahiro Ohmi Film-Forming Apparatus And Film-Forming Method
US20090110823A1 (en) 2005-09-06 2009-04-30 Tadahiro Ohmi Film-forming material and method for predicting film-forming material
JP5568729B2 (ja) * 2005-09-06 2014-08-13 国立大学法人東北大学 成膜装置および成膜方法
EP1937871A2 (en) * 2005-10-17 2008-07-02 OC Oerlikon Balzers AG Cleaning means for large area pecvd devices using a remote plasma source
JP2008038224A (ja) 2006-08-09 2008-02-21 Tokyo Electron Ltd 成膜装置、成膜システムおよび成膜方法
JP5203584B2 (ja) 2006-08-09 2013-06-05 東京エレクトロン株式会社 成膜装置、成膜システムおよび成膜方法
KR101206959B1 (ko) 2006-11-29 2012-11-30 도쿄엘렉트론가부시키가이샤 기판의 처리 장치
DE502007001071D1 (de) * 2007-03-05 2009-08-27 Re Beschichtungsanlage und Gasleitungssystem
KR101423556B1 (ko) 2008-02-11 2014-07-28 (주)소슬 가스 공급 장치 및 이를 구비하는 기판 처리 장치
CN102224275B (zh) 2009-04-03 2013-09-11 东京毅力科创株式会社 蒸镀头及成膜装置
US9540731B2 (en) * 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
JP5413305B2 (ja) * 2010-05-25 2014-02-12 信越半導体株式会社 エピタキシャル成長装置
JP5735226B2 (ja) * 2010-07-16 2015-06-17 株式会社アルバック 蒸着装置及び蒸着方法
JP5771372B2 (ja) * 2010-08-02 2015-08-26 株式会社アルバック プラズマ処理装置及び前処理方法
JP5618713B2 (ja) * 2010-09-02 2014-11-05 株式会社アルバック 薄膜形成装置及び薄膜形成方法
JP5685417B2 (ja) * 2010-11-05 2015-03-18 株式会社アルバック クリーニング装置及びクリーニング方法
JP5674434B2 (ja) * 2010-11-19 2015-02-25 株式会社アルバック 蒸着装置及び蒸着方法
CN101988185A (zh) * 2010-12-14 2011-03-23 无锡虹彩科技发展有限公司 镀膜源、真空镀膜装置及其镀膜工艺
JP2014057047A (ja) * 2012-08-10 2014-03-27 Tokyo Electron Ltd 基板処理装置及びガス供給装置
JP5862529B2 (ja) * 2012-09-25 2016-02-16 東京エレクトロン株式会社 基板処理装置及びガス供給装置
CN109661716B (zh) * 2016-09-05 2023-03-28 信越半导体株式会社 气相生长装置、外延晶片的制造方法及气相生长装置用附接件
CN111957075A (zh) * 2020-09-17 2020-11-20 潍坊潍森纤维新材料有限公司 一种粘胶快速脱气泡系统及脱气泡方法
JP7486388B2 (ja) * 2020-09-17 2024-05-17 東京エレクトロン株式会社 ガス導入構造及び処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH687258A5 (de) * 1993-04-22 1996-10-31 Balzers Hochvakuum Gaseinlassanordnung.
JP3501930B2 (ja) * 1997-12-01 2004-03-02 株式会社ルネサステクノロジ プラズマ処理方法
JP2000256860A (ja) * 1999-03-08 2000-09-19 Micro System:Kk 有機金属気相成長装置用二重ゾーン反応器
JP2001115266A (ja) * 1999-10-19 2001-04-24 Sharp Corp プラズマプロセス装置
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor

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