JP4226263B2 - 半導体素子基板の作製方法 - Google Patents

半導体素子基板の作製方法 Download PDF

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Publication number
JP4226263B2
JP4226263B2 JP2002120022A JP2002120022A JP4226263B2 JP 4226263 B2 JP4226263 B2 JP 4226263B2 JP 2002120022 A JP2002120022 A JP 2002120022A JP 2002120022 A JP2002120022 A JP 2002120022A JP 4226263 B2 JP4226263 B2 JP 4226263B2
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Japan
Prior art keywords
film
organic resin
resin film
resist
plasma treatment
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Expired - Fee Related
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JP2002120022A
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Japanese (ja)
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JP2003318402A (ja
JP2003318402A5 (https=
Inventor
孝司 村中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002120022A priority Critical patent/JP4226263B2/ja
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Publication of JP2003318402A5 publication Critical patent/JP2003318402A5/ja
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  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP2002120022A 2002-04-23 2002-04-23 半導体素子基板の作製方法 Expired - Fee Related JP4226263B2 (ja)

Priority Applications (1)

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JP2002120022A JP4226263B2 (ja) 2002-04-23 2002-04-23 半導体素子基板の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002120022A JP4226263B2 (ja) 2002-04-23 2002-04-23 半導体素子基板の作製方法

Publications (3)

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JP2003318402A JP2003318402A (ja) 2003-11-07
JP2003318402A5 JP2003318402A5 (https=) 2005-09-02
JP4226263B2 true JP4226263B2 (ja) 2009-02-18

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JP2002120022A Expired - Fee Related JP4226263B2 (ja) 2002-04-23 2002-04-23 半導体素子基板の作製方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5102535B2 (ja) 2007-05-11 2012-12-19 三菱電機株式会社 表示装置と表示装置の製造方法
US8227278B2 (en) * 2008-09-05 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Methods for manufacturing thin film transistor and display device
JP5678528B2 (ja) * 2010-09-07 2015-03-04 住友電気工業株式会社 半導体光デバイスの製造方法

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JP2003318402A (ja) 2003-11-07

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