JP2003318402A5 - - Google Patents
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- Publication number
- JP2003318402A5 JP2003318402A5 JP2002120022A JP2002120022A JP2003318402A5 JP 2003318402 A5 JP2003318402 A5 JP 2003318402A5 JP 2002120022 A JP2002120022 A JP 2002120022A JP 2002120022 A JP2002120022 A JP 2002120022A JP 2003318402 A5 JP2003318402 A5 JP 2003318402A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- resin film
- organic resin
- etching
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011347 resin Substances 0.000 claims 29
- 229920005989 resin Polymers 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 17
- 238000005530 etching Methods 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 13
- 239000004925 Acrylic resin Substances 0.000 claims 12
- 229920000178 Acrylic resin Polymers 0.000 claims 12
- 238000009832 plasma treatment Methods 0.000 claims 12
- 238000000059 patterning Methods 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000004952 Polyamide Substances 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002120022A JP4226263B2 (ja) | 2002-04-23 | 2002-04-23 | 半導体素子基板の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002120022A JP4226263B2 (ja) | 2002-04-23 | 2002-04-23 | 半導体素子基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003318402A JP2003318402A (ja) | 2003-11-07 |
| JP2003318402A5 true JP2003318402A5 (https=) | 2005-09-02 |
| JP4226263B2 JP4226263B2 (ja) | 2009-02-18 |
Family
ID=29536367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002120022A Expired - Fee Related JP4226263B2 (ja) | 2002-04-23 | 2002-04-23 | 半導体素子基板の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4226263B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5102535B2 (ja) | 2007-05-11 | 2012-12-19 | 三菱電機株式会社 | 表示装置と表示装置の製造方法 |
| US8227278B2 (en) * | 2008-09-05 | 2012-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Methods for manufacturing thin film transistor and display device |
| JP5678528B2 (ja) * | 2010-09-07 | 2015-03-04 | 住友電気工業株式会社 | 半導体光デバイスの製造方法 |
-
2002
- 2002-04-23 JP JP2002120022A patent/JP4226263B2/ja not_active Expired - Fee Related
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