JP4225908B2 - 材料堆積のための反応原子プラズマ処理方法 - Google Patents

材料堆積のための反応原子プラズマ処理方法 Download PDF

Info

Publication number
JP4225908B2
JP4225908B2 JP2003543085A JP2003543085A JP4225908B2 JP 4225908 B2 JP4225908 B2 JP 4225908B2 JP 2003543085 A JP2003543085 A JP 2003543085A JP 2003543085 A JP2003543085 A JP 2003543085A JP 4225908 B2 JP4225908 B2 JP 4225908B2
Authority
JP
Japan
Prior art keywords
plasma
workpiece
gas
torch
reactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003543085A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005509257A5 (enExample
JP2005509257A (ja
Inventor
ジェフリー ダブリュ カール
Original Assignee
ラプト インダストリーズ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ラプト インダストリーズ インコーポレイテッド filed Critical ラプト インダストリーズ インコーポレイテッド
Publication of JP2005509257A publication Critical patent/JP2005509257A/ja
Publication of JP2005509257A5 publication Critical patent/JP2005509257A5/ja
Application granted granted Critical
Publication of JP4225908B2 publication Critical patent/JP4225908B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32376—Scanning across large workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2003543085A 2001-11-07 2002-01-30 材料堆積のための反応原子プラズマ処理方法 Expired - Fee Related JP4225908B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/008,236 US6660177B2 (en) 2001-11-07 2001-11-07 Apparatus and method for reactive atom plasma processing for material deposition
PCT/US2002/002605 WO2003041146A1 (en) 2001-11-07 2002-01-30 Apparatus and method for reactive atom plasma processing for material deposition

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008193762A Division JP2008282824A (ja) 2001-11-07 2008-07-28 材料堆積のための反応原子プラズマ処理の装置及び方法

Publications (3)

Publication Number Publication Date
JP2005509257A JP2005509257A (ja) 2005-04-07
JP2005509257A5 JP2005509257A5 (enExample) 2005-12-22
JP4225908B2 true JP4225908B2 (ja) 2009-02-18

Family

ID=21730500

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003543085A Expired - Fee Related JP4225908B2 (ja) 2001-11-07 2002-01-30 材料堆積のための反応原子プラズマ処理方法
JP2008193762A Pending JP2008282824A (ja) 2001-11-07 2008-07-28 材料堆積のための反応原子プラズマ処理の装置及び方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008193762A Pending JP2008282824A (ja) 2001-11-07 2008-07-28 材料堆積のための反応原子プラズマ処理の装置及び方法

Country Status (4)

Country Link
US (3) US6660177B2 (enExample)
EP (1) EP1451861A4 (enExample)
JP (2) JP4225908B2 (enExample)
WO (1) WO2003041146A1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7510664B2 (en) * 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6660177B2 (en) 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US20070066076A1 (en) * 2005-09-19 2007-03-22 Bailey Joel B Substrate processing method and apparatus using a combustion flame
US20040118812A1 (en) * 2002-08-09 2004-06-24 Watkins James J. Etch method using supercritical fluids
KR100464856B1 (ko) * 2002-11-07 2005-01-05 삼성전자주식회사 표면 식각 방법 및 실리콘 기판 이면 식각 방법.
US20040173316A1 (en) * 2003-03-07 2004-09-09 Carr Jeffrey W. Apparatus and method using a microwave source for reactive atom plasma processing
US7371992B2 (en) * 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
AT412719B (de) * 2003-06-16 2005-06-27 Eckelt Glas Gmbh Verfahren und vorrichtung zum bereichsweisen entschichten von glasscheiben
US6969953B2 (en) * 2003-06-30 2005-11-29 General Electric Company System and method for inductive coupling of an expanding thermal plasma
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
KR100561848B1 (ko) * 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
KR100754165B1 (ko) * 2003-11-06 2007-09-03 삼성전자주식회사 반사형 액정표시소자 및 이를 이용한 프로젝터
US20060128165A1 (en) * 2004-12-13 2006-06-15 3M Innovative Properties Company Method for patterning surface modification
EP1855833B1 (en) * 2005-03-11 2020-02-26 PerkinElmer, Inc. Plasma devices and method of using them
FR2887872B1 (fr) * 2005-07-01 2008-09-05 Saint Gobain Procede et installation pour le traitement d'un substrat verrier chaud par un plasma a pression atmospherique
US7504041B2 (en) * 2006-05-03 2009-03-17 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator
CN107154534A (zh) * 2007-09-19 2017-09-12 高通股份有限公司 使来自无线功率磁谐振器的功率产量最大化的方法和设备
KR20110044195A (ko) 2008-06-09 2011-04-28 포코 그래파이트, 인코포레이티드 서브-애퍼쳐 반응성 원자 식각을 이용하는 성분의 전처리에 의해 반도체 제조 유닛의 수율을 증가시키고 고장 시간을 저감하는 방법
JP5339342B2 (ja) * 2008-09-26 2013-11-13 株式会社ジャパンディスプレイ 表示装置の修正方法およびその装置
US9063356B2 (en) * 2008-09-05 2015-06-23 Japan Display Inc. Method for repairing display device and apparatus for same
CA2751709C (en) * 2009-02-08 2023-05-23 Ap Solutions, Inc. Plasma source and method for removing materials from substrates utilizing pressure waves
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
CN205166151U (zh) * 2012-07-13 2016-04-20 魄金莱默保健科学有限公司 火炬和用于维持原子化源的系统
KR101996433B1 (ko) * 2012-11-13 2019-07-05 삼성디스플레이 주식회사 박막 형성 장치 및 그것을 이용한 박막 형성 방법
US20150042017A1 (en) * 2013-08-06 2015-02-12 Applied Materials, Inc. Three-dimensional (3d) processing and printing with plasma sources
CA2963010A1 (en) * 2014-09-30 2016-04-07 Plasco Energy Group Inc. A non-equilibrium plasma system and method of refining syngas
FR3037710B1 (fr) * 2015-06-19 2017-06-23 Exelsius Procede d’activation de surface de carte electronique pour amelioration de l’adherence d'une couche protectrice telle qu'un vernis ou d'un liant electrique, mecanique ou thermique
CN104916519B (zh) * 2015-07-06 2017-03-15 哈尔滨工业大学 一种火抛光辅助电感耦合等离子体加工装置
US10995406B2 (en) * 2016-04-01 2021-05-04 Universities Space Research Association In situ tailoring of material properties in 3D printed electronics
US20180006223A1 (en) * 2016-05-31 2018-01-04 Universities Space Research Association Method to print organic electronics without changing its properties
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
KR20180004471A (ko) * 2016-07-04 2018-01-12 세메스 주식회사 표면 처리 방법
CN107799467B (zh) * 2016-08-30 2021-01-29 上海新昇半导体科技有限公司 一种刻蚀方法、刻蚀装置及半导体晶圆分割方法
DE102017125723A1 (de) * 2017-04-25 2018-10-25 Eeplasma Gmbh Verfahren und Vorrichtung zum Wachsen eines Einkristalls
US20200258717A1 (en) 2017-10-01 2020-08-13 Space Foundry Inc. Modular print head assembly for plasma jet printing
CN109087845B (zh) * 2018-09-25 2024-03-26 南方科技大学 基于电感耦合等离子体的单晶材料抛光装置及抛光方法
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
US11488796B2 (en) * 2019-04-24 2022-11-01 Applied Materials, Inc. Thermal break for high-frequency antennae
KR20210048408A (ko) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. 반도체 증착 반응기 매니폴드
US11993011B1 (en) * 2020-02-03 2024-05-28 National Technology & Engineering Solutions Of Sandia, Llc Plasma micronozzle adapter
US12183550B2 (en) 2021-02-26 2024-12-31 Taiwan Semiconductor Manufacturing Company Limited Wafer treatment system and method of treating wafer
US12171192B1 (en) 2022-02-14 2024-12-24 GPSip, Inc. Graphical shepherding
CN114900942A (zh) * 2022-04-12 2022-08-12 南方科技大学 元件表面损伤修复装置及元件表面损伤修复方法

Family Cites Families (161)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3264508A (en) 1962-06-27 1966-08-02 Lai William Plasma torch
BE795891A (fr) 1972-02-23 1973-06-18 Electricity Council Perfectionnements aux chalumeaux a plasma
US4035604A (en) 1973-01-17 1977-07-12 Rolls-Royce (1971) Limited Methods and apparatus for finishing articles
FR2224991A5 (enExample) 1973-04-05 1974-10-31 France Etat
BE806181A (fr) 1973-10-17 1974-02-15 Soudure Autogene Elect Procede d'amorcage d'une colonne de plasma a l'interieur d'une enceinte et canne-electrode pour l'execution dudit procede
LU71343A1 (enExample) 1974-11-22 1976-03-17
JPS5673539A (en) 1979-11-22 1981-06-18 Toshiba Corp Surface treating apparatus of microwave plasma
US4306175A (en) 1980-02-29 1981-12-15 Instrumentation Laboratory Inc. Induction plasma system
US4431898A (en) 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
US4439463A (en) 1982-02-18 1984-03-27 Atlantic Richfield Company Plasma assisted deposition system
US4440558A (en) 1982-06-14 1984-04-03 International Telephone And Telegraph Corporation Fabrication of optical preforms by axial chemical vapor deposition
US4440556A (en) 1982-06-23 1984-04-03 International Telephone And Telegraph Corporation Optical fiber drawing using plasma torch
US4431901A (en) 1982-07-02 1984-02-14 The United States Of America As Represented By The United States Department Of Energy Induction plasma tube
US4689467A (en) 1982-12-17 1987-08-25 Inoue-Japax Research Incorporated Laser machining apparatus
JPS59159167A (ja) * 1983-03-01 1984-09-08 Zenko Hirose アモルフアスシリコン膜の形成方法
US4668366A (en) 1984-08-02 1987-05-26 The Perkin-Elmer Corporation Optical figuring by plasma assisted chemical transport and etching apparatus therefor
US4863501A (en) 1985-09-26 1989-09-05 Polaroid Corporation, Patent Department Method of employing plasma for finishing start rods
JPH0651909B2 (ja) 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
US4674683A (en) * 1986-05-06 1987-06-23 The Perkin-Elmer Corporation Plasma flame spray gun method and apparatus with adjustable ratio of radial and tangential plasma gas flow
US4897282A (en) 1986-09-08 1990-01-30 Iowa State University Reserach Foundation, Inc. Thin film coating process using an inductively coupled plasma
US4739147A (en) 1987-01-30 1988-04-19 The Dow Chemical Company Pre-aligned demountable plasma torch
EP0284436B1 (en) 1987-03-27 1993-07-21 Canon Kabushiki Kaisha Substrate-treating apparatus
FR2614751B1 (fr) 1987-04-29 1991-10-04 Aerospatiale Procede et dispositif pour l'injection d'une matiere sous forme fluide dans un ecoulement gazeux chaud et appareil mettant en oeuvre ce procede
FR2616614B1 (fr) 1987-06-10 1989-10-20 Air Liquide Torche a plasma micro-onde, dispositif comportant une telle torche et procede pour la fabrication de poudre les mettant en oeuvre
US5007771A (en) * 1988-02-01 1991-04-16 Keystone Environmental Resources, Inc. Method for treating contaminated soil by biological degradation on a sloped surface
JP2805009B2 (ja) 1988-05-11 1998-09-30 株式会社日立製作所 プラズマ発生装置及びプラズマ元素分析装置
US5356674A (en) 1989-05-04 1994-10-18 Deutsche Forschungsanstalt Fuer Luft-Raumfahrt E.V. Process for applying ceramic coatings using a plasma jet carrying a free form non-metallic element
US5106827A (en) 1989-09-18 1992-04-21 The Perkin Elmer Corporation Plasma assisted oxidation of perovskites for forming high temperature superconductors using inductively coupled discharges
US6068784A (en) 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
GB8927079D0 (en) * 1989-11-30 1990-01-31 Newtronics Sa Coded card reader systems
US5000771A (en) * 1989-12-29 1991-03-19 At&T Bell Laboratories Method for manufacturing an article comprising a refractory dielectric body
CA2037660C (en) 1990-03-07 1997-08-19 Tadashi Kamimura Methods of modifying surface qualities of metallic articles and apparatuses therefor
US5256205A (en) * 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
US5095189A (en) 1990-09-26 1992-03-10 General Electric Company Method for reducing plasma constriction by intermediate injection of hydrogen in RF plasma gun
US5629054A (en) 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2545498B2 (ja) * 1990-12-15 1996-10-16 富士通株式会社 ダイヤモンドの合成方法および装置
US5144151A (en) 1991-03-20 1992-09-01 Thorne Brent A Apparatus and method for detecting the presence of a discontinuity on a glass surface
US5200595A (en) 1991-04-12 1993-04-06 Universite De Sherbrooke High performance induction plasma torch with a water-cooled ceramic confinement tube
US5254830A (en) 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
RU2030811C1 (ru) 1991-05-24 1995-03-10 Инженерный центр "Плазмодинамика" Установка для плазменной обработки твердого тела
US5820940A (en) 1991-09-05 1998-10-13 Technalum Research, Inc. Preparation of adhesive coatings from thermally reactive binary and multicomponent powders
US5349154A (en) 1991-10-16 1994-09-20 Rockwell International Corporation Diamond growth by microwave generated plasma flame
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5291415A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Method to determine tool paths for thinning and correcting errors in thickness profiles of films
US5336355A (en) 1991-12-13 1994-08-09 Hughes Aircraft Company Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films
US5206471A (en) 1991-12-26 1993-04-27 Applied Science And Technology, Inc. Microwave activated gas generator
US5280154A (en) 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5302237A (en) 1992-02-13 1994-04-12 The United States Of America As Represented By The Secretary Of Commerce Localized plasma processing
JPH05226260A (ja) * 1992-02-13 1993-09-03 Matsushita Electric Ind Co Ltd 光電変換素子の製造方法およびその製造装置
US5376224A (en) 1992-02-27 1994-12-27 Hughes Aircraft Company Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates
US5238532A (en) 1992-02-27 1993-08-24 Hughes Aircraft Company Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching
US5292400A (en) 1992-03-23 1994-03-08 Hughes Aircraft Company Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching
EP0565376B1 (en) 1992-04-10 1998-07-22 Canon Kabushiki Kaisha Optical information recording apparatus and method capable of coping with a plurality of card-like recording mediums of different reflectances
US5364434A (en) 1992-09-30 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Plasma treatment of glass surfaces to remove carbon
EP0595159B1 (de) 1992-10-26 1997-12-29 Schott Glaswerke Verfahren und Vorrichtung zur Beschichtung der Innenfläche stark gewölbter im wesentlichen kalottenförmiger Substrate mittels CVD
US5429730A (en) 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
US5346578A (en) 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US5298714A (en) 1992-12-01 1994-03-29 Hydro-Quebec Plasma torch for the treatment of gases and/or particles and for the deposition of particles onto a substrate
US5386119A (en) 1993-03-25 1995-01-31 Hughes Aircraft Company Apparatus and method for thick wafer measurement
US5372674A (en) 1993-05-14 1994-12-13 Hughes Aircraft Company Electrode for use in a plasma assisted chemical etching process
US5344524A (en) 1993-06-30 1994-09-06 Honeywell Inc. SOI substrate fabrication
US5298103A (en) 1993-07-15 1994-03-29 Hughes Aircraft Company Electrode assembly useful in confined plasma assisted chemical etching
US5430355A (en) 1993-07-30 1995-07-04 Texas Instruments Incorporated RF induction plasma source for plasma processing
US5364496A (en) 1993-08-20 1994-11-15 Hughes Aircraft Company Highly durable noncontaminating surround materials for plasma etching
US5419803A (en) 1993-11-17 1995-05-30 Hughes Aircraft Company Method of planarizing microstructures
US5375064A (en) 1993-12-02 1994-12-20 Hughes Aircraft Company Method and apparatus for moving a material removal tool with low tool accelerations
FR2722939B1 (fr) 1994-07-22 1996-08-23 Alcatel Fibres Optiques Torche a plasma par induction
US5563709A (en) 1994-09-13 1996-10-08 Integrated Process Equipment Corp. Apparatus for measuring, thinning and flattening silicon structures
US5811022A (en) 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5468955A (en) 1994-12-20 1995-11-21 International Business Machines Corporation Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer
US5811021A (en) 1995-02-28 1998-09-22 Hughes Electronics Corporation Plasma assisted chemical transport method and apparatus
US5591068A (en) 1995-03-13 1997-01-07 Regents Of The University Of California Precision non-contact polishing tool
US6821500B2 (en) 1995-03-14 2004-11-23 Bechtel Bwxt Idaho, Llc Thermal synthesis apparatus and process
US5795493A (en) 1995-05-01 1998-08-18 Motorola, Inc. Laser assisted plasma chemical etching method
JPH08325095A (ja) * 1995-05-29 1996-12-10 Fujitsu Ltd ダイヤモンド膜の成長方法および装置
US5688415A (en) 1995-05-30 1997-11-18 Ipec Precision, Inc. Localized plasma assisted chemical etching through a mask
US5650032A (en) 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
JP3877082B2 (ja) * 1995-08-10 2007-02-07 東京エレクトロン株式会社 研磨装置及び研磨方法
JPH0964321A (ja) 1995-08-24 1997-03-07 Komatsu Electron Metals Co Ltd Ｓｏｉ基板の製造方法
US6017221A (en) 1995-12-04 2000-01-25 Flamm; Daniel L. Process depending on plasma discharges sustained by inductive coupling
US5965034A (en) 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
JPH09251935A (ja) 1996-03-18 1997-09-22 Applied Materials Inc プラズマ点火装置、プラズマを用いる半導体製造装置及び半導体装置のプラズマ点火方法
JPH09252100A (ja) 1996-03-18 1997-09-22 Shin Etsu Handotai Co Ltd 結合ウェーハの製造方法及びこの方法により製造される結合ウェーハ
JP3620554B2 (ja) 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JP3252702B2 (ja) 1996-03-28 2002-02-04 信越半導体株式会社 気相エッチング工程を含む半導体単結晶鏡面ウエーハの製造方法およびこの方法で製造される半導体単結晶鏡面ウエーハ
US5932293A (en) 1996-03-29 1999-08-03 Metalspray U.S.A., Inc. Thermal spray systems
WO1997039607A1 (en) 1996-04-12 1997-10-23 Hitachi, Ltd. Plasma treatment device
US5928527A (en) 1996-04-15 1999-07-27 The Boeing Company Surface modification using an atmospheric pressure glow discharge plasma source
US6040548A (en) 1996-05-31 2000-03-21 Ipec Precision, Inc. Apparatus for generating and deflecting a plasma jet
EP0902962B1 (en) 1996-05-31 2001-09-26 IPEC Precision, Inc. Apparatus for plasma jet treatment of substrates
KR20000016136A (ko) 1996-05-31 2000-03-25 피터 무몰라 플라즈마 제트로 제품을 처리하는 방법
US6209480B1 (en) 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5897712A (en) 1996-07-16 1999-04-27 Applied Materials, Inc. Plasma uniformity control for an inductive plasma source
US6056848A (en) 1996-09-11 2000-05-02 Ctp, Inc. Thin film electrostatic shield for inductive plasma processing
JPH10140340A (ja) * 1996-11-08 1998-05-26 Olympus Optical Co Ltd スパッタリング装置
US6312554B1 (en) 1996-12-05 2001-11-06 Applied Materials, Inc. Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
US5767627A (en) 1997-01-09 1998-06-16 Trusi Technologies, Llc Plasma generation and plasma processing of materials
US5955383A (en) 1997-01-22 1999-09-21 Taiwan Semiconductor Manufacturing Company Ltd. Method for controlling etch rate when using consumable electrodes during plasma etching
US5961772A (en) 1997-01-23 1999-10-05 The Regents Of The University Of California Atmospheric-pressure plasma jet
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
JP3917703B2 (ja) 1997-02-18 2007-05-23 スピードファム株式会社 プラズマエッチング方法及びその装置
DE19713352A1 (de) 1997-03-29 1998-10-01 Deutsch Zentr Luft & Raumfahrt Plasmabrennersystem
FR2764163B1 (fr) 1997-05-30 1999-08-13 Centre Nat Rech Scient Torche a plasma inductif a injecteur de reactif
US5877471A (en) 1997-06-11 1999-03-02 The Regents Of The University Of California Plasma torch having a cooled shield assembly
DE19734278C1 (de) 1997-08-07 1999-02-25 Bosch Gmbh Robert Vorrichtung zum anisotropen Ätzen von Substraten
JP3327180B2 (ja) 1997-08-29 2002-09-24 信越半導体株式会社 Ｓｏｉ層上酸化膜の形成方法ならびに結合ウエーハの製造方法およびこの方法で製造される結合ウエーハ
US6482476B1 (en) 1997-10-06 2002-11-19 Shengzhong Frank Liu Low temperature plasma enhanced CVD ceramic coating process for metal, alloy and ceramic materials
US5925266A (en) 1997-10-15 1999-07-20 The Perkin-Elmer Corporation Mounting apparatus for induction coupled plasma torch
US6194036B1 (en) 1997-10-20 2001-02-27 The Regents Of The University Of California Deposition of coatings using an atmospheric pressure plasma jet
US6139678A (en) 1997-11-20 2000-10-31 Trusi Technologies, Llc Plasma processing methods and apparatus
US6093655A (en) 1998-02-12 2000-07-25 Micron Technology, Inc. Plasma etching methods
US6230719B1 (en) 1998-02-27 2001-05-15 Micron Technology, Inc. Apparatus for removing contaminants on electronic devices
US6085688A (en) 1998-03-27 2000-07-11 Applied Materials, Inc. Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor
DE19814812C2 (de) 1998-04-02 2000-05-11 Mut Mikrowellen Umwelt Technol Plasmabrenner mit einem Mikrowellensender
US6074947A (en) 1998-07-10 2000-06-13 Plasma Sil, Llc Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching
US6218640B1 (en) 1999-07-19 2001-04-17 Timedomain Cvd, Inc. Atmospheric pressure inductive plasma apparatus
US6041623A (en) * 1998-08-27 2000-03-28 Lucent Technologies Inc. Process for fabricating article comprising refractory dielectric body
FR2782837B1 (fr) 1998-08-28 2000-09-29 Air Liquide Procede et dispositif de traitement de surface par plasma a pression atmospherique
US6406590B1 (en) 1998-09-08 2002-06-18 Sharp Kaubushiki Kaisha Method and apparatus for surface treatment using plasma
KR100277833B1 (ko) 1998-10-09 2001-01-15 정선종 라디오파 유도 플라즈마 소스 발생장치
EP0997926B1 (en) 1998-10-26 2006-01-04 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
JP2000174004A (ja) 1998-12-03 2000-06-23 Chemitoronics Co Ltd プラズマエッチングの方法およびその装置
JP3814431B2 (ja) 1998-12-03 2006-08-30 松下電器産業株式会社 半導体装置の製造方法
JP2000183044A (ja) 1998-12-11 2000-06-30 Chemitoronics Co Ltd プラズマエッチング装置およびエッチングの方法
DE19859877A1 (de) 1998-12-23 2000-06-29 Robert Magerle Nanotomographie
US6028286A (en) 1998-12-30 2000-02-22 Lam Research Corporation Method for igniting a plasma inside a plasma processing reactor
US6579805B1 (en) 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
US6153852A (en) 1999-02-12 2000-11-28 Thermal Conversion Corp Use of a chemically reactive plasma for thermal-chemical processes
US6553788B1 (en) 1999-02-23 2003-04-29 Nippon Sheet Glass Co., Ltd. Glass substrate for magnetic disk and method for manufacturing
US6262523B1 (en) 1999-04-21 2001-07-17 The Regents Of The University Of California Large area atmospheric-pressure plasma jet
US6239553B1 (en) 1999-04-22 2001-05-29 Applied Materials, Inc. RF plasma source for material processing
DE19925790A1 (de) 1999-06-05 2000-12-07 Inst Oberflaechenmodifizierung Verfahren und Vorrichtung zur Bearbeitung von optischen und anderen Oberflächen mittels Hochrate-Plasmaprozessen
US6228330B1 (en) 1999-06-08 2001-05-08 The Regents Of The University Of California Atmospheric-pressure plasma decontamination/sterilization chamber
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
US6229111B1 (en) 1999-10-13 2001-05-08 The University Of Tennessee Research Corporation Method for laser/plasma surface alloying
US6203661B1 (en) 1999-12-07 2001-03-20 Trusi Technologies, Llc Brim and gas escape for non-contact wafer holder
KR100499118B1 (ko) 2000-02-24 2005-07-04 삼성전자주식회사 단결정 실리콘 웨이퍼를 이용한 일체형 유체 노즐어셈블리 및 그 제작방법
US6468833B2 (en) 2000-03-31 2002-10-22 American Air Liquide, Inc. Systems and methods for application of substantially dry atmospheric plasma surface treatment to various electronic component packaging and assembly methods
AUPQ861500A0 (en) 2000-07-06 2000-08-03 Varian Australia Pty Ltd Plasma source for spectrometry
US6491978B1 (en) 2000-07-10 2002-12-10 Applied Materials, Inc. Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
US20020038689A1 (en) 2000-08-31 2002-04-04 Rudolf Bayer Reduced and atmospheric pressure process capable epitaxial chamber
US7351449B2 (en) 2000-09-22 2008-04-01 N Gimat Co. Chemical vapor deposition methods for making powders and coatings, and coatings made using these methods
US6929865B2 (en) 2000-10-24 2005-08-16 James J. Myrick Steel reinforced concrete systems
US6534921B1 (en) * 2000-11-09 2003-03-18 Samsung Electronics Co., Ltd. Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system
JP2002170815A (ja) 2000-12-01 2002-06-14 Matsushita Electric Works Ltd 表面処理装置及び表面処理方法
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
DE10104615A1 (de) * 2001-02-02 2002-08-14 Bosch Gmbh Robert Verfahren zur Erzeugung einer Funktionsbeschichtung mit einer HF-ICP-Plasmastrahlquelle
US6849306B2 (en) 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US20040118348A1 (en) 2002-03-07 2004-06-24 Mills Randell L.. Microwave power cell, chemical reactor, and power converter
FI121123B (fi) 2002-03-14 2010-07-15 Metso Paper Inc Menetelmä jatkuvan rainan pinnan päällystämiseksi kuivapäällystysjauheella
US20040137745A1 (en) * 2003-01-10 2004-07-15 International Business Machines Corporation Method and apparatus for removing backside edge polymer
US20040173316A1 (en) 2003-03-07 2004-09-09 Carr Jeffrey W. Apparatus and method using a microwave source for reactive atom plasma processing
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US20050018199A1 (en) 2003-07-24 2005-01-27 Leblanc Philip R. Fiber array interferometer for inspecting glass sheets
US7297892B2 (en) 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
US20050061774A1 (en) 2003-08-14 2005-03-24 Rapt Industries, Inc. Apparatus and method for non-contact shaping and smoothing of damage-free glass substrates
US7304263B2 (en) 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch

Also Published As

Publication number Publication date
EP1451861A1 (en) 2004-09-01
US20030087530A1 (en) 2003-05-08
US6660177B2 (en) 2003-12-09
JP2008282824A (ja) 2008-11-20
JP2005509257A (ja) 2005-04-07
WO2003041146A1 (en) 2003-05-15
US7311851B2 (en) 2007-12-25
EP1451861A4 (en) 2007-01-24
US20040200802A1 (en) 2004-10-14
US7955513B2 (en) 2011-06-07
US20080099441A1 (en) 2008-05-01

Similar Documents

Publication Publication Date Title
JP4225908B2 (ja) 材料堆積のための反応原子プラズマ処理方法
US7591957B2 (en) Method for atmospheric pressure reactive atom plasma processing for surface modification
US7510664B2 (en) Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
CN102165565B (zh) 用以使穿过衬底的过孔侧壁及其它深蚀刻特征部光滑的后蚀刻反应等离子体研磨
JP3267977B2 (ja) 照射による物質の選択的除去
US20180286707A1 (en) Gas additives for sidewall passivation during high aspect ratio cryogenic etch
JP6630649B2 (ja) プラズマ処理方法
Arnold et al. Ultra‐precision surface machining with reactive plasma jets
US20050184034A1 (en) Method for using a microwave source for reactive atom-plasma processing
JP5065660B2 (ja) 半導体処理
JP2006287228A (ja) セルフクリーニングが可能な半導体処理装置
US10249509B2 (en) Substrate cleaning method and system using atmospheric pressure atomic oxygen
TWI847290B (zh) 氟化對象物的氟化加工方法以及由此方法氟化加工的部件
Yamamoto et al. Feature profiles on plasma etch of organic films by a temporal control of radical densities and real-time monitoring of substrate temperature
EP3706159B1 (en) Atomic layer polishing method
Yu et al. Plasma Ultraprecision Processing
JPH10102251A (ja) 炭素原子による成膜及びエッチング処理方法及びその装置
JP2002025980A (ja) 半導体ウエハの製造方法
Butov et al. Changes in the level of nitric oxide blood at patients with pulmonary multi-drug resistant tuberculosis in the process of chemotherapy
CN120901497A (zh) 一种基于激光增强等离子体的硅基材料高效超光滑表面加工方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050131

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050131

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080128

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080424

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080502

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080728

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081104

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081125

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111205

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4225908

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121205

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131205

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees