JP4222630B2 - 物体をエピタキシャル成長させるための方法及びそのような成長を行うための装置 - Google Patents
物体をエピタキシャル成長させるための方法及びそのような成長を行うための装置 Download PDFInfo
- Publication number
- JP4222630B2 JP4222630B2 JP51419397A JP51419397A JP4222630B2 JP 4222630 B2 JP4222630 B2 JP 4222630B2 JP 51419397 A JP51419397 A JP 51419397A JP 51419397 A JP51419397 A JP 51419397A JP 4222630 B2 JP4222630 B2 JP 4222630B2
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- Japan
- Prior art keywords
- susceptor
- growth
- source material
- carrier gas
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 47
- 239000000463 material Substances 0.000 claims description 101
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 74
- 239000012159 carrier gas Substances 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 51
- 239000007789 gas Substances 0.000 claims description 33
- 239000007787 solid Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 22
- 239000000843 powder Substances 0.000 claims description 21
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 16
- 229910000077 silane Inorganic materials 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 229910003465 moissanite Inorganic materials 0.000 claims description 14
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000859 sublimation Methods 0.000 claims description 12
- 230000008022 sublimation Effects 0.000 claims description 12
- 238000011144 upstream manufacturing Methods 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000001294 propane Substances 0.000 claims description 6
- 238000005336 cracking Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims 3
- 230000000996 additive effect Effects 0.000 claims 3
- 238000005054 agglomeration Methods 0.000 claims 2
- 230000002776 aggregation Effects 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 230000032258 transport Effects 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 62
- 239000013078 crystal Substances 0.000 description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000002243 precursor Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 238000007792 addition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005130 seeded sublimation method Methods 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- 238000005092 sublimation method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010944 pre-mature reactiony Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 235000019219 chocolate Nutrition 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005087 graphitization Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9503428A SE9503428D0 (sv) | 1995-10-04 | 1995-10-04 | A method for epitaxially growing objects and a device for such a growth |
| SE9503428-6 | 1995-10-04 | ||
| PCT/SE1996/001232 WO1997013013A1 (en) | 1995-10-04 | 1996-10-02 | A method for epitaxially growing objects and a device for such a growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11513353A JPH11513353A (ja) | 1999-11-16 |
| JP4222630B2 true JP4222630B2 (ja) | 2009-02-12 |
Family
ID=20399689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51419397A Expired - Lifetime JP4222630B2 (ja) | 1995-10-04 | 1996-10-02 | 物体をエピタキシャル成長させるための方法及びそのような成長を行うための装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4222630B2 (de) |
| AT (1) | ATE220132T1 (de) |
| DE (1) | DE69622182T3 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4664464B2 (ja) * | 2000-04-06 | 2011-04-06 | 新日本製鐵株式会社 | モザイク性の小さな炭化珪素単結晶ウエハ |
| JP2002012500A (ja) * | 2000-06-21 | 2002-01-15 | Showa Denko Kk | 炭化珪素単結晶の製造方法、製造装置および炭化珪素単結晶 |
| JP5152293B2 (ja) * | 2010-10-08 | 2013-02-27 | 新日鐵住金株式会社 | モザイク性の小さな炭化珪素単結晶ウエハの製造方法 |
| CN113026099A (zh) * | 2021-03-05 | 2021-06-25 | 广州爱思威科技股份有限公司 | 碳化硅单晶生长控制装置及控制方法 |
-
1996
- 1996-10-02 JP JP51419397A patent/JP4222630B2/ja not_active Expired - Lifetime
- 1996-10-02 AT AT96933699T patent/ATE220132T1/de active
- 1996-10-02 DE DE69622182T patent/DE69622182T3/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11513353A (ja) | 1999-11-16 |
| ATE220132T1 (de) | 2002-07-15 |
| DE69622182T3 (de) | 2007-03-01 |
| DE69622182D1 (de) | 2002-08-08 |
| DE69622182T2 (de) | 2003-01-30 |
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