JP4222630B2 - Method for epitaxially growing objects and apparatus for performing such growth - Google Patents

Description

[Technical field and background technology]
The present invention relates to a substrate in which an object consisting of a) SiC, b) a Group III metal nitride, and c) one of their alloys is placed in a susceptor having a surrounding wall (surrounding wall). In an epitaxial growth process, the walls are heated, thereby heating the substrate and the growth source material above a temperature level at which the sublimation of the growth material begins to significantly increase, and the carrier gas flow To the substrate in the susceptor, carrying the source material towards the substrate and growing it, and further for epitaxially growing such an object according to the preamble of the independent claim relating to the device of the claims Also related to the device.
Therefore, the present invention can be applied to the growth of SiC, Group III metal nitrides, and all types of alloys thereof, and has high crystal quality at a reasonable growth rate from a commercial viewpoint. The general problem of growing such objects will now be further described by way of example for SiC, but is not limited thereto.
SiC single crystals are particularly intended for use in applications where advantages can be obtained from the superior properties of SiC compared to Si, i.e., the ability of SiC to perform well under extreme conditions. It is especially grown for use in various types of semiconductor devices such as diodes, transistors, and thyristors. Due to the large band gap between the forbidden band and the conduction band of SiC, devices can be made that can operate from such materials at high temperatures, ie up to 1000K.
Various techniques are known for epitaxial growth of silicon carbide, in which sublimation growth techniques using seeds are currently commonly used to grow silicon carbide crystals for subsequent substrate (substrate) manufacture. Yes. This technique is limited by both crystal quality and purity. Substrates made by this method have holes, called micropipes, and have a mosaic structure associated with particles with slightly different crystal orientations. Crystal growth is performed by sublimating SiC source powder in a container. The SiC vapor moves to the seed crystal by an artificially applied temperature gradient. The growth rate is determined by the degree of supersaturation of the vapor in the atmosphere around the seed crystal, which in turn is determined by the temperature, the applied temperature gradient, and the pressure in the apparatus. Thus, steam movement is characterized by diffusion processes and convection. For example, it is necessary to reduce the pressure in the container to effectively move the sublimated SiC powder while preventing too much SiC vapor from colliding while going to the seed crystal. The growth rate obtained with such an apparatus is on the order of several mm / hour. Typical temperatures, temperature gradients, and pressures are on the order of 2400 ° C., 10-30 ° C./cm, and 5-50 mbar for the source material, respectively. The atmosphere is usually Ar. The advantage of this method is its simplicity. The disadvantages of this method are the limited control of the equipment, unsatisfactory crystal quality, low purity, which depends mainly on the purity of the source material and can be improved by choosing a more pure source material in practice. . Since Si inevitably escapes from a container that is not completely sealed, the C / Si ratio of the vaporized source material cannot be kept constant during the entire growth. This adversely affects growth and causes crystal defects. In order to grow a large crystal for later substrate manufacture, the growth must be interrupted from time to time to replenish the container with new source material. These interruptions also disturb the growing crystal. During growth, the presence of a temperature gradient at the growth interface causes the formation of crystal defects such as micropipes, lattice defects, and point defect aggregates.
Another method used for epitaxial growth of the silicon carbide layer is chemical vapor deposition, in which the purity and crystal quality are much better than in the case of sublimation growth using seeds. The gas required for growth is carried to the substrate by a carrier gas, usually hydrogen. In the case of SiC, the precursor gases used are usually silane and propane. The precursor gas decomposes or cracks, and the silicon and carbon components move onto the growing crystal surface and enter the appropriate lattice points. The temperature of the apparatus is usually kept below 1600 ° C. There is essentially no temperature gradient on the crystal growth surface. The advantage of the CVD method is purity and crystal quality, which is mainly limited by the quality of the substrate. The disadvantage of the CVD method is its low growth rate, which either eliminates the possibility of growing crystals for manufacturing substrates with this technique, or is of high quality on a scale of commercial interest. It even loses the possibility of growing layers. A typical growth rate for a CVD-grown SiC epitaxial layer is on the order of a few μm / hour at 1600 ° C.
Recently, another method has been given, namely High Temperature Chemical Vapor Deposition (HTCVD) [1995 Kyoto, International Conference on SiC and Related Materials-Paper on High Temperature Chemical Vapor Deposition published in ICSCRM-95 Technical Summary and U.S. Pat. 08/511324]. This method is a CVD method which is technically performed at a very high temperature, in which the sublimation and etching of the seed crystal (substrate) and the growing crystal or layer becomes important. Etching of the growing surface has been shown to improve crystal quality, and the purity of the grown crystal is also very high due to the purity of the precursor gas. The growth rate can be increased to the order of several mm / hour because the surface mobility of the atoms increases, and the increase in the mobility allows the atoms to find the correct lattice point faster. In the HTCVD method, a temperature of about 1900 ° C. to 2500 ° C. is used. The advantages of the HTCVD method are high purity, high crystal quality, and high growth rate. The disadvantage of this technique is that it is difficult to establish conditions suitable for growth in an artificial manner by adding silicon and carbon precursor gases in the correct amounts at all times, ie during temperature rise to growth temperature and during growth. That is. If the amount of precursor gas added is too small, the degree of etching or sublimation that occurs is too high, which can cause graphitization of the crystal surface, which causes crystal defects or no growth at all. It can even interfere. If too much is added, the degree of supersaturation may be too high for surface mobility and the growth may be polycrystalline. Therefore, these conditions must be kept artificially thermodynamically close to equilibrium, which is very cumbersome to achieve. A solution to this problem is given in pending patent applications filed by the applicant on the very same day as this application. Although this technique is considered to form the state of the art described in the preamble of the claims, the inventive technique defined below is not actually a CVD type technique.
Another problem is the transfer of the growth source material to the susceptor, which is the transfer of silane in the HTCVD process performed to grow SiC. Silane decomposes quickly and can cause complete or partial blockage of the gas tube leading to the susceptor, or it can completely deplete the gas, which makes it impossible to grow. Furthermore, when silane is used at a high concentration, there is a risk of explosion.
[Disclosure of the Invention]
It is an object of the present invention to epitaxially grow both SiC and Group III nitride or alloy layers and boule objects at high growth rates while still increasing the crystal quality of the grown object. It is to propose a solution to the latter problem described above by providing a method and apparatus that enable it and solving those problems.
According to the present invention, this object is achieved by adding at least a portion of the growth source material to the carrier gas stream upstream from the susceptor and supplying it to the susceptor by means of said carrier gas stream, either a) solid, b) liquid. Achieved by providing a method as defined at the beginning of the text, comprising the steps of transporting and heating to a vapor state by heating in a container having the susceptor and transporting and growing in a vapor state towards the substrate. The In the case of SiC, this approach allows premature decomposition of the silane and / or complete depletion of the silane in the tube leading to the growth chamber, thus adding a liquid or solid source material to the carrier gas stream. It can be avoided. This source material is, for example, Si, C, SiC, or a combination thereof, preferably a powdered solid. The most preferred proposal is to make these additions as Si and C (graphite powder) or SiC powder. Since the melting temperature of Si is 1414 ° C., Si is introduced much more effectively into the growth chamber without causing premature reaction in the tube. Such premature reactions can completely block the conduit when silane is used as a precursor.
With these additions, the movement of the source material is performed much more efficiently than when silane is used as the source material. Because if the gas pressure of the silane in the gas mixture supplied to the susceptor is increased too high to obtain a large growth rate, the silane will be transported through the susceptor without causing any cracking or growth. Because. With regard to the seed-based sublimation method, the source material can be added to the carrier gas in this manner and crystals of unlimited length can be grown without interruption.
According to another preferred embodiment of the present invention, at least a portion of the source material is present in the container as a growth material in a solid state, vaporized by said heating, and carried to the substrate in vapor by the carrier gas stream for growth. . The definition of “as a growth material” should be interpreted, for example, when growing SiC, said portion of the source material is solid state SiC. Therefore, the method of the present invention is an improvement of the high-temperature chemical vapor deposition method, which is a hybrid of the technology and seed-use sublimation technology, and utilizes the advantages of each of these technologies. The presence of this type of source material in the container in a solid state allows very good control over a wide parameter range, so that high quality crystals can be grown at high growth rates.
Si and C-containing vapors produced by SiC etching or sublimation are brought onto the substrate by a carrier gas or a carrier gas combined with a temperature gradient. As a result, as long as a considerable amount of SiC is always present in the growth chamber, it is possible to obtain a state close to thermodynamic equilibrium at all times and throughout the entire growth process. Thus, an artificial means of creating a thermodynamic equilibrium while raising the temperature to the growth temperature is unnecessary. This improvement makes it easy to grow SiC boules without using a temperature gradient. The advantage of the seed-based sublimation method, which gives a large growth rate, is the carrier for the transfer without having to suffer from the disadvantages of the technology associated with using the temperature gradient to move the vaporous source material. Growth can be advantageously performed by using a gas flow. This is because introducing a carrier gas to carry the source material vapor is an important issue, and in the case of the present invention, it is not necessary to add any precursor gas to the carrier gas. If no source material is added to the carrier gas stream upstream of the vessel, growth stops if the exposed surface of the SiC source material becomes too small to maintain supersaturation. Transfer with a carrier gas along with the proposed modifications has a number of advantages.
The movement of the source material becomes much more efficient, which means that the growth rate can be substantially increased compared to the seeded sublimation method. In order to maintain a large growth rate, it is necessary to apply a fairly small temperature gradient or no temperature gradient at all, which can significantly improve the crystal quality. Vapor movement can be very easily controlled by increasing or decreasing the carrier gas flow. Supersaturation can always be maintained at a controllable level. If the temperature gradient is negative, i.e. the substrate is at a higher temperature than the source material, controlled etching is also possible. Negative temperature gradients do not cause problems when growth is desired. This is because the movement of the source material by the carrier gas is much more effective than the temperature gradient. The dopant can be easily added to the carrier gas in the same manner as in CVD. As the gas passes through the container, much material will be lost and will be deposited or carried on other parts of the container. However, these losses can be estimated to be essentially the same for both silicon-containing and carbon-containing vapors, which simplifies maintaining a constant C / Si ratio. In this embodiment, the growth rate can be easily controlled by controlling the temperature at which the susceptor wall is heated and the flow rate of the carrier gas stream. The definition “container” should be construed as the object defining the chamber associated with the susceptor chamber, in which there are prevailing temperatures above the temperature level at which the sublimation of the growth material begins to increase significantly. For example, the container may be the same as the susceptor or may include a chamber outside the susceptor that is immediately upstream of the susceptor chamber. It should be emphasized that the corresponding reasoning can be applied to the case where an object made of a material other than SiC is grown.
In this way, it can be ensured that all the solid source material in the container is never consumed, and there is always a buffer of growth source solid source material in the container, so that in the apparatus It is never difficult to maintain a thermodynamic equilibrium. If the desired thermodynamic state can be achieved artificially at any time, the SiC source material in the container can be omitted, and if the source material is added to the container as a solid or liquid, the apparatus is HTCVD. And essentially the same.
Corresponding features and their advantages are found in the device according to the invention for epitaxially growing objects and are defined in the claims.
Further preferred features and advantages of the device and method according to the invention will become apparent from the following description and other dependent claims.
[Brief description of the drawings]
With reference to the accompanying drawings, a specific description of preferred embodiments of the invention will now be given by way of example.
In the figure,
FIG. 1 is a longitudinal section through a device according to the first aspect of the invention.
FIG. 2 is a perspective view of a susceptor used in the apparatus of FIG. 1 according to a first preferred embodiment applied to epitaxially grow layers, with a portion of the susceptor wall cut away to illustrate the interior of the susceptor. ing.
FIG. 3 is a perspective view similar to FIG. 2 of a susceptor according to a second preferred embodiment applied to grow a boule according to the same inventive method used for growth in the embodiment according to FIGS. is there.
FIG. 4 is a perspective view similar to FIGS. 2 and 3 of a susceptor according to a third preferred embodiment used to allow growth of an almost unlimited length boule.
[Detailed Description of Preferred Embodiments of the Present Invention]
FIG. 1 schematically illustrates an apparatus according to a preferred embodiment of the present invention for epitaxially growing SiC on a SiC substrate in a simplified manner by a method according to a preferred embodiment of the present invention that is a hybrid of seed-based sublimation and high temperature chemical vapor deposition. The apparatus in question has other means, such as a pump, but conventional equipment not related to the present invention is easily removed to clearly illustrate and concentrate on the features of the present invention. You will understand. The apparatus has a case 1 constituted by a quartz tube 2 extending substantially vertically and two opposite end flanges 3 and 4. The end flange 4 is preferably removable so that it can enter the interior of the tube 2. A conduit 5 is inserted through the lower end flange 3 for supplying a flow of at least one carrier gas for the purpose of delivering the growth source material to the substrate inside the susceptor. The composition and operation of this gas mixture containing at least one carrier gas will be discussed in more detail later. The conduits 5 are connected to other conduits 20-23, which lead to a source for separately adding the growth source material to the carrier gas, which are not shown in the figure. However, a flow rate adjusting means is provided for adjusting the content of each component in the gas mixture as desired. There is also such a flow control means for the carrier gas flow. In FIG. 1, the conduits 20-23 are illustrated as entering the conduit 5 near the case 1 for the sake of simplicity, but in practice they will probably be at a long distance therefrom.
Furthermore, the device has a funnel 6 for concentrating the gas flow from the conduit 5 to the susceptor 7 (see also FIG. 2). The susceptor 7 shown in FIGS. 1 and 2 is used for epitaxial growth of a layer of SiC. The susceptor is substantially cylindrical and the surrounding wall 8 has a substantially uniform thickness. The walls are made of graphite, but their interior is covered with a layer of SiC 9 or alternatively is covered with a cylindrical plate made of SiC. The space surrounding the susceptor is closed and filled with graphite foam 10 for thermal insulation that protects the surrounding quartz tube 2. A radiation means 11 with an Rf electric field in the form of an Rf coil surrounds the tube 2 along the longitudinal extent of the susceptor 7. The heating means 11 is configured to generate an Rf electric field that uniformly heats the susceptor wall 8 and thereby heats the gas mixture introduced into the susceptor.
The susceptor 7 has a lid 12, which is made of the same material as the rest of the susceptor and has a SiC substrate 13 disposed on the underside of the susceptor, which can be detached from the other parts of the susceptor, The substrate can be removed after the layer has grown. The lid 12 is provided with a surrounding gas outlet hole 14 so that a preferred laminar gas flow enters the susceptor chamber 18 through the lower inlet 15, flows near the substrate, exits the susceptor through the upper outlet 14, and then Exit the device through a conduit 16 connected to a pump, not shown.
The internal temperature of the susceptor 7 may be examined by viewing the inside of the susceptor with a pyrometer through a window indicated by 17.
At the bottom of the susceptor, at least a portion of the growth source material is disposed in the form of high purity SiC powder. The funnel 6 has a peripheral opening 25 to allow the flow of the gas mixture into the susceptor chamber 18.
The function of the device is as follows.
The heating means 11 heats the susceptor wall 8, thereby bringing the susceptor chamber 18 and the substrate 13 and the SiC powder 24 contained therein to a temperature above the temperature level at which SiC sublimation begins to increase considerably, in the present case. Is heated to a temperature of about 2300 ° C. This means that the SiC powder sublimes and the substrate SiC also sublimes. H ₂ A gas stream comprising a carrier gas, which may be Ar, Ar, or He, is supplied to susceptor chamber 18 through conduit 5 and funnel 6. The definition of carrier gas is a gas that does not actively participate in growth, that is, a gas that does not have a component that grows into the substrate body. He and Ar are highly reactive in that they do not react with cracked precursor gas reactives such as propane. ₂ He is particularly well suited for use in growth because of its relatively high thermal conductivity compared to Ar. Since the carrier gas stream carries powder sublimated SiC present in the vapor state in the susceptor chamber 18 towards the substrate 13, a temperature gradient is not necessary to carry the SiC vapor to the substrate. Although much Si and C escape with this device, it can be maintained at a reasonable level because it can be operated at atmospheric pressure. The SiC vapor delivered to the substrate in this manner creates an atmosphere around the substrate having a certain “SiC gas pressure”, which serves to prevent the sublimation of SiC from the substrate and its etching. In this way, supersaturation is always maintained and etching of the substrate does not occur, thus ensuring that high quality SiC crystals grow on the substrate at a high growth rate. It has been found that there is no problem growing an object of 0.5 mm / hr at 2300 ° C. in this way, and perhaps a much higher growth rate can be expected. If this so-called SiC atmosphere is not provided around the substrate, the following will occur: All SiC begins to sublime at a sufficiently high temperature, because the Si component from the substrate is at a rate greater than that of carbon. It means that the substrate is exited, so that a graphite film will be formed on the substrate. In the case of chemical vapor deposition, the Si-containing and C-containing precursor gases must be supplied in precise proportions that are very difficult to control at the beginning of the growth. If this happens, the results of growth will be very bad or, in the worst case, growth will be impossible. The parameters required to control the growth rate can be easily controlled within a wide parameter range in the method according to the invention, so that appropriate control of the relevant parameters can always be ensured. There are two main parameters for controlling the growth rate: the temperature inside the susceptor and the carrier gas flow rate. The temperature inside the susceptor can be adjusted by controlling the heating means 11 and the growth rate, and the quality of the growing crystal increases with temperature. However, high temperatures also include the risk of impurities coming out of the susceptor walls. The carrier gas flow rate controls the flow of vaporized SiC to the atmosphere around the substrate. The growth rate can be varied very effectively by controlling the carrier gas flow, so that the apparatus has a schematically shown means 26 for adjusting the flow rate of the carrier gas flow. Increasing the carrier gas flow rate means increasing the growth rate, but too high a growth rate involves the risk of reducing the quality of the growth material. The substrate should not have a higher temperature than the SiC powder. This is because it means a temperature gradient giving the result of the normal movement of SiC towards the low temperature region, ie SiC powder. However, in this case, the carrier gas flow is completely dominant, and even if a negative temperature gradient occurs in the room that tends to occur if the "SiC vapor" is pushed in the right direction and the susceptor is placed vertically, Regardless, positive growth always takes place.
Furthermore, the ratio of Si-containing molecules to C-containing molecules can be kept constant in the susceptor chamber 18 by adding silane and propane to the carrier gas through conduits 22 and 23. However, the silane will be partially decomposed or cracked on the way to Case 1, which will cause at least partial blockage of the conduit in question, degrading the function of the entire device and reducing reliability. Will. The risk of such cracking is greater at lower gas flow rates. However, this problem has been solved by adding Si or SiC as a powder through conduit 20 to the carrier gas stream. In this manner, carbon or graphite can be added as a powder if it is found necessary. Since Si melts at high temperatures, such as about 1400 ° C., there is no risk of clogging the conduit in question. This means that Si may be supplied to the susceptor chamber 18 at a high concentration in the form of Si powder, not in the form of silane. In addition, the danger of explosion is eliminated. Any combination of adding components to the carrier gas can also be used, but it would be most preferred to add a powder of components, such as Si powder, and ultimately a liquid through conduit 20 or 21 to the carrier gas stream. . It is also possible to analyze the gas exiting the device through the conduit 16 and to provide a means used to adjust the addition according to the results of this analysis. This method of controlling the growth-related ratio, in the case of SiC, the C / Si ratio, is useful when the target material is grown using chemical vapor deposition, i.e. in the form of the material to be grown, in the source material Can be used successfully when not present.
The initial stage of growth is particularly important for the quality of the layer that grows immediately thereafter, but the initial stage can be adequately controlled by the method described above, after which a very large control speed, sufficient mm / hour. The speed indicated in units can be achieved. Due to the efficient movement achieved, large growth rates can be obtained at these high temperatures. The purity of Si powder or silane and graphite or propane supplied to the susceptor chamber by the carrier gas can dramatically reduce the entry of unwanted compensating acceptors into the growth layer, while CVD at normal temperatures. Epitaxial growth of such a layer gives the result that the lifetime of minority carriers in the growing crystal is significantly increased. This is a very important improvement for the production of high power bipolar devices. In this way, crystals can be grown at the same or higher growth rate than when using seeded sublimation, but still with much higher crystal quality and purity. .
FIG. 3 shows a susceptor 7 'according to a second preferred embodiment of the present invention, which is used to grow a SiC boule 19 on a substrate in the form of a seed crystal designated 13'. This susceptor is intended to be incorporated into the device according to FIG. 1 in the same way as the susceptor according to FIG. The susceptor according to FIG. 3 differs only from that according to FIG. 2 in that a gas outlet hole 14 ′ is arranged at the bottom of the susceptor. Thus, as shown, the gas flow reaches the region of the growing SiC boule where the source material adheres and the remaining components flow back and exit the susceptor through the holes 14 '.
In this way, SiC boule having high crystal quality can be epitaxially grown at a sufficiently large component rate at the high temperature used. As already mentioned, there is a thermodynamic equilibrium in the susceptor chamber 18 'where the C / Si ratio can be easily maintained constant by appropriate additions as described above. This means that the degree of supersaturation that affects both growth rate and micropipe formation can be changed without the use of temperature gradients.
FIG. 4 shows a susceptor according to a third preferred embodiment of the present invention. This susceptor has only one fundamental feature that is different from the other two embodiments, namely the lid 12 ", which allows the growth crystal 19" to be pulled up constantly, preferably in the case of chocolate ski growth. You can pull it up while rotating it. If this is not possible, a much longer susceptor chamber will have to be heated to grow long objects. The large distance between the solid source material and the crystal will be detrimental in relation to adhering to the susceptor wall before reaching the crystal. In this way, the method according to the invention can be used to continuously grow SiC boules having the same quality throughout the growth to an unlimited length. In this embodiment, the growth source material can be added to the carrier gas stream upstream of the susceptor 7 and conveyed to the susceptor in the solid or liquid state by the carrier gas stream to reliably supply the growth source material continuously. . Such materials may be Si, C and / or SiC powders.
The disadvantage of the method according to the invention is that the loss of material that occurs compared to seeded sublimation growth is increased, but by carrying it with a carrier gas, the pressure can be maintained at atmospheric pressure, so that Loss can be limited to some extent. These losses are essentially dependent on the gas velocity. For example, this is a minor problem as long as these losses do not degrade the function of the device due to downstream blocking filters or tubes. This is because a new supply of new source material can be maintained at any time.
Of course, the present invention is in no way limited to the preferred embodiments of the apparatus and method described above, and several modifications will become apparent to those skilled in the art without departing from the basic idea of the invention. It will be.
As already mentioned, the present invention can also be applied to the growth of Group III nitrides, Group III nitride alloys, or SiC and one or more Group III nitride alloys. You can also expect good results corresponding to them.
The definition of “object” in the claims is used to include the epitaxial growth of all types of crystals, such as layers of varying thickness, as well as thick boules.
Of course, all definitions of materials include inevitable impurities as well as intentional doping.
It is of course possible to add a portion of the growth source material into the carrier gas stream as a liquid or gas instead of a solid and bring it into the vapor state in the susceptor chamber (in the liquid state). Is never desired. The choice of carrier gas is not limited in any way to the two cases mentioned above.
It is possible to provide the source material as a growth material in the susceptor in a state different from the powder, for example as a lump or a combination of powder and lump. As already mentioned, this can also be obtained by making the susceptor or container of growth material or coating the interior with it.
It is also possible to provide the last-mentioned source material to another part of the susceptor rather than the bottom, and could be outside the vertical region of the susceptor.
As another aspect of the present invention, the crystal may be moved out of the susceptor chamber by a method other than by a screw, eg, displacement caused by tension.
The definition of “carrying into a vapor state by heating in a container” in the claims is that the susceptor chamber is heated and the upstream container chamber is vaporized in a container where the solid source material is outside the susceptor. This includes the case of heating indirectly to such a temperature as to become a state.
The definition “component” should be understood as part of the growth material and may not be the same as the growth material.

Claims (25)

An object (19) consisting of any of a) SiC, b) Group III nitrides, and c) their alloys is placed on a substrate (13) placed in a susceptor (7) having a peripheral wall (8). A method of epitaxial growth comprising heating these walls, thereby heating the substrate and growth source material above a temperature level at which sublimation of the growth material begins to increase, and a carrier gas stream in the susceptor. In an epitaxial growth process in which the source material is fed toward the substrate and transported toward the substrate to grow it, at least a portion of the growth source material is added to a carrier gas stream upstream from the susceptor (7). The carrier gas stream carries either a) a solid or b) a liquid to the susceptor, and is vaporized by the heating in a container having the susceptor. And carries in a vapor state towards said substrate, an epitaxial growth method characterized by growing,
Moreover, SiC is a growth material,
a) Si, b) C, c) SiC, d) Si and C, e) Si and SiC, f) C and SiC, g) SiC, C and Si as powders are added to the carrier gas stream. The method described above. The method of claim 1 wherein the source material added to the carrier gas stream contains at least one component of the material to be grown. 3. A method according to claim 1 or 2, wherein at least a portion of the growth source material is added to a carrier gas stream upstream from the susceptor (7) and carried to the susceptor in a vapor state by the carrier gas stream. Adding at least a portion of the vapor state of the growth source material to the carrier gas stream upstream from the susceptor (7) and cracking by heating in the susceptor to form a component of the growth material. 4. The method according to any one of items 3. The method according to claim 4, wherein the part of the vapor state is one of a) silane, b) propane, c) silane and propane. At least a portion (24) of the source material is present as a growth material as a solid in the vessel, is vaporized by heating and is carried and grown in vapor form by a carrier gas stream toward the substrate (13). 6. The method according to any one of 5 above. The method according to claim 6 , wherein the susceptor (7) constitutes a container and a solid source material portion is present in the susceptor. The solid source material portion, making a) vessel growth material, b) coating the interior of the container with growth material, c) placing the growth material in a container, providing in the container by any of claims 6 Or the method according to 7 . The method of claim 8 , wherein the solid portion (24) of the source material is present in the container as either a) powder, b) agglomeration, c) powder or agglomeration. The method according to claim 1 , wherein the susceptor wall (8) is heated to a temperature higher than 1900 ° C. The method according to any one of claims 1 to 10 , wherein the pressure in the susceptor is maintained at substantially atmospheric pressure. An apparatus for epitaxially growing an object made of any one of a) SiC, b) Group III nitride, and c) their alloys on the substrate (13), and a chamber (18) for containing the substrate. ) A susceptor (7) having a surrounding wall (8) surrounding it), heating the surrounding wall, thereby heating the substrate and growth source material above a temperature level at which sublimation of the growing material begins to increase. And means (5) for supplying a carrier gas stream towards the substrate in the susceptor (7) and transporting the source material towards the substrate (13) to grow it. ) And a vessel having the susceptor (7) and at least a portion of the growth source material to a carrier gas stream upstream from the susceptor (7). And the supply means (5) carries the additive source material to the susceptor either a) solid or b) liquid by means of the carrier gas stream. And the heating means brings the additive source material into a vapor state by heating in the vessel, and transports the additive source material in a vapor state toward the substrate by the carrier gas flow to grow. that is configured to an epitaxial growth apparatus according to claim,
Moreover, it is used to grow SiC,
The member (20, 21) is a) Si, b) C, c) SiC, d) Si and C, e) Si and SiC, f) C and SiC, g) SiC, C and Si. An apparatus as described above configured to be added to a carrier gas stream as a powder. A member (20, 21) for adding at least a portion of the growth source material to the carrier gas stream upstream from the vessel (7), wherein the supply means (5) susceptors the added source material by the carrier gas stream. The device of claim 12 , wherein the device is configured to carry in a vapor state. 14. Apparatus according to claim 12 or 13 , wherein the member (20, 21) is configured to add a source material portion to the carrier gas stream in the form of at least one component of the material to be grown. Member (22, 23) for adding at least a portion of the vapor state of the growth source material to the carrier gas stream upstream from the susceptor and cracking by heating within the susceptor to form a component of the growth material. a device according to any one of claims 12-14. Means for providing the source material is configured to provide a portion (24) of the source material as a growth material as a solid in the container, and the heating means (11) heats the solid source material to a vapor state; The apparatus according to any one of claims 12 to 15 , wherein the apparatus is adapted to be carried and grown on a substrate (13) by a carrier gas stream. 17. Apparatus according to claim 16 , wherein the susceptor (7) constitutes a container and the means for providing source material is used to provide a solid source material portion in the susceptor. The means for providing the source material comprises: a) making the container with the growth material; b) coating the interior of the container with the growth material; c) providing the growth material into the container; 18. A device according to claim 16 or 17 used for providing a part. Means for providing a source material, a) powder, b) lumps c) powder and lumps, is configured to provide the solid portion of the source material to any and to the container (24), according to claim 18 The device described in 1. 13. The device according to claim 12 , wherein the heating means (11) is configured to heat the susceptor wall to a temperature higher than 1900 ° C. 21. The apparatus according to claim 20 , wherein the heating means (11) is configured to heat the susceptor wall to a temperature between 2000C and 2500C. The apparatus according to any one of claims 12 to 21 , comprising means for maintaining a substantially atmospheric pressure in the susceptor. Supply means (5) is, a) noble gas, b) H _2, c) is configured to supply to the susceptor rare gas and H _2, either as a carrier gas, any claim 12 to 22 The apparatus according to claim 1. 24. Apparatus according to claim 23 , wherein the supply means (5) is arranged to supply helium as carrier gas to the susceptor. 25. Apparatus according to any one of claims 12 to 24 , comprising means (26) for controlling the flow rate of the carrier gas stream.

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