JP4216003B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4216003B2
JP4216003B2 JP2002158582A JP2002158582A JP4216003B2 JP 4216003 B2 JP4216003 B2 JP 4216003B2 JP 2002158582 A JP2002158582 A JP 2002158582A JP 2002158582 A JP2002158582 A JP 2002158582A JP 4216003 B2 JP4216003 B2 JP 4216003B2
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film
semiconductor film
semiconductor
concentration
substrate
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Expired - Fee Related
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JP2002158582A
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Japanese (ja)
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JP2003173969A (ja
JP2003173969A5 (enrdf_load_stackoverflow
Inventor
充弘 一條
勇臣 浅見
規悦 鈴木
英人 大沼
雅人 米澤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002158582A priority Critical patent/JP4216003B2/ja
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Publication of JP2003173969A5 publication Critical patent/JP2003173969A5/ja
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Publication of JP4216003B2 publication Critical patent/JP4216003B2/ja
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  • Thin Film Transistor (AREA)
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JP2002158582A 2001-06-01 2002-05-31 半導体装置の作製方法 Expired - Fee Related JP4216003B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002158582A JP4216003B2 (ja) 2001-06-01 2002-05-31 半導体装置の作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2001-167330 2001-06-01
JP2001167330 2001-06-01
JP2001-209354 2001-07-10
JP2001209354 2001-07-10
JP2001295484 2001-09-27
JP2001-295484 2001-09-27
JP2002158582A JP4216003B2 (ja) 2001-06-01 2002-05-31 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008004408A Division JP5106136B2 (ja) 2001-06-01 2008-01-11 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003173969A JP2003173969A (ja) 2003-06-20
JP2003173969A5 JP2003173969A5 (enrdf_load_stackoverflow) 2005-09-22
JP4216003B2 true JP4216003B2 (ja) 2009-01-28

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JP2002158582A Expired - Fee Related JP4216003B2 (ja) 2001-06-01 2002-05-31 半導体装置の作製方法

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JP (1) JP4216003B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211214A (ja) * 2001-06-01 2011-10-20 Semiconductor Energy Lab Co Ltd 半導体膜の作製方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4761734B2 (ja) * 2003-08-15 2011-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5063867B2 (ja) * 2005-04-21 2012-10-31 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
TWI384295B (zh) * 2008-11-10 2013-02-01 Htc Corp 可攜式電子裝置及其光源之控制方法
KR101901361B1 (ko) 2011-12-02 2018-09-27 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법 및 이를 이용한 박막 트랜지스터의 형성방법
WO2018112463A1 (en) * 2016-12-16 2018-06-21 Applied Materials, Inc. Method to enable high temperature processing without chamber drifting

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211214A (ja) * 2001-06-01 2011-10-20 Semiconductor Energy Lab Co Ltd 半導体膜の作製方法

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JP2003173969A (ja) 2003-06-20

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