JP4199835B2 - 半導体発光素子及び半導体発光素子の製造方法 - Google Patents

半導体発光素子及び半導体発光素子の製造方法 Download PDF

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Publication number
JP4199835B2
JP4199835B2 JP28342496A JP28342496A JP4199835B2 JP 4199835 B2 JP4199835 B2 JP 4199835B2 JP 28342496 A JP28342496 A JP 28342496A JP 28342496 A JP28342496 A JP 28342496A JP 4199835 B2 JP4199835 B2 JP 4199835B2
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JP
Japan
Prior art keywords
layer
light emitting
semiconductor light
emitting device
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28342496A
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English (en)
Japanese (ja)
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JPH10126005A (ja
JPH10126005A5 (enExample
Inventor
俊一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP28342496A priority Critical patent/JP4199835B2/ja
Priority to US08/917,141 priority patent/US6233264B1/en
Publication of JPH10126005A publication Critical patent/JPH10126005A/ja
Priority to US09/688,875 priority patent/US6449299B1/en
Priority to US10/213,072 priority patent/US6879614B2/en
Publication of JPH10126005A5 publication Critical patent/JPH10126005A5/ja
Priority to US11/088,994 priority patent/US20050169334A1/en
Application granted granted Critical
Publication of JP4199835B2 publication Critical patent/JP4199835B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP28342496A 1996-08-27 1996-10-04 半導体発光素子及び半導体発光素子の製造方法 Expired - Fee Related JP4199835B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP28342496A JP4199835B2 (ja) 1996-08-28 1996-10-04 半導体発光素子及び半導体発光素子の製造方法
US08/917,141 US6233264B1 (en) 1996-08-27 1997-08-25 Optical semiconductor device having an active layer containing N
US09/688,875 US6449299B1 (en) 1996-08-27 2000-10-17 Optical semiconductor device having an active layer containing N
US10/213,072 US6879614B2 (en) 1996-08-27 2002-08-07 Optical semiconductor device having an active layer containing N
US11/088,994 US20050169334A1 (en) 1996-08-27 2005-03-24 Optical semiconductor device having an active layer containing N

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24559796 1996-08-28
JP8-245597 1996-08-28
JP28342496A JP4199835B2 (ja) 1996-08-28 1996-10-04 半導体発光素子及び半導体発光素子の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006101337A Division JP2006210945A (ja) 1996-08-28 2006-04-03 半導体発光素子及び半導体発光素子の製造方法
JP2007120596A Division JP4157903B2 (ja) 1996-08-28 2007-05-01 半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JPH10126005A JPH10126005A (ja) 1998-05-15
JPH10126005A5 JPH10126005A5 (enExample) 2004-10-14
JP4199835B2 true JP4199835B2 (ja) 2008-12-24

Family

ID=26537297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28342496A Expired - Fee Related JP4199835B2 (ja) 1996-08-27 1996-10-04 半導体発光素子及び半導体発光素子の製造方法

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JP (1) JP4199835B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207973B1 (en) 1998-08-19 2001-03-27 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures
US6657233B2 (en) 1998-08-19 2003-12-02 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device
JP2001339121A (ja) * 2000-05-29 2001-12-07 Sharp Corp 窒化物半導体発光素子とそれを含む光学装置
JP5008874B2 (ja) * 2005-02-23 2012-08-22 住友電気工業株式会社 受光素子と受光素子を用いた光通信用受信モジュールおよび受光素子を用いた計測器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2618677B2 (ja) * 1988-03-24 1997-06-11 三菱電線工業株式会社 半導体発光装置
JPH0637355A (ja) * 1992-07-20 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> Ｉｉｉ−ｖ族合金半導体およびその製造方法
JPH0878786A (ja) * 1994-09-02 1996-03-22 Mitsubishi Electric Corp 歪量子井戸の構造
JPH08195522A (ja) * 1994-11-16 1996-07-30 Hitachi Ltd 半導体レーザ
JP3091655B2 (ja) * 1994-12-22 2000-09-25 三洋電機株式会社 半導体レーザ素子
JPH09219563A (ja) * 1996-02-09 1997-08-19 Hitachi Ltd 半導体光素子とそれを用いた応用システム

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Publication number Publication date
JPH10126005A (ja) 1998-05-15

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