JP4192456B2 - Thin film forming method, thin film structure manufacturing apparatus, semiconductor device manufacturing method, and electro-optical device manufacturing method using the same - Google Patents

Thin film forming method, thin film structure manufacturing apparatus, semiconductor device manufacturing method, and electro-optical device manufacturing method using the same Download PDF

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JP4192456B2
JP4192456B2 JP2001324120A JP2001324120A JP4192456B2 JP 4192456 B2 JP4192456 B2 JP 4192456B2 JP 2001324120 A JP2001324120 A JP 2001324120A JP 2001324120 A JP2001324120 A JP 2001324120A JP 4192456 B2 JP4192456 B2 JP 4192456B2
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thin film
forming
film
coating liquid
coating
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JP2003126760A (en
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慎太郎 足助
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セイコーエプソン株式会社
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Abstract

PROBLEM TO BE SOLVED: To reduce manufacturing cost by decreasing the futile use of a coating liquid and to improve the in-plane uniformity of a thin film and the sharpness of contour in a method of forming the thin film by applying a coating liquid on a substrate. SOLUTION: The thin film forming method has a process for forming a bank part 21 on a contour part in a region where the thin film is formed on the substrate S by discharging a 1st coating liquid by ink-jet method and a process for discharging a 2n coating liquid containing film forming components which has nearly the same composition as the 1st coating liquid on a pond part 23 surrounded by the bank part 21 by the ink-jet method.

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of forming a thin film on a substrate using an ink jet method, a method of manufacturing a thin film structure using the same, a method of manufacturing a semiconductor device, and a method of manufacturing an electro-optical device.
[0002]
[Prior art]
Conventionally, a spin coating method known as a coating method for forming a thin film is a method of forming a thin film using centrifugal force by rotating a substrate after dropping a coating solution onto the substrate. This spin coating method is widely used as a method for forming a thin film on the entire surface of a substrate, for example, forming a photoresist layer used in a photolithography process.
[0003]
By the way, in the spin coating method, since most of the supplied coating solution is scattered, it is necessary to supply a large amount of coating solution, and there is a disadvantage that the coating solution is wasted and the production cost is increased. Further, since the substrate is rotated, the coating liquid flows from the inside to the outside by centrifugal force, and the film thickness in the outer peripheral region tends to be thicker than the inside, resulting in inconvenience that the film thickness becomes non-uniform. For these measures, in recent years, a method of applying a coating solution such as a photoresist using an inkjet apparatus has been proposed.
[0004]
[Problems to be solved by the invention]
The method of applying using an ink jet apparatus is a method of discharging the application liquid only to the region where the coating film is to be formed. Therefore, the application liquid is less wasted compared to the spin coating method. For example, FIG. As shown in FIG. 8, even if the coating solution is uniformly applied, a large bulge occurs in the edge portion 90 as shown in FIG. 8B in the process in which the coating film 91 is dried by natural drying or forced drying. There is a problem that the in-plane uniformity tends to be insufficient. This is because the edge portion 90 of the coating film 91 has a larger surface area than the inner region, so the force to shrink inward due to surface tension works more strongly, and the solvent vaporization from the outer peripheral portion is faster. This is because the concentration distribution is generated and the solute moves outward. In addition, there is a problem that the outline of the coating film 91 is likely to bleed.
[0005]
The present invention has been made in view of the above-described problems, and reduces the waste of the coating liquid to reduce the production cost, and also improves the in-plane uniformity of the thin film and the sharpness of the thin film. It is an object to provide a thin film forming method, a thin film structure manufacturing method, a semiconductor device manufacturing method, and an electro-optical device manufacturing method.
[0006]
[Means for Solving the Problems]
The present invention employs the following configuration in order to solve the above problems. That is, the thin film forming method of the present invention is a method of forming a thin film by applying a coating solution on a substrate, and the first thin film is formed on the contour portion of the region on the substrate by the inkjet method. A step of forming a bank part by discharging the coating liquid; and a second coating liquid containing a film constituent having substantially the same composition as the first coating liquid in a pond (recessed part) surrounded by the bank part Is characterized by having a step of discharging by an inkjet method.
[0007]
Since the thin film forming method of the present invention uses an ink jet method, a coating solution can be applied to a predetermined site with a predetermined coating amount. Therefore, the waste of the coating liquid is remarkably less than that of the spin coating method, and the production cost can be reduced.
Further, since the inkjet method can freely set the application region and the application order, first, the first coating liquid is discharged only on the contour portion of the region where the thin film is formed, and then the bank portion is formed. It is possible to form a coating film by discharging the second coating liquid into the pond inside the bank.
Since the first coating liquid and the second coating liquid contain film constituents having substantially the same composition, the bank part made of the first coating liquid and the coating film in the pond part made of the second coating liquid Are easily integrated, and a uniform coating film having no boundary as a whole is formed.
[0008]
Since the bank portion is provided only on the contour portion of the application region, the width thereof is relatively small. Therefore, the difference in surface tension between the edge portion and the other portion in the bank portion is suppressed to be small. For this reason, in the drying process, a difference in film thickness hardly occurs between the edge portion of the bank portion and other portions, and a bank portion having a good height (film thickness) uniformity can be obtained.
Further, the bank portion made of the first coating solution changes with time until the second coating solution is applied, and becomes semi-cured or cured when the second coating solution is applied. Yes. Therefore, the bank part which becomes the edge part of the whole thin film comprised by the bank part which consists of a 1st coating liquid and the coating film in the pond part which consists of a 2nd coating liquid dries and hardens the coating film in a pond part. In the meantime, the uniformity of the height (film thickness) is kept good. Moreover, since the surface state of the coating film in the pond is almost uniform, a difference in surface tension hardly occurs. Therefore, the coating film is prevented from partially rising in the process of drying the coating film in the pond, and a thin film having excellent in-plane uniformity as a whole can be obtained.
[0009]
In the thin film forming method of the present invention, it is preferable that the viscosity of the second coating solution is not more than the viscosity of the first coating solution.
In the thin film forming method of the present invention, the higher the viscosity of the first coating solution for forming the bank portion, the narrower the line width, and therefore, the bank portion where the film thickness non-uniformity hardly occurs can be formed. Moreover, it is preferable also when forming the height of a bank part high. In addition, it is preferable that the content of the solvent in the first coating liquid is small and the viscosity is high, because the bank portion becomes semi-cured or cured in a shorter time.
The second coating solution may have the same viscosity as the first coating solution, but since it is applied to a pond having a larger area than the bank portion, the lower viscosity tends to spread along the coated surface, and the coating solution It is preferable for improving the uniformity of the film. Also, when the viscosity is low, ejection failure in the ink jet apparatus is less likely to occur.
[0010]
In the thin film forming method of the present invention, before the first coating liquid is discharged and / or before the second coating liquid is discharged, surface modification is performed on the surface to be discharged on which the coating liquid is discharged. It is preferable to carry out the treatment.
By changing the wettability by surface modification treatment on the surface to be discharged, the contact angle of the coating liquid to the surface to be discharged can be controlled, so the shape, film thickness, and in-plane uniformity of the coating film Etc. can be controlled, and the contour of the coating film can be made clearer.
[0011]
In the thin film forming method of the present invention, before the first coating liquid is discharged, a first surface modification treatment for reducing wettability is performed on the surface to be discharged from which the first coating liquid is discharged. Preferably it is done.
According to this configuration, the contact angle of the first coating liquid with respect to the surface to be discharged is increased, and the discharged first coating liquid is difficult to spread along the surface to be discharged. Therefore, a bank portion with a narrow width can be formed, and the contour of the bank portion becomes clear and bleeding is prevented. Moreover, it is preferable also when forming the height of a bank part high. Furthermore, the rise of the outer wall of the bank portion becomes steep, and the uniformity of the height also becomes good at the edge portion.
[0012]
Further, in the thin film forming method of the present invention, before the second coating liquid is discharged, a second surface modification treatment for improving wettability with respect to the surface to be discharged from which the second coating liquid is discharged. It is preferable to carry out.
According to such a configuration, the contact angle of the second coating liquid with respect to the surface to be discharged is reduced, and the discharged second coating liquid is likely to spread along the surface to be discharged. The in-plane uniformity of the coating film in the pond portion can be improved.
[0013]
In the thin film forming method of the present invention, it is preferable that a line width of the bank portion is 500 μm or less.
If the line width of the bank portion is 500 μm or less, the difference in surface tension between the edge portion and other portions in the bank portion is sufficiently small, so that the difference in film thickness hardly occurs during the drying process, and the height is uniform. A good bank can be obtained.
[0014]
In the thin film forming method of the present invention, a photoresist solution can be preferably applied as the first coating solution and the second coating solution.
Thereby, a photoresist layer with excellent in-plane uniformity can be formed, and high exposure accuracy can be obtained. Further, since the waste of the photoresist solution having a relatively high unit price is small, the production cost can be reduced.
Specifically, the thin film formation method of the present invention can be preferably applied to a photolithography process in a semiconductor device manufacturing process and a photolithography process in an electro-optical device manufacturing process.
[0015]
Further, the thin film forming method of the present invention can be applied to the formation of a thin film in various fields.
The method for producing a thin film structure of the present invention is a method for producing a thin film structure in which a thin film is formed on a substrate, wherein the thin film is formed by the thin film formation method of the present invention.
According to this method, a thin film structure including a thin film with excellent in-plane uniformity can be obtained, and the waste of the coating liquid for forming the thin film can be reduced to reduce the production cost.
Specifically, a step of forming an interlayer insulating film in the manufacturing process of the semiconductor device and the manufacturing process of the electro-optical device, a step of forming a conductive layer for wiring formation in the manufacturing process of the semiconductor device and the manufacturing process of the electro-optical device The thin film forming step of the present invention can be preferably applied to the step of forming the transparent conductive film in the manufacturing process of the electro-optical device.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
A first embodiment according to the present invention will be described below.
FIG. 1 shows an example of a manufacturing process of a silicon gate CMOS device as an example of a manufacturing method of a semiconductor device in order of processes.
The manufacturing process of this example will be described briefly. First, as shown in FIG. 1A, the surface of the n-type substrate 1 is oxidized to form an oxide film 2 on the entire surface of the substrate, Through the photolithography process, an opening 2 a for forming a p-well is formed in the oxide film 2. Then, boron ions are implanted through the opening 2a to form the p well 3, and then the oxide film 2 is removed.
Next, as shown in FIG. 1B, after the silicon oxide film 4 and the silicon nitride film 5 are formed in order, the silicon oxide film 4 and the silicon nitride film 5 are patterned through a second photolithography process. Then, a field region forming pattern 6 is formed.
[0017]
Next, as shown in FIG. 1C, after a photoresist layer 7 is formed on the entire surface, this photoresist layer 7 is patterned through a third photolithography step to form a p-channel cover pattern (resist pattern). ) 7a is formed. Then, after boron ion implantation is performed to form a channel stopper, the resist pattern 7a is removed.
Next, as shown in FIG. 1D, after the field oxide film 8 is formed, the silicon oxide film 4 and the silicon nitride film 5 are removed.
Next, as shown in FIG. 1 (e), after forming the gate oxide film 9, a photoresist layer 10 is formed on the entire surface, and this photoresist layer 10 is patterned through a fourth photolithography process. Then, a Vth control pattern (resist pattern) 10a is formed. Then, after boron ions are implanted to form a Vth control, the resist pattern 10a is removed.
Thereafter, as shown in FIG. 1F, a polysilicon layer 11 is formed on the entire surface, followed by phosphorous diffusion on the entire surface, and then, through a fifth photolithography step, the polysilicon layer 11 is patterned. .
[0018]
Next, as shown in FIG. 1G, a photoresist layer 12 is formed on the entire surface, and after passing through a sixth photolithography process, the photoresist layer 12 is patterned, thereby opening an n-channel source / drain opening. A resist pattern 12a is formed so as to cover the other region. Then, after arsenic ion implantation is performed to form the n-channel source / drain 13, the resist pattern 12a is removed.
Next, as shown in FIG. 1 (h), a photoresist layer 14 is formed on the entire surface, and the photoresist layer 14 is patterned through a seventh photolithography step, whereby a p-channel source / drain opening is formed. A resist pattern 14a is formed so as to cover the other region. Then, boron ion implantation is performed. Thereby, as shown in FIG. 1I, a p-channel source / drain 15 is formed, and thereafter the resist pattern 14a is removed.
Next, as shown in FIG. 1 (j), an interlayer insulating film 16 is formed on the entire surface, and after reflowing, the interlayer insulating film 16 is patterned through an eighth photolithography step, thereby forming a p-contact opening. Form.
Next, as shown in FIG. 1 (k), after the conductive layer 17 is formed on the entire surface, the conductive layer 17 is patterned through a ninth photolithography step to form the wiring 17a.
Thereafter, although not shown, after forming a passivation film on the entire surface, a bonding opening is formed in the passivation film through a tenth photolithography step.
[0019]
FIG. 2 is an explanatory view schematically showing a process of forming resist patterns 7a, 10a, 12a, and 14a. In the present embodiment, the steps of forming the photoresist layers 7, 10, 12, and 14 are performed using the thin film forming method of the present invention.
In order to form the resist patterns 7a, 10a, 12a, and 14a, first, as shown in FIG. 2, an ink jet method is performed on almost the entire surface of the substrate S (hereinafter also simply referred to as the substrate S) that has undergone the previous process. The photoresist layer 7 (10, 12, 14) is formed by applying a photoresist solution by the thin film forming method of the present invention and then baking to cure the coating film. The photoresist layer 7 (10, 12, 14) is exposed through a photomask having a light-shielding portion having a predetermined shape, and then developed to develop a resist pattern 7a (10a, 12a, 14a) is obtained.
[0020]
FIG. 3 is a schematic perspective view showing an example of an ink jet apparatus suitably used for applying a photoresist solution.
The apparatus 100 in this example includes an inkjet head group 101, an X direction drive shaft 104, a Y direction guide shaft 105, a control device 106, a mounting table 107, a cleaning mechanism unit 108, and a base 109.
The mounting table 107 is configured to be movable on the Y-direction guide shaft 105 and includes a mechanism for fixing the substrate S to which the liquid material is applied to a reference position.
The inkjet head group 101 is provided with a plurality of inkjet heads provided with nozzles (ejection ports) for ejecting a liquid material toward the substrate S on the mounting table 107. In the present embodiment, a plurality of inkjet heads are provided, but only one inkjet head may be provided.
[0021]
An X direction drive motor 102 is connected to the X direction drive shaft 104. The X direction drive motor 102 is a stepping motor or the like, and rotates the X direction drive shaft 104 when a drive signal in the X axis direction is supplied from the control device 106. When the X-direction drive shaft 104 rotates, the inkjet head group 101 moves in the X-axis direction.
The Y direction guide shaft 105 is fixed so as not to move with respect to the base 109, and the mounting table 107 on the Y direction guide shaft 105 is connected to the Y direction drive motor 103. The Y-direction drive motor 103 is a stepping motor or the like, and moves the mounting table 107 in the Y-axis direction when a drive signal in the Y-axis direction is supplied from the control device 106.
The control device 106 supplies a voltage for controlling the ejection of ink droplets to each inkjet head provided in the inkjet head group 101. In addition, a drive pulse signal (drive signal in the X-axis direction) for controlling the movement of the inkjet head group 101 in the X-axis direction is supplied to the X-direction drive motor 102, and the Y-direction drive motor 103 is also supplied. A drive pulse signal (a drive signal in the Y-axis direction) for controlling the movement of the mounting table 107 in the Y-axis direction is supplied.
[0022]
The cleaning mechanism unit 108 includes a mechanism for cleaning the inkjet head group 101. The cleaning mechanism unit 108 is connected to a drive motor (not shown), and is configured to move along the Y-direction guide shaft 105 by driving the drive motor. The movement of the cleaning mechanism unit 108 is also controlled by the control device 106.
[0023]
A process of applying a photoresist solution using the inkjet apparatus 100 having such a configuration will be described.
First, as shown in FIG. 4A, the bank portion 21 is formed by discharging a first photoresist solution (coating solution) to the substrate S that has been subjected to the previous process by the inkjet apparatus 100. If necessary, it is preferable to perform the first surface modification treatment before that.
[0024]
As the first surface modification treatment, the wettability of the surface to be discharged from which the first photoresist liquid is discharged is lowered, and the contact angle of the first photoresist liquid to the surface to be discharged is increased. Process. Specific methods include a method of irradiating ultraviolet rays having a wavelength of about 170 to 400 nm, a method of exposing in an ozone atmosphere, a method of performing vacuum plasma irradiation using various gases as appropriate, and atmospheric pressure (atmospheric pressure) using various gases as appropriate. ) Plasma irradiation method such as HMDS treatment ((CH Three ) Three SiNHSi (CH Three ) Three Or a method using a coupling agent, such as exposure to an ozone atmosphere while irradiating ultraviolet rays, or the like. In these surface modification treatment methods, which wettability changes occur depending on which treatment method, the physical properties of the surface to be ejected to be treated, the physical properties of the first photoresist liquid ejected here, Therefore, an appropriate method is selected according to the state of the surface to be ejected and the composition of the first photoresist solution.
[0025]
The first surface modification treatment may be performed on at least a portion of the surface of the substrate S that has been subjected to the previous process, to which the first photoresist solution is discharged, but may be performed on the entire surface of the substrate S. .
In addition, since the wettability of the surface to be ejected subjected to the first surface modification treatment can change over time, the first surface modification treatment is performed immediately before the first photoresist solution is ejected. Is preferred.
Here, as shown in FIG. 5, the contact angle of the photoresist liquid (liquid) with respect to the surface to be ejected (solid) is the tangent of the liquid surface and the solid surface at the point where the solid, liquid and vapor come into contact with each other. This is the angle θ formed by.
[0026]
The first photoresist solution is obtained by diluting a resist material (film constituent component) made of a photosensitive resin with an appropriate solvent. A higher viscosity of the first photoresist solution is preferable for forming a bank portion having a narrow width and therefore non-uniform film thickness. However, when the viscosity is too high, ejection failure from the inkjet device occurs. It becomes easy. Therefore, the viscosity of the first photoresist solution is preferably 20 cp or less, more preferably about 12 cp to 8 cp.
The first photoresist liquid preferably has a short time until it is left in a semi-cured state or a cured state. Therefore, it is preferable to reduce the blending ratio of the solvent or use a quick-drying solvent. Alternatively, the speed at which the solvent volatilizes can also be controlled by changing the atmospheric composition.
[0027]
In the present embodiment, as shown in FIG. 4A, the first photoresist solution is discharged along the outer periphery of the substrate S so as to draw a substantially ring shape with a slight margin 22 left on the outer periphery. Is done. That is, in this embodiment, the region where the photoresist layer 7 (10, 12, 14) is formed is a region on the substrate S excluding the marginal portion 22 at the outer peripheral portion. Therefore, the first photoresist solution is applied in a substantially annular shape on the contour of the region where the photoresist layer 7 (10, 12, 14) is formed. Here, the contour portion refers to a region including a belt-like portion on the contour line and inside the contour line.
Thus, by providing the blank portion 22 on the outer peripheral portion of the substrate S, it is possible to prevent the first photoresist liquid discharged on the surface of the substrate S from adhering to the back side of the substrate S. The subsequent cleaning operation can be simplified.
[0028]
If the line width W (width immediately after application) of the substantially annular bank portion 21 formed by the first photoresist solution is too large, the film thickness is caused by the difference in surface tension in the line width direction of the bank portion 21. Since unevenness is likely to occur, the thickness is preferably 500 μm or less. On the other hand, if the line width W is too small, coating by the ink jet method becomes difficult, so the line width W of the bank portion 21 is preferably 80 μm or more.
Further, the height of the bank portion 21 (the height immediately after application) is the thickness after the baking of the photoresist layer 7 (10, 12, 14) to be formed on the substrate S after the baking process. Are set equal to each other.
For example, the thickness of the photoresist layer 7 (10, 12, 14) after curing depends on the degree of shrinkage of the bank 21 between the time of application and after baking, depending on the composition of the first photoresist solution. Is set to 1 μm, the height of the bank portion 21 at the time of application is preferably about 2 to 4 μm.
In addition, in order to form the bank portion 21 at a desired height, the first photoresist solution may be discharged to the same portion a plurality of times to perform overcoating.
[0029]
After the bank portion 21 is formed in this way, as shown in FIG. 4B, the second photoresist solution (coating solution) is discharged into the pond portion 23 surrounded by the bank portion 21 by the inkjet device 100. To do. Moreover, it is preferable to perform a 2nd surface modification process before that as needed.
[0030]
As the second surface modification treatment, the wettability of the surface to which the second photoresist liquid is discharged is improved, and the contact angle of the second photoresist liquid to the surface to be discharged is reduced. Process. Here, the surface subjected to the second surface modification treatment preferably includes at least the bottom surface of the pond portion 23 surrounded by the bank portion 21, the inner wall 21 a of the bank portion 21, and the upper surface 21 b of the bank portion 21.
As a specific method of the second surface modification treatment, a method similar to the method of the first surface modification treatment can be used. In these surface modification treatment methods, which wettability changes occur depending on which treatment method, the physical properties of the surface to be ejected to be treated, the physical properties of the second photoresist liquid ejected here, Therefore, an appropriate method is selected according to the state of the surface to be ejected and the composition of the second photoresist solution.
In addition, since the wettability of the surface to be ejected subjected to the second surface modification treatment may change over time, the second surface modification treatment is performed immediately before the second photoresist solution is ejected. Is preferred.
[0031]
In the second photoresist liquid, the film constituents excluding the solvent have substantially the same composition as the film constituents in the first photoresist liquid, and the coating films made of the two photoresist liquids are not separated from each other easily. It is prepared so that it may be integrated. Specifically, a second photoresist solution can be obtained by diluting a resist material (film constituent component) made of the same photosensitive resin as the first photoresist solution with an appropriate solvent. The viscosity of the second photoresist solution may be the same as that of the first photoresist solution, but the lower viscosity tends to spread along the bottom surface of the pond portion 23 after discharge, so that the coating film is easily flattened and applied. Unevenness is unlikely to occur, which is preferable for improving the uniformity of the coating film. In addition, it is preferable that the viscosity of the second photoresist solution is low because ejection defects in the ink jet apparatus are less likely to occur. However, as the blending amount of the solvent increases, the viscosity decreases, but the shrinkage of the film before and after baking increases, and the time required for baking also increases. Therefore, the viscosity of the second photoresist solution is preferably about 8 cp to 2 c, and more preferably about 5 cp to 3 cp.
[0032]
In the present embodiment, the application of the second photoresist liquid can be performed using an ink jet apparatus having the same configuration as that of the ink jet apparatus 100 used for the application of the first photoresist liquid.
The second photoresist solution is discharged so as to fill the entire pond portion 23. Further, since the coating film shrinks when the solvent is removed through the baking process, as shown in FIG. 4B, immediately after the application of the second photoresist solution, It is preferable to apply so that the central portion of the pond portion 23 is thicker than the outer peripheral portion so as to have the same thickness. The height of the coating film at the center of the pond portion 23 (the height immediately after application) is the shrinkage of the bank portion 21 and the coating in the pond portion 23 between the time when the second photoresist solution is applied and the time after baking. In consideration of the contraction of the film, it is preferable that the bank portion 21 and the coating film in the pond portion 23 are set so as to form a layer having a uniform thickness after baking. For example, when the height of the photoresist layer 7 (10, 12, 14) after baking is set to 1 μm, the height of the coating film at the center of the pond portion 23 (the height immediately after application) is about 2 to 4 μm. It is preferable that
Moreover, in order to form the coating film in the pond portion 23 at a desired height, the second photoresist liquid may be discharged to the same portion a plurality of times and overcoated.
[0033]
In addition, when the second photoresist solution is applied in the pond portion 23 by the ink jet method, it is preferable to start application from the center of the pond portion 23 and sequentially apply outward. In this way, after the bank portion 21 is formed, the time until the second photoresist solution comes into contact with the bank portion 21 becomes longer, and until the second photoresist solution comes into contact, This is preferable because the bank portion 21 is further cured.
[0034]
Thus, after apply | coating a 2nd photoresist liquid in the pond part 23 enclosed by the bank part 21, the solvent is removed and the coating film hardens | cures by baking by a suitable method, and board | substrate S A photoresist layer 7 (10, 12, 14) is formed on almost the entire surface.
The first photoresist solution that forms the bank portion 21 and the second photoresist solution that forms the coating film in the pond portion 23 are made of a resist material (film constituent component) having substantially the same composition. The part 21 and the coating film in the pond part 23 are integrated to form a uniform photoresist layer 7 (10, 12, 14) having no boundary.
The photoresist layer 7 is formed by forming a coating film in the pond portion 23 in a state where the bank portion 21 is semi-cured or cured, and the both are integrated. It is a thin film with good in-plane thickness uniformity.
[0035]
According to the present embodiment, the photoresist layer 7 (10, 12, 14) having excellent in-plane uniformity is formed on almost the entire surface of the substrate S in the photolithography process in the manufacturing process of the semiconductor device. As shown in FIG. 2, this photoresist layer 7 (10, 12, 14) is exposed in the next step. However, since the in-plane uniformity is excellent, high exposure accuracy is obtained. Therefore, the shape accuracy of the resist pattern 7a (10a, 12a, 14a) obtained by developing after this exposure is high, and the shape accuracy of the semiconductor device can be improved.
Although the photoresist solution is relatively expensive, it is applied using an ink jet method, so that waste of the photoresist solution can be reduced. For example, in general, the application efficiency of the coating liquid when applying by spin coating is about 5% and about 95% is wasted, whereas in this embodiment, the usage efficiency of the photoresist liquid is used. Is remarkably high at about 80 to 90%, and can greatly reduce the production cost.
[0036]
Moreover, in this embodiment, the 1st photolithography process which patterns the oxide film 2 can be performed using the thin film formation method of this invention.
FIG. 6 is an explanatory view schematically showing a first photolithography process for patterning the oxide film 2.
That is, first, a photoresist solution (coating solution) is applied by an ink jet method on the substantially entire surface of the substrate S on which the pre-process has been completed, that is, the substrate S on which the oxide film 2 is formed. The step of applying the photoresist solution is performed by a method of forming a coating film in the pond portion 23 surrounded by the bank portion 21 after forming the bank portion 21 in the same manner as described above.
Then, after baking and curing the coating film, a photoresist layer (not shown) is formed, and the photoresist layer is exposed through a photomask having a light-shielding portion having a predetermined shape. The resist pattern having a predetermined shape is obtained by development. Up to this point, the same procedure as that for forming the resist pattern 7a (10a, 12a, 14a) can be performed.
After that, after etching the lower layer of the resist pattern, that is, the oxide film 2, using the cured resist pattern as an etching mask, the resist pattern is removed. As a result, a patterned oxide film 2 is obtained.
[0037]
If such a method is used, a photoresist layer having excellent in-plane uniformity can be formed on almost the entire surface of the substrate S in the first photolithography process for patterning the oxide film 2, and a high exposure is obtained when this is exposed. Accuracy is obtained. Therefore, the shape accuracy of the resist pattern obtained by developing after exposure is high, and good etching accuracy can be obtained when the oxide film 2 is etched using this resist pattern as an etching mask.
Further, waste of a relatively expensive photoresist solution can be reduced, which can contribute to a reduction in production cost.
[0038]
In this embodiment, not only the first photolithography process for patterning the oxide film 2 but also the second photolithography process for patterning the silicon oxide film 4 and the silicon nitride film 5, the polysilicon layer 11 is patterned. The same applies to the fifth photolithography process, the eighth photolithography process for patterning the interlayer insulating film 16, the ninth photolithography process for patterning the Al sputter layer 17, and the tenth photolithography process for patterning the passivation film. In addition, the procedure shown in FIG. 6 can be used to form the photoresist layer by using the thin film forming method of the present invention, and the same effect can be obtained.
[0039]
Further, in the present embodiment, the step of forming the interlayer insulating film 16 on almost the entire surface of the substrate S after the previous step can be performed by the thin film forming method of the present invention.
That is, as a material for forming the interlayer insulating film 16, a liquid material such as a coating-type interlayer insulating film liquid material or a porous interlayer insulating film liquid material is used, and a photoresist liquid is applied using the ink jet apparatus 100 described above. Similarly to the above, after the bank portion 21 is formed, the interlayer insulating film 16 can be formed by a method of forming a coating film in the pond portion 23 surrounded by the bank portion 21.
[0040]
By using this method, the interlayer insulating film 16 having excellent in-plane uniformity can be formed on almost the entire surface of the substrate S, and the waste of the liquid material can be reduced, thereby contributing to the reduction of the production cost. .
[0041]
In the present embodiment, the step of forming the conductive layer 17 on almost the entire surface of the substrate S after the previous step can be performed by the thin film formation method of the present invention.
That is, as a material for forming the conductive layer 17, for example, a liquid material for forming an ITO film is used, and the bank portion 21 is formed after the bank portion 21 is formed in the same manner as the method of applying the photoresist liquid using the inkjet device 100 described above. The conductive layer 17 can be formed by a method of forming a coating film in the pond portion 23 surrounded by the bank portion 21.
Then, the conductive layer 17 is patterned by a ninth photolithography process to form a wiring 17a.
[0042]
By using this method, the conductive layer 17 having excellent in-plane uniformity can be formed on almost the entire surface of the substrate S, and the wiring 17a having excellent in-plane uniformity can be obtained. Further, since the waste of the liquid material is small, it can contribute to the reduction of the production cost.
[0043]
In this embodiment, an example of a manufacturing process of a silicon gate CMOS device has been described as an example of a manufacturing method of a semiconductor device. However, the present invention is not limited to this example. For example, a manufacturing process of a silicon gate nMOS device or a pn junction is used. Similarly, in the manufacturing process of the separated bipolar device, formation of a photoresist layer, formation of an interlayer insulating film, and formation of a conductive layer can be performed using the thin film formation method of the present invention.
[0044]
Next, a method for manufacturing an electro-optical device will be described as a second embodiment according to the invention.
FIG. 7 shows an example of a manufacturing process of the TFT array substrate 51 in which a TFT (Thin Film Transistor) is formed on a glass substrate in the order of the processes.
The TFT substrate 51 of this embodiment is used as a component of various electro-optical devices such as a liquid crystal display device, an organic EL display, and a field emission display as a transparent substrate having a switching element.
[0045]
Reference numeral 31 in the figure indicates a glass substrate. The manufacturing process of this example will be briefly described. First, a polishing process 32 and then an initial cleaning process 33 are performed on the glass substrate 31, and then a first ITO (indium tin oxide) film forming process is performed. 34. Then, the first ITO film is patterned by the first photolithography process 35.
Next, after performing an interlayer insulating film forming step 36 and subsequently performing a gate film forming step 37, the gate film is patterned by a second photolithography step 38.
Next, after the second ITO film forming step 39 is performed, the second ITO film is patterned by a third photolithography step 40.
[0046]
Next, after performing a gate insulating film forming step 41, the gate insulating film is patterned by a fourth photolithography step.
Next, after an i-type amorphous-silicon film (ia-Si film) forming step 43 is performed, the ia-Si film is patterned by a fifth photolithography step 44.
Next, after performing an etching stopper film forming step 45, the etching stopper film is patterned by a sixth photolithography step 46.
Then n + Amorphous silicon film (n + a-Si film) forming step 47, and then the seventh photolithography step 48 is followed by n + The a-Si film is patterned.
Next, after performing the source / drain electrode layer forming step 49, the source / drain electrode layer is patterned by the eighth photolithography step 50, and the TFT array substrate (reverse stagger type) 51 is obtained.
[0047]
In the present embodiment, the step of patterning the first ITO film by the first photolithography step 35 is performed by using the thin film forming method of the present invention for forming the photoresist layer in the procedure shown in FIG.
That is, first, a photoresist solution is applied to almost the entire surface of the substrate S after the first ITO film forming step 34 by an inkjet method. In the step of applying the photoresist solution, the bank portion 21 is first formed with the first photoresist solution, and then the second photoresist solution is placed in the pond portion 23 surrounded by the bank portion 21 in the same manner as described above. In the method of forming a coating film.
Then, a photoresist layer is formed by baking and curing the coating film, and the photoresist layer is exposed through a photomask having a light-shielding portion having a predetermined shape, and then developed. A resist pattern having a predetermined shape is obtained.
Thereafter, the first ITO film is etched using the cured resist pattern as an etching mask, and then the resist pattern is removed. As a result, a patterned ITO film is obtained.
[0048]
In the present embodiment, not only the first photolithography process 35 but also the second to eighth photolithography processes 38, 40, 42, 44, 46, 48, and 50 are similarly described with reference to FIG. According to the procedure shown in FIG. 4, the photoresist layer is formed using the thin film forming method of the present invention.
[0049]
According to this embodiment, in the first to eighth photolithography processes 35, 38, 40, 42, 44, 46, 48, 50, the photoresist layer having excellent in-plane uniformity over almost the entire surface of the substrate S. When this is exposed, high exposure accuracy can be obtained. Therefore, the shape accuracy of the resist pattern obtained by developing after exposure is high, and good etching accuracy can be obtained by etching using this resist pattern as an etching mask.
Further, waste of a relatively expensive photoresist solution can be reduced, which can contribute to a reduction in production cost.
[0050]
In this embodiment, an example of the manufacturing process of the TFT substrate constituting the electro-optical device has been described. However, the present invention is not limited to this, and in various electro-optical device manufacturing methods, a photoresist solution is used to perform the photolithography process. When applying, the thin film forming method of the present invention can be used in the same manner, whereby a waste of the photoresist liquid can be reduced and a photoresist layer with good in-plane uniformity can be obtained.
For example, it is preferable to use the thin film formation method of the present invention when applying a photoresist solution in a photolithography process for forming electrodes of a simple matrix liquid crystal display device or a segment type liquid crystal display device.
[0051]
Moreover, the thin film formation method of the present invention can be used not only in the photolithography process but also in various thin film formation processes using a liquid material.
For example, in an electro-optical device such as a liquid crystal display device, a step of forming a transparent conductive film using a liquid material, a step of forming an interlayer insulating film, a step of forming a conductive layer, a step of forming an alignment film, a planarizing film The method for forming a thin film of the present invention can be used for the step of forming, the step of forming a protective film, and the like.
[0052]
In addition, since the thin film forming method of the present invention is applied by inkjet, it is not always necessary to apply the entire surface of the substrate, and a thin film having an arbitrary planar shape can be formed. Therefore, the present invention can be used not only for forming a thin film on almost the entire surface of the substrate but also for forming a thin film having an arbitrary shape.
[0053]
【The invention's effect】
As described above in detail, in the thin film forming method of the present invention, first, the first coating liquid is ejected onto the contour portion of the region on the substrate where the thin film is to be formed by the ink jet method, so that the width is relatively narrow. Since the bank portion is formed, it is possible to form a bank portion having good surface state uniformity and a clear outline.
And in the pond part surrounded by this bank part, since the 2nd coating liquid is discharged by the inkjet method and a coating film is formed, the surface state in the coating film in a pond part becomes substantially uniform, and the difference in surface tension It is difficult for climax caused by In addition, since the first coating liquid and the second coating liquid contain film constituents having substantially the same composition, after curing, a thin film having both a unified and excellent in-plane uniformity and a sharp outline is obtained. can get.
In addition, since the ink jet method is used, the coating liquid can be applied to a predetermined part with a predetermined coating amount, and therefore, the waste of the coating liquid is much less than that of the spin coating method, and the production cost can be reduced. Can do.
[0054]
The method for producing a thin film structure of the present invention is a method for producing a thin film structure in which a thin film is formed on a substrate, wherein the thin film is formed by the thin film formation method of the present invention. Therefore, it is possible to obtain a thin film structure including a thin film with excellent in-plane uniformity, and to reduce the waste of the coating liquid for forming the thin film, thereby contributing to the reduction of production costs.
[0055]
A method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device provided with an interlayer insulating film, wherein the interlayer insulating film is formed by the thin film forming method of the present invention. Therefore, it is possible to obtain a semiconductor device provided with an interlayer insulating film having excellent in-plane uniformity, and to reduce the waste of the coating liquid for forming the interlayer insulating film, thereby contributing to the reduction of production costs.
The method for manufacturing a semiconductor device of the present invention is a method for manufacturing a semiconductor device provided with a wiring formed by patterning a conductive layer, the step of forming the conductive layer by the thin film forming method of the present invention, It has the process of patterning a layer, It is characterized by the above-mentioned. Therefore, a semiconductor device having wiring with excellent in-plane uniformity can be obtained, and waste of the coating liquid for forming the conductive film can be reduced, thereby contributing to reduction in production cost.
Moreover, the manufacturing method of the semiconductor device of this invention is a manufacturing method of the semiconductor device including a photolithography process, Comprising: This photolithography process includes the process of forming a photoresist layer with the thin film formation method of this invention. Features. Therefore, a photoresist layer having excellent in-plane uniformity can be formed, and high exposure accuracy can be obtained. In addition, it is possible to contribute to the reduction of production cost by reducing the waste of the photoresist solution, which is a relatively high unit price.
[0056]
The electro-optical device manufacturing method of the present invention is a method of manufacturing an electro-optical device having a transparent conductive film on a substrate, wherein the transparent conductive film is formed by the thin film forming method of the present invention. Accordingly, an electro-optical device having a transparent conductive film with excellent in-plane uniformity can be obtained, and the waste of the coating liquid for forming the transparent conductive film can be reduced, thereby contributing to the reduction of production costs. .
The method of manufacturing an electro-optical device according to the present invention is a method of manufacturing an electro-optical device including a photolithography process, and the photolithography process includes a step of forming a photoresist layer by the thin film forming method according to claim 7. It is characterized by including. Therefore, a photoresist layer having excellent in-plane uniformity can be formed, and high exposure accuracy can be obtained. In addition, it is possible to contribute to the reduction of production cost by reducing the waste of the photoresist solution, which is a relatively high unit price.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating an example of a manufacturing process of a semiconductor device in order of processes according to a first embodiment of the present invention.
FIG. 2 is a diagram illustrating an example of a process of forming a resist pattern in the order of processes in the first embodiment according to the present invention.
FIG. 3 is a schematic perspective view showing an example of an ink jet head suitably used in the present invention.
4A and 4B show a resist layer forming step in the first embodiment of the present invention, wherein FIG. 4A is a plan view showing a bank portion forming step, and FIG. 4B is a coating film formed in a pond portion; It is sectional drawing which shows a process.
FIG. 5 is a diagram for explaining a contact angle.
6 is a diagram showing an example of a photolithography process in the first embodiment according to the present invention in order of processes. FIG.
FIGS. 7A and 7B are diagrams illustrating an example of a manufacturing process of a TFT substrate constituting an electro-optical device according to the second embodiment of the invention. FIGS.
8A and 8B show an example of a conventional thin film forming method, in which FIG. 8A is a cross-sectional view of a thin film before drying, and FIG. 8B is a cross-sectional view of a thin film after drying.
[Explanation of symbols]
7, 10, 12, 14 Photoresist layer
16 Interlayer insulation film
17 Conductive layer
17a Wiring
21 Bank
23 Ikebe
51 TFT array substrate
S substrate (substrate after the previous process)
100 Inkjet device

Claims (14)

  1. A method of forming a thin film by applying a coating solution on a substrate,
    Forming a bank portion by discharging a first coating liquid by an ink jet method on a contour portion of the region on the substrate where the thin film is formed;
    The pond part surrounded by the bank part in a semi-cured or cured state contains a film constituent having substantially the same composition as the first coating liquid, and has a second viscosity lower than the viscosity of the first coating liquid . A method of forming a thin film, comprising a step of discharging a coating liquid by an ink jet method.
  2. Before discharging the first coating liquid and / or before discharging the second coating liquid, surface modification treatment is performed on the surface to be discharged from which the coating liquid is discharged. The thin film forming method according to claim 1 .
  3. The first surface modification treatment for reducing wettability is performed on the surface to be discharged from which the first coating liquid is discharged before the first coating liquid is discharged. 3. The thin film formation method according to 2.
  4. Claims prior to discharging the second coating solution, with respect to the ejection surface of the coating liquid of the second is discharged, and performs the second surface modification treatment for improving the wettability 4. The method for forming a thin film according to either 2 or 3 .
  5. Thin film forming method according to any one of claims 1 to 4, wherein the line width of the bank portion is 500μm or less.
  6. Said first coating liquid and second coating liquid, a thin film forming method according to any one of claims 1 to 5, characterized in that a photo-resist liquid.
  7. A method of manufacturing a thin film structure in which a thin film is formed on the substrate, a manufacturing method of the thin film structure, and forming the thin film by the thin film forming method according to any one of claims 1-5.
  8. A method of manufacturing a semiconductor device having an interlayer insulating film, a method of manufacturing a semiconductor device, which comprises forming the interlayer insulating film by a thin film forming method according to any one of claims 1-5.
  9. A method of manufacturing a semiconductor device having a patterned formed by wiring a conductive layer, patterning and forming the conductive layer by a thin film forming method according to any one of claims 1 to 5 and the conductive layer A method for manufacturing a semiconductor device, comprising: a step.
  10. A method of manufacturing a semiconductor device including a photolithography process, wherein the photolithography process includes a step of forming a photoresist layer by the thin film forming method according to claim 6 .
  11. A method of manufacturing an electro-optical device having a transparent conductive film on a substrate, the electro-optical device, which comprises forming the transparent conductive film by a thin film forming method according to any one of claims 1 to 5 Production method.
  12. A method of manufacturing an electro-optical device including an interlayer insulating film, a method of manufacturing an electro-optical device, which comprises forming the interlayer insulating film by a thin film forming method according to any one of claims 1-5.
  13. A method of manufacturing an electro-optical device having a patterned formed by wiring a conductive layer, patterning and forming the conductive layer by a thin film forming method according to any one of claims 1 to 5 and the conductive layer And a method of manufacturing an electro-optical device.
  14. An electro-optical device manufacturing method including a photolithography step, wherein the photolithography step includes a step of forming a photoresist layer by the thin film forming method according to claim 6. .
JP2001324120A 2001-10-22 2001-10-22 Thin film forming method, thin film structure manufacturing apparatus, semiconductor device manufacturing method, and electro-optical device manufacturing method using the same Expired - Fee Related JP4192456B2 (en)

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