JP2009049339A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To uniformly form a thick coating film on a substrate. <P>SOLUTION: A semiconductor wafer 10 is prepared, and a mound 21 is formed with a high-viscosity material on an outer edge part of one-side surface to form a coating film thereon out of both surfaces of the semiconductor wafer 10. The semiconductor wafer 10 is horizontally arranged, a coating appliance 40 is arranged on the one-side surface side with the mound 21 formed thereon within the semiconductor wafer 10, and a low-viscosity material 31 is poured onto the one-side surface of the semiconductor wafer 10 from the coating appliance 40. Thereby, since the low-viscosity material 31 is accumulated in a region surrounded by the mound 21, the low-viscosity material 31 is poured onto the semiconductor wafer 10 to be set at a certain thickness. Thus, the thick and uniform coating film 50 is formed on the semiconductor wafer 10. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device in which a coating film is formed on a semiconductor wafer.

  Conventionally, a substrate is placed on a spin coater disk, a liquid coating material is placed on the center of the substrate, the spin coater disk is rotated, and centrifugal force is used to uniformly apply the coating material on the substrate. The spin coating method of coating by the method is widely known. Such a technique is used, for example, when a protective film such as PIQ (polyimide) is formed on a semiconductor wafer in the final step of device formation in a semiconductor process. In this case, it is desired to form the PIQ thick.

  In general, when a thick coating film is formed on a semiconductor wafer or the like with a resin material, either by increasing the viscosity of the coating material or by lowering the spin coater disk rotation speed under normal coating conditions. Or you need to do both. By adopting these methods, it is considered that the PIQ can be formed thick and uniform. However, the inventors have found that it is difficult for such a method to form a uniform thick protective film on a semiconductor wafer.

  As described above, after placing the semiconductor wafer on the disk of the spin coater and placing the high viscosity coating material on the semiconductor wafer, the disk is rotated. However, the high-viscosity coating material does not spread uniformly on the outer edge side of the semiconductor wafer, and coating unevenness tends to occur in the coating film.

  On the other hand, when the spin coater disk is rotated at a low rotation, the centrifugal force applied to the coating material is weakened, and it becomes difficult to move to the outer edge side of the semiconductor wafer due to the centrifugal force, so coating unevenness is likely to occur in the coating film. End up.

  In particular, when a high-viscosity coating material is placed on a semiconductor wafer and the disk of the spin coater is rotated at a low rotation, the coating material 80 applied on the semiconductor wafer 70 is uniformly distributed as shown in FIG. Does not spread. As described above, when an attempt is made to uniformly form a thick coating film, uneven coating of the coating material 80 appears remarkably, making it difficult to form a uniform and thick coating film.

  An object of the present invention is to provide a method of manufacturing a semiconductor device that can uniformly form a thick coating film on a semiconductor wafer.

  In order to achieve the above object, according to a first feature of the present invention, a step of preparing a semiconductor wafer (10), a protrusion from one surface of the semiconductor wafer (10), and an outer edge portion of one surface of the semiconductor wafer (10) are provided. A step of providing wall members (21 to 25) that surround and surround the semiconductor wafer (10) horizontally, and a coating material (1) on the surface of the semiconductor wafer (10) on which the wall members (21 to 25) are formed. 31 and 32) and forming a coating film (50) on one surface of the semiconductor wafer (10).

  According to this, the coating members (31, 32) can be stored on one surface of the semiconductor wafer (10) by using the wall members (21-25) as walls. In this case, the thickness of the coating film (50) can be adjusted by adjusting the height of the wall members (21 to 25). Therefore, a uniform and thick coating film (50) can be formed on the semiconductor wafer (10). Such a method is particularly effective when a low-viscosity coating material (31) is used.

  In this case, in the step of pouring the coating material (31, 32), the semiconductor wafer (10) can be vibrated after the coating material (31, 32) is poured onto one surface of the semiconductor wafer (10). By such vibration, the coating materials (31, 32) can be applied uniformly.

  In the second feature of the present invention, a step of preparing the semiconductor wafer (10), and a wall member that protrudes from one surface of the semiconductor wafer (10) and surrounds the outer edge portion of the one surface of the semiconductor wafer (10). 21 to 25) and a step of pouring the coating material (31, 32) onto one surface of the semiconductor wafer (10) on which the wall members (21 to 25) are formed to vibrate the semiconductor wafer (10). A step of forming a coating film (50) on one surface of the semiconductor wafer (10) by rotating the wafer (10) about a central axis.

  Thereby, the coating material (31, 32) can be easily spread on the semiconductor wafer (10), so that the coating film (50) having a uniform thickness can be formed. In particular, when applying a high viscosity coating material (31, 32), the coating material (31, 32) can be spread uniformly by rotating the semiconductor wafer (10) while vibrating it. The thick coating film (50) can be formed by the wall members (21 to 25).

  As the wall members (21 to 25), a bank (21) can be formed on one surface of the semiconductor wafer (10) so as to surround and surround the outer edge portion of the one surface. Thereby, the coating material (31, 32) can be stored in the area surrounded by the bank (21).

  In this case, the bank (21) can be formed with a higher viscosity than the coating material (31, 32), and the coating material (31, 32) having a lower viscosity than the bank (21) can be poured. However, the viscosity of the coating material for forming the bank (21) is, for example, that after applying the coating material on the outer periphery of the semiconductor wafer (10), the coating material is cured by baking or the like to form the coating film (50). If it is possible to form a bank (21) having a required height, it is not necessary to have a viscosity higher than that of the coating material (31, 32) to be poured for forming a coating film. In other words, the bank (21) needs to have a viscosity capable of forming the bank (21) having a required height.

  Moreover, as a wall member (21-25), an adhesive tape (22) can be affixed on the side surface of a semiconductor wafer (10) so that it may protrude from one surface of a semiconductor wafer (10). Thereby, the coating material (31, 32) can be stored in the area surrounded by the adhesive tape (22). Since the adhesive tape (22) is only attached to the side surface of the semiconductor wafer (10), it can be easily removed.

  Furthermore, as wall members (21-25), ring members (23-25) can be fitted to the side surfaces of the semiconductor wafer (10) so as to protrude from one surface of the semiconductor wafer (10). Thereby, the coating material (31, 32) can be stored in the region surrounded by the ring members (23 to 25). Since the ring members (23 to 25) are only fitted on the side surfaces of the semiconductor wafer (10), they can be easily removed.

  Then, the coating materials (31, 32) can be spirally coated on the semiconductor wafer (10). Thereby, a coating material (31, 32) can be apply | coated uniformly to the whole one surface of a semiconductor wafer (10).

  Further, in the step of providing the wall members (21 to 25), as the wall members (21 to 25), a portion in which the wall members (21 to 25) are at least in contact with the coating material (31, 32) is water repellent. be able to.

  Thereby, a wall member (21-25) can be easily removed from an application material (31, 32). Moreover, the contact surface of the coating material (31, 32) and the wall member (21-25) can be finished finely.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means as described in embodiment mentioned later.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals in the drawings.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. In this embodiment, the case where a coating film is formed with a low-viscosity material with good coating properties will be described. FIG. 1 is a cross-sectional view showing a manufacturing process of a semiconductor device according to the first embodiment of the present invention. With reference to this figure, the manufacturing method of the semiconductor device of this embodiment will be described.

  First, the semiconductor wafer 10 is prepared. As the semiconductor wafer 10, a semiconductor wafer in which a semiconductor element is built is employed. Further, as the semiconductor wafer 10, for example, a Si wafer or a SiC wafer is employed.

  Next, a bank 21 is formed with a high viscosity material on the outer edge of one surface of the semiconductor wafer 10 where the coating film is to be formed. In this case, the bank 21 is formed so as to surround and surround the outer edge portion of one surface of the semiconductor wafer 10. As a method for forming the bank 21, for example, a method in which a high-viscosity material is put into a syringe and the high-viscosity material is pushed out from the syringe can be employed. The bank 21 corresponds to the wall member of the present invention.

  Moreover, it is preferable to provide the bank 21 which is the same as the thickness of the coating film to be formed or higher than the coating material to be formed. As the high viscosity material, for example, a resin material such as PIQ (polyimide) is employed.

  Subsequently, a liquid low-viscosity material 31 having a lower viscosity than the bank 21 is prepared. Also, an applicator 40 for applying the low viscosity material 31 to the semiconductor wafer 10 is prepared. As the low viscosity material 31, for example, a resin material such as PIQ (polyimide) is employed. Here, it is desirable that the respective coating materials used for forming the bank 21 and the coating film 50 are the same material (PIQ in the present embodiment). Of course, different coating materials may be used for the formation of the bank 21 and the coating film 50, and the coating film 50 can be formed thick. Moreover, as the applicator 40, for example, a syringe is employed. The low viscosity material 31 corresponds to the coating material of the present invention.

  Thereafter, the semiconductor wafer 10 is horizontally disposed, and the coating device 40 is disposed on one side of the semiconductor wafer 10 where the bank 21 is formed, and the low viscosity material 31 is poured from the coating device 40 onto one surface of the semiconductor wafer 10. In this case, the bank 21 on the semiconductor wafer 10 serves as a wall, and the low-viscosity material 31 accumulates in a region surrounded by the bank 21. Then, the low-viscosity material 31 is poured onto the semiconductor wafer 10 so as to have a certain thickness. Thus, a thick and uniform coating film 50 is formed on the semiconductor wafer 10.

  In addition, after drying the coating film 50 and completing a protective film, it can also open by exposing the part in which the electrode of the semiconductor element was formed among protective films by the photolithographic etching process.

  As described above, in the present embodiment, the bank 21 is formed with a high-viscosity material on the outer edge portion of one surface of the semiconductor wafer 10, and the low-viscosity material 31 is poured into a region surrounded by the bank 21 using the bank 21 as a wall. Thus, the coating film 50 is formed.

  Thereby, since the low-viscosity material 31 can be stored in the area surrounded by the bank 21, the coating film 50 on the semiconductor wafer 10 can be thickened. Further, since the liquid low-viscosity material 31 spreads uniformly on the semiconductor wafer 10, the coating film 50 having a uniform thickness can be formed.

(Second Embodiment)
In the present embodiment, only different parts from the first embodiment will be described. In the first embodiment, the bank 21 is formed of a high-viscosity material in order to store the low-viscosity material 31 on the semiconductor wafer 10, but in the present embodiment, the low-viscosity material 31 is stored using an adhesive tape. ing.

  FIG. 2 is a cross-sectional view showing a manufacturing process of a semiconductor device according to the second embodiment of the present invention. As shown in this figure, an adhesive tape 22 is affixed to the side surface of the semiconductor wafer 10 so as to surround and surround the side surface of the semiconductor wafer 10. In this case, the adhesive tape 22 is affixed to the side surface of the semiconductor wafer 10 so that the adhesive tape 22 protrudes from one surface of the semiconductor wafer 10 on which the coating film 50 is to be formed. In other words, the adhesive tape 22 protruding from one surface of the semiconductor wafer 10 serves as a side wall that blocks the low viscosity material 31. The adhesive tape 22 corresponds to the wall member of the present invention.

  As described above, the adhesive tape 22 is attached to the side surface of the semiconductor wafer 10, and the low-viscosity material 31 is poured into the area surrounded by the adhesive tape 22, thereby forming a uniform and thick coating film 50 on the semiconductor wafer 10. can do.

  Further, after the coating film 50 is formed on the semiconductor wafer 10 and dried, it is only necessary to peel the adhesive tape 22 from the semiconductor wafer 10, so that the adhesive tape 22 can be easily removed.

(Third embodiment)
In the present embodiment, only different portions from the above embodiments will be described. This embodiment is characterized in that the low-viscosity material 31 is stored by a ring member.

  FIG. 3 is a cross-sectional view showing a manufacturing process of a semiconductor device according to the third embodiment of the present invention. As shown in this figure, a ring member 23 is fitted to the side surface of the semiconductor wafer 10 so as to surround the side surface of the semiconductor wafer 10 in a round. As the ring member 23, an elastically deforming ring or an elastic band is employed. As the ring member 23, a tapered ring 24 shown in FIG. 4A or a stepped ring 25 shown in FIG. 4B can be adopted. The tapered ring 24 and the stepped ring 25 correspond to the ring member of the present invention, and the ring member 23, the tapered ring 24, and the stepped ring 25 correspond to the wall member of the present invention.

  Then, the ring member 23 is fitted to the side surface of the semiconductor wafer 10 so that the ring member 23 protrudes from one surface of the semiconductor wafer 10 on which the coating film 50 is to be formed. When the ring member 23 is a resin member that is elastically deformed, for example, the side surface of the semiconductor wafer 10 can be tightened by the resin member being elastically deformed and contracted. Subsequently, as described above, the low-viscosity material 31 is poured into the region surrounded by the ring member 23 and dried to form the coating film 50.

  As described above, the ring member 23 is fitted to the side surface of the semiconductor wafer 10, and the low viscosity material 31 is poured into the region surrounded by the ring member 23, thereby forming a uniform and thick coating film 50 on the semiconductor wafer 10. be able to. Further, since only the ring member 23 is fitted to the semiconductor wafer 10, the ring member 23 can be easily detached from the semiconductor wafer 10.

(Fourth embodiment)
In the present embodiment, only different parts from the first embodiment will be described. In this embodiment, a case where a coating film is formed with a high viscosity material having poor coating properties will be described. FIG. 5 is a cross-sectional view showing a manufacturing process of a semiconductor device according to the fourth embodiment of the present invention. With reference to this figure, the manufacturing method of the semiconductor device of this embodiment will be described.

  First, in the process shown in FIG. 5A, the semiconductor wafer 10 is prepared in the same manner as in the first embodiment, and one surface of the semiconductor wafer 10 is formed on the outer edge of one surface of the semiconductor wafer 10 on which the coating film is to be formed. The bank 21 is formed of a high-viscosity material so as to surround and surround the outer edge portion.

  Then, the applicator 40 containing the high viscosity material 32 is prepared. Then, the applicator 40 is disposed on one side of the semiconductor wafer 10 where the bank 21 is formed, and the high viscosity material 32 is poured from the applicator 40 onto one surface of the semiconductor wafer 10. In this case, for example, the high viscosity material 32 is poured into the central portion of the semiconductor wafer 10. The high viscosity material 32 corresponds to the coating material of the present invention.

  Next, in the step shown in FIG. 5B, the semiconductor wafer 10 is placed on the disk 60 of a spin coater with a vibration function, for example, and the disk 60 is rotated while being vibrated, so that the semiconductor wafer 10 is vibrated. While rotating the semiconductor wafer 10 around the central axis of the semiconductor wafer 10, the high-viscosity material 32 is spin-coated on the semiconductor wafer 10.

  According to this, the high-viscosity material 32 spreads so as to cover one surface of the semiconductor wafer 10 by receiving vibration from the disk 60 through the semiconductor wafer 10, while the high-viscosity material 32 rotates due to the rotation of the semiconductor wafer 10. Therefore, it becomes easy to move to the outer edge portion side of the semiconductor wafer 10, and the high-viscosity material 32 can be spread evenly to the outer edge portion side of the semiconductor wafer 10. Further, after the semiconductor wafer 10 is rotated and the high-viscosity material 32 is spread over the outer edge portion of the semiconductor wafer 10 with a uniform thickness, the rotation of the semiconductor wafer 10 is stopped and vibrations are applied to make the coating film 50 uniform. Can be improved. Thus, a thick and uniform coating film 50 can be formed on the semiconductor wafer 10.

  5B, the high-viscosity material 32 can be spread on the semiconductor wafer 10 only by vibrating the disk 60.

  As described above, when applying the high-viscosity material 32 on the semiconductor wafer 10, the high-viscosity material 32 can be spread on the semiconductor wafer 10 by vibrating at least the semiconductor wafer 10. Further, by rotating the semiconductor wafer 10 while vibrating, the high-viscosity material 32 can be distributed to the outer edge portion side of the semiconductor wafer 10 with a uniform thickness without unevenness. As a result, a thick and uniform coating film is formed on the semiconductor wafer 10. 50 can be formed. Since the best combination of rotation and vibration of the semiconductor wafer 10 depends on the viscosity of the coating material, it is desirable to combine the rotation and vibration of the semiconductor wafer 10 in a timely manner depending on the viscosity of the coating material used.

(Fifth embodiment)
In the present embodiment, only parts different from the fourth embodiment will be described. In the fourth embodiment, the high-viscosity material 32 is poured into the central portion of the semiconductor wafer 10. However, the present embodiment is characterized in that the high-viscosity material 32 is more efficiently and evenly applied to the semiconductor wafer 10. Yes.

  FIG. 6 is a cross-sectional view showing a manufacturing process of a semiconductor device according to the fifth embodiment of the present invention. As shown in this figure, first, the semiconductor wafer 10 is placed on the disk 60 shown in FIG. 5B, and the applicator 40 in which the high-viscosity material 32 is placed is placed on the central portion of the semiconductor wafer 10. Deploy.

  Subsequently, the semiconductor wafer 10 is rotated while being vibrated. Then, the applicator 40 is moved in the radial direction of the semiconductor wafer 10 while pouring the high viscosity material 32 from the applicator 40 into the central portion of the semiconductor wafer 10. As a result, as shown in FIG. 6, the diameter of the high-viscosity material 32 increases, and the high-viscosity material 32 is spirally applied onto the semiconductor wafer 10.

  In this case, the high-viscosity material 32 receives vibration and spreads on the semiconductor wafer 10 and receives a centrifugal force according to the rotation of the semiconductor wafer 10. Spread on top.

  As described above, when the semiconductor wafer 10 is rotated while being vibrated, the high-viscosity material 32 is poured into the semiconductor wafer 10 from the applicator 40 and moved in the radial direction from the central portion of the semiconductor wafer 10, thereby increasing the viscosity. The material 32 can be more efficiently and evenly applied to the semiconductor wafer 10.

(Sixth embodiment)
In the present embodiment, only different portions from the above embodiments will be described. In each of the above embodiments, the protrusion height from one surface of the semiconductor wafer 10 on which the coating film 50 of the bank 21, the adhesive tape 22, and the ring member 23 is formed is the same as the thickness of the coating film to be formed or the coating to be formed. Although the case where the height is higher than the material has been described, the bank 21 or the like may be slightly lower than the coating film 50 when the coating film 50 is applied to the semiconductor wafer 10. In this embodiment, this case will be described.

  Hereinafter, a manufacturing method using the stepped ring 25 as the ring member 23 will be described. Of course, not only the stepped ring 25 but also other ones may be used.

  FIG. 7 is a partial cross-sectional view showing the manufacturing process of the semiconductor device according to the present embodiment. First, as shown in FIG. 7A, the stepped ring 25 is fitted to the side surface of the semiconductor wafer 10, and the liquid low-viscosity material 31 is placed on one side of the semiconductor wafer 10 where the stepped ring 25 protrudes. Apply. In this case, the coating film 50 rises from the stepped ring 25 due to the surface tension of the coating film 50. That is, the stepped ring 25 is slightly lower than the coating film 50 with respect to one surface of the semiconductor wafer 10.

  Subsequently, in FIG. 7B, the coating film 50 is cured. According to this, the swelling of the outer peripheral part of the coating film 50 after hardening decreases. Then, as shown in FIG. 7C, the coating film 50 is provided on one surface of the semiconductor wafer 10 by removing the stepped ring 25 from the semiconductor wafer 10.

  As described above, the coating film 50 can rise from the stepped ring 25 due to the surface tension of the coating film 50. The method according to the present embodiment is effective when there are many solvent components in the low-viscosity material 30 that is the coating material, and the film thickness reduction during curing is large.

(Other embodiments)
The method shown in the fifth embodiment can also be adopted as the method shown in the first to fourth embodiments. Moreover, the method shown by 1st-3rd embodiment, the method shown by 4th Embodiment, and the method shown by 5th Embodiment can also be combined, respectively. Thereby, the coating film 50 can be formed more efficiently.

  In each of the above-described embodiments, the semiconductor wafer 10 has been described as an example of an object on which the coating film 50 is formed. However, when the thick coating film 50 is formed on, for example, a glass substrate, metal, ceramics, etc. The method can be adopted.

  When a non-water-repellent wall member is used as the wall member such as the adhesive tape 22 and the ring member 23 shown in the second and third embodiments, the outermost peripheral portion of the coating film 50 gets wet along the wall member after curing. In some cases, the shape becomes thicker in a tapered shape, or when a wall member is removed, burrs or the like may occur. Therefore, the material itself of the wall member such as the adhesive tape 22 and the ring member 23, or at least the surface that contacts the coating film 50 when mounted on the semiconductor wafer 10 can be configured to be water repellent.

  That is, as shown in FIG. 8A, for example, a water-repellent stepped ring 25 is attached to the side surface of the semiconductor wafer 10 to provide the coating film 50 on the semiconductor wafer 10, and as shown in FIG. 8B. The coating film 50 is cured. 8C, when the step ring 25 is removed from the semiconductor wafer 10, the step ring 25 and the coating film 50 are not in close contact with each other, so that the step ring 25 can be easily removed. . Moreover, generation | occurrence | production of a burr | flash or a taper-shaped thick film part can be suppressed in the outer peripheral part of the coating film 50. FIG. As the water repellent material, for example, a fluororesin can be used.

  In this case, a water-repellent material can be adopted as the bank 21 and the adhesive tape 22 shown in FIGS. 1 and 2, or a portion of the bank 21 and the adhesive tape 22 that contacts the coating material can be subjected to water repellent treatment.

  In the fifth embodiment, the semiconductor wafer 10 is rotated while being vibrated, and the high-viscosity material 32 is moved to the semiconductor wafer 10 by moving the applicator 40 in the radial direction of the semiconductor wafer 10 while pouring the high-viscosity material 32 into the semiconductor wafer 10. Although it was applied on the wafer 10 in a spiral shape, the semiconductor wafer 10 may be rotated and the high-viscosity material 32 may be applied on the semiconductor wafer 10 in a spiral shape, and then the semiconductor wafer 10 may be vibrated. . That is, after the semiconductor wafer 10 is rotated and the coating material is poured into one surface of the semiconductor wafer 10, the coating film 50 can be made uniform by applying vibration to the semiconductor wafer 10.

It is sectional drawing which showed the manufacturing process of the semiconductor device which concerns on 1st Embodiment of this invention. It is sectional drawing which showed the manufacturing process of the semiconductor device which concerns on 2nd Embodiment of this invention. It is sectional drawing which showed the manufacturing process of the semiconductor device which concerns on 3rd Embodiment of this invention. In 3rd Embodiment, it is the figure which showed the taper ring and the stepped ring as a ring member. It is sectional drawing which showed the manufacturing process of the semiconductor device which concerns on 4th Embodiment of this invention. It is sectional drawing which showed the manufacturing process of the semiconductor device which concerns on 5th Embodiment of this invention. It is sectional drawing which showed the manufacturing process of the semiconductor device which concerns on 6th Embodiment of this invention. In other embodiment, it is the figure which showed the manufacturing process of the semiconductor device when using a water-repellent wall member. It is the figure which showed the formation method of the conventional coating film.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor wafer, 21 ... Bank, 22 ... Adhesive tape, 23 ... Ring member, 24 ... Tapered ring, 25 ... Step ring, 31 ... Low-viscosity material, 32 ... High-viscosity material, 50 ... Coating film.

Claims (9)

Preparing a semiconductor wafer (10);
Providing wall members (21 to 25) projecting from one surface of the semiconductor wafer (10) and surrounding the outer edge portion of the one surface of the semiconductor wafer (10).
The semiconductor wafer (10) is disposed horizontally, and the coating material (31, 32) is poured into one surface of the semiconductor wafer (10) where the wall members (21 to 25) are formed, and the semiconductor wafer (10) Forming a coating film (50) on one surface of the semiconductor device. In the step of pouring the coating material (31, 32), the semiconductor wafer (10) is vibrated after the coating material (31, 32) is poured onto one surface of the semiconductor wafer (10). Item 14. A method for manufacturing a semiconductor device according to Item 1. Preparing a semiconductor wafer (10);
Providing wall members (21 to 25) projecting from one surface of the semiconductor wafer (10) and surrounding the outer edge portion of the one surface of the semiconductor wafer (10).
The coating material (31, 32) is poured into one surface of the semiconductor wafer (10) where the wall members (21 to 25) are formed, and the semiconductor wafer (10) is vibrated while the semiconductor wafer (10) is vibrated. Forming a coating film (50) on one surface of the semiconductor wafer (10) by rotating about a central axis. A method for manufacturing a semiconductor device, comprising: In the step of providing the wall members (21 to 25), as the wall members (21 to 25), on the one surface of the semiconductor wafer (10), a bank (21 4. The method for manufacturing a semiconductor device according to claim 1, wherein: In the step of forming the bank (21), the bank (21) is formed with a higher viscosity than the coating material (31, 32),
5. The method of manufacturing a semiconductor device according to claim 4, wherein in the step of pouring the coating material (31, 32), a material having a lower viscosity than the bank (21) is poured. In the step of providing the wall members (21 to 25), as the wall members (21 to 25), an adhesive tape (22) is provided on the side surface of the semiconductor wafer (10) so as to protrude from one surface of the semiconductor wafer (10). The method of manufacturing a semiconductor device according to claim 1, wherein: In the step of providing the wall members (21-25), as the wall members (21-25), ring members (23 on the side surface of the semiconductor wafer (10) so as to protrude from one surface of the semiconductor wafer (10). 25) The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the method is fitted. 8. The method according to claim 1, wherein in the step of pouring the coating material (31, 32), the coating material (31, 32) is spirally coated on the semiconductor wafer (10). The manufacturing method of the semiconductor device as described in one. In the step of providing the wall members (21 to 25), as the wall members (21 to 25), a portion where the wall members (21 to 25) are in contact with at least the coating material (31, 32) is water repellent. 9. The method for manufacturing a semiconductor device according to claim 1, wherein the method is used.

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