JP2004146639A - Electronic component and its fabricating process - Google Patents

Electronic component and its fabricating process Download PDF

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Publication number
JP2004146639A
JP2004146639A JP2002310738A JP2002310738A JP2004146639A JP 2004146639 A JP2004146639 A JP 2004146639A JP 2002310738 A JP2002310738 A JP 2002310738A JP 2002310738 A JP2002310738 A JP 2002310738A JP 2004146639 A JP2004146639 A JP 2004146639A
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Prior art keywords
resin
sealing
frame
semiconductor element
forming
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JP2002310738A
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JP3888284B2 (en
Inventor
Tomoyuki Sonoda
園田　知幸
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component fabricating process in which a shape after resin sealing is secured as thin as possible and applying time of a sealing resin is shortened to enable productivity to be raised, and to provide an electronic component. <P>SOLUTION: In a resin sealing process in which a semiconductor element is mounted on a substrate to cover the semiconductor element with the resin, a frame forming resin is applied to a circumference of the semiconductor element 5 to form a resin frame 3a for serving as a resin flowing out preventing frame. After a resin bump 9a is formed which is applied with a sealing resin 9 in a consecutive bump manner near an inside of the resin frame 3a, by repeating a motion for making an applying nozzle 8a contact the resin bump 9a and moving the applying nozzle in the inside direction thereof with resin discharge stopped; a resin cover forming motion for covering the whole of the inside of the resin frame 3a with the sealing resin 9 are performed. Consequently, the applying nozzle with a large diameter can be used to enable the applying time to shortened and besides the shape after resin sealing can be low-profile. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体素子を基板に実装しこの半導体素子を樹脂封止して成る電子部品製造方法およびこの製造方法によって製造された電子部品に関するものである。
【０００２】
【従来の技術】
半導体装置など半導体素子を基板に実装した構成の電子部品の製造工程では、基板に実装された半導体素子を被覆して保護するための樹脂封止が行われる。この樹脂封止方法として、流動状態の封止樹脂を塗布ノズルによって基板に実装された半導体素子の上面を覆って塗布する方法が知られている。この方法によれば、モールドプレスを用いるモールド成型方法と比較して、簡便な設備で樹脂封止が行えるという利点がある。
【０００３】
ところで近年、ＩＣカード内蔵の用途など、薄型の半導体装置が用いられるようになってきていることから、樹脂封止工程においても、封止後の厚みを極力薄くすることが求められている。この方策として、塗布ノズルとして細径ノズルを用い樹脂封止のための樹脂塗布時の塗布流量を小さくして、塗布ピッチを微細にすることにより、できるだけ均一で薄い樹脂層を形成することが行われていた（例えば特許文献１参照）。
【０００４】
【特許文献１】
特開平１−１８６６３６号公報
【０００５】
【発明が解決しようとする課題】
しかしながら上記従来の方法では、塗布流量が少ないことから所要量の塗布を行うのに長時間を要して生産性の向上が阻害されるとともに、塗布後に流動状態の樹脂の表面張力によって塗布面の中央部が周囲よりも高くなる凸形状となり易く、樹脂封止後の形状を所定の薄さに確保することが困難であるという問題点があった。
【０００６】
そこで本発明は、樹脂封止後の形状を極力薄型に確保するとともに、封止樹脂の塗布時間を短縮して生産性を向上させることができる電子部品の製造方法および電子部品を提供することを目的とする。
【０００７】
【課題を解決するための手段】
請求項１記載の電子部品製造方法は、半導体素子を基板に実装しこの半導体素子を樹脂封止して成る電子部品を製造する電子部品製造方法であって、基板に前記半導体素子を実装する半導体素子実装工程と、半導体素子実装後の基板の上面に前記半導体素子を囲んで枠形成用樹脂を塗布することにより封止樹脂の塗布範囲外への流動を防止する流動防止枠を形成する流動防止枠形成工程と、前記流動防止枠の内側へ流動状態の封止樹脂を供給することにより前記半導体素子を封止樹脂で覆って封止する樹脂封止工程とを含み、前記樹脂封止工程において、塗布ノズルから封止樹脂を吐出させながらこの塗布ノズルを流動防止枠の内側で移動させることにより流動防止枠の内周近傍に封止樹脂が連続した堤状に塗布された樹脂堤を形成する樹脂堤形成動作と、塗布ノズルからの封止樹脂の吐出を停止した状態で塗布ノズルを前記樹脂堤に接触させた後にこの塗布ノズルを樹脂堤の内側方向へ移動させる動作を反復することにより流動防止枠内全面を封止樹脂で覆う樹脂被覆形成動作とを行う。
【０００８】
請求項２記載の電子部品製造方法は、請求項１記載の電子部品製造方法であって、前記樹脂封止工程後に枠形成用樹脂および封止樹脂を硬化させる樹脂硬化工程とを含む。
【０００９】
請求項３記載の電子部品製造方法は、請求項１記載の電子部品製造方法であって、前記流動防止枠形成工程後に枠形成用樹脂を硬化させる第１の樹脂硬化工程と、前記樹脂封止工程後に封止樹脂を硬化させる第２の樹脂硬化工程とを含む。
【００１０】
請求項４記載の電子部品は、半導体素子を基板に実装しこの半導体素子を樹脂封止して成る電子部品であって、基板に前記半導体素子を実装する半導体素子実装工程と、半導体素子実装後の基板の上面に前記半導体素子を囲んで枠形成用樹脂を塗布することにより封止樹脂の塗布範囲外への流動を防止する流動防止枠を形成する流動防止枠形成工程と、前記流動防止枠の内側へ流動状態の封止樹脂を供給することにより前記半導体素子を封止樹脂で覆って封止する樹脂封止工程とを含み、前記樹脂封止工程において、塗布ノズルから封止樹脂を吐出させながらこの塗布ノズルを流動防止枠の内側で移動させることにより流動防止枠の内周近傍に封止樹脂が連続した堤状に塗布された樹脂堤を形成する樹脂堤形成動作と、塗布ノズルからの封止樹脂の吐出を停止した状態で塗布ノズルを前記樹脂堤に接触させた後にこの塗布ノズルを樹脂堤の内側方向へ移動させる動作を反復することにより流動防止枠内全面を封止樹脂で覆う樹脂被覆形成動作とを行う電子部品の製造方法によって製造された。
【００１１】
本発明によれば、半導体素子実装後の樹脂封止工程において、塗布ノズルから封止樹脂を吐出させながらこの塗布ノズルを流動防止枠の内周に沿って移動させることにより流動防止枠の内周近傍に封止樹脂が連続した堤状に塗布された樹脂堤を形成する樹脂堤形成動作と、塗布ノズルからの封止樹脂の吐出を停止した状態で塗布ノズルを樹脂堤に接触させた後に樹脂堤の内側方向へ移動させる動作を反復して流動防止枠内全面を封止樹脂で覆う樹脂被覆形成動作とを行うことにより、大径の塗布ノズルの使用を可能にして塗布時間を短縮できるとともに、塗布面の中央部の高さを低く保って封止後の形状を薄型にすることができる。
【００１２】
【発明の実施の形態】
次に本発明の実施の形態を図面を参照して説明する。図１（ａ）は本発明の一実施の形態の電子部品の平面図、図１（ｂ）は本発明の一実施の形態の電子部品の断面図、図２、図３，図４は本発明の一実施の形態の電子部品製造方法の工程説明図、図５は本発明の一実施の形態の電子部品の断面図である。
【００１３】
本実施の形態に示す電子部品製造方法は、半導体素子を基板に実装しこの半導体素子を樹脂封止して成る電子部品を製造するものである。図１は、樹脂封止前の電子部品を示している。図１（ａ）、（ｂ）に示すように、基板１の実装位置には、接着剤４を介して半導体素子５が実装されている。半導体素子５の上面の外部接続用の電極６と基板１上面の電極２とは、ボンディングワイヤ７によって接続されている（半導体素子実装工程）。
【００１４】
次に、図２，図３，図４を参照して、図１に示す電子部品を樹脂封止して電子部品を完成させる樹脂封止工程について説明する。なお、図２，図３，図４においては、電極２，電極６およびボンディングワイヤ７の図示を省略している。図２（ａ）において、基板１の上面に実装された半導体素子５の周囲を囲んで、ディスペンサ８Ａによって枠形成用樹脂３が塗布される。これにより、封止樹脂の塗布範囲外への流動を防止する流動防止枠としての樹脂枠３ａが形成される（流動防止枠形成工程）。樹脂枠３ａは、後述するように流動状態の封止樹脂を塗布する際に封止樹脂の塗布範囲外への不要な流動を防止する流動防止枠として機能する。
【００１５】
次に半導体素子５の樹脂封止が行われる。まず基板１の上面の塗布範囲（樹脂枠３ａの内側）の上方に、封止樹脂９を吐出するディスペンサ８Ｂを位置させる。ここで、枠形成用樹脂３と封止樹脂９について説明する。封止樹脂９は、枠形成用樹脂３が未硬化の状態のまま樹脂枠３ａ内に塗布されることから、これら２種類の樹脂は相互に混ざり合わない性質のものであることが望ましい。この要請を満足させるため、本実施の形態では以下に説明するような枠形成用樹脂３および封止樹脂９の組み合わせを用いる。
【００１６】
まず枠形成用樹脂３としては、望ましくはチキソ比が２．２〜２．４のエポキシ樹脂を用い、封止樹脂９として、望ましくはチキソ比が１．１〜１．２の低チキソ比のエポキシ樹脂を用いる。チキソ比は粘性流体の流れ易さを表す特性値であり、Ｅ型粘度計を使用して、０．５回転の条件で求められた測定値を、５回転の条件で求められた測定粘度で除した比率で定義されるものである。すなわち、チキソ比が大きい程流れ難い粘性流体であることを示す。
【００１７】
このようにチキソ比が大きい樹脂を枠形成用樹脂として用い、チキソ比が小さい樹脂を封止樹脂として用いることにより、２種類の樹脂が未硬化の状態で接触した場合においても、２種類の樹脂が容易に混ざり合うことがない。したがって封止樹脂９が樹脂枠３ａと混ざり合って外側に広がることがなく、流動防止枠としての機能が確保される。
【００１８】
次いで、図２（ｂ）に示すようにディスペンサ８Ｂの塗布ノズル８ａは、塗布範囲内の塗布開始点ＰＳ（図３（ａ）参照）に移動する。そして塗布ノズル８ａから流動状態の封止樹脂９を吐出させながら、図３（ａ）に示す塗布軌跡に従って樹脂枠３ａの内周に沿って移動することにより、塗布軌跡上に封止樹脂９を塗布する。この塗布動作においては、所要塗布量に応じて塗布軌跡を順次内側へ向かってずらしながら塗布を反復し、所要量の封止樹脂９を塗布する。これにより図２（ｃ）、図３（ｂ）に示すように、樹脂枠３ａの内周近傍には封止樹脂９が連続した堤状に塗布された樹脂堤９ａが形成される（樹脂堤形成動作）。
【００１９】
この樹脂堤形成においては、塗布範囲内の中央部分には封止樹脂９は塗布されず、半導体素子５の上面は露呈状態のままである。またこの塗布動作においては塗布高さを均一にする必要がないことから、塗布条件として太径の塗布ノズル８ａを高速で移動させる高速塗布が採用可能となっている。
【００２０】
次に図４を参照して、樹脂枠３ａ内全面を封止樹脂９で覆う樹脂被覆形成動作について説明する。ここでは、塗布ノズル８ａからの封止樹脂９の吐出を停止した状態で、図４（ａ）に示す塗布軌跡に従って塗布ノズル８ａを樹脂堤９ａに接触させた後に樹脂堤９ａの内側方向へ移動させる動作を反復する。すなわち、図４（ｂ）に示すように、樹脂堤９ａの上面近傍の封止樹脂９を塗布ノズル８ａの先端部に付着させ、塗布ノズル８ａの移動によって半導体素子５の上面まで掻き寄せる。
【００２１】
そしてこの封止樹脂９の掻き寄せを樹脂枠３ａ内側の全範囲について反復することにより、図４（ｃ）に示すように、樹脂枠３ａ内全面は封止樹脂９によって覆われる（樹脂被覆形成動作）。またこの樹脂形成動作は、封止樹脂９の吐出量を調整する必要がないので、高速で行うことができる。
【００２２】
次に、樹脂封止工程後の基板１は加熱炉に送られる。そしてここで枠形成用樹脂３および封止樹脂９の熱硬化温度よりも高温で所定時間加熱することにより、枠形成用樹脂３および封止樹脂９の双方がほぼ同時期に硬化する（樹脂硬化工程）。これにより、半導体素子５を基板１に実装しこの半導体素子５を樹脂封止して成る電子部品が完成する。
【００２３】
図５は、このようにして製造された電子部品の断面を示している。本実施の形態では、上述のように樹脂枠３ａ内への塗布ノズル８ａによる封止樹脂９の塗布において、樹脂枠３ａの内周近傍に樹脂堤９ａを形成するようにしており塗布範囲の中央部分には封止樹脂９が吐出されないことから、樹脂枠３ａ内全面に封止樹脂９を吐出する従来の塗布方法による塗布形状、すなわち樹脂枠３ａ内で封止樹脂９が表面張力によって盛り上がり中央部分が周囲よりも高くなる凸形状を避けることができる。
【００２４】
従って、樹脂封止後の封止樹脂９の塗布高さｈ１は、図５に示すように樹脂枠３ａとほぼ同じ高さに抑えられて、過度に高くなることがない。これにより、樹脂封止後の電子部品の厚み寸法を極力小さく抑えて薄型の電子部品を実現することが可能となっている。また、本実施の形態によれば、封止樹脂９の塗布形状（上下方向の断面形状）は、中央部近傍が周囲よりも低い凹形状となっている。このため、同一樹脂量で比較した場合、基板１に対して曲げ外力が作用した場合における電子部品全体の曲げ剛性が増大し、破壊に対する強度が向上するという効果を併せて得ることができる。
【００２５】
なお上記実施の形態においては、枠形成用樹脂３および封止樹脂９を同時に熱硬化させるようにしているが、図２（ａ）に示す流動防止枠形成工程後に基板１を加熱炉に送り、ここで枠形成用樹脂３を硬化させて（第１の樹脂硬化工程）固化状態の樹脂枠３ａを形成し、この樹脂枠３ａ内に封止樹脂９を塗布するようにしてもよい。この場合には、樹脂封止工程後に基板１を再度加熱炉に送り封止樹脂９を硬化させる（第２の樹脂硬化工程）。
【００２６】
このような方法を採用することにより、同一基板に対して加熱を２回反復する必要があり、工程が複雑化するものの、枠形成用樹脂３および封止樹脂９としてチキソ比の異なる２種類の樹脂を組み合わせて用いる必要がなく、同一種類の樹脂材料を準備するのみでよい。
【００２７】
【発明の効果】
本発明によれば、半導体素子実装後の樹脂封止工程において、塗布ノズルから封止樹脂を吐出させながらこの塗布ノズルを流動防止枠の内周に沿って移動させることにより流動防止枠の内周近傍に封止樹脂が連続した堤状に塗布された樹脂堤を形成する樹脂堤形成動作と、塗布ノズルからの封止樹脂の吐出を停止した状態で塗布ノズルを樹脂堤に接触させた後に樹脂堤の内側方向へ移動させる動作を反復して流動防止枠内全面を封止樹脂で覆う樹脂被覆形成動作とを行うようにしたので、大径の塗布ノズルの使用を可能にして塗布時間を短縮できるとともに、塗布面の中央部の高さを低く保って封止後の形状を薄型にすることができる。
【図面の簡単な説明】
【図１】（ａ）本発明の一実施の形態の電子部品の平面図
（ｂ）本発明の一実施の形態の電子部品の断面図
【図２】本発明の一実施の形態の電子部品製造方法の工程説明図
【図３】本発明の一実施の形態の電子部品製造方法の工程説明図
【図４】本発明の一実施の形態の電子部品製造方法の工程説明図
【図５】本発明の一実施の形態の電子部品の断面図
【符号の説明】
１　基板
３　枠形成用樹脂
３ａ　樹脂枠
５　半導体素子
８ａ　塗布ノズル
９　封止樹脂
９ａ　樹脂堤[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an electronic component manufacturing method in which a semiconductor element is mounted on a substrate and the semiconductor element is sealed with a resin, and an electronic component manufactured by the manufacturing method.
[0002]
[Prior art]
In a manufacturing process of an electronic component having a configuration in which a semiconductor element such as a semiconductor device is mounted on a substrate, resin sealing for covering and protecting the semiconductor element mounted on the substrate is performed. As this resin sealing method, there is known a method in which a sealing resin in a flowing state is applied by a coating nozzle so as to cover an upper surface of a semiconductor element mounted on a substrate. According to this method, there is an advantage that resin sealing can be performed with simple equipment as compared with a molding method using a mold press.
[0003]
By the way, in recent years, since a thin semiconductor device has been used, for example, for use with a built-in IC card, the thickness after sealing has been required to be reduced as much as possible in the resin sealing step. As a countermeasure, it is necessary to use a small-diameter nozzle as the application nozzle, reduce the application flow rate during resin application for resin encapsulation, and make the application pitch fine, thereby forming a resin layer as uniform and thin as possible. (For example, see Patent Document 1).
[0004]
[Patent Document 1]
JP-A-1-186636
[Problems to be solved by the invention]
However, in the above-mentioned conventional method, since the application flow rate is small, it takes a long time to perform a required amount of application, thereby hindering the improvement in productivity, and the surface tension of the resin in a fluid state after the application makes it possible to prevent the application surface from being coated. There is a problem that the central portion is likely to have a convex shape that is higher than the surroundings, and it is difficult to secure the shape after resin sealing to a predetermined thickness.
[0006]
Therefore, the present invention provides a method for manufacturing an electronic component and an electronic component capable of improving productivity by shortening the application time of the sealing resin while securing the shape after resin sealing as thin as possible. Aim.
[0007]
[Means for Solving the Problems]
2. The electronic component manufacturing method according to claim 1, wherein the semiconductor device is mounted on a substrate, and the electronic device is manufactured by sealing the semiconductor device with a resin. An element mounting step, and a flow preventing frame for forming a flow preventing frame for preventing the sealing resin from flowing out of the application range by applying a resin for forming a frame surrounding the semiconductor element on the upper surface of the substrate after mounting the semiconductor element. A frame forming step, and a resin sealing step of covering and sealing the semiconductor element with a sealing resin by supplying a sealing resin in a flowing state to the inside of the flow prevention frame; By moving the application nozzle inside the flow prevention frame while discharging the sealing resin from the application nozzle, a resin ridge in which the sealing resin is applied in a continuous levee shape near the inner periphery of the flow prevention frame is formed. resin The flow prevention frame is repeated by repeating a forming operation and an operation of moving the application nozzle inward of the resin bank after the application nozzle is brought into contact with the resin bank while the discharge of the sealing resin from the application nozzle is stopped. A resin coating forming operation of covering the entire inner surface with a sealing resin is performed.
[0008]
The electronic component manufacturing method according to a second aspect is the electronic component manufacturing method according to the first aspect, and includes a resin curing step of curing the frame forming resin and the sealing resin after the resin sealing step.
[0009]
The electronic component manufacturing method according to claim 3 is the electronic component manufacturing method according to claim 1, wherein a first resin curing step of curing a frame forming resin after the flow preventing frame forming step, and the resin sealing. A second resin curing step of curing the sealing resin after the step.
[0010]
5. The electronic component according to claim 4, wherein the semiconductor element is mounted on a substrate, and the semiconductor element is sealed with a resin. A flow-preventing frame forming step of forming a flow-preventing frame that prevents the sealing resin from flowing out of the application range by applying a frame-forming resin around the semiconductor element on the upper surface of the substrate; A resin sealing step of covering the semiconductor element with the sealing resin by supplying the sealing resin in a flowing state to the inside of the semiconductor device, and discharging the sealing resin from an application nozzle in the resin sealing step. By moving the application nozzle inside the flow prevention frame while causing the resin nozzle to move in the vicinity of the inner circumference of the flow prevention frame to form a resin levee coated in a continuous ridge shape, Sealing After the application of the oil is stopped, the application nozzle is brought into contact with the resin bank, and then the operation of moving the application nozzle inward of the resin bank is repeated, thereby covering the entire surface of the flow prevention frame with the sealing resin. It is manufactured by a method of manufacturing an electronic component that performs a forming operation.
[0011]
According to the present invention, in the resin sealing step after the semiconductor element is mounted, the application nozzle is moved along the inner circumference of the flow prevention frame while discharging the sealing resin from the application nozzle, thereby moving the inner circumference of the flow prevention frame. A resin levee forming operation that forms a resin levee in which a sealing resin is applied in a continuous levee shape in the vicinity, and after the application nozzle is brought into contact with the resin levee while the discharge of the sealing resin from the application nozzle is stopped. By repeating the operation of moving in the inward direction of the bank and performing a resin coating forming operation of covering the entire surface of the flow prevention frame with the sealing resin, it is possible to use a large-diameter application nozzle and shorten the application time. In addition, the height of the central portion of the application surface can be kept low, and the shape after sealing can be made thin.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1A is a plan view of an electronic component according to one embodiment of the present invention, FIG. 1B is a cross-sectional view of the electronic component according to one embodiment of the present invention, and FIGS. FIG. 5 is a process explanatory view of a method for manufacturing an electronic component according to an embodiment of the present invention, and FIG. 5 is a sectional view of the electronic component according to an embodiment of the present invention.
[0013]
The electronic component manufacturing method described in the present embodiment is for manufacturing an electronic component in which a semiconductor element is mounted on a substrate and the semiconductor element is sealed with a resin. FIG. 1 shows an electronic component before resin sealing. As shown in FIGS. 1A and 1B, a semiconductor element 5 is mounted on a mounting position of the substrate 1 via an adhesive 4. The external connection electrode 6 on the upper surface of the semiconductor element 5 and the electrode 2 on the upper surface of the substrate 1 are connected by bonding wires 7 (semiconductor element mounting step).
[0014]
Next, with reference to FIGS. 2, 3, and 4, a resin sealing step of completing the electronic component by resin sealing the electronic component shown in FIG. 1 will be described. 2, 3, and 4, the electrodes 2, the electrodes 6, and the bonding wires 7 are not shown. In FIG. 2A, the frame forming resin 3 is applied by a dispenser 8A around the periphery of the semiconductor element 5 mounted on the upper surface of the substrate 1. This forms the resin frame 3a as a flow prevention frame for preventing the flow of the sealing resin out of the application range (flow prevention frame forming step). The resin frame 3a functions as a flow prevention frame that prevents unnecessary flow outside the coating range of the sealing resin when the flow of the sealing resin is applied as described later.
[0015]
Next, resin sealing of the semiconductor element 5 is performed. First, a dispenser 8B for discharging the sealing resin 9 is positioned above the application range (inside the resin frame 3a) on the upper surface of the substrate 1. Here, the frame forming resin 3 and the sealing resin 9 will be described. Since the sealing resin 9 is applied to the resin frame 3a while the frame forming resin 3 is in an uncured state, it is desirable that these two types of resins have a property of not mixing with each other. In order to satisfy this requirement, the present embodiment uses a combination of the frame forming resin 3 and the sealing resin 9 as described below.
[0016]
First, an epoxy resin having a thixo ratio of 2.2 to 2.4 is preferably used as the frame forming resin 3, and a low thixo ratio having a thixo ratio of 1.1 to 1.2 is preferably used as the sealing resin 9. Use epoxy resin. The thixo ratio is a characteristic value that indicates the ease of flow of a viscous fluid. Using an E-type viscometer, the measured value obtained under the condition of 0.5 rotation is calculated using the measured viscosity obtained under the condition of 5 rotations. It is defined by the divided ratio. That is, the larger the thixotropic ratio is, the more difficult the viscous fluid is to flow.
[0017]
By using a resin having a large thixo ratio as a resin for forming a frame and using a resin having a small thixo ratio as a sealing resin, even when two kinds of resins come into contact with each other in an uncured state, two kinds of resins can be obtained. Are not easily mixed. Therefore, the sealing resin 9 is not mixed with the resin frame 3a and does not spread outward, so that the function as the flow prevention frame is secured.
[0018]
Next, as shown in FIG. 2B, the application nozzle 8a of the dispenser 8B moves to the application start point PS (see FIG. 3A) within the application range. Then, while discharging the sealing resin 9 in the flowing state from the application nozzle 8a, the sealing resin 9 moves along the inner periphery of the resin frame 3a according to the application trajectory shown in FIG. Apply. In this application operation, the application is repeated while sequentially shifting the application trajectory inward according to the required application amount, and the required amount of the sealing resin 9 is applied. As a result, as shown in FIGS. 2C and 3B, a resin bank 9a in which the sealing resin 9 is applied in a continuous bank shape is formed near the inner periphery of the resin frame 3a. Forming operation).
[0019]
In the formation of the resin bank, the sealing resin 9 is not applied to the central portion in the application range, and the upper surface of the semiconductor element 5 remains exposed. In this coating operation, since it is not necessary to make the coating height uniform, high-speed coating in which the large-diameter coating nozzle 8a is moved at a high speed can be adopted as a coating condition.
[0020]
Next, a resin coating forming operation for covering the entire surface of the resin frame 3a with the sealing resin 9 will be described with reference to FIG. Here, in a state where the discharge of the sealing resin 9 from the application nozzle 8a is stopped, the application nozzle 8a is brought into contact with the resin bank 9a according to the application locus shown in FIG. Is repeated. That is, as shown in FIG. 4B, the sealing resin 9 in the vicinity of the upper surface of the resin bank 9a is attached to the tip of the application nozzle 8a, and is moved to the upper surface of the semiconductor element 5 by the movement of the application nozzle 8a.
[0021]
By repeating the scraping of the sealing resin 9 over the entire area inside the resin frame 3a, the entire surface inside the resin frame 3a is covered with the sealing resin 9 as shown in FIG. motion). Further, this resin forming operation can be performed at high speed because it is not necessary to adjust the discharge amount of the sealing resin 9.
[0022]
Next, the substrate 1 after the resin sealing step is sent to a heating furnace. By heating at a temperature higher than the thermosetting temperature of the frame forming resin 3 and the sealing resin 9 for a predetermined time, both the frame forming resin 3 and the sealing resin 9 are hardened almost at the same time (resin hardening). Process). Thus, an electronic component in which the semiconductor element 5 is mounted on the substrate 1 and the semiconductor element 5 is sealed with a resin is completed.
[0023]
FIG. 5 shows a cross section of the electronic component manufactured as described above. In the present embodiment, when the sealing resin 9 is applied to the inside of the resin frame 3a by the application nozzle 8a as described above, the resin bank 9a is formed near the inner periphery of the resin frame 3a. Since the sealing resin 9 is not discharged to the portion, the coating shape by the conventional coating method of discharging the sealing resin 9 to the entire surface inside the resin frame 3a, that is, the sealing resin 9 rises in the resin frame 3a due to the surface tension and is formed at the center. The convex shape in which the portion is higher than the surroundings can be avoided.
[0024]
Therefore, the application height h1 of the sealing resin 9 after resin sealing is suppressed to substantially the same height as the resin frame 3a as shown in FIG. 5, and does not become excessively high. This makes it possible to realize a thin electronic component by minimizing the thickness dimension of the electronic component after resin sealing. Further, according to the present embodiment, the application shape (the cross-sectional shape in the vertical direction) of the sealing resin 9 is a concave shape in which the vicinity of the center is lower than the periphery. For this reason, when compared with the same amount of resin, the effect of increasing the bending rigidity of the entire electronic component when a bending external force acts on the substrate 1 and improving the strength against breakage can be obtained.
[0025]
In the above embodiment, the frame forming resin 3 and the sealing resin 9 are simultaneously thermoset, but after the flow prevention frame forming step shown in FIG. Here, the frame forming resin 3 may be cured (first resin curing step) to form the solidified resin frame 3a, and the sealing resin 9 may be applied in the resin frame 3a. In this case, after the resin sealing step, the substrate 1 is sent to the heating furnace again to cure the sealing resin 9 (second resin curing step).
[0026]
By adopting such a method, it is necessary to repeat heating to the same substrate twice, and the process becomes complicated, but two kinds of different thixotropic ratios are used as the frame forming resin 3 and the sealing resin 9. There is no need to use a combination of resins, and only the same type of resin material need be prepared.
[0027]
【The invention's effect】
According to the present invention, in the resin sealing step after mounting the semiconductor element, the application nozzle is moved along the inner circumference of the flow prevention frame while discharging the sealing resin from the application nozzle, thereby moving the inner circumference of the flow prevention frame. A resin levee forming operation for forming a resin levee in which a sealing resin is applied in a continuous levee shape in the vicinity, and after the application nozzle is brought into contact with the resin levee while the discharge of the sealing resin from the application nozzle is stopped. The operation to move in the inward direction of the embankment is repeated to perform the resin coating forming operation to cover the entire surface of the flow prevention frame with the sealing resin, enabling the use of a large-diameter coating nozzle and shortening the coating time. In addition, the height of the central portion of the application surface can be kept low, and the shape after sealing can be made thin.
[Brief description of the drawings]
FIG. 1A is a plan view of an electronic component according to an embodiment of the present invention. FIG. 1B is a cross-sectional view of the electronic component according to an embodiment of the present invention. FIG. FIG. 3 is an explanatory view of a process of a manufacturing method. FIG. 3 is an explanatory view of a process of an electronic component manufacturing method according to an embodiment of the present invention. FIG. 4 is an explanatory view of a process of an electronic component manufacturing method according to an embodiment of the present invention. Sectional view of an electronic component according to an embodiment of the present invention.
REFERENCE SIGNS LIST 1 substrate 3 frame forming resin 3a resin frame 5 semiconductor element 8a application nozzle 9 sealing resin 9a resin bank

Claims (4)

半導体素子を基板に実装しこの半導体素子を樹脂封止して成る電子部品を製造する電子部品製造方法であって、基板に前記半導体素子を実装する半導体素子実装工程と、半導体素子実装後の基板の上面に前記半導体素子を囲んで枠形成用樹脂を塗布することにより封止樹脂の塗布範囲外への流動を防止する流動防止枠を形成する流動防止枠形成工程と、前記流動防止枠の内側へ流動状態の封止樹脂を供給することにより前記半導体素子を封止樹脂で覆って封止する樹脂封止工程とを含み、前記樹脂封止工程において、塗布ノズルから封止樹脂を吐出させながらこの塗布ノズルを流動防止枠の内側で移動させることにより流動防止枠の内周近傍に封止樹脂が連続した堤状に塗布された樹脂堤を形成する樹脂堤形成動作と、塗布ノズルからの封止樹脂の吐出を停止した状態で塗布ノズルを前記樹脂堤に接触させた後にこの塗布ノズルを樹脂堤の内側方向へ移動させる動作を反復することにより流動防止枠内全面を封止樹脂で覆う樹脂被覆形成動作とを行うことを特徴とする電子部品製造方法。An electronic component manufacturing method for manufacturing an electronic component by mounting a semiconductor element on a substrate and sealing the semiconductor element with a resin, comprising: a semiconductor element mounting step of mounting the semiconductor element on a substrate; and a substrate after mounting the semiconductor element. A flow-preventing frame forming step of forming a flow-preventing frame that prevents the sealing resin from flowing out of the application range by applying a frame-forming resin around the semiconductor element on the upper surface of the flow-preventing frame; A resin sealing step of covering the semiconductor element with a sealing resin to seal the semiconductor element by supplying the sealing resin in a fluid state to the sealing resin, and discharging the sealing resin from an application nozzle in the resin sealing step. By moving the application nozzle inside the flow prevention frame, a resin levee forming operation of forming a resin levee in which the sealing resin is applied in a continuous levee shape near the inner periphery of the flow prevention frame, and sealing from the application nozzle. Stop After the application of the oil is stopped, the application nozzle is brought into contact with the resin bank, and then the operation of moving the application nozzle inward of the resin bank is repeated, thereby covering the entire surface of the flow prevention frame with the sealing resin. And a forming operation. 前記樹脂封止工程後に枠形成用樹脂および封止樹脂を硬化させる樹脂硬化工程とを含むことを特徴とする請求項１記載の電子部品製造方法。2. The method for manufacturing an electronic component according to claim 1, further comprising: a resin curing step of curing the frame forming resin and the sealing resin after the resin sealing step. 前記流動防止枠形成工程後に枠形成用樹脂を硬化させる第１の樹脂硬化工程と、前記樹脂封止工程後に封止樹脂を硬化させる第２の樹脂硬化工程とを含むことを特徴とする請求項１記載の電子部品製造方法。The method according to claim 1, further comprising: a first resin curing step of curing the frame forming resin after the flow preventing frame forming step; and a second resin curing step of curing the sealing resin after the resin sealing step. 2. The method for manufacturing an electronic component according to 1. 半導体素子を基板に実装しこの半導体素子を樹脂封止して成る電子部品であって、基板に前記半導体素子を実装する半導体素子実装工程と、半導体素子実装後の基板の上面に前記半導体素子を囲んで枠形成用樹脂を塗布することにより封止樹脂の塗布範囲外への流動を防止する流動防止枠を形成する流動防止枠形成工程と、前記流動防止枠の内側へ流動状態の封止樹脂を供給することにより前記半導体素子を封止樹脂で覆って封止する樹脂封止工程とを含み、前記樹脂封止工程において、塗布ノズルから封止樹脂を吐出させながらこの塗布ノズルを流動防止枠の内側で移動させることにより流動防止枠の内周近傍に封止樹脂が連続した堤状に塗布された樹脂堤を形成する樹脂堤形成動作と、塗布ノズルからの封止樹脂の吐出を停止した状態で塗布ノズルを前記樹脂堤に接触させた後にこの塗布ノズルを樹脂堤の内側方向へ移動させる動作を反復することにより流動防止枠内全面を封止樹脂で覆う樹脂被覆形成動作とを行う電子部品の製造方法によって製造されたことを特徴とする電子部品。An electronic component in which a semiconductor element is mounted on a substrate and the semiconductor element is sealed with a resin, and a semiconductor element mounting step of mounting the semiconductor element on the substrate, A flow-preventing frame forming step of forming a flow-preventing frame for preventing the flow of the sealing resin out of the application range by applying a frame-forming resin around the sealing resin; A resin sealing step of covering and sealing the semiconductor element with a sealing resin by supplying the sealing resin. The resin embankment forming operation to form a resin embankment in which the sealing resin is applied in a continuous embankment shape near the inner periphery of the flow prevention frame by moving inside the flow prevention frame, and the discharge of the encapsulating resin from the application nozzle is stopped. In state After the cloth nozzle is brought into contact with the resin bank, the operation of moving the application nozzle inward of the resin bank is repeated to perform a resin coating forming operation of covering the entire surface of the flow prevention frame with the sealing resin. An electronic component manufactured by a manufacturing method.
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JP2022079733A (en) * 2018-07-20 2022-05-26 日亜化学工業株式会社 Light emitting device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196657A (en) * 2005-01-13 2006-07-27 New Japan Radio Co Ltd Manufacturing method of semiconductor device
JP2018085540A (en) * 2018-01-29 2018-05-31 Ｔｏｗａ株式会社 Resin spraying method, resin sealing method of resin sealed component, resin spraying device, resin sealing device of resin sealed component, and device for manufacturing resin seal molding
JP2022079733A (en) * 2018-07-20 2022-05-26 日亜化学工業株式会社 Light emitting device
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