JP3438456B2 - Semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to formation of a sealing resin for semiconductor devices.

[0002]

2. Description of the Related Art Recently, in a method of sealing a semiconductor device,
It is known to use a tape carrier package (hereinafter referred to as TCP) shape that is assembled using a tape auto bonding method (hereinafter referred to as TAB method). As an example of the semiconductor device in which the TCP is used, a semiconductor device for a liquid crystal driver, which is intended to realize miniaturization and thinning, can be cited.

A conventional semiconductor device will be described below with reference to FIG. FIG. 7 shows a conventional semiconductor device, FIG. 7A is a cross-sectional view showing the configuration of the semiconductor device before the encapsulation resin 3 is formed, and FIG. It is sectional drawing which shows the structure of the semiconductor device which the stop process was completed.

As shown in FIG. 7, reference numeral 5 denotes a semiconductor element. A bump 8 is formed on a bonding pad portion (not shown) of the semiconductor element 5, and one end of the inner lead 6 is connected via the bump 8. It is connected to the semiconductor element 5. Also,
The other of the inner leads 6 is bonded to the base film 2. The base film 2 and the inner leads 6 are called a tape carrier, and the opening of the base film 2 is called a device hole 4. 3 is a sealing resin, A
It is for protecting the joint portion of the u bump 8 and integrally fixing the tape carrier 9 and the semiconductor element 5, and is formed so as to cover the joint portion of the semiconductor element 5, the inner lead 6, and the bump 8.

Next, a method of applying the sealing resin 3 will be described below with reference to FIGS. 5 and 6.

Typical methods for applying the sealing resin include a potting method and a printing method. First, a potting method applying apparatus will be described.

FIG. 5 is a diagram showing the structure of a potting type coating apparatus. Reference numeral 17 is a cylindrical syringe, and a nozzle 19 having a discharge port 18 is attached to the lower end thereof,
The inside can be filled with the sealing resin 3. A tube 20 is connected to the upper end of the syringe 17, and the tube 20 pressurizes the sealing resin 3 with which the inside of the syringe 17 is filled and supplies compressed air for discharging to the syringe 17. It is for doing. Syringe 17
Is fixed to a syringe fixing portion 22a of the XY stage 22, and the XY stage 2 is fixed to the XY stage 22.
A vertical movement device 23 that allows the vertical movement of 2 is attached. The XY stage 22 and the vertical movement device 23
Can be moved vertically and horizontally according to a preset program.

Since the structure of the semiconductor device 10 in FIG. 5 is the same as the structure of the semiconductor device shown in FIG. 7, its description is omitted here.

The operation of the potting type coating apparatus constructed as above will be described below.

First, the tip of the nozzle 19 is the semiconductor device 1.
The vertical movement device 23 moves the syringe 17 so that the syringe 17 is at a position suitable for applying the sealing resin 3 onto the surface of the syringe.
Next, the syringe 17 is moved in the horizontal direction by the XY stage 22, and at the same time, compressed air is supplied to the syringe 17 via the tube 20 to start the discharge of the sealing resin 3, and the semiconductor device 10 is discharged. Then, the sealing resin 3 is drawn. When the drawing is finished, the discharge of the sealing resin 3 is stopped,
The vertical movement device 23 returns the nozzle 19 to the initial position,
Complete the coating operation. The application area of the sealing resin 3 is adjusted by the discharge amount of the sealing resin 3, the moving speed of the nozzle 19, the drawing pattern of the nozzle 19, and the like.

Next, a printing type coating device will be described with reference to FIG. FIG. 6 is a diagram showing a part of the configuration of a printing type coating device. As shown in FIG. 6, reference numeral 24 is a metal mask, and an opening 26 is provided in a metal plate. Reference numeral 10 denotes a semiconductor device, which is similar to the semiconductor device shown in FIG. Reference numeral 25 denotes a squeegee, which is used to mount the sealing resin 3 on the semiconductor device 10, and is generally made of resin.

The operation of the coating apparatus constructed as above will be described below. First, the opening 26 of the metal mask 24 is aligned so as to come to an appropriate position of the semiconductor device 10. Next, the sealing resin 3 is applied to the metal mask 24.
Is applied to the vicinity of the opening 26. After that, by moving the squeegee 25 in parallel with the surface of the metal mask 24,
The sealing resin 3 placed on the metal mask 24 is opened 26
Further extrude and complete the coating work. The application area of the sealing resin 3 includes the shape of the opening 26, the thickness of the metal mask 24,
It is adjusted by the hardness of the squeegee 25, the pressure on the opening 26 of the squeegee 24, and the like.

[0013]

Along with the demand for miniaturization of semiconductor devices, there is a demand for a narrower sealing resin forming region. However, in the conventional semiconductor device, when the sealing resin is applied, the material of the sealing resin, the discharge amount of the sealing resin, the viscosity of the sealing resin, and the application of the sealing resin are controlled in order to control the flow amount of the sealing resin 3. Since a number of conditions such as the conditions (for example, the moving speed of the nozzle, the drawing pattern of the nozzle, the environmental conditions) are adjusted and determined, it is very difficult to narrow the encapsulation resin forming region.

For example, the inner lead 6 is the semiconductor element 5
In the portion extending to the
It is easy to flow to the back surface through the gap. However, when the encapsulating resin 3 flows on the back surface of the semiconductor device, the encapsulating resin 3 is unlikely to spread uniformly on the back surface because the inner leads 6 are interposed, and unfilling or bubbles are likely to occur. Since the coating conditions are determined in consideration of all situations as described above, there is a limit to the coating amount of the sealing resin, and it is very difficult to narrow the area.

The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a semiconductor device which can realize a narrowed region for forming a sealing resin.

[0016]

In order to solve the above problems, the present invention provides a dam on the base film in the peripheral portion of the device hole.

With this configuration, it is possible to provide a semiconductor device which can realize a narrowing of the sealing resin forming region.

The present invention has a base film having a device hole and a dam formed on the base film in the peripheral portion of the device hole, so that the sealing resin forming region can be narrowed. It has the effect that it can.

[0019]

According to the first aspect of the invention, a base film having a device hole, an inner lead formed on the base film, and a dam formed on the back surface of the base film in the peripheral portion of the device hole. A size of the device hole is smaller than that of the semiconductor element, and a semiconductor element arranged at a position overlapping with the device hole is filled with a gap between the device hole and the semiconductor element, and a tip portion of the inner lead and the The dam is configured on the base film between the base film and the semiconductor element, and the shape of the dam forms a gap between the device holes. With a surrounding shape and a device
The distance from the periphery of the chair is different and they are arranged alternately.
In addition to having the structure, the sealing resin forming region can be narrowed, and the gap between the base film and the semiconductor element can be maintained at a certain value or more.

According to a second aspect of the present invention, a base film having a device hole, an inner lead formed on the base film, and a dam formed on the back surface of the base film in the peripheral portion of the device hole. A size of the device hole is smaller than that of the semiconductor element, and a semiconductor element arranged at a position overlapping with the device hole is filled with a gap between the device hole and the semiconductor element, and a tip portion of the inner lead and the It is composed of a sealing resin that covers a junction with a semiconductor element, the dam is formed in a region where the base film and the semiconductor element do not overlap with each other in the peripheral portion of the device hole, and the dam covers the device hole. With a shape that surrounds with a gap ,
In addition, the distance from the periphery of the device hole is different and
It is characterized in that they are arranged side by side, and has an effect of making it possible to narrow the sealing resin forming region.

FIG. 1 shows an embodiment of the present invention.
~ It demonstrates with reference to FIG. 1A is a sectional view of a semiconductor device according to a first reference example of the present invention, and FIG. 1B is a bottom view thereof.

Reference numeral 1 denotes a dam, which is formed on the back surface of the base film 2. As a material for the dam 1, polyimide, epoxy resin, metal or the like can be used. In the first embodiment shown in FIG. 1, the dam 1 is the base film 2
Is formed around the device hole 4. The configurations of the base film 2, the semiconductor element 5, the inner leads 6, the bumps 8 and the tape carrier 9 are the same as the configurations of the conventional semiconductor device described with reference to FIG. The description is omitted.

The first reference example of the semiconductor device shown in FIG.
The size of the device hole 4 formed in the base film 2 is larger than that of the semiconductor element 5,
Generally, the bumps 8 are formed on the periphery of the semiconductor element 5. In addition, the bump 8 is formed in the center of the semiconductor element 5.
There is no problem even if there are formed.

In such a type of semiconductor device, since there is no region where the semiconductor element 5 and the base film 2 overlap with each other, the gap between the device hole 4 and the semiconductor element 5 is filled and the tip portion of the inner lead 6 is filled. The semiconductor element 5 and the base film 2 are fixed by covering the junction between the semiconductor element 5 and the semiconductor element 5. Such a semiconductor device in which the size of the device hole 4 is larger than the semiconductor element 5 is hereinafter referred to as a semiconductor device with a gap, and conversely, a semiconductor device in which the size of the device hole 4 is smaller than the semiconductor element 5 is a gap. It is referred to as a none type semiconductor device.

An example of a method of manufacturing the semiconductor device configured as described above will be described below.

First, a height of about 1 is formed by an electrolytic plating method on a bonding pad portion (not shown) which is an external lead electrode of the semiconductor element 5 with a barrier metal layer such as Ti or W interposed.
The bumps 8 of 5 to 20 μm made of Au are formed.
At this point, a plurality of semiconductor devices 5 are integrated, and after forming the bumps 8, the semiconductor devices 5 are cut and separated through an electrical characteristic inspection process to form individual semiconductor elements 5.

On the other hand, a Cu foil is attached to the surface of the base film 2, and the Cu foil is formed into a predetermined pattern by an etching method. After that, Sn plating of about several μm is applied by electroless plating to complete the inner leads 6. Also, on the back surface of the base film 2,
Dam 1 is formed. As a method of forming the dam 1, there is a printing method or an exposure etching method. Dam 1 formed
The height varies depending on the height of the sealing resin 3, but normally 1
About 0 to 50 μm is suitable.

Then, the semiconductor element 5 is arranged inside the device hole 4 of the base film 2, and the temperature is about 500.degree.
The bumps are heated and pressed under the condition of several tens of gf. The tips of the inner leads 6 protruding inside the device hole 4 and the Au bumps 8 are joined by a eutectic of Sn plated on the surface of the inner leads 6 and the Au bumps 8. In this way, the bonding of the inner lead 6 to the semiconductor element 5 (hereinafter referred to as ILB) is completed. Then, liquid epoxy resin is applied to the surface of the semiconductor element 5 and the vicinity of the inner leads 6 and cured to complete the sealing step.

Next, the encapsulating step for forming the encapsulating resin 3 of the semiconductor device described above will be described in more detail with reference to FIGS.

First, the sealing device will be briefly described with reference to the schematic view of the sealing device shown in FIG.

As shown in FIG. 4, the sealing device comprises a loader section 13, a coating section 15, a curing furnace 16 and an unloader section 14. The loader unit 13 and the unloader unit 14 are
Reels 12a and 12 can be installed respectively.

Incidentally, the semiconductor device 10 has a form in which a plurality of semiconductor devices 10 are connected, and the description will be made with reference to the semiconductor device before formation of the sealing resin shown in FIG. Base film for semiconductor devices 2
It is connected to and takes a form in which multiple pieces are connected. Therefore, the semiconductor device 10 can be wound around the reel 12.

The operation of the sealing process using the sealing device configured as described above will be described below.

The reel 12a has a sealing resin 3 shown in FIG.
The semiconductor device 10 before being formed is wound and installed in the loader unit 13. After that, the semiconductor devices 10 are sequentially sent to the coating section 15, and the sealing resin 3 is coated therein. Further, the semiconductor device 10 coated with the sealing resin 3
Is sent to the curing furnace 16, where the semiconductor device 10
Is heated and the sealing resin 3 is cured. The semiconductor device 10 after the curing process of the sealing resin 3 is sent to the unloader unit 14 and wound on the reel 12 there. The method for applying the sealing resin 3 in the applying section 15 is the same as the conventional applying method described with reference to FIG. 5 or FIG.
The description is omitted here.

As is clear from the above description, in the semiconductor device of the above embodiment, the dam 1 is provided on the back surface of the tape carrier 9, so that the sealing resin 3 can be prevented from flowing out, and the sealing resin 3 can be sealed. It is possible to narrow the resin forming region. In other words, when the maximum range of the coating area is determined, the provision of the dam 1 can provide a wider range of coating conditions than the case where the dam 1 is not provided.

For example, the application amount of the sealing resin 3 will be described as an example. It is assumed that the maximum area on the tape carrier 9 to which the sealing resin 3 may be applied is determined. By providing the dam 1, even if a larger amount of the sealing resin 3 is applied than is conventionally possible, the application area can be suppressed within the standard. Further, when the same amount of the sealing resin 3 is applied to the conventional semiconductor device having no dam 1 and the semiconductor device having the dam 1 in the above embodiment, the semiconductor device having the dam 1 in the above embodiment is applied. The device can narrow the application area.

Incidentally, the sealing resin 3 used in the printing type coating apparatus described with reference to FIG. 6 is better than the sealing resin 3 used in the potting type coating apparatus described with reference to FIG. It is generally high in viscosity. Therefore, the coating unit 15 in the sealing process described with reference to FIG.
In the case of using a printing type coating device, the coating unit 1
After the coating process is completed in 5, the semiconductor device 10 may be wound up by using the reel 12, and the hardening process may be performed in the hardening furnace 16 while being wound on the reel 12.

FIG . 2 shows a semiconductor device according to a second reference example of the present invention, FIG. 2 (a) is a sectional view thereof, and FIG. 2 (b) is a state before forming a sealing resin 3 and a semiconductor element 5. FIG.

The semiconductor device shown in FIG. 2 is a semiconductor device of the type without a gap, in which the size of the semiconductor element 5 is larger than the size of the device hole 4. The difference from the configuration of the semiconductor device of the type with a gap described above with reference to FIG. 1 is that the bump 8 is located inside the device hole 4 when the semiconductor element 5 is fixed to the tape carrier 9. This is a point that must be configured. Therefore, in the second reference example , as shown in FIG. 2, a type in which the bump 8 is formed in the central portion of the semiconductor element 5 will be described. It should be noted that in the semiconductor device of the type without a gap, the bump 8 is not always formed in the central portion of the semiconductor element 5, and at least the device hole 4 is formed.
It suffices if the bumps 8 are located in a region located inside.

Reference numeral 1 is a dam, which is formed in the peripheral portion of the device hole 4 on the back surface of the base film 2 and in a region overlapping with the semiconductor element 5. A plurality of projecting dams 1 are configured to surround the device hole 4. The other configurations are similar to those of the semiconductor device shown in FIG. 1, and therefore the same reference numerals are given and the description thereof is omitted.

In the semiconductor device of the second reference example configured as described above, the dam 1 is provided on the back surface of the tape carrier 9 as in the first reference example shown in FIG. The flow amount and flow direction of the resin 3 can be controlled, and the sealing resin forming region can be narrowed.

In addition, since the dam 1 is located between the base film 2 and the semiconductor element 5, it is possible to secure a certain distance (more than the height of the dam 1) between the base film 2 and the semiconductor element 5. It will be possible. Therefore, in the process of bending the inner lead 6 to connect the inner lead 6 to the bump 8, the base film 2 and the semiconductor element 5 are
It is possible to prevent the distance between and from becoming narrow. Since it is possible to prevent the gap between the base film 2 and the semiconductor element 5 from becoming narrow, the gap between the base film 2 and the semiconductor element 5 becomes narrow, so that the sealing resin 3 passes between the inner leads 6. As a result, it is possible to prevent the phenomenon that it becomes difficult to flow into the back surface of the base film 2 (the phenomenon in which the sealing resin 3 is not filled). In particular, in the printing method, since the sealing resin 3 having a high viscosity is generally used, the phenomenon that the sealing resin 3 is not filled is likely to occur, so that the effect is remarkable.

In the second reference example , the dam 1 and the semiconductor element 5 may come into contact with each other. Therefore, if a low hardness material is selected for the dam 1, the surface of the semiconductor element 5 will not be damaged.

Further, in the second reference example , since the dam 1 is formed in the region overlapping the semiconductor element 5, the dam 1 is covered with the sealing resin 3. Therefore, dam 1
Therefore, it is necessary to provide a gap and to allow the sealing resin 3 to flow out from the gap. However, even in the case of a semiconductor device of a type without a gap, such as the second reference example , when the dam 1 is formed in a region that does not overlap the semiconductor element 5, it is shown in FIG. The device hole 4 may be surrounded without any gap or may be provided with a gap.

[0046] Figure 3 is a diagram showing a structure of a semiconductor device according to an embodiment of the present invention, a bottom view of a prior to the formation of the sealing resin 3 and the semiconductor element 5. As shown in FIG. 3, dam 1
It has a structure in which are lined up alternately. Other configurations are similar to those of the semiconductor device shown in FIG.

The dam 1 may have various other configurations, but it is clear that the same effect can be obtained as long as the flow of the sealing resin can be controlled. Further, in the above embodiment, the dam 1 is formed only on the back surface, but the dam 1 is provided on the front surface of the tape carrier 9, so that the flow of the sealing resin 3 near or inside the area of the sealing resin 3 is caused. It can be anywhere as long as it can be controlled. However, drawings and description of the embodiment in which the dam 1 is provided on the surface of the tape carrier 9 are omitted.

[0048] As is clear from the above description, in the semiconductor device in the form of the above <br/> embodiment is capable of flow control of the sealing resin 3, a narrower area of the sealing resin forming region be able to.

The amount of the sealing resin 3 flowing out to the back surface can be variously controlled by changing the arrangement and size of the dam 1, and the present invention is not limited to the above-mentioned embodiment.

The material, forming method, shape, and number of the dam 1 are not limited to those in the above embodiment.

Further, in the above embodiment, the dam 1 is formed in the region away from the periphery of the device hole 4,
The dam 1 may be formed so as to contact the periphery of the device hole 4.

[0052]

According to the present invention, by providing the dam, the flow amount and flow direction of the sealing resin can be controlled. Therefore, it is possible to reduce the area of the sealing resin forming region.
In other words, the coating amount can have a wide range, and the management of the coating conditions becomes easy.

In addition, in the semiconductor device of the type without a gap, the distance between the base film and the semiconductor element can be maintained at a certain value or more, so that the distance between the base film and the semiconductor element becomes narrow, so that the sealing resin flows in. It is possible to obtain the effect that the phenomenon of not filling the sealing resin, which is difficult to occur, is less likely to occur. Also, in order to connect the inner lead to the die pad, depending on the pressure when bending the inner lead,
It is possible to prevent the gap between the base film and the semiconductor element from being narrowed, and it is possible to obtain the effect of facilitating the molding of the inner lead.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a semiconductor device according to a first reference example of the present invention.

FIG. 2 is a diagram showing a configuration of a semiconductor device according to a second reference example of the present invention.

Shows a configuration of a semiconductor device according to an embodiment of the present invention; FIG

FIG. 4 is a schematic view of a sealing device.

FIG. 5 is a diagram showing a configuration of a potting type coating device.

FIG. 6 is a diagram showing a part of the configuration of a printing type coating device.

FIG. 7 is a cross-sectional view showing the configuration of a conventional semiconductor device.

[Explanation of symbols]

1 dam 2 base film 3 Sealing resin 4 device holes 5 Semiconductor element 6 inner lead 8 bumps 9 tape carrier 10 Semiconductor device 12,12a reel 13 Loader section 14 Unloader section 15 Application section 16 curing furnace 17 syringes 18 outlets 19 nozzles 20 tubes 21 Solenoid valve 22 XY stage 23 Vertical movement device 24 metal mask 25 squeegee 26 opening

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-4-320052 (JP, A) JP-A-4-369231 (JP, A) JP-A-5-67698 (JP, A) JP-A-5- 343477 (JP, A) JP-A-6-85111 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/56 H01L 21/60 311 H01L 23/28

Claims (2)

(57) [Claims] 1. A base film having a device hole, an inner lead formed on the base film, a dam formed on the back surface of the base film at a peripheral portion of the device hole, and a size of the device hole. A semiconductor element that is smaller than a semiconductor element and that is arranged at a position overlapping the device hole, fills a gap between the device hole and the semiconductor element, and joins the tip portion of the inner lead and the semiconductor element. And a dam formed on the base film between the base film and the semiconductor element, and the shape of the dam has a shape surrounding the device hole with a gap. Oh it is, and, the periphery of the device hole
A semiconductor device characterized in that they are arranged alternately with different distances from each other . 2. A base film having a device hole, an inner lead formed on the base film, a dam formed on the back surface of the base film in the peripheral portion of the device hole, and a size of the device hole. A semiconductor element that is smaller than a semiconductor element and that is arranged at a position overlapping the device hole, fills a gap between the device hole and the semiconductor element, and joins the tip portion of the inner lead and the semiconductor element. And a shape in which the dam surrounds the device hole with a gap, and the dam is formed in an area where the base film and the semiconductor element do not overlap each other in the peripheral portion of the device hole. der is, and, device Ho
The distance from the periphery of the
A semiconductor device characterized by the above .