JP3951750B2 - Substance filling method, film forming method, device and device manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substance filling method, a film forming method, a device, and a device manufacturing method.
[0002]
[Prior art]
Generally, a semiconductor device is manufactured by forming a plurality of semiconductor elements on a substrate surface and forming a wiring pattern on an upper layer portion thereof. In FIG. 2A, a MOS transistor 12 is formed as a semiconductor element on the surface of a silicon substrate. Further, a silicon dioxide film is formed as an insulating film 15 on the surface. Then, a wiring pattern is formed on the surface of the insulating film 15 with ITO which is a conductive material. Here, since it is necessary to ensure conduction from the wiring pattern to the gate electrode 14, a minute recess (contact hole) 20 having a diameter of about 1 μm is formed from the surface of the insulating film 15 to the gate electrode 14. Therefore, as shown in FIG. 2 (2), a wiring pattern 28 made of ITO is formed on the surface of the silicon dioxide film while filling the fine recesses 20 with ITO.
[0003]
5 and 6 are explanatory views of a conventional wiring pattern forming method. Each of FIGS. 5 and 6 is an enlarged view of a portion A in FIG. Conventionally, in order to fill a fine recess with a conductive material, it has been considered that the filling material needs to be processed smaller than the diameter of the fine recess and injected into the fine recess. Therefore, as shown in FIG. 5 (2), the fine recesses 20 shown in FIG. 5 (1) are filled with ITO fine particles by sputtering. At the same time, an ITO film 27 is formed on the surface of the silicon dioxide film. Therefore, as shown in FIG. 5 (3), the surface of the ITO film 27 is polished by CMP or the like.
[0004]
Next, a wiring pattern 28 is formed from the ITO film 27. Specifically, as shown in FIG. 6A, a resist 30 is applied to the surface of the ITO film 27, and the resist 30 is patterned by photolithography. Next, as shown in FIG. 6B, the ITO film 27 is etched using the patterned resist 30 as a mask. Then, if the resist 30 is removed as shown in FIG. 6C, a wiring pattern 28 made of ITO is formed.
[0005]
[Problems to be solved by the invention]
In the above method, an ITO film is formed by sputtering. However, since sputtering requires a vacuum apparatus, there is a problem that a lot of manufacturing costs are required.
Further, in the above method, since the ITO material is filled in the fine recesses, it is necessary to perform sputtering for a relatively long time. Then, an ITO film having a thickness greater than the necessary thickness is formed on the surface of the member to be processed other than the fine recesses, and an operation of flattening by CMP (Chemical Mechanical Polishing) or the like is required. Since the abrasive used for this CMP is expensive, there is a problem that a lot of manufacturing costs are required after all.
[0006]
Furthermore, in the above method, it is necessary to perform patterning by etching the ITO film, but it is difficult to etch the ITO film. That is, since etching using a gas containing fluorine or chlorine cannot be performed, it is necessary to perform etching using an organic metal, iodine, or the like, and there is a problem that a large manufacturing cost is required.
[0007]
The present invention focuses on the above-described problems, and an object thereof is to provide a substance filling method and a film forming method capable of reducing the manufacturing cost. Another object of the present invention is to provide a substance filling method and a film forming method capable of cleaning or sealing the recess. In addition, it aims at provision of the device manufactured using said substance filling method and film forming method, and its manufacturing method.
[0008]
[Means for Solving the Problems]
  In order to achieve the above object, the material filling method according to the present invention is a solution in which a solute composed of a filling material in the recess is mixed with a solvent capable of dissolving the gas in the recess in a member to be processed having the recess. While the solution is supplied by the liquid supply means filled with the liquid, the liquid supply means and the surface of the member to be processed are moved relative to each other, the opening of the recess is covered with an amount of liquid capable of dissolving the gas in the recess, and the gas in the recess is Filling the recess with a liquid by dissolving in the solvent, filling the recess with the solution, and then heating the solution to evaporate the solvent, thereby filling and solidifying the solute in the recess. It is characterized by. As a result, the liquid can be filled in the recess without making the liquid into fine particles, so that the manufacturing cost can be reduced. In addition, it is possible to supply an amount of liquid that can dissolve all the gas in the recesses, and fill the recesses with a single liquid, supplying a small amount of liquid multiple times, and dividing the recesses into multiple times. It is also possible to fill the interior with a liquid.
[0009]
  The ink jet nozzle is relatively moved along the opening of the recess with respect to the surface of the processing member having the recess, and is composed of a solute composed of a substance filling the recess and a solvent capable of dissolving the gas in the recess. Supplying the solution onto the recess, covering the opening of the recess with the solution, dissolving the gas in the recess in the solvent, and filling the solution in the recess; and in the recess After filling the solution, the solution is heated to evaporate the solvent, whereby the solute is filled and solidified in the recess. In this case, since a required amount of liquid can be continuously supplied by the liquid supply means, the manufacturing cost can be reduced. The member to be processed may be a film having a recess in addition to a silicon substrate or a glass substrate. The coating is, for example, an interlayer insulating film, passivation, or a photosensitive film such as a resist.
[0010]
  The aboveGas-soluble solventMay be configured to be an organic solvent. Since the organic solvent has a property of dissolving air, it can be replaced with air in the recess. Therefore, filling work in the air becomes possible, and the manufacturing cost can be reduced.it can.
[0011]
  The solute isThe structure may be a conductive material. The conductive material may be ITO. In addition, raw materials such as an interlayer insulating film, passivation, or a photosensitive film such as a resist can be used as the solute. Thereby, a solute substance can be filled in the recess.
[0012]
The surface of the member to be processed having the recess may be preliminarily liquid repellent before filling the recess with the liquid. When the surface of the member to be treated is subjected to the liquid repellent treatment, the liquid is not applied, but even if the inside of the concave portion is subjected to the liquid repellent treatment, the gas in the concave portion is replaced with the liquid, so that the liquid can be filled. Therefore, the liquid can be filled only in the recess.
[0013]
  On the other hand, according to the present inventionDevice is a semiconductor deviceOr an electric circuit, a display pair module, a color filter, a light emitting element, or the like.
[0014]
  On the other hand, the film forming method according to the present invention is a film forming method in which a film is formed in a recess on the surface of a member to be processed. In the film forming method, a solute composed of a filling material for film formation in the recess is dissolved in a solvent capable of dissolving the gas in the recess. While the solution is supplied by the liquid supply means filled with the mixed solution, the liquid supply means and the surface of the member to be processed are moved relative to each other, and the recess opening is covered with an amount of liquid that can dissolve the gas in the recess. By dissolving the gas in the recess in the solvent, the recess is filled with a liquid, and the solution is heated to evaporate the solvent, thereby forming a film made of the film material in the recess of the member to be processed. The configuration.
[0015]
Thus, the film material can be filled in the recess simultaneously with the film formation without forming the liquid into fine particles. Note that a required amount of liquid can be continuously supplied by the liquid supply means. In addition, the film material can be efficiently filled into the plurality of recesses and potential recesses. Therefore, the manufacturing cost can be reduced.
[0016]
The liquid may be applied to the surface of the member to be processed with a desired thickness by adjusting the distance between the liquid supply port of the liquid supply means and the surface of the member to be processed. The liquid supply unit and the surface of the member to be processed may be relatively moved, and the liquid may be applied to the surface of the member to be processed with a desired thickness by adjusting the speed of the relative movement. Moreover, it is good also as a structure which apply | coats the said liquid by the desired thickness to the said to-be-processed member surface by adjusting the liquid supply amount from the said liquid supply means. As a result, polishing processing by CMP or the like on the film surface becomes unnecessary, and the manufacturing cost can be reduced.
[0017]
Further, before applying the liquid to the surface of the member to be processed, a part other than the film forming part on the surface of the member to be processed may be subjected to a liquid repellent treatment in advance. Further, before the liquid is applied to the surface of the member to be processed, a film forming portion on the surface of the member to be processed may be subjected to a lyophilic process in advance. Thereby, the etching after film formation becomes unnecessary, and the manufacturing cost can be reduced.
[0018]
The film material may be a conductive film material or an ITO film material. In particular, the manufacturing cost can be significantly reduced by eliminating the need for etching after forming the ITO film.
The film material may be a film material having electrical insulation or a silicon oxide film material.
[0019]
On the other hand, the device according to the present invention is configured to be manufactured using the substance filling method according to any one of claims 8 to 11. The device can be a semiconductor device, an electric circuit, a display module, a color filter, a light emitting element, or the like.
[0020]
  On the other hand, the device manufacturing method according to the present invention is a device manufacturing method in which a liquid material is filled in a recess of a member to be processed to form a film, and the film is formed in the recess in a solvent capable of dissolving the gas in the recess. While supplying the solution by the liquid supply means filled with the solution mixed with the solute composed of the filling material, the liquid supply means and the surface of the member to be processed are relatively moved to dissolve the gas in the recess. The recess material is covered with the film material by dissolving the gas in the recess in the solvent, filling the recess with a liquid, and heating the solution to evaporate the solvent. A film was formed. Thereby, manufacturing cost can be reduced.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Preferred embodiments of a substance filling method, a film forming method, a device and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings. Note that what is described below is only one aspect of the embodiment of the present invention, and the present invention is not limited thereto.
[0022]
First, the first embodiment will be described. FIG. 1 is an explanatory diagram of a substance filling method according to the first embodiment. In the substance filling method according to the first embodiment, the liquid supply means 5 and the surface of the member 1 to be processed are relatively supplied to the surface of the member 1 having the fine recesses 2 while the liquid 6 is supplied by the liquid supply means 5. By moving and covering the opening 2a of the fine recess 2 with the liquid 6 capable of dissolving the gas in the fine recess 2, the gas in the fine recess 2 is dissolved in the liquid 6, and the liquid 6 is contained in the fine recess 2. Is to be filled.
[0023]
In the first embodiment, the liquid 6 is filled into the fine recess 2 formed in the member 1 to be processed. In addition, the to-be-processed member 1 may be a film having fine recesses in addition to a silicon substrate or a glass substrate. The coating is, for example, an interlayer insulating film, passivation, or a photosensitive film such as a resist. The diameter of the fine recess 2 is, for example, about 4 μm. The liquid 6 is a substance capable of dissolving the gas in the fine recess 2, and for example, when the gas in the fine recess 2 is air, the liquid 6 can be an organic solvent. The organic solvent is suitable because it has good gas solubility, but is not particularly limited thereto, and other gas-soluble solvents such as aqueous solutions may be used. On the other hand, a slit type liquid supply means is used as the liquid supply means 5. The slit type liquid supply means has a slit-like liquid supply port 5a extending in the thickness direction of the paper surface, and is formed so that the liquid 6 can be continuously supplied from the liquid supply port 5a. The opening width W of the liquid supply port 5a is, for example, about 0.3 mm, and the length (depth) is, for example, about 150 to 500 mm. An ink jet may be used instead of the slit type liquid supply means.
[0024]
Then, as shown in FIG. 1 (1), the liquid supply means 5 is disposed above the member 1 to be processed. The distance between the liquid supply means 5 and the surface of the member 1 to be processed is, for example, about 0.2 mm. Next, the liquid 6 is discharged from the liquid supply port 5a. The discharged liquid 6 is spread radially on the surface of the member 1 to be processed. In addition, when the surface of the member 1 to be processed has liquid repellency, the discharged liquid 6 has a substantially spherical shape with a diameter of about 4 mm, for example. Next, the liquid supply means 5 is moved in the direction of the arrow 8 while continuously supplying the liquid 6 from the liquid supply port 5a. The moving speed is, for example, 5 mm / s. Then, the liquid 6 is applied to the surface of the member 1 to be processed.
[0025]
Then, as shown in FIG. 1 (2), the liquid supply means 5 is moved to a position facing the fine recess 2. As a result, the liquid 6 covers the opening 2 a of the fine recess 2. Here, for example, when the gas in the fine recess 2 is air and the liquid 6 is an organic solvent, the organic solvent has a property of dissolving air, so the gas in the fine recess 2 is dissolved in the liquid 6. In addition, since the volume of the fine recessed part 2 is very small, the liquid quantity of the liquid 6 supplied continuously is an amount which can melt | dissolve all the gas in the fine recessed part 2. FIG. Accordingly, when all the gas in the fine recess 2 is dissolved in the liquid 6, as shown in FIG. 1 (3), the gas in the fine recess 2 is replaced with the liquid 6, and the liquid 6 is filled in the fine recess 2. Is done.
[0026]
In FIG. 1, the liquid supply means 5 is disposed above the member 1 to be processed and the liquid 6 is discharged downward. However, the liquid supply means 5 is disposed below the member 1 to be processed and the liquid is directed upward. 6 may be discharged. Even in this case, since the gas in the fine recess 2 is dissolved in the liquid 6, the liquid can be filled in the fine recess 2.
[0027]
In the substance filling method according to the first embodiment described above, the liquid supply means 5 and the surface of the member 1 to be processed are supplied to the surface of the member 1 having the fine recesses 2 while supplying the liquid 6 by the liquid supply means 5. The liquid 6 is filled in the fine recess 2 by covering the opening 2a of the fine recess 2 with an amount of the liquid 6 capable of dissolving the gas in the fine recess 2. As a result, the liquid can be filled into the fine recesses without being atomized. Note that a required amount of liquid can be continuously supplied by the liquid supply means. Further, the liquid can be efficiently filled into the plurality of fine concave portions and the potential fine concave portions. Therefore, the manufacturing cost can be reduced.
[0028]
In addition, if the organic solvent which has the property to melt | dissolve air is used as the liquid 6, it will become possible to fill a fine recessed part in an air atmosphere, and can reduce manufacturing cost. Moreover, when the organic solvent etc. which have the washing | cleaning effect | action of the to-be-processed member 1 are used as the liquid 6, the inside of the fine recessed part 2 with the surface of the to-be-processed member 1 can be wash | cleaned. As an example in that case, ozone water etc. are mentioned, for example.
[0029]
Further, when a solute organic solvent solution or the like is used as the liquid 6, after the liquid 6 is filled in the fine recess 2, the member to be processed is heated to evaporate the organic solvent. The solute can be solidified. As the solute, a conductive material such as ITO, an interlayer insulating film, a passivation, or a photosensitive film such as a resist can be used.
[0030]
In addition, before performing the substance filling method according to the first embodiment described above, the surface of the member 1 to be processed can be subjected to liquid repellent treatment in advance. As a specific liquid repellent treatment, a fluororesin polymer film or the like may be formed on the surface of the member 1 to be treated. Thereby, the liquid 6 apply | coated to the to-be-processed member 1 surface can be removed easily. Even if the liquid repellent treatment is performed in the fine recess 2 at the same time as the surface of the member 1 to be processed, the gas in the fine recess 2 is replaced with the liquid 6, so that the liquid 6 is filled in the fine recess 2. be able to. As a result, the liquid 6 can be filled only in the fine recess 2. Then, various substrates and various coatings can be repaired by evaporating the filled organic solvent and solidifying the solute in the fine recesses 2.
[0031]
Next, a second embodiment will be described. 3 and 4 are explanatory views of the film forming method according to the second embodiment. Each of FIGS. 3 and 4 is an enlarged view of a portion A in FIG. The film forming method according to the second embodiment is a method of forming a wiring pattern with ITO, and an organic solvent solution 26 of an ITO coating material is supplied to the insulating film 15 having the fine recesses 20 by a liquid supply means. Meanwhile, the liquid supply means is relatively moved to apply the liquid 26 to the surface of the insulating film 15, and the opening of the fine recess 20 is covered with an amount of the liquid 26 that can dissolve the gas in the fine recess 20. Thus, after the gas in the fine recesses is dissolved in the liquid 26 and the liquid 26 is filled in the fine recesses 20, the liquid 26 is heated to evaporate the organic solvent. A wiring pattern is formed by the ITO coating, and the ITO coating material is solidified in the fine recesses 20. Note that the description of the same configuration as in the first embodiment is omitted.
[0032]
In FIG. 2A, a MOS transistor 12 is formed as a semiconductor element on the surface of a substrate 10 such as silicon. In the MOS transistor 12, a gate electrode 14 is formed of polysilicon or the like, and an insulating film 15 is formed of a silicon oxide film or the like on the surface thereof. Since the wiring pattern is formed on the surface of the insulating film 15, it is necessary to ensure conduction from the gate electrode 14 to the wiring pattern. Therefore, a minute recess (contact hole) 20 is formed in the insulating film 15 on the gate electrode 14. In the second embodiment, as shown in FIG. 2B, the fine recesses 20 are filled with conductive ITO, and a wiring pattern made of ITO is formed on the surface of the insulating film 15.
[0033]
ITO is made of indium oxide (In₂O_Three) Tin oxide (SnO)₂) Is doped with 1 to 5% by weight. In the second embodiment, a liquid in which ultrafine ITO particles are dispersed in an organic solvent is used. That is, in the present invention, the liquid includes a liquid material in which, for example, ultrafine particles of ITO are dispersed in an organic solvent as described above. In addition, the liquid (2-10% of tin (Sn) addition) which melt | dissolved dibutyltin diacetate (DBTDA) and indium acetylacetonate (InAA) in the organic solvent can also be used. Organic solvents include octane (C₈H₁₈), Ethanol, higher alcohols having 5 or more carbon atoms, or organic esters such as n-butyl acetate can be used and diluted to a concentration of about 0.02 mol / L. The configuration of the liquid supply means is the same as that in the first embodiment.
[0034]
Next, a specific procedure of the film forming method according to the second embodiment will be described with reference to FIGS. 3 and 4 are enlarged views of a portion A in FIG.
[0035]
First, the entire surface of the insulating film 15 shown in FIG. Specifically, as shown in FIG. 3B, a fluororesin polymer film 22 having liquid repellency with respect to the organic solvent is formed on the entire surface of the insulating film 15. In addition, what is necessary is just to have liquid repellency with respect to an organic solvent, for example, you may form a silicone resin polymer film etc. other than a fluororesin polymer film. Note that a film having volatility with respect to electromagnetic waves such as ultraviolet rays is preferably formed. As a raw material liquid for fluoropolymer film, C_FourF_TenOr C₈F₁₈A liquid organic material composed of linear PFC such as is used. When this linear PFC gas is turned into plasma, the linear PFC is activated, and reaches the surface of the insulating film 15 and polymerizes, whereby a fluororesin polymer film is formed on the surface of the insulating film 15.
[0036]
Next, as shown in FIG. 3 (3), a lyophilic process is performed on the wiring pattern forming portion on the surface of the insulating film 15. Specifically, the fluororesin polymer film 22 formed in the wiring pattern forming portion is irradiated with ultraviolet rays. The bond of the fluororesin polymer film 22 is cut and removed by irradiation with ultraviolet rays. In addition, organic substances and the like attached to the part are also decomposed and removed. Thereby, lyophilicity with respect to the organic solvent is imparted to the wiring pattern forming portion on the surface of the insulating film 15 including the fine recess 20. In other words, the liquid repellent treatment is performed on the portion other than the wiring pattern forming portion.
[0037]
Next, as shown in FIG. 4A, a liquid 26 in which ultrafine particles of ITO are dispersed in an organic solvent is applied to the surface of the insulating film 15. The specific method is the same as in the first embodiment. First, the liquid 26 is discharged from the liquid supply port of the liquid supply means, and its tip is brought into contact with one end portion of the surface of the insulating film 15. Next, the liquid supply means is moved to apply the liquid 26 to the surface of the insulating film 15 (see FIG. 1A). Next, the liquid supply means is moved to a position facing the fine recess 20 (see FIG. 1 (2)). And the liquid 26 is filled in the fine recessed part 20 (refer FIG. 1 (3)). Thereafter, the liquid supply means is moved to the other end of the surface of the insulating film 15 to apply the liquid 26 to the entire surface of the insulating film 15.
[0038]
Here, since the liquid repellent treatment with respect to the organic solvent is performed on portions other than the wiring pattern forming portion on the surface of the insulating film 15, the liquid 26 hardly remains. The slightly remaining liquid can be easily removed by tilting the member to be processed. As a result, the liquid 26 is applied only to the wiring pattern forming portion. In addition, since the liquid 26 is applied in the raised state due to the liquid repellency of the fluororesin polymer film 22 at the end of the wiring pattern forming portion, the liquid 26 can be applied thicker than the fluororesin polymer film 22.
[0039]
When applying the liquid 26 to the surface of the insulating film 15, the thickness of the liquid 26 to be applied can be adjusted by adjusting the distance between the liquid supply port of the liquid supply means and the surface of the insulating film 15. it can. The thickness of the liquid 26 to be applied can also be adjusted by adjusting the speed of relative movement between the liquid supply means and the surface of the insulating film 15. The thickness of the liquid 26 to be applied can also be adjusted by adjusting the amount of liquid supplied from the liquid supply means. Then, by adjusting the thickness of the liquid 26 to be applied, a film having a desired thickness can be obtained after the liquid 26 is dried.
[0040]
In order to fill the liquid 26 in the fine recess 20, it is necessary to supply an amount of the liquid 26 that can dissolve the gas in the fine recess 20. Therefore, a sufficient amount of liquid can be supplied by reducing the distance between the liquid supply port of the liquid supply means and the surface of the insulating film at a position facing the fine recess 20. A sufficient amount of liquid can also be supplied by reducing the relative movement speed between the liquid supply means and the insulating film surface at a position facing the fine recess 20. A sufficient amount of liquid can also be supplied by increasing the amount of liquid supplied from the liquid supply means at a position facing the fine recess 20. It is also possible to supply a small amount of liquid a plurality of times and fill the fine recesses with the liquid in a plurality of times.
[0041]
Next, as shown in FIG. 4B, the liquid 26 is dried. Specifically, the organic solvent contained in the liquid 26 is evaporated by heating. In addition, in order to avoid generation | occurrence | production of the void in a pattern film, drying temperature shall be the temperature below the boiling point of an organic solvent. For example, when the organic solvent is octane, since the boiling point is about 170 ° C., heating is performed at 150 ° C. or less for 5 minutes or more in a nitrogen atmosphere. Next, an annealing process is performed. The annealing temperature of ITO is, for example, 500 ° C. or higher.
[0042]
Next, as shown in FIG. 4 (3), the fluororesin polymer film 22 is removed. Specifically, as in the lyophilic treatment described above, the fluororesin polymer film is decomposed and removed by irradiating with ultraviolet rays. Thus, the wiring pattern 28 made of ITO is formed.
[0043]
By the film forming method according to the second embodiment described above, a wiring pattern made of ITO is formed on the surface of the insulating film, and ITO is filled in the fine recesses. Conventionally, ITO has been filled in the fine recesses by sputtering that requires a vacuum device, and an ITO film has been formed on the surface of the insulating film.
[0044]
However, in the film forming method according to the second embodiment, the organic solvent solution of the ITO coating material is supplied to the surface of the processing target member having the fine recesses by the liquid supply means, and the liquid supply means is relatively moved. The liquid is applied to the surface of the processing member, and the liquid is filled in the fine recess by covering the opening of the fine recess with an amount of the liquid that can dissolve the gas in the fine recess. By heating and evaporating the organic solvent, an ITO film was formed on the surface of the member to be processed, and the ITO film material was filled in the fine recesses.
[0045]
Thus, the coating material can be filled in the fine recesses simultaneously with the film formation without forming the liquid into fine particles. Note that a required amount of liquid can be continuously supplied by the liquid supply means. In addition, the coating material can be efficiently filled into the plurality of fine recesses and potential fine recesses. Therefore, the manufacturing cost can be reduced.
[0046]
Conventionally, the surface of the ITO film has been polished by CMP or the like to adjust the film thickness, so that there has been a problem that a large production cost is required. However, in the film forming method according to the second embodiment, the liquid supply means is adjusted by adjusting the distance between the liquid supply port of the liquid supply means and the surface of the member to be processed, and by adjusting the speed of the relative movement. The liquid was supplied to the surface of the member to be processed with a desired thickness by adjusting the amount of liquid supplied from the substrate. This eliminates the need for polishing by CMP or the like on the surface of the coating, thereby reducing the manufacturing cost.
[0047]
Conventionally, patterning is performed by etching the ITO film, and thus there is a problem that a lot of manufacturing costs are required. However, in the film forming method according to the second embodiment, the portions other than the film forming portion on the surface of the member to be processed are subjected to liquid repellent treatment in advance, and the film forming portion on the surface of the member to be processed is subjected to lyophilic treatment in advance. The configuration. This eliminates the need for etching after forming the ITO film, and can greatly reduce the manufacturing cost.
[0048]
In addition, in 2nd Embodiment, although the case where an organic solvent solution of ITO film material was used and a wiring pattern was formed by ITO was demonstrated, the organic solvent solution of aluminum or a copper film material was used in addition to this. The wiring pattern can also be formed of aluminum or copper. In addition, an interlayer insulating film can be formed and repaired using an organic solvent solution of an insulating film material such as silicon dioxide. On the other hand, in the second embodiment, the fine recesses are filled in an air atmosphere. However, if the fine recesses are filled in a carbon dioxide atmosphere or a nitrogen atmosphere having a higher solubility in an organic solvent, the coating material can be more reliably filled. An organic solvent solution can be filled into the fine recesses.
[0049]
The structure in which the functional thin film is formed on the substrate by the material filling method and the film forming method in the fine recess according to the present invention is, for example, a device such as a semiconductor device, an electric circuit, a display module, and a light emitting element. Applies to An example is shown in FIGS. For example, FIG. 7 is a schematic view of a semiconductor device, an electric circuit, and a display module, and FIG. 8 is a schematic view of a microstructure in which a light emitting element is formed, for example. In FIG. 7, the functional thin film 214 of the semiconductor device and the electric circuit is mainly a metal thin film of a wiring pattern, for example, and the functional thin film 214 of the display module is, for example, an organic molecular film of a color filter. Although an example of a color filter is shown in FIG. 7, there is no difference in forming another functional thin film using the film forming method of the present invention. In FIG. 8, a functional thin film 214 of the light emitting element is, for example, an organic EL (electroluminescence) thin film used for the light emitting layer. The device is formed by sandwiching the functional thin film 214 therebetween. Needless to say, the electrode can also be formed by using the film forming method of the present invention. The thickness of the functional thin film 214 is arbitrary depending on the intended use of the microstructure, but is preferably 0.02 to 4 μm. Those to which the film forming method of the present invention is applied are of high quality, and the manufacturing process is simplified and the manufacturing cost is superior to the conventional method.
[0050]
【The invention's effect】
  The substance filling method according to the present invention is a liquid supply means in which a member to be processed having a recess is filled with a solution in which a solute composed of the filler is mixed with a solvent capable of dissolving the gas in the recess. The liquid supply means and the surface of the member to be processed are moved relative to each other while supplying the solution, and the recess opening is covered with an amount of liquid capable of dissolving the gas in the recess.
Since the recess is filled with the liquid by dissolving the gas in the recess in the solvent, the manufacturing cost can be reduced.
[0051]
  Further, the film forming method according to the present invention is a film forming method for forming a film in a recess on the surface of a member to be processed. In the film forming method, a solute comprising a filling material for film formation in the recess is dissolved in a solvent capable of dissolving the gas in the recess. While the solution is supplied by the liquid supply means filled with the mixed solution, the liquid supply means and the surface of the member to be processed are moved relative to each other, and the recess opening is covered with an amount of liquid that can dissolve the gas in the recess. By dissolving the gas in the recess in the solvent, the recess is filled with a liquid, and the solution is heated to evaporate the solvent, thereby forming a film made of the film material in the recess of the member to be processed. Since it was set as the structure, manufacturing cost can be reduced.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram of a substance filling method according to a first embodiment.
FIG. 2 is an explanatory diagram of a wiring pattern, where (1) is a state before the wiring pattern is formed, and (2) is a state after the wiring pattern is formed.
FIG. 3 is a first explanatory view of a film forming method according to a second embodiment.
FIG. 4 is a second explanatory diagram of the film forming method according to the second embodiment.
FIG. 5 is a first explanatory view of a film forming method according to a conventional technique.
FIG. 6 is a second explanatory diagram of a film forming method according to the prior art.
FIG. 7 is a first explanatory diagram of a microstructure.
FIG. 8 is a second explanatory diagram of a microstructure.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ......... To-be-processed member, 2 ...... Fine recessed part, 2a ...... Opening part, 5 ...... Liquid supply means, 5a ...... Liquid supply port, 6 ...... Liquid, 8 ...... Arrow, DESCRIPTION OF SYMBOLS 10 ......... Substrate, 12 ......... MOS transistor, 14 ......... Gate electrode, 15 ......... Insulating film, 20 ......... Fine recess, 22 ......... Fluoropolymer polymer film, 26 ......... Liquid, 27 ……… ITO coating, 28 ……… Wiring pattern, 30 ……… Resist. 211... Substrate, 214... Functional thin film, 215... Transparent electrode, 220.

Claims (13)

While supplying a solution to a member to be processed having a recess by supplying a solution by a liquid supply means in which a solvent in which a gas in the recess is dissolved is mixed with a solute composed of a substance filling the recess, the liquid is supplied. The relative movement of the means and the surface of the member to be processed, the recess opening is covered with an amount of liquid capable of dissolving the gas in the recess,
Filling the recess with liquid by dissolving the gas in the recess in the solvent,
A method of filling a substance, wherein after filling the recess with the solution, the solution is heated to evaporate the solvent to fill and solidify the solute in the recess. A solution composed of a solute composed of a substance filling the recess and a solvent capable of dissolving the gas in the recess by moving the inkjet nozzle relative to the surface of the member having the recess along the opening of the recess. Supplying the concave portion;
Covering the opening of the recess with the solution, dissolving the gas in the recess in the solvent, and filling the solution in the recess;
A method of filling a substance, wherein after filling the recess with the solution, the solution is heated to evaporate the solvent to fill and solidify the solute in the recess. The method for filling a substance according to claim 1, wherein the gas-soluble solvent is an organic solvent. Before filling the recess into the solution,
4. The substance filling method according to claim 1, wherein the surface of the member to be processed having the concave portion is subjected to a liquid repellent treatment in advance. A device manufactured using the material filling method according to claim 1. In the film forming method of forming a film in the recesses on the surface of the processing target member
While supplying the solution by the liquid supply means in which the solvent in which the gas in the recess can be dissolved is mixed with the solute composed of the filling material for film formation in the recess, the liquid supply means, the surface of the member to be processed, The relative opening is moved, and the recess opening is covered with an amount of liquid capable of dissolving the gas in the recess,
Filling the recess with liquid by dissolving the gas in the recess in the solvent,
A film forming method comprising: forming a film made of the film material in a concave portion of the member to be processed by heating the solution and evaporating the solvent. The liquid is applied to the surface of the member to be processed at a desired thickness by adjusting a distance between the liquid supply port of the liquid supply unit and the surface of the member to be processed. The film formation method of description. The liquid is applied to the surface of the member to be processed at a desired thickness by relatively moving the liquid supply unit and the surface of the member to be processed and adjusting the speed of the relative movement. 7. The film forming method according to 6. The film forming method according to claim 6, wherein the solution is applied to the surface of the member to be processed with a desired thickness by adjusting a solution supply amount from the liquid supply unit. Before applying the solution to the surface of the member to be processed,
10. The film forming method according to claim 6, wherein a portion other than the film forming portion on the surface of the member to be processed is subjected to a liquid repellent treatment in advance. Before applying the solution to the surface of the member to be processed,
The film forming method according to claim 6, wherein a film forming portion on the surface of the member to be processed is subjected to lyophilic treatment in advance. A device manufactured using the film forming method according to claim 6. In a method for manufacturing a device in which a liquid material is filled in a recess of a member to be processed to form a film,
While supplying the solution by the liquid supply means in which the solvent in which the gas in the recess can be dissolved is mixed with the solute composed of the filling material for film formation in the recess, the liquid supply means, the surface of the member to be processed, The relative opening is moved, and the recess opening is covered with an amount of liquid capable of dissolving the gas in the recess,
Filling the recess with liquid by dissolving the gas in the recess in the solvent,
A device manufacturing method, comprising: forming a film made of the film material on the surface of the member to be processed by heating the solution and evaporating the solvent.

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