JP4187681B2 - 一体型光変換器アセンブリおよびそれを形成する方法 - Google Patents
一体型光変換器アセンブリおよびそれを形成する方法 Download PDFInfo
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- JP4187681B2 JP4187681B2 JP2004159191A JP2004159191A JP4187681B2 JP 4187681 B2 JP4187681 B2 JP 4187681B2 JP 2004159191 A JP2004159191 A JP 2004159191A JP 2004159191 A JP2004159191 A JP 2004159191A JP 4187681 B2 JP4187681 B2 JP 4187681B2
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- 238000000034 method Methods 0.000 title description 19
- 239000000758 substrate Substances 0.000 claims description 55
- 230000005693 optoelectronics Effects 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 22
- 230000003287 optical effect Effects 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000004642 Polyimide Substances 0.000 claims description 12
- 229920001721 polyimide Polymers 0.000 claims description 12
- 239000011230 binding agent Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
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- 230000008569 process Effects 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 239000000835 fiber Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Communication System (AREA)
- Light Receiving Elements (AREA)
Description
102 基板
104 光電子(O/E)アレイ
106 光電子デバイス
108 高速チップ
110 信号処理チップ
112 CMOSチップ
114 信号層
116 サブユニット
118 位置合わせ穴
200 コネクタ/ケーブル・アセンブリ
202 フェルール
204 位置合わせピン
206 光ファイバ
302 埋込み領域
304 SiGe回路領域
306 層
400 バルクO/Eアレイ
402 半導体基板
404 コンタクト・パッド
406 上部表面
408 底部表面
410 トレンチ・パターン
412 エラストマ高分子材料
Claims (5)
- セラミック材料、シリコン材料および有機材料の1つを含む基板と、
前記基板に装着され、前記基板と異なる熱膨張係数を有するIII−V族化合物材料で形成される光電子アレイと、
前記基板上で前記光電子アレイに近接して配設され、前記光電子アレイとの信号インターフェース用に構成された高速チップと、
前記基板上で前記光電子アレイに近接して配設された符号化/復号化チップと、
前記基板上で前記光電子アレイに近接して配設された1つまたは複数のコンピュータ処理チップと
を備える一体型光変換器アセンブリであって、
前記光電子アレイが、互いに結合して単一アレイを形成する複数の個別のサブユニットをさらに含み、前記複数のサブユニットがx−yグリッド構成としてポリイミド結合剤を用いて充填したポリイミドで互いに結合し、前記ポリイミドにより、前記複数のサブユニット間の元の位置合わせが維持され、前記サブユニットの各々が、それに付随する規定数の個別の光電子素子を含む、アセンブリ。 - シリコン基板と、
前記基板に装着され、前記基板と異なる熱膨張係数を有するIII−V族化合物材料で形成される光電子アレイと、
前記基板内で前記光電子アレイに近接して埋め込まれ、前記光電子アレイとの信号インターフェース用に構成された高速回路と、
前記基板内で前記光電子アレイに近接して埋め込まれた符号化/復号化チップと、
前記基板内で前記光電子アレイに近接して埋め込まれた1つまたは複数のコンピュータ処理チップと
を備える一体型光変換器アセンブリであって、
前記光電子アレイが、互いに結合して単一アレイを形成する複数の個別のサブユニットをさらに含み、前記複数のサブユニットがx−yグリッド構成としてポリイミド結合剤を用いて充填したポリイミドで互いに結合し、前記ポリイミドにより、前記複数のサブユニット間の元の位置合わせが維持され、前記サブユニットの各々が、それに付随する規定数の個別の光電子素子を含む、アセンブリ。 - 前記個別の光電子素子が、VCSEL(垂直共振器面発光レーザ)、フォトダイオードおよび上記の少なくとも1つを含む組合せのうち1つをさらに含む、請求項1または2のいずれか1項に記載の光変換器アセンブリ。
- 前記基板中に配置され、前記光電子アレイの両端に隣接して配設された1対の位置合わせピンをさらに備え、さらに前記位置合わせピンが、光コネクタの対応する1対の位置合わせ穴に挿入されるように構成される、請求項1または2のいずれか1項に記載の光変換器アセンブリ。
- 前記光電子アレイがフリップ・チップ結合で前記基板に装着される、請求項1または2のいずれか1項に記載の光変換器アセンブリ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/250,050 US6963119B2 (en) | 2003-05-30 | 2003-05-30 | Integrated optical transducer assembly |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004363594A JP2004363594A (ja) | 2004-12-24 |
JP4187681B2 true JP4187681B2 (ja) | 2008-11-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004159191A Expired - Lifetime JP4187681B2 (ja) | 2003-05-30 | 2004-05-28 | 一体型光変換器アセンブリおよびそれを形成する方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6963119B2 (ja) |
JP (1) | JP4187681B2 (ja) |
CN (1) | CN100385755C (ja) |
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2003
- 2003-05-30 US US10/250,050 patent/US6963119B2/en not_active Expired - Fee Related
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2004
- 2004-05-21 CN CNB2004100453629A patent/CN100385755C/zh not_active Expired - Fee Related
- 2004-05-28 JP JP2004159191A patent/JP4187681B2/ja not_active Expired - Lifetime
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US20210313478A1 (en) * | 2018-12-27 | 2021-10-07 | Solarpaint Ltd. | Flexible Photovoltaic Cell, and Methods and Systems of Producing It |
US11978815B2 (en) * | 2018-12-27 | 2024-05-07 | Solarpaint Ltd. | Flexible photovoltaic cell, and methods and systems of producing it |
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JP2004363594A (ja) | 2004-12-24 |
CN100385755C (zh) | 2008-04-30 |
US20040241892A1 (en) | 2004-12-02 |
US6963119B2 (en) | 2005-11-08 |
CN1574521A (zh) | 2005-02-02 |
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