JP4177293B2 - 半導体接合ウエハ - Google Patents
半導体接合ウエハ Download PDFInfo
- Publication number
- JP4177293B2 JP4177293B2 JP2004162002A JP2004162002A JP4177293B2 JP 4177293 B2 JP4177293 B2 JP 4177293B2 JP 2004162002 A JP2004162002 A JP 2004162002A JP 2004162002 A JP2004162002 A JP 2004162002A JP 4177293 B2 JP4177293 B2 JP 4177293B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- temperature
- wafer
- bonding
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- 238000002309 gasification Methods 0.000 claims description 7
- 239000005416 organic matter Substances 0.000 claims description 6
- 230000000116 mitigating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 60
- 230000000052 comparative effect Effects 0.000 description 21
- 239000013078 crystal Substances 0.000 description 19
- 230000007547 defect Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- 239000011800 void material Substances 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000009864 tensile test Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- -1 moisture Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004162002A JP4177293B2 (ja) | 2003-07-23 | 2004-05-31 | 半導体接合ウエハ |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003278314 | 2003-07-23 | ||
| JP2004162002A JP4177293B2 (ja) | 2003-07-23 | 2004-05-31 | 半導体接合ウエハ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005057247A JP2005057247A (ja) | 2005-03-03 |
| JP2005057247A5 JP2005057247A5 (enExample) | 2005-07-21 |
| JP4177293B2 true JP4177293B2 (ja) | 2008-11-05 |
Family
ID=34380036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004162002A Expired - Lifetime JP4177293B2 (ja) | 2003-07-23 | 2004-05-31 | 半導体接合ウエハ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4177293B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008235776A (ja) * | 2007-03-23 | 2008-10-02 | Sumco Corp | 貼り合わせウェーハの製造方法 |
-
2004
- 2004-05-31 JP JP2004162002A patent/JP4177293B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005057247A (ja) | 2005-03-03 |
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