JP4167576B2 - 半導体素子収納用パッケージおよび半導体装置 - Google Patents
半導体素子収納用パッケージおよび半導体装置 Download PDFInfo
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- JP4167576B2 JP4167576B2 JP2003333863A JP2003333863A JP4167576B2 JP 4167576 B2 JP4167576 B2 JP 4167576B2 JP 2003333863 A JP2003333863 A JP 2003333863A JP 2003333863 A JP2003333863 A JP 2003333863A JP 4167576 B2 JP4167576 B2 JP 4167576B2
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- Prior art keywords
- semiconductor element
- lead
- flat plate
- frame
- plate portion
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- 239000004065 semiconductor Substances 0.000 title claims description 124
- 238000003860 storage Methods 0.000 title claims description 8
- 239000000919 ceramic Substances 0.000 claims description 60
- 239000000725 suspension Substances 0.000 claims description 30
- 230000008878 coupling Effects 0.000 claims description 20
- 238000010168 coupling process Methods 0.000 claims description 20
- 238000005859 coupling reaction Methods 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000035882 stress Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 9
- 238000005219 brazing Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 230000004308 accommodation Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
例えば、セラミック枠体11がアルミナ質焼結体から成る場合、先ず酸化アルミニウム(Al2O3),酸化珪素(SiO2),酸化マグネシウム(MgO)および酸化カルシウム(CaO)等の原料粉末に適当な有機バインダ,可塑剤,溶剤等を添加混合して泥漿状となし、これに従来周知のドクターブレード法やカレンダーロール法等のテープ成形技術を採用することにより複数のセラミックグリーンシートを得る。
2:平板部
2a:載置部
3:リード端子部
4:吊りリード部
5:円孔
5a:中心
6:結合部
11:セラミック枠体
11a:メタライズ配線層
11b:メタライズ層
11c:貫通孔
12:蓋体
13:半導体素子
Claims (2)
- 上側主面に半導体素子を載置するための載置部を有する平板部と、該平板部から延出して前記平板部の周囲のリードフレームに結合された吊りリード部と、前記リードフレームの前記吊りリード部の延長線上に設けられた円孔と、前記リードフレームの内周面から前記平板部に向けて延出したリード端子部と、上面に凹部が形成されるとともに該凹部の底面の中央部から下面にかけて貫通孔が形成されたセラミック枠体と、前記凹部の内側から下面の外周部にかけて形成されたメタライズ配線層と、前記下面の前記貫通孔の周囲に形成されたメタライズ層とを具備しており、前記平板部の前記載置部が前記セラミック枠体によって取り囲まれるように前記平板部の上側主面の外周部が前記メタライズ層にロウ付けされるとともに、前記リード端子部と前記メタライズ配線層とが電気的に接続された半導体素子収納用パッケージであって、前記吊りリード部と前記リードフレームとの結合部は、前記吊りリード部から前記リードフレームに向かって漸次幅が広くなっており、前記円孔は、一部が前記結合部に入り込んでいるとともに中心が前記結合部の外側に位置していることを特徴とする半導体素子収納用パッケージ。
- 請求項1記載の半導体素子収納用パッケージと、前記載置部に載置されるとともに前記メタライズ配線層に電気的に接続された半導体素子と、前記セラミック枠体の上面に前記凹部を塞ぐように取着された蓋体とを具備していることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003333863A JP4167576B2 (ja) | 2003-09-25 | 2003-09-25 | 半導体素子収納用パッケージおよび半導体装置 |
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JP2003333863A JP4167576B2 (ja) | 2003-09-25 | 2003-09-25 | 半導体素子収納用パッケージおよび半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005101328A JP2005101328A (ja) | 2005-04-14 |
JP4167576B2 true JP4167576B2 (ja) | 2008-10-15 |
Family
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JP2003333863A Expired - Fee Related JP4167576B2 (ja) | 2003-09-25 | 2003-09-25 | 半導体素子収納用パッケージおよび半導体装置 |
Country Status (1)
Country | Link |
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JP (1) | JP4167576B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010034212A (ja) | 2008-07-28 | 2010-02-12 | Toshiba Corp | 高周波セラミックパッケージおよびその作製方法 |
-
2003
- 2003-09-25 JP JP2003333863A patent/JP4167576B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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JP2005101328A (ja) | 2005-04-14 |
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