JP4163654B2 - 走査電子顕微鏡 - Google Patents
走査電子顕微鏡 Download PDFInfo
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- JP4163654B2 JP4163654B2 JP2004122668A JP2004122668A JP4163654B2 JP 4163654 B2 JP4163654 B2 JP 4163654B2 JP 2004122668 A JP2004122668 A JP 2004122668A JP 2004122668 A JP2004122668 A JP 2004122668A JP 4163654 B2 JP4163654 B2 JP 4163654B2
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- wafer
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- 238000012937 correction Methods 0.000 claims description 42
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 235000012431 wafers Nutrition 0.000 description 135
- 239000000126 substance Substances 0.000 description 62
- 238000007689 inspection Methods 0.000 description 44
- 239000000523 sample Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 238000010187 selection method Methods 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 6
- 239000011163 secondary particle Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000012634 optical imaging Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
以下、図面を用いて本発明の実施の形態を詳細に説明する。図1は、本発明による走査電子顕微鏡の一例の構成を示す図である。なお、以下走査電子顕微鏡を例にとって説明を行うが、これを光学的撮像装置の画像を用いることもできる。この場合、明視野光学系の画像を用いることも、暗視野光学系の画像を用いることも可能である。また、これらを組み合わせて、最初の特定の数点を選択する時は、明視野または暗視野光学系の画像を用い、それ以降はSEM画像を用いることもできる。この場合、最初の座標系間の大きなオフセットを画像領域の広い光学系撮像装置の画像を用いることで、より効果的に短時間に実行することが可能となる。これらは任意に組み合わせることが可能である。
ステップS5、S6、S10、S11に示した異物の選択方法は以下のように実施することもできる。図6にこのフローチャートを示す。
Claims (4)
- 試料を保持して移動する移動ステージを有し、他の装置で取得された前記試料上の特徴物に関する試料座標系の座標値を座標変換式で変換して得られた、補正座標系における座標値の示す場所に前記移動ステージを移動して前記特徴物を観察する機能を有する走査電子顕微鏡において、
前記試料上の中央に近い前記特徴物を初点として、前記試料の中央から遠ざかる方向に略螺旋状に前記試料上の特徴物を選択する手段を有することを特徴とする走査電子顕微鏡。 - 前記座標変換式は、前記他の装置で取得された前記試料上の複数の特徴物に関する前記試料座標系における座標値と、当該特徴物が実際に観察された前記走査電子顕微鏡の試料座標系における座標値との誤差が最小になるように設定されたものであることを特徴とする請求項1記載の走査電子顕微鏡。
- 前記特徴物選択手段において、前記試料上を、前記試料上の中央を囲む複数の閉じた各々交わらない境界線により複数の領域に分割し、前記複数の領域のうち、中央の領域から外部に順に領域を選択し、同時に各領域に含まれる前記特徴物を選択していくことを特徴とする、請求項1又は2に記載の走査電子顕微鏡。
- 前記特徴選択手段が、特定の条件が満たされれば、自動的に選択を終了するステップを有することを特徴とする請求項1記載の走査電子顕微鏡。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004122668A JP4163654B2 (ja) | 2004-04-19 | 2004-04-19 | 走査電子顕微鏡 |
US11/103,654 US7307254B2 (en) | 2004-04-19 | 2005-04-12 | Scanning electron microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004122668A JP4163654B2 (ja) | 2004-04-19 | 2004-04-19 | 走査電子顕微鏡 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005310428A JP2005310428A (ja) | 2005-11-04 |
JP4163654B2 true JP4163654B2 (ja) | 2008-10-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004122668A Expired - Lifetime JP4163654B2 (ja) | 2004-04-19 | 2004-04-19 | 走査電子顕微鏡 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7307254B2 (ja) |
JP (1) | JP4163654B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7355709B1 (en) * | 2004-02-23 | 2008-04-08 | Kla-Tencor Technologies Corp. | Methods and systems for optical and non-optical measurements of a substrate |
JP4231831B2 (ja) * | 2004-08-30 | 2009-03-04 | 株式会社日立ハイテクノロジーズ | 走査型電子顕微鏡 |
JP2007071803A (ja) * | 2005-09-09 | 2007-03-22 | Hitachi High-Technologies Corp | 欠陥観察方法及びその装置 |
JP5255319B2 (ja) * | 2007-04-26 | 2013-08-07 | 株式会社日立ハイテクノロジーズ | 欠陥観察装置、および欠陥観察方法 |
US10177048B2 (en) * | 2015-03-04 | 2019-01-08 | Applied Materials Israel Ltd. | System for inspecting and reviewing a sample |
JP6705777B2 (ja) * | 2017-07-10 | 2020-06-03 | ファナック株式会社 | 機械学習装置、検査装置及び機械学習方法 |
US11294164B2 (en) | 2019-07-26 | 2022-04-05 | Applied Materials Israel Ltd. | Integrated system and method |
US11062875B2 (en) * | 2019-10-14 | 2021-07-13 | City University Of Hong Kong | Imaging apparatus and related control unit |
JP2022066928A (ja) * | 2020-10-19 | 2022-05-02 | 日本電子株式会社 | 座標リンケージシステム及び座標リンケージ方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3958078A (en) * | 1974-08-30 | 1976-05-18 | Ithaco, Inc. | X-ray inspection method and apparatus |
US5189481A (en) * | 1991-07-26 | 1993-02-23 | Tencor Instruments | Particle detector for rough surfaces |
JP3130222B2 (ja) * | 1995-02-14 | 2001-01-31 | 三菱電機株式会社 | 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法 |
US6067164A (en) * | 1996-09-12 | 2000-05-23 | Kabushiki Kaisha Toshiba | Method and apparatus for automatic adjustment of electron optics system and astigmatism correction in electron optics device |
US6122562A (en) * | 1997-05-05 | 2000-09-19 | Applied Materials, Inc. | Method and apparatus for selectively marking a semiconductor wafer |
US5985680A (en) * | 1997-08-08 | 1999-11-16 | Applied Materials, Inc. | Method and apparatus for transforming a substrate coordinate system into a wafer analysis tool coordinate system |
JPH11167893A (ja) * | 1997-12-05 | 1999-06-22 | Hitachi Ltd | 走査電子顕微鏡 |
US6850646B1 (en) * | 1997-12-31 | 2005-02-01 | Cognex Corporation | Fast high-accuracy multi-dimensional pattern inspection |
JP3715150B2 (ja) | 1998-10-27 | 2005-11-09 | 株式会社日立製作所 | 画像自動収集装置およびその方法 |
US6368763B2 (en) * | 1998-11-23 | 2002-04-09 | U.S. Philips Corporation | Method of detecting aberrations of an optical imaging system |
JP3071418B1 (ja) * | 1999-01-28 | 2000-07-31 | 株式会社半導体先端テクノロジーズ | 座標修正装置 |
US6205364B1 (en) * | 1999-02-02 | 2001-03-20 | Creo Ltd. | Method and apparatus for registration control during processing of a workpiece particularly during producing images on substrates in preparing printed circuit boards |
JP3934854B2 (ja) * | 2000-05-29 | 2007-06-20 | 株式会社日立製作所 | 走査電子顕微鏡 |
JP3671822B2 (ja) * | 2000-07-26 | 2005-07-13 | 株式会社日立製作所 | 欠陥検査方法および欠陥検査システム |
US6829035B2 (en) * | 2002-11-12 | 2004-12-07 | Applied Materials Israel, Ltd. | Advanced mask cleaning and handling |
US7408154B2 (en) * | 2004-10-29 | 2008-08-05 | Hitachi High-Technologies Corporation | Scanning electron microscope, method for measuring a dimension of a pattern using the same, and apparatus for correcting difference between scanning electron microscopes |
-
2004
- 2004-04-19 JP JP2004122668A patent/JP4163654B2/ja not_active Expired - Lifetime
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2005
- 2005-04-12 US US11/103,654 patent/US7307254B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7307254B2 (en) | 2007-12-11 |
US20050236569A1 (en) | 2005-10-27 |
JP2005310428A (ja) | 2005-11-04 |
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