JP4126517B2 - 気相加工装置 - Google Patents

気相加工装置 Download PDF

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Publication number
JP4126517B2
JP4126517B2 JP10080499A JP10080499A JP4126517B2 JP 4126517 B2 JP4126517 B2 JP 4126517B2 JP 10080499 A JP10080499 A JP 10080499A JP 10080499 A JP10080499 A JP 10080499A JP 4126517 B2 JP4126517 B2 JP 4126517B2
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Japan
Prior art keywords
gas
voltage
substrate
etching
film
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Expired - Fee Related
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JP10080499A
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English (en)
Japanese (ja)
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JP2000294542A (ja
JP2000294542A5 (https=
Inventor
英雄 山中
喜久夫 貝瀬
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Sony Corp
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Sony Corp
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Priority to JP10080499A priority Critical patent/JP4126517B2/ja
Priority to US09/544,803 priority patent/US6592771B1/en
Publication of JP2000294542A publication Critical patent/JP2000294542A/ja
Publication of JP2000294542A5 publication Critical patent/JP2000294542A5/ja
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Publication of JP4126517B2 publication Critical patent/JP4126517B2/ja
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JP10080499A 1999-04-08 1999-04-08 気相加工装置 Expired - Fee Related JP4126517B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10080499A JP4126517B2 (ja) 1999-04-08 1999-04-08 気相加工装置
US09/544,803 US6592771B1 (en) 1999-04-08 2000-04-07 Vapor-phase processing method and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10080499A JP4126517B2 (ja) 1999-04-08 1999-04-08 気相加工装置

Publications (3)

Publication Number Publication Date
JP2000294542A JP2000294542A (ja) 2000-10-20
JP2000294542A5 JP2000294542A5 (https=) 2006-03-23
JP4126517B2 true JP4126517B2 (ja) 2008-07-30

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ID=14283585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10080499A Expired - Fee Related JP4126517B2 (ja) 1999-04-08 1999-04-08 気相加工装置

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JP (1) JP4126517B2 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6905079B2 (en) * 2000-09-08 2005-06-14 Tokyo Electron Limited Shower head structure and cleaning method thereof
JP2002246311A (ja) * 2001-02-19 2002-08-30 Sony Corp 多結晶性半導体薄膜及びその形成方法、半導体装置及びその製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
JP2002261010A (ja) * 2001-03-01 2002-09-13 Sony Corp 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
JP4599734B2 (ja) * 2001-03-14 2010-12-15 ソニー株式会社 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法
JP2002294450A (ja) * 2001-03-29 2002-10-09 Sony Corp 多結晶性半導体薄膜の形成方法、半導体装置の製造方法、並びにこれらの方法の実施に使用する装置
JP4599746B2 (ja) * 2001-04-04 2010-12-15 ソニー株式会社 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法
JP2005236038A (ja) * 2004-02-19 2005-09-02 Ushio Inc 処理装置
JP4340727B2 (ja) 2005-09-02 2009-10-07 東京応化工業株式会社 終点検出方法及び終点検出装置、並びに終点検出装置を備えた気相反応処理装置
JP5135710B2 (ja) * 2006-05-16 2013-02-06 東京エレクトロン株式会社 成膜方法及び成膜装置
JP5236983B2 (ja) * 2007-09-28 2013-07-17 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びプログラム記憶媒体
JP4920631B2 (ja) * 2008-04-28 2012-04-18 シャープ株式会社 半導体装置の製造方法
JP2009111397A (ja) * 2008-11-04 2009-05-21 Canon Anelva Corp 付着膜のエッチング法
JP2009044190A (ja) * 2008-11-07 2009-02-26 Canon Anelva Corp 付着膜のエッチング法

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Publication number Publication date
JP2000294542A (ja) 2000-10-20

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