JP4108773B2 - IC chip sealing method - Google Patents

IC chip sealing method Download PDF

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Publication number
JP4108773B2
JP4108773B2 JP03482096A JP3482096A JP4108773B2 JP 4108773 B2 JP4108773 B2 JP 4108773B2 JP 03482096 A JP03482096 A JP 03482096A JP 3482096 A JP3482096 A JP 3482096A JP 4108773 B2 JP4108773 B2 JP 4108773B2
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Japan
Prior art keywords
chip
substrate
gap
sealing
horizontal plane
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JP03482096A
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Japanese (ja)
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JPH09232347A (en
Inventor
浩平 圓地
朗 壁下
真司 金山
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83102Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92122Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector

Description

【0001】
【発明の属する技術分野】
本発明は、IC実装におけるフリップチップ実装工程およびMCM実装工程に関するものである。
【0002】
【従来の技術】
近年、IC実装におけるフリップチップ実装工程およびMCM(マルチチップモジュール)実装工程での、封止工程は大きく分けて、2種類の方法がある。
【0003】
第1の方法はICチップ装着後、封止を行う方法として一般的に行われているもので、図5(a)、(b)に示す方法である。この方法は、ICチップ2がフリップチップ(出力端子が突起上にバンプ付けされたICチップを直接基板の端子に接続する方法)されたIC基板3をステージ4上に水平に置き、ディスペンスノズル1をその出口断面が基板と平行になるように配置し、例えば移動軌跡Lのように、ノズル1をICチップ2の面上を移動させ封止剤6を塗布してICチップ2の全面を覆うもので、側面部からの封止剤6の入り込みにより封止が行なわれる。ディスペンスノズル1としては、手動方式、エアー圧力またはピストンポンプまたは電動回転スクリューの圧力で容器内部の封止剤6を容器の出力部に送り、針状のノズルの先端から封止剤6を吐出するものが使用される。
【0004】
第2の方法は、図6に示すように、基板3上に封止剤を塗らずにフリップチップされたICチップ2の側面外側からディスペンスノズル1を、ICチップ2及び基板3に触れず、かつ、ICチップ2から側方への所定距離9及びIC基板3から上方への所定距離10(ICチップの隙間7よりも大きく、ICチップの厚み+ICチップの隙間の合計距離8よりも小さい距離)を保って移動しながら、吐出した封止剤6をICチップ2の外側面全周に塗布することにより、封止剤6の濡れ性だけで、隙間7に封止剤6を入り込ませるものである。
【0005】
【発明が解決しようとする課題】
しかし、上記の従来の第1の方法では、封止剤6がICチップ2の上面をも覆っていることから、ICチップ2の放熱が要求された場合でも、直接放熱板に取り付けることができず、またICチップ2の厚みが大となって、厚み方向に制約を受けた場合、使用出来なくなる。
【0006】
また、従来の第2の方法では、粘度が高い封止剤6の場合、その濡れ性だけによってICチップ2のバンプ接続部の隙間7に封止剤6がスムースに入り込むことができず、また気泡を巻き込む状態となり、封止工程の後の工程に高温(90〜100°C)プロセスがある場合、バンプ接続部が気泡の膨張による圧力に圧迫されて接続不良になるケースが多い。
【0007】
本発明は、上記のような従来の問題点を解消し、ICチップ面上への封止剤のはみ出しや接続部隙間への気泡巻き込み等の不都合を伴うことなく、的確に封止効果を達成できるICチップの封止方法を提供することを目的とする。
【0008】
【課題を解決するための手段】
上記の目的を達成するため、本願の第1発明のICチップ封止方法は、ICチップを基板上に装着した後、ICチップと基板との間の隙間を封止剤で封止する方法において、基板を水平面に対して5°以上30°以下の角度をもって傾斜させた状態において、ディスペンスノズルを、その吐出口の基板からの高さ位置がICチップの上下面の中間になるように保って、ICチップの上辺に沿って相対的に移動させながら、ICチップと基板との間の隙間に、前記上辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、ディスペンスノズルの上記移動を1回又は繰り返して、ICチップと基板との間に粘着液状態の封止剤を充填することを特徴とする。
【0009】
上記の目的を達成するため、本願の第2発明のICチップ封止方法は、ICチップが搭載された基板を水平面に対して5°以上30°以下の角度をもって傾斜させた状態において、前記ICチップと基板との間の隙間に、ディスペンスノズルを、その吐出口の基板からの高さ位置がICチップの上下面の中間になるように保って、ICチップの上辺に沿って相対的に移動させながら、前記上辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、次いで前記基板を略水平面内で所定角度回転させ、かつ前記基板を水平面に対して所定角度をもって傾斜させ、粘着液状態の封止剤を上記と同様にして再吐出供給することを特徴とする。
【0010】
上記の目的を達成するため、本願の第3発明のICチップ封止方法は、上記第2発明において、ICチップと基板との間の隙間に、前記ICチップの上辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、次いで前記基板を略水平面内で180°回転させ、かつ、前記基板を水平面内に対して所定角度をもって傾斜させ、粘着液状態の封止剤を再吐出供給することを特徴とする。
【0011】
上記の目的を達成するため、本願の第4発明のICチップ封止方法は、ICチップを基板上に装着した後、ICチップと基板との間の隙間を封止剤で封止する方法において、基板を水平面に対して5°以上30°以下の角度をもって傾斜させた状態において、基板の傾斜方向の基準線に対し、それぞれ所定角度傾斜するように上方左辺と上方右辺とが位置するようにICチップを配置した状態で、ディスペンスノズルを、その吐出口の基板からの高さ位置がICチップの上下面の中間になるように保って、ICチップの上方左辺及び上方右辺に沿って相対的に移動させながら、ICチップと基板との間の隙間に、前記上方左辺及び上方右辺に沿った隙間口から粘着液状態の封止剤を吐出供給することを特徴とする。
【0012】
上記の目的を達成するため、本願の第5発明のICチップ封止方法は、上記第4発明において、基板を水平面に対して所定角度をもって傾斜させ、基板の傾斜方向の基準線に対し、ほぼ45°づつ傾斜するように上左辺と上右辺とが位置するようにICチップを配置した状態で、ディスペンスノズルをICチップの上左辺及び上右辺に沿って相対的に移動させながら、ICチップと基板との間の隙間に、前記上左辺及び上右辺に沿った隙間口から粘着液状態の封止剤を吐出供給することを特徴とする。
【0013】
上記目的を達成するため、本願の第6発明のICチップの封止方法は、上記第5発明において、ICチップと基板との間に、前記上方左辺および前記上方右辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、次いで基板を略水平面内で180°回転させて、ICチップの元の下方右辺及び下方左辺を前記上方左辺及び上方右辺に位置させた状態で上記と同様ディスペンスノズルから粘着液状態の封止剤を吐出供給することを特徴とする。なお上記各発明においては、基板を水平面に対する基板の傾斜角は5°〜30°の範囲の角度とすること、基板を高温状態のステージ上に配置することが望ましい。
【0014】
本願の第1発明によれば、基板を水平面に対して所定角度をもって傾斜させ、ディスペンスノズルをICチップの上辺に沿って相対的に移動させながら、ICチップと基板との間の隙間に、前記上辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、ディスペンスノズルの上記移動を繰り返して、ICチップと基板との間に粘着液状態の封止剤を充填しているので、即ち、IC基板を水平面に対して傾斜して設置し、ICチップの上辺に沿ってノズルを移動しながら封止剤を吐出して線引き塗布を行うので、封止剤がその濡れ性だけでなく、さらに自重によりIC隙間にスムースかつ一方向に流れ込んでいき、気泡の巻き込みを極力押さえることができる。
【0015】
さらに、封止剤がIC表面を覆うことがないので、ICの放熱が要求された場合にはIC表面を直接放熱板に取り付けることができ、また封止されたICがチップ厚み分のみの最小寸法であるので、ICの厚み方向に制約を受けた場合にも何ら支障を来たさない。
【0016】
また、本願の第2、3発明によれば、ICチップを基板上に装着した後、ICチップと基板との間の隙間を封止剤で封止する方法において、基板を水平面に対して所定角度をもって傾斜させ、ディスペンスノズルをICチップの上辺に沿って相対的に移動させながら、ICチップと基板との間の隙間に、前記上辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、次いで基板を略水平面内で所定角度、例えば180°回転させ、ICチップの元の下辺を前記上辺位置に位置させた状態で上記と同様に粘着液状態の封止剤を吐出供給することにより、即ち、ICチップを回転させて対向2辺それぞれを上辺に位置させた状態で、上辺に沿って封止剤を線引き塗布し封止剤を行うので、前記第1発明に比較し気泡の巻き込みという点では若干劣るが、これに比較して生産性を高めることができると共に封止剤の分布がより均等化され、好ましい封止結果を得ることができる。
【0017】
また、本願の第2発明において、基板を水平面に対して所定角度をもって傾斜させ、基板の傾斜方向に対しほぼ直角方向に上辺と下辺とが位置するようにICチップを配置した状態で、ディスペンスノズルをICチップの上辺に沿って相対的に移動させながら、ICチップと基板との間の隙間に、前記上辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、次いで順次基板を回転させ、ICチップの元の下辺、左辺、右辺のそれぞれを前記上辺位置に位置させた状態で上記と同様にディスペンスノズルから粘着液状態の封止剤を吐出供給することにより、即ち、ICチップを90度単位で回転させ、各辺を順次上辺に位置させた状態で、それぞれに封止剤の線引き塗布を行うようにすることができ、この場合前記第1発明に比較し、気泡の巻き込みという点では劣るが、これに比較し格段に短時間で封止を行うことができる。
【0018】
本願の第4、第5発明によれば、ICチップを基板上に装着した後、ICチップと基板との間の隙間を封止剤で封止する方法において、基板を水平面に対して所定角度をもって傾斜させ、基板の傾斜方向の基準線に対し、それぞれ所定角度、例えばほぼ45°傾斜するように上方左辺と上方右辺とが位置するようにICチップを配置した状態で、ディスペンスノズルをICチップの上左辺及び上右辺に沿って相対的に移動させながら、ICチップと基板との間の隙間に、前記上左辺及び上右辺に沿った隙間口から粘着液状態の封止剤を吐出供給することにより、即ち、傾斜面において、四辺形ICチップの隣接2辺を傾斜面の上側に位置させ、この2辺からほぼ同時に線引き塗布を行うことにより、塗布回数少なく短時間に効率良く、しかも気泡の巻き込みなく封止を行うことができる。
【0019】
本願の第発明によれば、基板を180度回転させ新しく上側に位置した、基準線に対して45°傾斜の隣接2辺から封止を行うことにより、前記第発明に比較し、気泡の巻き込みという点では若干劣るが、これに比較し一層短時間で封止を行うことができる。
【0020】
【発明の実施の形態】
(実施形態1)
図1は、本発明の第1の実施形態におけるICチツプの封止方法の斜視構成図(a)、断面図(b)及び基板とノズルの配置状態図(c)である。
【0021】
先ず、封止を行うIC基板3を載置するためのステージ4を、水平面に対して所定の角度α傾斜した状態に設置する。この傾斜角αは、ICチップ2の大きさや封止剤6の粘度等によっても異なるが、5°〜30°程度の所定の角度が好ましく、15°前後が最適である。なおこの角度は、封止作業中固定した一定の角度に設定してもよいが、場合によっては封止剤吐出の際の傾斜角とその後の吐出剤流動期間における傾斜角とを、上記所定角度範囲内で異なる値に設定することもできる。
【0022】
また基板3上の封止剤6の粘度を低下させるため、ステージ4の温度を或る一定の温度に設定して、基板3を適当な温度に加熱しておくための温度制御手段を設置することが好適である。この温度は、封止剤6の種類により異なり、たとえば60°Cの場合もあるが、時には常温の場合もあり得る。
【0023】
なお、ステージ4上方には、特に図示されていないが、IC基板を装着するための装着機構を備え、一方ステージ4の中央部下面側にはその法線方向に向いた回転軸が設けられ、ステージ4をその傾斜面内で任意の角度に回転できるように構成されている。回転軸は、駆動モータ、電源及び制御手段により、任意の角度に駆動しかつ設定できるように構成されている。なお、ステージ4の傾斜角、従って回転軸の傾斜角を調節可能とし、手動調節または所定のプログラムにより変化できるように構成しておいてもよい。
【0024】
このステージ4の上に、四角形状のICチップ2の辺11(例えば図のAB)が長方形基板3の辺12(例えばCD)に対し平行に配置された状態でICチップ2がフリップチップされたIC基板3を、ステージ4の辺13(例えばEF)と基板3の側辺12との関係が平行となるように保持する。
【0025】
図1の(c)に示すように、ディスペンスノズル1を、その出口面が基板3の面に平行となる向きに配置する。この状態では、水平面に対するステージ4の傾斜角αが15°の場合は、水平面とノズルの軸方向との角度は75°となる。
【0026】
次に封止動作について説明する。粘着液状態の封止剤6を塗布する線引き移動は、上記の状態において、図1の(a)に示すように、ノズル1をICチップ2に対して相対的に移動走査して行い、ICチップ2の上辺11の一端Aから他端Bまで移動しながら封止剤6を吐出して行う。場合によっては、ノズル1に対してステージ4を移動して線引きを行うようにしてもよい。以下の各実施形態においても同じである。なお、ノズル1の先端は、ICチップの側面からは傾斜面方向に距離9だけ離れ、IC基板3からは法線方向に距離10(図6(b)に示す場合と同じである。)だけ離れている。
【0027】
図1の(b)に示すように、ノズル1から吐出圧力Pにより、適当な粘着液状態に調整された封止剤6がICチップ2の上辺と基板2との間の隙間口近傍に吐出供給される。この封止剤6は、濡れ性(毛細管現象)及び自重により、時間の経過とともに次第にICチップ2と基板3との間の隙間7を下方に流動していき、気泡の巻き込みを生じること無く、前記隙間7を充填する。なお、封止剤の塗布は、1回に限らず、ICチップ2の大きさに応じて、必要十分な回数行う。
【0028】
図2の(a)〜(g)は、本発明の第1の実施形態におけるICチップ封止方法の塗布回数が複数回の場合(この例では3回)の塗布方法と順序を示し、ICチップ2と基板3との隙間7に封止剤が入っていく様子を,ICチップ2を上から透視したと仮定して描いた概略図である。
【0029】
塗布回数が、3回の場合、ICチップ2の上の上辺から1回目の線引き塗布51を行い(図2の(a))、塗布された封止剤がICチップ2と基板3との隙間に入り込んでしまう状態55になり、線引き箇所には基板3の表面に封止剤の残り跡54ができる(図2の(b))。その後2回目の線引き塗布56を行う(図2の(c))。1回目と同じように、塗布された封止剤がICチップ2と基板3との隙間に入り込んでしまう状態58になり、線引き箇所には基板3の表面に封止剤の残り跡57ができる(図2の(d))。その後3回目の線引き塗布59を行う(図2の(e))。塗布された封止剤がICチップと基板との隙間に入り込みICチップ2の下面全体を充填してしまう状態60となり(図2の(f))、さらにはICチップ2の下辺から封止剤が露出する状態62となる(図2の(g))。なお、(g)で示す状態62においては、ICチップ2の両側辺からはみ出した封止剤や線引き箇所の両端部から垂れ下った封止剤によって、フィレット61が形成され、ICチップ2の上下辺に形成されるフィレット61と共に、ICチップ2の4辺のいずれにもフィレット61が形成される。
【0030】
上記の封止方法によれば、封止剤6がICチップ2の上面を覆うことはないので、ICチップ2の放熱が要求された場合には、その上面に直接放熱板を取り付けることができ、また封止後の厚みをチップ厚み分のみの最小寸法にできるので、ICチップの厚み方向に制約を受けた場合でも、問題は生じない。
【0031】
また、基板3を傾け、ICチップ2の上辺から封止剤6を線引き塗布するため、封止剤6が濡れ性だけでなく重力によって基板3とICチップ2との間の隙間に入り込んで一方向(下方向)に流動していくので、気泡を巻き込む確率が低く、流れ込みを容易にすることができ、封止工程の時間短縮も容易に行うことができ、生産性も高めることができる。
【0032】
なお、図1の(b)において、14はICチップ2の下面に形成されたバンプ、17は基板3の上面に形成された電極、16は両者を接合する半田である。
【0033】
(実施形態2)
図3は、本発明の第2の実施形態におけるICチップの封止方法の斜視構成図である。
【0034】
図3に示す第2の実施形態においては、図1の第1の実施形態と同様に、所定の角度に傾斜配置しかつ温度設定したステージ4上に、四角形状のICチップ2の各辺を長方形基板3の対応する各辺に対し平行に配置して、ICチップの上辺33を長方形基板3の上辺38に対し平行に配置して、封止を行う。
【0035】
封止剤6の線引き移動は、ディスペンスノズル1をICチップ2の上辺33の一端Aから他端Bまで移動しながら封止剤を吐出して行う。封止剤塗布回数はICチップ2の大きさに応じて異なる。
【0036】
第2の実施形態は、以上の点では第1の実施形態と基本的には同じであるが、ステージ4をその法線軸の回りに回転してICチップの各辺ごとに線引き封止を行う点で第1の実施形態と異なる。
【0037】
即ち、第2の実施形態においては、図3の(a)に示すように、ディスペンスノズル1を、ICチップ2の上辺の一端Aから他端Bまで線状に移動しながら、ICチップ2及び基板に触れずに封止剤6を吐出した後或る時間の経過後、ステージ4を180°回転させ、新しく上辺に位置した辺(元の下辺)の端から他端まで移動しながら、ICチップ2及び基板3に触れずに封止剤を吐出して線引きを行い、更に図3の(b)に示すように、元の位置から90°及び270°回転させた状態で、それぞれ封止剤を吐出して線引きを行う。このように、ステージ4を90°単位で回転させ各辺を順次上辺に位置させて、それぞれ線引き塗布を行うことにより、フィレット形成に要する時間が短縮され、第1の実施形態よりも短時間で塗布することができ、生産性をより向上させることができる。
【0038】
なお、上辺からの封止剤6の吐出供給と、ステージ4を180°回転させて元の下辺を上辺としての封止剤6の吐出供給との2工程のみで、封止を行ってもよい。
【0039】
(実施形態3)
図4は、本発明の第3の実施形態におけるICチップの封止方法の斜視構成図である。第3の実施形態は、図4の(a)に示すように、四角形状のICチップ2を基板3上に装着した後、ICチップ2と基板3との間の隙間を封止剤で封止する方法において、ステージ4上の基板3を水平面に対して所定角度αをもって傾斜させ、基板3の傾斜方向の基準線に対し、ほぼ45°(β=45°)づつ傾斜するように上左辺42と上右辺43とが位置するようにICチップ2を配置した状態で、ディスペンスノズル1をICチップ2の上左辺42及び上右辺43に沿って相対的に移動させながら、ICチップ2と基板3との間の隙間に、前記上左辺42及び上右辺43に沿った隙間口から粘着液状態の封止剤6を吐出供給することで封止を行っている。この際のディスペンスノズル1の移動軌跡を▲1▼、▲2▼で示す。このディスペンスノズル1による封止剤6の吐出供給は、ICチップ2の下面全域が封止剤6で充填され、ICチップ2の周辺にフィレットが形成されるまで繰り返し行われる。上記例では▲1▼、▲2▼で示す移動軌跡で封止剤6の吐出供給を繰り返し行ったが、図4の(b)に示すような移動軌跡▲1▼、▲2▼、▲3▼、▲4▼、▲5▼、▲6▼で、封止剤6の吐出供給を行い、両側部に比較し、中央部の吐出供給量を大にすると合理的である。
【0040】
なお、第3の実施形態のようにして、第1回目の封止剤6の吐出供給をおこなった後、基板3を180°回転させて、ICチップの元の下右辺及び下左辺を前記上左辺及び上右辺に位置させた状態で上記と同様ディスペンスノズルから粘着液状態の封止剤を吐出供給することによって、封止作業を行うこともでき、このようにすることにより封止時間の短縮を図ることができる。
【0041】
【発明の効果】
本発明によれば、ICチップの上面に直接放熱板を取り付けることができ、またICチップの厚みを最小寸法にできるよう、ICチップの上面を覆うことなくICチップの封止を行うことができる。
【0042】
さらに、封止剤がその濡れ性だけでなく、自重により基板とICチップとの隙間に流れ込んでいくので、流れ込みを容易にすることができ、時間短縮により生産性も高めることができると共に、気泡の巻き込みを抑える点で有利となる。
【図面の簡単な説明】
【図1】(a)は、本発明の第1の実施形態におけるICチップの封止方法を示す斜視構成図である。
(b)は、本発明の第1の実施形態におけるICチップの封止方法を示す断面図である。
(c)は、(a)、(b)における基板とノズルの配置状態を示す図である。
【図2】本発明の第1の実施形態におけるICチップの封止方法の塗布回数が複数回の場合の塗布方法と順序を示す図である。
【図3】(a)及び(b)は本発明の第2の実施形態におけるICチップの封止方法の斜視構成図である。
【図4】(a)は本発明の第3の実施形態におけるICチップの封止方法の斜視構成図である。
(b)はその変形例の吐出供給経路を示す図である。
【図5】(a)は従来例のICチップの封止方法の斜視構成図である。
(b)はその断面図である。
【図6】(a)は従来例のICチップの封止方法の斜視構成図である。
(b)はその断面図である。
【符号の説明】
1 ディスペンスノズル
2 1Cチップ
3 基板
4 ステージ
6 封止剤
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a flip chip mounting process and an MCM mounting process in IC mounting.
[0002]
[Prior art]
In recent years, the sealing process in the flip chip mounting process and the MCM (multichip module) mounting process in IC mounting is roughly divided into two types.
[0003]
The first method is generally performed as a method of sealing after mounting an IC chip, and is a method shown in FIGS. 5 (a) and 5 (b). In this method, an IC substrate 3 on which an IC chip 2 is flip-chiped (a method in which an IC chip whose output terminal is bumped on a protrusion is directly connected to a terminal of the substrate) is horizontally placed on a stage 4, and the dispensing nozzle 1 Is arranged so that the exit cross section thereof is parallel to the substrate, and the nozzle 1 is moved on the surface of the IC chip 2 and the sealing agent 6 is applied to cover the entire surface of the IC chip 2, for example, as shown by the movement locus L. Therefore, sealing is performed by the entry of the sealing agent 6 from the side surface. As the dispensing nozzle 1, the sealant 6 inside the container is sent to the output part of the container by a manual method, air pressure or pressure of a piston pump or an electric rotary screw, and the sealant 6 is discharged from the tip of the needle-like nozzle. Things are used.
[0004]
As shown in FIG. 6, the second method is that the dispensing nozzle 1 is not touched to the IC chip 2 and the substrate 3 from the outside of the side surface of the IC chip 2 flip-chiped without applying a sealant on the substrate 3. Further, a predetermined distance 9 from the IC chip 2 to the side and a predetermined distance 10 from the IC substrate 3 upward (a distance that is larger than the IC chip gap 7 and smaller than the total distance 8 of the IC chip thickness + IC chip gap). ) Is applied while the discharged sealant 6 is applied to the entire outer surface of the IC chip 2 while moving, so that the sealant 6 enters the gap 7 only by the wettability of the sealant 6. It is.
[0005]
[Problems to be solved by the invention]
However, in the first conventional method described above, since the sealing agent 6 also covers the upper surface of the IC chip 2, even when the heat dissipation of the IC chip 2 is required, it can be directly attached to the heat dissipation plate. Moreover, when the thickness of the IC chip 2 becomes large and is restricted in the thickness direction, it cannot be used.
[0006]
Further, in the conventional second method, in the case of the sealing agent 6 having a high viscosity, the sealing agent 6 cannot smoothly enter the gap 7 of the bump connection portion of the IC chip 2 due to the wettability alone. When there is a state in which bubbles are involved, and there is a high temperature (90 to 100 ° C.) process after the sealing step, the bump connection portion is often pressed by pressure due to the expansion of the bubbles, resulting in poor connection.
[0007]
The present invention solves the conventional problems as described above, and achieves a sealing effect accurately without inconvenience such as protrusion of the sealing agent on the IC chip surface and entrainment of bubbles in the gap of the connection part. An object of the present invention is to provide an IC chip sealing method that can be used.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, the IC chip sealing method of the first invention of the present application is a method of sealing a gap between the IC chip and the substrate with a sealing agent after the IC chip is mounted on the substrate. In a state where the substrate is inclined at an angle of 5 ° to 30 ° with respect to the horizontal plane , the dispensing nozzle is kept so that the height position of the discharge port from the substrate is in the middle of the upper and lower surfaces of the IC chip. The adhesive nozzle is discharged and supplied from the gap opening along the upper side to the gap between the IC chip and the substrate while relatively moving along the upper side of the IC chip. It is characterized by filling the sealing agent in the adhesive liquid state between the IC chip and the substrate once or repeatedly.
[0009]
To achieve the above object, the IC chip sealing method of the second aspect of the present invention is the state in which the IC chip is tilted with 30 ° angle of less than 5 ° above the substrate mounted with respect to the horizontal plane, the IC In the gap between the chip and the substrate, the dispensing nozzle is relatively moved along the upper side of the IC chip, keeping the height of the discharge port from the substrate in the middle of the upper and lower surfaces of the IC chip. While discharging and supplying the sealing agent in the adhesive state from the gap opening along the upper side, and then rotating the substrate at a predetermined angle in a substantially horizontal plane, and tilting the substrate at a predetermined angle with respect to the horizontal plane, The sealing agent in the adhesive liquid state is supplied again in the same manner as described above.
[0010]
In order to achieve the above object, an IC chip sealing method according to a third invention of the present application is the method according to the second invention, wherein an adhesive is adhered to a gap between the IC chip and the substrate from a gap opening along the upper side of the IC chip. Discharge and supply liquid sealant, then rotate the substrate 180 ° in a substantially horizontal plane, tilt the substrate at a predetermined angle with respect to the horizontal plane, and re-discharge the adhesive sealant It is characterized by supplying.
[0011]
In order to achieve the above object, an IC chip sealing method according to a fourth invention of the present application is a method in which a gap between an IC chip and a substrate is sealed with a sealant after the IC chip is mounted on the substrate. When the substrate is inclined at an angle of 5 ° to 30 ° with respect to the horizontal plane, the upper left side and the upper right side are positioned so as to be inclined at a predetermined angle with respect to the reference line in the inclination direction of the substrate. With the IC chip disposed, the dispense nozzle is kept relative to the upper left side and the upper right side of the IC chip while maintaining the height position of the discharge port from the substrate in the middle of the upper and lower surfaces of the IC chip. The sealing agent in the adhesive liquid state is discharged and supplied to the gap between the IC chip and the substrate from the gap opening along the upper left side and the upper right side.
[0012]
In order to achieve the above object, an IC chip sealing method according to a fifth aspect of the present invention is the method according to the fourth aspect, wherein the substrate is tilted at a predetermined angle with respect to a horizontal plane, and substantially the reference line in the tilt direction of the substrate. a state where the upper side left and the upper side right so as to be inclined 45 ° increments placed the IC chip so as to be positioned, while relatively moving along the dispensing nozzle on side left and the upper side right of the IC chip , the gap between the IC chip and the substrate, and wherein the Rukoto discharge test teapot sealant adhesive liquid state from the gap outlet along the upper side left and the upper side right.
[0013]
In order to achieve the above object, an IC chip sealing method according to a sixth invention of the present application is the method according to the fifth invention, wherein an adhesive is provided between the IC chip and the substrate from a gap opening along the upper left side and the upper right side. The liquid sealant is discharged and supplied, and then the substrate is rotated by 180 ° in a substantially horizontal plane so that the original lower right side and lower left side of the IC chip are positioned on the upper left side and upper right side as above. It is characterized by discharging and supplying the sealing agent in the adhesive liquid state from the dispense nozzle. In each of the above inventions, it is desirable that the substrate is inclined at an angle of 5 ° to 30 ° with respect to the horizontal plane, and the substrate is disposed on a high-temperature stage.
[0014]
According to a first aspect of the present invention, the substrate is inclined at a predetermined angle to the horizontal plane, while relatively moving the de I dispense nozzle along the upper side of the IC chip, the gap between the IC chip and the substrate The adhesive liquid state sealant is discharged and supplied from the gap opening along the upper side, and the above-mentioned movement of the dispense nozzle is repeated to fill the adhesive liquid state sealant between the IC chip and the substrate . In other words, the IC substrate is installed with an inclination with respect to the horizontal plane, and the sealing agent is discharged while the nozzle is moved along the upper side of the IC chip. In addition, it can flow into the IC gap smoothly and in one direction due to its own weight, and the entrainment of bubbles can be suppressed as much as possible.
[0015]
Furthermore, since the sealing agent does not cover the IC surface, the IC surface can be directly attached to the heat dissipation plate when the heat dissipation of the IC is required. Since it is a dimension, it does not cause any trouble even when it is restricted in the thickness direction of the IC.
[0016]
The predetermined according to the second, third invention of the present application, after mounting the IC chip on the substrate, a method of sealing with a sealing agent the gap between the IC chip and the substrate, the substrate with respect to a horizontal plane is inclined at an angle, while relatively moving the de I dispense nozzle along the upper side of the IC chip, the gap between the IC chip and the substrate, the sealing agent of the adhesive liquid state from the gap opening along the upper edge Next, the substrate is rotated by a predetermined angle, for example, 180 ° in a substantially horizontal plane, and the sealing agent in the adhesive liquid state is discharged in the same manner as described above with the original lower side of the IC chip positioned at the upper side position. by supplying comparison, i.e., in a state that by rotating the IC chip is positioned opposing two sides, respectively to the upper side, since delineate coated perform sealing agent sealing agent along the upper side, in the first invention In terms of entrainment of bubbles Although it is inferior, productivity can be improved compared with this, distribution of sealing agent is made more equal, and a preferable sealing result can be obtained.
[0017]
Further, in the second invention of the present application, the dispense nozzle in a state where the substrate is inclined at a predetermined angle with respect to the horizontal plane and the IC chip is disposed so that the upper side and the lower side are positioned substantially perpendicular to the inclination direction of the substrate. Is relatively moved along the upper side of the IC chip, and the adhesive sealant is discharged and supplied from the gap opening along the upper side to the gap between the IC chip and the substrate. By rotating and discharging the adhesive sealant from the dispense nozzle in the same manner as described above with the original lower side, left side, and right side of the IC chip positioned at the upper side position, that is, the IC chip is rotated in 90-degree increments, while being positioned successively upper each side, it is possible to perform the drawing application of the sealant in each compared in this case the first invention, the bubble Inferior in terms of entanglement, but can be compared to sealing in a remarkably shorter period of time to this.
[0018]
The of the present application 4, according to the fifth aspect of the present invention, after mounting the IC chip on the substrate, a predetermined angle in a method of sealing, the substrate with respect to the horizontal plane of the gap between the IC chip and the substrate with a sealing agent With the IC chip disposed so that the upper left side and the upper right side are positioned at a predetermined angle, for example, approximately 45 ° with respect to the reference line in the tilt direction of the substrate, the dispense nozzle is set to the IC chip. while the upper side is relatively moved along the left side and the upper side right of, IC chip and the gap between the substrate, a sealing agent of the adhesive liquid state from the upper side left and the gap opening along the upper side right In other words, the two adjacent sides of the quadrilateral IC chip are positioned above the inclined surface on the inclined surface, and the drawing is applied almost simultaneously from the two sides, so that the number of applications is reduced and the efficiency is reduced in a short time. well Moreover, sealing can be performed without entrainment of bubbles.
[0019]
According to the sixth invention of the present application, by performing sealing from two adjacent sides inclined by 45 ° with respect to the reference line, which is newly positioned on the upper side by rotating the substrate by 180 degrees, the bubble is compared with the fifth invention. Although it is slightly inferior in terms of entrainment, sealing can be performed in a shorter time than this.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
(Embodiment 1)
FIG. 1 is a perspective configuration diagram (a), a cross-sectional view (b), and an arrangement state diagram of a substrate and a nozzle (c) of an IC chip sealing method according to a first embodiment of the present invention.
[0021]
First, the stage 4 for mounting the IC substrate 3 to be sealed is installed in a state inclined at a predetermined angle α with respect to the horizontal plane. Although the inclination angle α varies depending on the size of the IC chip 2 and the viscosity of the sealant 6, a predetermined angle of about 5 ° to 30 ° is preferable, and about 15 ° is optimal. This angle may be set to a fixed angle that is fixed during the sealing operation. In some cases, the inclination angle at the time of discharging the sealant and the inclination angle in the subsequent discharge agent flow period are set to the predetermined angle. Different values can be set within the range.
[0022]
Further, in order to lower the viscosity of the sealant 6 on the substrate 3, the temperature of the stage 4 is set to a certain constant temperature, and a temperature control means is provided for heating the substrate 3 to an appropriate temperature. Is preferred. This temperature varies depending on the type of the sealant 6, and may be 60 ° C., for example, but may sometimes be room temperature.
[0023]
Although not particularly shown above the stage 4, a mounting mechanism for mounting the IC substrate is provided. On the other hand, a rotating shaft oriented in the normal direction is provided on the lower surface side of the central portion of the stage 4, The stage 4 is configured to be able to rotate at an arbitrary angle within the inclined surface. The rotation shaft is configured to be driven and set at an arbitrary angle by a drive motor, a power source, and control means. The tilt angle of the stage 4 and thus the tilt angle of the rotating shaft may be adjustable and may be configured to be manually adjusted or changed by a predetermined program.
[0024]
On this stage 4, the IC chip 2 is flip-chiped in a state where the side 11 (for example, AB in the figure) of the rectangular IC chip 2 is arranged in parallel to the side 12 (for example, CD) of the rectangular substrate 3. The IC substrate 3 is held so that the relationship between the side 13 (for example, EF) of the stage 4 and the side 12 of the substrate 3 is parallel.
[0025]
As shown in FIG. 1 (c), the dispensing nozzle 1 is arranged so that its exit surface is parallel to the surface of the substrate 3. In this state, when the inclination angle α of the stage 4 with respect to the horizontal plane is 15 °, the angle between the horizontal plane and the axial direction of the nozzle is 75 °.
[0026]
Next, the sealing operation will be described. In the above state, the drawing movement for applying the sealant 6 in the adhesive liquid state is performed by moving and scanning the nozzle 1 relative to the IC chip 2 as shown in FIG. The sealant 6 is discharged while moving from one end A to the other end B of the upper side 11 of the chip 2. In some cases, drawing may be performed by moving the stage 4 relative to the nozzle 1. The same applies to the following embodiments. It should be noted that the tip of the nozzle 1 is separated from the side surface of the IC chip by a distance 9 in the inclined surface direction, and from the IC substrate 3 by a distance 10 in the normal direction (same as shown in FIG. 6B). is seperated.
[0027]
As shown in FIG. 1B, the sealant 6 adjusted to an appropriate pressure-sensitive adhesive state by the discharge pressure P from the nozzle 1 is discharged near the gap opening between the upper side of the IC chip 2 and the substrate 2. Supplied. This sealant 6 gradually flows downward through the gap 7 between the IC chip 2 and the substrate 3 with the passage of time due to wettability (capillary phenomenon) and its own weight, without causing entrainment of bubbles, The gap 7 is filled. The sealing agent is applied not only once but also a necessary and sufficient number of times depending on the size of the IC chip 2.
[0028]
FIGS. 2A to 2G show the application method and order when the IC chip sealing method according to the first embodiment of the present invention is applied a plurality of times (in this example, 3 times). FIG. 5 is a schematic diagram illustrating that the sealing agent enters the gap 7 between the chip 2 and the substrate 3 on the assumption that the IC chip 2 is seen through from above.
[0029]
When the number of times of application is 3, the first draw application 51 is performed from the upper side of the IC chip 2 ((a) in FIG. 2), and the applied sealing agent is a gap between the IC chip 2 and the substrate 3. It enters the state 55 where it enters, and a trace 54 of the sealant is formed on the surface of the substrate 3 at the drawing position ((b) of FIG. 2). Thereafter, the second drawing 56 is performed ((c) in FIG. 2). As in the first time, the applied sealing agent enters a state 58 where it enters the gap between the IC chip 2 and the substrate 3, and a trace 57 of the sealing agent is formed on the surface of the substrate 3 at the drawing point. ((D) of FIG. 2). Thereafter, a third drawing application 59 is performed ((e) in FIG. 2). The applied sealing agent enters the gap between the IC chip and the substrate and fills the entire lower surface of the IC chip 2 ((f) in FIG. 2). Further, the sealing agent starts from the lower side of the IC chip 2. Is exposed 62 ((g) of FIG. 2). In the state 62 shown in (g), the fillet 61 is formed by the sealant that protrudes from both sides of the IC chip 2 or the sealant that hangs down from both ends of the drawing portion, and the top and bottom of the IC chip 2. Together with the fillet 61 formed on the side, the fillet 61 is formed on any of the four sides of the IC chip 2.
[0030]
According to the above sealing method, since the sealing agent 6 does not cover the upper surface of the IC chip 2, when heat dissipation of the IC chip 2 is required, a heat radiating plate can be directly attached to the upper surface. In addition, since the thickness after sealing can be set to the minimum dimension corresponding to the chip thickness, no problem occurs even when the thickness direction of the IC chip is restricted.
[0031]
Further, since the substrate 3 is tilted and the sealing agent 6 is drawn and applied from the upper side of the IC chip 2, the sealing agent 6 enters the gap between the substrate 3 and the IC chip 2 not only by wettability but also by gravity. Since it flows in the direction (downward), the probability of entraining bubbles is low, the flow can be facilitated, the time required for the sealing process can be easily reduced, and the productivity can be increased.
[0032]
In FIG. 1B, 14 is a bump formed on the lower surface of the IC chip 2, 17 is an electrode formed on the upper surface of the substrate 3, and 16 is solder for joining the two.
[0033]
(Embodiment 2)
FIG. 3 is a perspective configuration diagram of an IC chip sealing method according to the second embodiment of the present invention.
[0034]
In the second embodiment shown in FIG. 3, as in the first embodiment of FIG. 1, each side of the rectangular IC chip 2 is placed on a stage 4 that is inclined at a predetermined angle and set at a temperature. Sealing is performed by arranging parallel to the corresponding sides of the rectangular substrate 3 and arranging the upper side 33 of the IC chip parallel to the upper side 38 of the rectangular substrate 3.
[0035]
The drawing movement of the sealing agent 6 is performed by discharging the sealing agent while moving the dispensing nozzle 1 from one end A to the other end B of the upper side 33 of the IC chip 2. The number of times of applying the sealant varies depending on the size of the IC chip 2.
[0036]
The second embodiment is basically the same as the first embodiment in the above points, but the stage 4 is rotated around its normal axis to draw and seal each side of the IC chip. This is different from the first embodiment.
[0037]
That is, in the second embodiment, as shown in FIG. 3A, the dispensing nozzle 1 is moved linearly from one end A to the other end B on the upper side of the IC chip 2, and the IC chip 2 and After a certain period of time has passed since the sealant 6 was discharged without touching the substrate, the stage 4 was rotated 180 ° and moved from the end of the side (original lower side) newly located on the upper side to the other end. Drawing is performed by discharging the sealing agent without touching the chip 2 and the substrate 3, and further sealing is performed in a state rotated by 90 ° and 270 ° from the original position as shown in FIG. The agent is discharged to draw the line. In this way, by rotating the stage 4 in units of 90 °, each side is sequentially positioned on the upper side, and performing each drawing application, the time required for fillet formation is shortened, and in a shorter time than in the first embodiment. It can apply | coat and can improve productivity more.
[0038]
The sealing may be performed only in two steps, that is, the discharge supply of the sealing agent 6 from the upper side and the discharge supply of the sealing agent 6 with the original lower side as the upper side by rotating the stage 4 by 180 °. .
[0039]
(Embodiment 3)
FIG. 4 is a perspective configuration diagram of an IC chip sealing method according to the third embodiment of the present invention. In the third embodiment, as shown in FIG. 4A, after mounting the rectangular IC chip 2 on the substrate 3, the gap between the IC chip 2 and the substrate 3 is sealed with a sealing agent. a method of sealing, is inclined at a predetermined angle α with the substrate 3 on the stage 4 with respect to the horizontal plane, with respect to the reference line in the inclination direction of the substrate 3, lateral upper so as to be inclined at a time approximately 45 ° (β = 45 °) in a state in which the left side 42 and the upper side right 43 placed the IC chip 2 so as to be positioned, while relatively moving along the dispensing nozzle 1 on side left 42 and the upper side right 43 of the IC chip 2, IC the gap between the chip 2 and the substrate 3, are carried out sealing by discharging supplying sealant 6 of the adhesive liquid state from the upper side left 42 and gap opening along the upper side right 43. The movement trajectory of the dispensing nozzle 1 at this time is indicated by (1) and (2). The discharge supply of the sealing agent 6 by the dispensing nozzle 1 is repeated until the entire lower surface of the IC chip 2 is filled with the sealing agent 6 and a fillet is formed around the IC chip 2. In the above example, the discharge and supply of the sealing agent 6 were repeatedly performed along the movement trajectories indicated by (1) and (2). However, the movement trajectories (1), (2), and (3) as shown in FIG. It is reasonable to supply the sealant 6 at ▼, ▲ 4, ▲ 5, and ⑥, and to increase the discharge supply amount at the center compared to both sides.
[0040]
Incidentally, as in the third embodiment, after subjected to discharge supply of the first sealant 6, the substrate 3 is rotated 180 °, the original lower side right side and the lower side left in the IC chip sealed by by discharging supplying sealant adhesive liquid state from the same dispensing nozzle in a state of being positioned in the upper side left and the upper side right, can also do the sealing operation, to such The stop time can be shortened.
[0041]
【The invention's effect】
According to the present invention, the heat sink can be directly attached to the upper surface of the IC chip, and the IC chip can be sealed without covering the upper surface of the IC chip so that the thickness of the IC chip can be minimized. .
[0042]
Furthermore, since the sealant flows not only in its wettability but also into the gap between the substrate and the IC chip due to its own weight, the flow can be facilitated, and the productivity can be improved by shortening the time. This is advantageous in terms of suppressing the entrainment of.
[Brief description of the drawings]
FIG. 1A is a perspective configuration diagram illustrating an IC chip sealing method according to a first embodiment of the present invention.
(B) is sectional drawing which shows the sealing method of the IC chip in the 1st Embodiment of this invention.
(C) is a figure which shows the arrangement | positioning state of the board | substrate and nozzle in (a), (b).
FIG. 2 is a diagram showing a coating method and order when the number of times of coating in the IC chip sealing method according to the first embodiment of the present invention is plural.
FIGS. 3A and 3B are perspective configuration diagrams of an IC chip sealing method according to a second embodiment of the present invention. FIGS.
FIG. 4A is a perspective configuration diagram of an IC chip sealing method according to a third embodiment of the present invention.
(B) is a figure which shows the discharge supply path | route of the modification.
FIG. 5A is a perspective configuration diagram of a conventional IC chip sealing method.
(B) is a sectional view thereof.
6A is a perspective configuration diagram of a conventional IC chip sealing method. FIG.
(B) is a sectional view thereof.
[Explanation of symbols]
1 Dispensing nozzle 2 1C chip 3 Substrate 4 Stage 6 Sealant

Claims (7)

ICチップを基板上に装着した後、ICチップと基板との間の隙間を封止剤で封止する方法において、基板を水平面に対して5°以上30°以下の角度をもって傾斜させた状態において、ディスペンスノズルを、その吐出口の基板からの高さ位置がICチップの上下面の中間になるように保って、ICチップの上辺に沿って相対的に移動させながら、ICチップと基板との間の隙間に、前記上辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、ディスペンスノズルの上記移動を1回又は繰り返して、ICチップと基板との間に粘着液状態の封止剤を充填することを特徴とするICチップの封止方法。In the method of sealing the gap between the IC chip and the substrate with a sealant after mounting the IC chip on the substrate, the substrate is inclined at an angle of 5 ° to 30 ° with respect to the horizontal plane . The dispense nozzle is kept relatively high along the upper side of the IC chip while keeping the height of the discharge port from the substrate in the middle of the upper and lower surfaces of the IC chip. A sealant in the adhesive liquid state is discharged and supplied to the gap between the gaps along the upper side, and the above movement of the dispense nozzle is performed once or repeatedly to seal the adhesive liquid state between the IC chip and the substrate. An IC chip sealing method comprising filling a stopper. ICチップが搭載された基板を水平面に対して5°以上30°以下の角度をもって傾斜させた状態において、前記ICチップと基板との間の隙間に、ディスペンスノズルを、その吐出口の基板からの高さ位置がICチップの上下面の中間になるように保って、ICチップの上辺に沿って相対的に移動させながら、前記上辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、次いで前記基板を略水平面内で所定角度回転させ、かつ前記基板を水平面に対して所定角度をもって傾斜させ、粘着液状態の封止剤を上記と同様にして再吐出供給することを特徴とするICチップの封止方法。In a state where the substrate on which the IC chip is mounted is inclined at an angle of 5 ° or more and 30 ° or less with respect to the horizontal plane, a dispense nozzle is inserted into the gap between the IC chip and the substrate from the substrate of the discharge port. While keeping the height position in the middle of the upper and lower surfaces of the IC chip, the adhesive liquid state sealant is discharged and supplied from the gap opening along the upper side while moving relatively along the upper side of the IC chip. Then, the substrate is rotated by a predetermined angle within a substantially horizontal plane, and the substrate is inclined at a predetermined angle with respect to the horizontal plane, and the adhesive in the adhesive liquid state is re-discharged and supplied in the same manner as described above. IC chip sealing method. ICチップと基板との間の隙間に、前記ICチップの上辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、次いで前記基板を略水平面内で180°回転させ、かつ、前記基板を水平面内に対して5°以上30°以下の角度をもって傾斜させた状態において、粘着液状態の封止剤を再吐出供給することを特徴とする請求項2記載のICチップの封止方法。In the gap between the IC chip and the substrate, the adhesive in the state of the adhesive liquid is discharged and supplied from the gap opening along the upper side of the IC chip, and then the substrate is rotated by 180 ° in a substantially horizontal plane, and 3. The IC chip sealing method according to claim 2 , wherein the adhesive in the state of the adhesive liquid is re-discharged and supplied in a state where the substrate is inclined at an angle of 5 ° to 30 ° with respect to the horizontal plane. . ICチップを基板上に装着した後、ICチップと基板との間の隙間を封止剤で封止する方法において、基板を水平面に対して5°以上30°以下の角度をもって傾斜させた状態において、基板の傾斜方向の基準線に対し、それぞれ所定角度傾斜するように上方左辺と上方右辺とが位置するようにICチップを配置した状態で、ディスペンスノズルを、その吐出口の基板からの高さ位置がICチップの上下面の中間になるように保って、ICチップの上方左辺及び上方右辺に沿って相対的に移動させながら、ICチップと基板との間の隙間に、前記上方左辺及び上方右辺に沿った隙間口から粘着液状態の封止剤を吐出供給することを特徴とするICチップの封止方法。In the method of sealing the gap between the IC chip and the substrate with a sealant after mounting the IC chip on the substrate, the substrate is inclined at an angle of 5 ° to 30 ° with respect to the horizontal plane . In the state where the IC chip is arranged so that the upper left side and the upper right side are positioned at a predetermined angle with respect to the reference line in the substrate tilt direction, the height of the discharge nozzle from the substrate is set. While maintaining the position between the upper and lower surfaces of the IC chip and relatively moving along the upper left side and the upper right side of the IC chip, the upper left side and the upper side are inserted into the gap between the IC chip and the substrate. A method for sealing an IC chip, comprising discharging and supplying a sealing agent in an adhesive state from a gap opening along the right side. 基板を水平面に対して5°以上30°以下の角度をもって傾斜させた状態において、基板の傾斜方向の基準線に対し、ほぼ45°づつ傾斜するように上方左辺と上方右辺とが位置するようにICチップを配置した状態で、ディスペンスノズルをICチップの上方左辺及び上方右辺に沿って相対的に移動させながら、ICチップと基板との間の隙間に、前記上方左辺及び上方右辺に沿った隙間口から粘着液状態の封止剤を吐出供給することを特徴とする請求項4記載のICチップの封止方法。When the substrate is inclined at an angle of 5 ° to 30 ° with respect to the horizontal plane, the upper left side and the upper right side are positioned so as to be inclined by about 45 ° with respect to the reference line in the inclination direction of the substrate. While the IC chip is disposed, the dispensing nozzle is moved relatively along the upper left side and the upper right side of the IC chip, and the gap between the IC chip and the substrate is spaced along the upper left side and the upper right side. 5. The IC chip sealing method according to claim 4, wherein a sealing agent in an adhesive liquid state is discharged and supplied from the mouth. ICチップと基板との間に、前記上方左辺および前記上方右辺に沿った隙間口から粘着液状態の封止剤を吐出供給し、次いで基板を略水平面内で180°回転させて、ICチップの元の下方右辺及び下方左辺を前記上方左辺及び上方右辺に位置させた状態で上記と同様ディスペンスノズルから粘着液状態の封止剤を吐出供給することを特徴とする請求項5記載のICチップの封止方法。  Between the IC chip and the substrate, a sealant in an adhesive liquid state is discharged and supplied from a gap opening along the upper left side and the upper right side, and then the substrate is rotated by 180 ° in a substantially horizontal plane, 6. The IC chip according to claim 5, wherein an adhesive liquid-like sealant is discharged and supplied from a dispense nozzle in the same manner as described above with the original lower right side and lower left side being located on the upper left side and upper right side. Sealing method. 基板を高温状態のステージ上に配置した請求項1、2、3、4、5または6記載のICチップの封止方法。Claim 2, 3, 4, 5 or 6 IC chip sealing method according to placing a substrate on a stage of the high-temperature state.
JP03482096A 1996-02-22 1996-02-22 IC chip sealing method Expired - Fee Related JP4108773B2 (en)

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