JPH025534A - Nozzle for paste application use - Google Patents
Nozzle for paste application useInfo
- Publication number
- JPH025534A JPH025534A JP15657888A JP15657888A JPH025534A JP H025534 A JPH025534 A JP H025534A JP 15657888 A JP15657888 A JP 15657888A JP 15657888 A JP15657888 A JP 15657888A JP H025534 A JPH025534 A JP H025534A
- Authority
- JP
- Japan
- Prior art keywords
- paste
- semiconductor chip
- mounting surface
- end faces
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 abstract description 34
- 238000000034 method Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- 239000011800 void material Substances 0.000 abstract description 4
- 238000013459 approach Methods 0.000 abstract description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L2224/743—Apparatus for manufacturing layer connectors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Coating Apparatus (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体チップをパッケージへ接着するのに用いるペース
トを塗布する塗布用ノズルの改良に関し、Ｍ４３且°つ
容易に製造することが可能で、塗布したペーストを半導
体チップ及び搭載面の全面にイ」着させることが可能な
ペースト塗布用ノズルの提供を目的とし、
平坦な端面と、該端面との間に段差を有する溝部と、該
溝部に設けた複数の吐出孔とを具備するよう構成する。[Detailed Description of the Invention] [Summary] Regarding the improvement of a coating nozzle for applying a paste used for bonding a semiconductor chip to a package, the coating nozzle is M43 and can be easily manufactured, and the applied paste can be applied to a semiconductor. The purpose of the present invention is to provide a paste application nozzle that can be applied to the entire surface of a chip and mounting surface. and a hole.
本発明は、半導体装置の製造設備に係り、特に半導体チ
ップをパッケージへ接着するのに用いるペーストを塗布
する塗布用ノズルの改良に関するものである。The present invention relates to equipment for manufacturing semiconductor devices, and particularly to improvements in a coating nozzle for applying a paste used to bond a semiconductor chip to a package.
半導体チップをパッケージに固定する方法としては、金
条と称する金の薄板をパッケージと半導体チップの間に
介在させ、高温に加熱して金シリコンの共晶合金により
固定する方法と、銀ペーストと称する導電性を有する、
銀の微粒子を含有するエポキシ樹脂を比較的低温の加熱
により溶融して固定する方法がある。There are two methods for fixing a semiconductor chip to a package: a thin gold plate called a gold strip is interposed between the package and the semiconductor chip, heated to a high temperature, and fixed with a gold-silicon eutectic alloy; having sex,
There is a method of melting and fixing an epoxy resin containing fine silver particles by heating at a relatively low temperature.
この二つの方法を比較すると、恨ベーストによる方法は
比較的低温の加熱により接着することが可能であり、コ
スト面でも安価であるため、近年銀ペースト法が広く行
われるようになっている。Comparing these two methods, the silver paste method has become widely used in recent years because it is possible to bond by heating at a relatively low temperature and is inexpensive.
以上のような状況から障害の発生しない、効率的な銀ペ
ーストの塗布を行うことが可能なペースト塗布用ノズル
が要望されている。Under the above circumstances, there is a need for a paste coating nozzle that can efficiently coat silver paste without causing any trouble.
従来のペースト塗布用ノズルを第４図〜第６図により、
ペーストをリードフレームのグイステージに塗布する場
合について説明する。The conventional paste application nozzle is shown in Figs. 4 to 6.
The case where the paste is applied to the goo stage of the lead frame will be explained.
第４図は従来のペースト塗布用ノズルの構造を示す図で
ある。図において、ペーストはペースト供給口ｌｉｄに
ねじ込まれた図示しないペースト供給管から供給され、
ノズルの下部に設けた９木の吐出孔１１ｂから吐出する
ようになっている。FIG. 4 is a diagram showing the structure of a conventional paste application nozzle. In the figure, paste is supplied from a paste supply pipe (not shown) screwed into the paste supply port lid,
The liquid is discharged from nine discharge holes 11b provided at the bottom of the nozzle.
第５図にこのペースト塗布用ノズル１１を用いてペース
トをグイステージ１２に塗布した状態を示す。FIG. 5 shows a state in which the paste is applied to the Goo stage 12 using this paste application nozzle 11.
この場合は９個所に半球形のペーストが分離した状態で
塗布されている。In this case, hemispherical paste is applied in nine locations in a separated state.
このペーストの上に半導体チップ１３を搭載した状態を
第６図に示す。図に示す状態ではペーストは分離してい
るが、加熱されると溶融して隣接するペーストと密着す
るようになる。FIG. 6 shows a state in which a semiconductor chip 13 is mounted on this paste. In the state shown in the figure, the pastes are separated, but when heated, they melt and come into close contact with adjacent pastes.
周辺部においてこの密着が先に発生すると、内部のペー
ストの間の空気が閉じ込められることがあり、このよう
になると半導体チップ１３とグイステージ１２の間にボ
イドと称する空気層が生じ、半導体チップ１３とグイス
テージ１２との接触面積が減少し、導電性が悪くなる不
良の原因となっている。If this close contact occurs first in the peripheral area, air between the internal pastes may be trapped, and in this case, an air layer called a void is created between the semiconductor chip 13 and the guide stage 12, and the semiconductor chip 13 This reduces the contact area between the lead stage 12 and the lead stage 12, resulting in poor conductivity.
以上説明の従来のペースト塗布用ノズルにおいては、塗
布したペーストの形状が分離した半球形のために、半導
体チップをその上に搭載して加熱すると、ペーストが溶
融して隣接するペーストと密着するようになり、周辺部
においてこの密着が先に発生すると、内部のペーストの
間の空気が閉じ込められることがあり、このようになる
と半導体チップと搭載面との間にボイドと称する空気層
が生じ、半導体チップとグイステージとの接触面積が減
少し、導電性が悪くなる不良の原因となるという問題点
があった。In the conventional paste application nozzle described above, the applied paste has a separate hemispherical shape, so when a semiconductor chip is mounted on it and heated, the paste melts and comes into close contact with the adjacent paste. If this close contact occurs first in the periphery, the air between the internal pastes may be trapped, and an air layer called a void will be created between the semiconductor chip and the mounting surface, causing the semiconductor There has been a problem in that the contact area between the chip and the Goo stage is reduced, leading to poor conductivity and defects.
本発明は以上のような状況から簡単且つ容易に製造する
ことが可能で、塗布したペーストを半導体チップ及び搭
載面の全面に付着させることが可能なペースト塗布用ノ
ズルの提供を目的としたものである。The present invention aims to provide a paste application nozzle that can be manufactured simply and easily in view of the above-mentioned circumstances, and that can apply the applied paste to the entire surface of the semiconductor chip and the mounting surface. be.
上記問題点は、平坦な端面と、この端面との間に段差を
有する溝部と、この溝部に設けた複数の吐出孔とを具備
する本発明によるペースト塗布用ノズルによって解決さ
れる。The above problem is solved by the paste application nozzle according to the present invention, which includes a flat end face, a groove portion having a step between the end face, and a plurality of discharge holes provided in the groove portion.
即ち本発明においては、ペースト塗布用ノズルの端面と
の間に段差を有する溝部の複数の吐出孔からペーストを
吐出しながら、ペースト塗布用ノズルの端面を半導体チ
ップの搭載面に接近させると、吐出したペーストはこの
溝部の形状で半導体チップ搭載面に厚く塗布され、端面
等の部分ではペーストが押し広げられて薄く塗布される
ので、半導体チップをその上に載せてペーストを加熱し
て溶融した場合には、溶融したペーストが中央部から周
辺部に向けて広がってゆくので、半導体チップと搭載面
との間には空気層が形成されることがなくなり、ボイド
が生じないので、半導体チップと搭載面との接触面積が
減少することがなく、導電性が悪くなる不良の発生を防
止することが可能となる。That is, in the present invention, when the end surface of the paste application nozzle approaches the mounting surface of the semiconductor chip while discharging the paste from the plurality of discharge holes in the groove having a step between the end surface of the paste application nozzle and the end surface of the semiconductor chip, the discharge The shaped paste is thickly applied to the semiconductor chip mounting surface due to the shape of the groove, and the paste is spread out and applied thinly to the edges, etc., so when the semiconductor chip is placed on top of it and the paste is heated and melted, Since the molten paste spreads from the center to the periphery, no air layer is formed between the semiconductor chip and the mounting surface, and no voids are created, so the semiconductor chip and the mounting surface are The contact area with the surface does not decrease, and it is possible to prevent defects in which conductivity deteriorates.
以下第１図〜第３図により、本発明の一実施例をペース
トをリードフレームのグイステージに塗布する場合につ
いて説明する。An embodiment of the present invention will be described below with reference to FIGS. 1 to 3 regarding a case in which a paste is applied to a lead frame stage.
本発明のペースト塗布用ノズルの構造を第Ｆ図に示す。The structure of the paste application nozzle of the present invention is shown in FIG.
図において、ペーストはペースト供給口１ｄにねじ込ま
れた図示しないペースト供給管から供給され、ノズルの
下部に設けた５本の吐出孔１ｂから吐出するようになっ
ている。In the figure, paste is supplied from a paste supply pipe (not shown) screwed into a paste supply port 1d, and is discharged from five discharge holes 1b provided at the bottom of the nozzle.
ペーストを塗布する際には、ペースト塗布用ノズルの端
面１ｃとの間に段差を有する溝部１ａの５個の吐出孔１
ｂからペーストを吐出しながら、ノズルの端面１ｃを半
導体チップの搭載面に接近させると、吐出したペースト
は第２図に示すように、この溝部の十文字の形状で半導
体チップ搭載面に厚く塗布され、端面ＩＣ等の部分では
ペーストが押し広げられて薄く塗布されるので、第３図
に示すように半導体チップをその上に載せてペーストを
加熱して溶融した場合には、溶融したペーストが中央部
から周辺部に向けて広がってゆき、第３図（＋））に示
すように、ペース１−がグイステージ２の全面に広がり
、厚さが薄く分布幅も小さいペーストを介して半導体チ
ップどグイステージ２とが密着してボイドが生じないか
ら、半導体チップとグイステージとの接触面積が減少し
ないので、導電性が悪くなる不良の発生を防止すること
が可能となる。When applying the paste, the five discharge holes 1 in the groove 1a having a step between it and the end surface 1c of the paste application nozzle are used.
When the end face 1c of the nozzle approaches the semiconductor chip mounting surface while discharging paste from b, the discharged paste is thickly applied to the semiconductor chip mounting surface in the cross shape of this groove, as shown in FIG. , the paste is spread out and applied thinly on the edge ICs, etc., so if a semiconductor chip is placed on top of it and the paste is heated and melted, as shown in Figure 3, the molten paste will be spread out in the center. As shown in Fig. 3 (+), the paste 1- spreads over the entire surface of the Gui stage 2, and spreads from the semiconductor chip to the periphery through the paste, which is thin and has a small distribution width. Since the Goo stage 2 is in close contact with the Goo stage 2 and no voids are generated, the contact area between the semiconductor chip and the Goo stage is not reduced, so it is possible to prevent the occurrence of defects resulting in poor conductivity.
以下に本発明による一実施例のボイドの発生率及び銀ペ
ースト厚さの実測値を表示する。The actual measured values of the void occurrence rate and the silver paste thickness in one example according to the present invention are shown below.
り艮ペースト厚さ
〔発明の効果〕
以上の説明から明らかなように、本発明によれば極めて
簡単な構造のペースト塗布用ノズルを用いることにより
、半導体チップと搭載面とがペーストを介して密着して
ボイドが生じないので、半導体チップと搭載面との接触
面積が減少することがなく、導電性が悪くなる不良の発
生を防止することが可能となる利点があり、著しい経済
的及び信頼性向上の効果が期待でき、工業的には極めて
有用なものである。Thickness of Paste [Effects of the Invention] As is clear from the above description, according to the present invention, by using a paste application nozzle with an extremely simple structure, the semiconductor chip and the mounting surface can be brought into close contact with each other through the paste. Since no voids are generated during the process, the contact area between the semiconductor chip and the mounting surface is not reduced, and it has the advantage of preventing defects that may lead to poor conductivity, resulting in significant economical and reliability improvements. It can be expected to have an improving effect and is extremely useful industrially.
第１図は本発明による一実施例のペース１．ｉｆｉ布用
ノズルを示す図、
第２図は本発明による一実施例の恨ペーストの塗布状態
を示す図、
第３図は本発明による一実施例の半導体チップの搭載状
態を示す図、
第４図は従来のペース１−塗布用ノズルを示す図、第５
図は従来の鈑ペーストの塗布状態を示す図、第６図は従
来の半導体チップの搭載状態を示す図、
である。
図において、
１はペースト塗布用ノズル、
ｌａは溝部、
１１）は吐出孔、
１ｃは端面、
１ｄはペースト供給口、
２はグイステージ、
３は半導体チップ、
４は銀ペースト、
を示す。FIG. 1 shows pace 1 of an embodiment according to the present invention. FIG. 2 is a diagram illustrating a state in which grating paste is applied according to an embodiment of the present invention; FIG. 3 is a diagram illustrating a state in which a semiconductor chip is mounted in an embodiment according to the present invention; The figure shows the conventional PACE 1-application nozzle, and the 5th
The figure shows a state in which conventional sheet paste is applied, and FIG. 6 shows a state in which a conventional semiconductor chip is mounted. In the figure, 1 is a paste application nozzle, la is a groove, 11) is a discharge hole, 1c is an end face, 1d is a paste supply port, 2 is a gou stage, 3 is a semiconductor chip, and 4 is a silver paste.
Claims (1)
該溝部（１ａ）に設けた複数の吐出孔（１ｂ）と、を具
備することを特徴とするペースト塗布用ノズル。[Claims] A flat end surface (1c); a groove portion (1a) having a step between the end surface (1c);
A paste application nozzle comprising a plurality of discharge holes (1b) provided in the groove (1a).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63156578A JP2561943B2 (en) | 1988-06-24 | 1988-06-24 | Nozzle for paste application and paste application method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63156578A JP2561943B2 (en) | 1988-06-24 | 1988-06-24 | Nozzle for paste application and paste application method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH025534A true JPH025534A (en) | 1990-01-10 |
| JP2561943B2 JP2561943B2 (en) | 1996-12-11 |
Family
ID=15630827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63156578A Expired - Lifetime JP2561943B2 (en) | 1988-06-24 | 1988-06-24 | Nozzle for paste application and paste application method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2561943B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09141163A (en) * | 1995-11-15 | 1997-06-03 | Unisia Jecs Corp | Adhesive coating apparatus |
| WO1998043288A1 (en) * | 1997-03-24 | 1998-10-01 | Seiko Epson Corporation | Semiconductor device and method for manufacturing the same |
| KR100537836B1 (en) * | 2003-08-18 | 2005-12-19 | 앰코 테크놀로지 코리아 주식회사 | Dispensing tool for attaching chip |
| JP2011083766A (en) * | 2009-09-17 | 2011-04-28 | Nhk Spring Co Ltd | Liquid agent application apparatus |
| CN104511394A (en) * | 2013-09-30 | 2015-04-15 | 无锡华润安盛科技有限公司 | Dispensing head and dispensing device |
| CN113650223A (en) * | 2021-08-23 | 2021-11-16 | 东莞市速力科技有限公司 | Quartz sensor packaging method and device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59145032U (en) * | 1983-03-17 | 1984-09-28 | 新日本無線株式会社 | Mounting agent application nozzle for bonding semiconductor chips |
-
1988
- 1988-06-24 JP JP63156578A patent/JP2561943B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59145032U (en) * | 1983-03-17 | 1984-09-28 | 新日本無線株式会社 | Mounting agent application nozzle for bonding semiconductor chips |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09141163A (en) * | 1995-11-15 | 1997-06-03 | Unisia Jecs Corp | Adhesive coating apparatus |
| WO1998043288A1 (en) * | 1997-03-24 | 1998-10-01 | Seiko Epson Corporation | Semiconductor device and method for manufacturing the same |
| US6489668B1 (en) | 1997-03-24 | 2002-12-03 | Seiko Epson Corporation | Semiconductor device and method for manufacturing the same |
| KR100537836B1 (en) * | 2003-08-18 | 2005-12-19 | 앰코 테크놀로지 코리아 주식회사 | Dispensing tool for attaching chip |
| JP2011083766A (en) * | 2009-09-17 | 2011-04-28 | Nhk Spring Co Ltd | Liquid agent application apparatus |
| CN104511394A (en) * | 2013-09-30 | 2015-04-15 | 无锡华润安盛科技有限公司 | Dispensing head and dispensing device |
| CN113650223A (en) * | 2021-08-23 | 2021-11-16 | 东莞市速力科技有限公司 | Quartz sensor packaging method and device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2561943B2 (en) | 1996-12-11 |
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| JPS6373544A (en) | Lead frame |
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