JP2000077433A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent fitly a bonding agent from flowing in terminal parts on the surface of an insulating substrate by a simple means, without trouble such as let a semiconductor chip separate wide from the terminal parts on the surface of the substrate, in when where the chip is bonded on the surface of the substrate using the bonding agent. SOLUTION: A semiconductor device A is provided with an insulating substrate 1, having terminal parts 11 on the surface thereof and a semiconductor chip 3 bonded on the surface of this substrate 1 via a bonding agent 2 between the chip 3 and the substrate 1 and electrodes 30 formed on the chip 3 and the terminal parts 11 on the surface of the substrate 1 are connected with each other via wires W. In the semiconductor device A, projected or recessed step parts 13, which can prevent the bonding agent 2 from flowing in the parts 11 on the surface of the substrate 1 in the uncured state, are provided at the positions between the bonded place of the chip 3 to the surface of the substrate 1 and the parts 11 out of the position on the surface of the substrate 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor chip is bonded to an insulating substrate formed of a synthetic resin film or the like using an adhesive, and a method of manufacturing the same.

[0002]

2. Description of the Related Art As is well known, as a means for manufacturing a resin package type semiconductor device, there is a means for utilizing a metal lead frame and mounting a semiconductor chip on the lead frame. However, according to this means, since it is necessary to expose a part of the lead frame as a terminal outside the resin package, the width and thickness of the entire semiconductor device tend to increase. In addition, the lead frame generally needs to be formed in a considerably complicated shape, and the cost is high, so that the manufacturing cost of the finally obtained semiconductor device is also high.

In view of the above, instead of using a lead frame, means using an insulating substrate made of, for example, a thin synthetic resin film or another material has been employed. Specifically, as shown in FIG. 11, this conventional means attaches the semiconductor chip 3e to the surface of an insulating substrate 90 made of, for example, a thin synthetic resin film via an adhesive 91, and Semiconductor chip 3e
Of the plurality of electrodes 30e and the plurality of terminal portions 92 of the insulating substrate 90
Are electrically connected via a wire W such as a gold wire. According to such means, the raw material cost of the insulating substrate 90 can be reduced. Also, for example, by providing solder bumps 93 on the back surface of the insulating substrate 90, the overall width and thickness are prevented from being large and bulky.
It can be finished as a surface-mount type semiconductor device.

[0004]

However, the above-mentioned conventional means has the following disadvantages.

That is, in order to properly bond the semiconductor chip 3e to the surface of the insulating substrate 90, the adhesive 91 is applied to the insulating substrate 90 in a wide range such that the adhesive 91 protrudes to the outer periphery of the semiconductor chip 3e in plan view. 90 must be applied to the surface. When the application area or the application amount of the adhesive 91 is small, a cavity is easily generated inside the adhesive 91. For example, when the solder bump 93 is heated in order to reflow the solder bump 93, air in the cavity is generated. This is because it causes a phenomenon of expansion and is not appropriate. More specifically, the expansion of the air in the cavity does not cause a significant problem with the means using a lead frame. However, if the insulating substrate 90 is made of a soft synthetic resin, for example, Substrate 90
This is a factor that causes the peripheral portion of the semiconductor chip 3e to bend and deform so as to expand significantly due to the expansion of the air, and the solder bump 93 is displaced.

However, conventionally, when the adhesive 91 is applied to the extent that it protrudes to the outer periphery of the semiconductor chip 3 e, it flows in the direction of the arrow Na before the adhesive 91 is cured, and flows into the surface of the terminal portion 92. There was a case.
In particular, in the manufacture of the semiconductor device, as a method for ensuring the adhesion of the semiconductor chip 3e, the semiconductor chip 3e is used.
Since e is generally pressed downward from above, the adhesive 91 is more likely to flow into the surface of the terminal portion 92. Therefore, conventionally,
Due to the adhesion of the adhesive to the surface of the terminal portion 92,
In some cases, the operation of bonding the wire W to the terminal portion 92 cannot be performed properly. Further, conventionally, from the viewpoint of preventing such a situation as much as possible, the terminal portion 92 cannot be brought too close to the semiconductor chip 3e, and there is a certain limit in downsizing the semiconductor device. Furthermore, conventionally, it has been necessary to strictly control the amount and position of the adhesive 91 to prevent the adhesive 91 from flowing into the surface of the terminal portion 92.

The present invention was conceived under such circumstances, and when a semiconductor chip is bonded to the surface of an insulating substrate using an adhesive, the terminal portion between the semiconductor chip and the insulating substrate is formed. It is an object of the present invention to make it possible to appropriately prevent the adhesive from flowing into the terminal portion of the insulating substrate by a simple means without greatly separating the adhesive.

[0008]

DISCLOSURE OF THE INVENTION In order to solve the above problems, the present invention employs the following technical means.

According to a first aspect of the present invention, there is provided a semiconductor device. The semiconductor device includes an insulating substrate having a terminal portion on a surface thereof, and a semiconductor chip adhered on the surface of the insulating substrate via an adhesive, and the electrodes of the semiconductor chip and the insulating substrate. A terminal device is a semiconductor device connected via a wire, and the adhesive is not applied between the bonding portion of the semiconductor chip and the terminal portion on the surface of the insulating substrate. It is characterized in that a convex or concave step is provided which can prevent the insulating substrate from flowing into the terminal portion in the cured state.

The step is formed by forming a part of the resist layer provided on the surface of the insulating substrate into a convex shape, or forming a concave groove on the surface of the insulating substrate or the resist layer provided on the surface. Accordingly, the configuration provided can be provided.

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes a step of bonding a semiconductor chip on a surface of an insulating substrate via an adhesive, and a step of connecting an electrode of the semiconductor chip and a terminal portion on a surface of the insulating substrate via a wire. A method of manufacturing a semiconductor device, comprising: as an insulating substrate, a terminal portion of the insulating substrate in an uncured state between the bonding portion of the semiconductor chip and the terminal portion in an uncured state. It is characterized by using a member provided with a convex or concave step portion capable of preventing the liquid from flowing into the substrate.

In the present invention, even if the adhesive applied on the surface of the insulating substrate flows in the direction of the terminal portion of the insulating substrate in an uncured state, the flow is blocked by the convex or concave step. By stopping the adhesive, the adhesive can be prevented from flowing further in the direction of the terminal portion.
Therefore, in the present invention, it is possible to prevent the adhesive from being unduly attached to the surface of the terminal portion, and to appropriately perform the wire connection between the electrode of the semiconductor chip mounted on the insulating substrate and the terminal portion. be able to. According to the present invention, even when the distance between the bonding portion of the semiconductor chip and the terminal portion of the insulating substrate is reduced, the adhesive can be prevented from flowing into the surface of the terminal portion. Therefore, the size of the entire semiconductor device can be made smaller than before.
Further, according to the present invention, it is possible to prevent the adhesive from flowing into the surface of the terminal portion even if the adhesive is applied to the surface of the insulating substrate in a relatively large amount. It can be easily managed.

Other features and advantages of the present invention will become more apparent from the following description of embodiments of the present invention.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be specifically described below with reference to the drawings.

FIG. 1 is a sectional view showing an example of a semiconductor device according to the present invention. FIG. 2 is a plan perspective view of the semiconductor device shown in FIG.

In FIG. 1, a semiconductor device A of the present embodiment is shown.
Is a so-called ball grid array type resin package type semiconductor device. The semiconductor device A includes an insulating substrate 1 having a plurality of terminals 11,
It comprises a resist layer 12, a convex step 13, an adhesive 2, a semiconductor chip 3, a sealing resin 4, and a plurality of solder bumps 5.

The insulating substrate 1 is made of a thin synthetic resin film such as polyimide, for example, and has a rectangular shape that is slightly larger than the semiconductor chip 3 in plan view. A plurality of strip-shaped conductive wirings 10 are pattern-formed on the surface of the insulating substrate 1. The plurality of conductive wires 10 are formed of, for example, copper foil, and one end of each of the plurality of conductive wires 10 serves as the plurality of terminal portions 11 as will be understood from the description of FIG. The plurality of terminal portions 11 are arranged along the outer peripheral edge of the insulating substrate 1 so as to surround a region where the adhesive 2 is applied (a portion where the semiconductor chip 3 is bonded). The plurality of solder bumps 5 are used to surface-mount the semiconductor device A at a desired position, and are joined to the lower surfaces of the other end portions of the plurality of conductive wires 10, respectively. It protrudes below the insulating substrate 1 through a through hole 14 provided in the insulating substrate 1.

The resist layer 12 is for protecting the plurality of conductive wires 10, and covers the insulating substrate 1 so as to cover regions other than the plurality of terminal portions 11 of the plurality of conductive wires 10. Is provided over substantially the entire surface of the substrate. The step 13 is formed by the resist layer 12. The step 13 is formed of the resist layer 12
Are formed by repeating the screen printing of the resist for forming a plurality of times to form a part of the resist layer 12 having a thickness larger than that of the other parts. As shown in FIG. 2, the step portion 13 has a streak shape in which the overall shape in a plan view is a hollow rectangular shape, and the semiconductor chip 3 is located in a region inside the arrangement region of the plurality of terminal portions 11. Is provided so as to surround the bonding portion.

The semiconductor chip 3 is, for example, an IC chip, and is bonded on the resist layer 12 of the insulating substrate 1 via an adhesive 2. As the adhesive 2, for example, a thermosetting epoxy resin-based adhesive is applied. The plurality of electrodes 30 provided on the upward main surface of the semiconductor chip 3 and the plurality of terminal portions 11 are conductively connected via wires W such as gold wires. The above sealing resin 4
Is for sealing the semiconductor chip 3 and the wires W to protect them.

Next, an example of a method for manufacturing the semiconductor device A will be described.

First, as a member for forming the insulating substrate 1, a belt-like film substrate 1a as shown in FIG. 3 is used. A large number of conductive wiring patterns P each including a plurality of conductive wirings 10 are provided on the surface of the film substrate 1a at regular intervals in the longitudinal direction of the film substrate 1a. Although not shown in FIG. 3, in practice, as shown in FIG. 4, a resist layer 12 covering the plurality of conductive wires 10 is provided on the surface of the film substrate 1a. The resist layer 12 also forms a convex step 13. The film substrate 1a is also provided with a plurality of through holes 14 for joining the solder bumps 5 later.

As shown in FIG. 5, the film substrate 1a
The semiconductor chip 3 is bonded onto the resist layer 12 after applying the adhesive 2. In this step, after the adhesive 2 is applied in a flowable liquid or paste state, the semiconductor chip 3 is placed thereon, and the upper surface of the semiconductor chip 3 is turned downward while heating the adhesive 2. Perform while pressing. In addition, the adhesive 2 is applied to the periphery of the semiconductor chip 3 so as to protrude slightly by a small amount, so that a cavity is not formed in the adhesive 2. 5 and 6 until the adhesive 2 is cured by heating.
As shown by the arrow N1, there is a possibility that the adhesive 2 flows in all directions. However, even if such a situation occurs, the adhesive 2 is blocked by the convex step 13. Therefore, the adhesive 2 can be prevented from flowing to the plurality of terminal portions 11 located outside the step portion 13.

After the bonding operation of the semiconductor chip 3, the bonding operation of the wire W to each electrode 30 and each terminal portion 11 is performed. Next, the sealing resin 4 is formed by a resin molding process using a mold, and further, a solder bump 5 is formed. Thereafter, the film substrate 1a is cut or punched so as to be used as the insulating substrate 1. Through such a series of operation steps, a large number of semiconductor devices A can be sequentially produced from the belt-shaped film substrate 1a.

In the semiconductor device A, a plurality of terminals 11
The bonding operation of the wires W to the plurality of terminal portions 11 can be performed appropriately because the adhesive 2 can be prevented from being unduly attached to the surface of the wire. In particular, since the convex step portion 13 is formed so as to surround the entire periphery of the application region of the adhesive 2, the surface of the plurality of terminal portions 11 is more reliably prevented from being stained by the adhesive 12. Can be prevented.

FIG. 7 is a sectional view showing another example of the semiconductor device according to the present invention. FIG. 8 is a schematic perspective view of a main part showing a conductive wiring pattern of an insulating substrate used in the semiconductor device shown in FIG. 7 and the subsequent drawings, the same parts as those in the previous embodiment are denoted by the same reference numerals.

The semiconductor device Aa shown in FIG.
The semiconductor device A is common in that a convex step 13A is provided between the bonding portion of the semiconductor chip 3 and the plurality of terminal portions 11 on the surface of the semiconductor device A. However, the step 13A is formed on the plurality of conductive wires 10A by the resist layer 1A.
2 is formed. More specifically, as shown well in FIG.
0A is a zigzag shape, a crank shape, or a substantially U-shaped shape in a plan view of an intermediate portion from one end 10 ′ to which the solder bump 5 is joined to the terminal 11, which is the other end. The conductive wiring 10A
Is formed in a convex shape as compared with the surface of the insulating substrate 1 itself. Therefore, when a resist layer 12 having a uniform thickness is formed on the surface of the insulating substrate 1 or the surface of each conductive wiring 10A, the conductive wiring 10
The height of the portion where A is formed is higher than the other portions, and this is one or a plurality of protruding steps 13A.

Also in the semiconductor device Aa, the flow of the adhesive 2 toward the plurality of terminals 11 can be prevented by the steps 13A, and the wire bonding to each terminal 11 can be appropriately performed. . As described above, in the present invention, a configuration may be employed in which a step for preventing the flow of the adhesive is provided by utilizing the thickness of the conductive wiring pattern formed on the insulating substrate 1. Further, in the present invention, a convex step is formed by providing other substances or members on the insulating substrate without using the conductive wiring pattern or the resist layer, thereby preventing the flow of the adhesive. It does not matter.

FIG. 9 is a sectional view showing another example of the semiconductor device according to the present invention. FIG. 10 is a perspective plan view showing another example of the semiconductor device according to the present invention.

In the semiconductor device Ab shown in FIG. 9, a concave step 13B is provided on the surface of the insulating substrate 1B. The step portion 13B is provided by directly forming a concave groove on the surface of the insulating substrate 1B, and has a plan view shape similar to that of the step portion 13 of the semiconductor device A described above, for example. Adhesive 2 inside the region where the portion 11 is formed
And a hollow rectangular shape surrounding the application region.

In the semiconductor device Ab, when the adhesive 2 flows in all directions in the manufacturing process, the adhesive 2 is dropped into the concave step 13B, whereby the adhesive 2 is removed. The plurality of terminals 1
Flow in one direction can be prevented or suppressed. Thus, the step portion in the present invention may be not only a convex shape but also a concave shape. Of course, a step portion combining a convex shape and a concave shape may be used. The height or depth of the step portion in the present invention cannot be specified unconditionally due to the relationship with the viscosity of the adhesive, etc., and specific numerical values are not particularly limited. However, even when the step of the convex step is set to several tens of μm, an effect of considerably preventing the flow of the adhesive can be expected.

When a concave step is formed on the insulating substrate, it is necessary to take care that the presence of the step does not cause a shortage in the strength of the insulating substrate. Therefore, the means for forming the concave step is suitable when the thickness of the insulating substrate is relatively large or when the insulating substrate is made of a material having excellent strength. Also, when the material of the insulating substrate is made of, for example, glass epoxy resin, a concave step can be easily formed by pressing an appropriate jig against the surface of the insulating substrate, and the manufacturing thereof is easy. Can be. The concave step 13B has a configuration in which a part of the resist layer 12 exists on a concave groove formed on the surface of the insulating substrate 1B. However, in the present invention, instead of this, for example, a groove may be formed only in the resist layer 12 without forming a groove in the insulating substrate 1B itself, and this may be a concave step. Further, in the present invention, the convex or concave step does not necessarily need to be formed using a resist layer, and for example, a groove directly provided on the surface of the insulating substrate is used to directly block the flow of the adhesive. It is good also as a step part.

In a semiconductor device Ac shown in FIG. 10, a plurality of terminal portions 11 of an insulating substrate 1C are provided only on the left and right sides of a semiconductor chip 3C, and between the plurality of terminal portions 11 and the semiconductor chip 3C. Is a convex or concave step 13
C and 13C are provided in a linear form in plan view. In the semiconductor device Ac, even when the adhesive 2 spreads in all directions, the adhesive 13 can be prevented from flowing into the surfaces of the plurality of terminals 11 by the steps 13C, 13C. Further, the flow of the adhesive spreading in the direction of arrow N2 in the figure cannot be stopped by the steps 13C, 13C, but there is no particular problem even if the adhesive spreads relatively large in that direction. in this way,
The step portion in the present invention need not always be provided so as to surround the periphery of the bonding portion of the semiconductor chip. What is essential is that the step portion is provided at least between the bonding portion of the semiconductor chip and the terminal portion of the insulating substrate. Of course, the specific number of steps does not matter.

The present invention is not limited to the above embodiment. The specific configuration of each part of the semiconductor device according to the present invention can be variously changed in design. Further, the specific configuration of each operation step of the method for manufacturing a semiconductor device according to the present invention can be variously changed. The insulating substrate according to the present invention is a concept that excludes a substrate made of a metal or other conductive member such as a lead frame, and any material made of an insulating member is not particularly limited to a specific material. Absent.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an example of a semiconductor device according to the present invention.

FIG. 2 is a plan perspective view of the semiconductor device shown in FIG. 1;

FIG. 3 is a perspective view of an essential part showing an example of a film substrate for forming an insulating substrate.

FIG. 4 is a sectional view of a main part of a film substrate having a resist layer.

FIG. 5 is a fragmentary cross-sectional view showing a step of bonding a semiconductor chip onto a film substrate.

FIG. 6 is a plan view of a main part of FIG. 5;

FIG. 7 is a sectional view showing another example of the semiconductor device according to the present invention.

8 is a schematic perspective view of a main part showing a conductive wiring pattern of an insulating substrate used in the semiconductor device shown in FIG. 7;

FIG. 9 is a sectional view showing another example of the semiconductor device according to the present invention.

FIG. 10 is a perspective plan view showing another example of the semiconductor device according to the present invention.

FIG. 11 is a sectional view of a main part showing an example of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating substrate 1a Film substrate (insulating substrate) 2 Adhesive 3,3C semiconductor chip 4 Sealing resin 5 Solder bump 11 Terminal part 12 Resist layer 13,13A-13C Step part 30 Electrode W wire A, Aa-Ac Semiconductor device

Claims (3)

[Claims] 1. An insulating substrate having a terminal portion on a surface thereof, and a semiconductor chip adhered on the surface of the insulating substrate via an adhesive, wherein electrodes of the semiconductor chip and electrodes of the insulating substrate are provided. The terminal unit is a semiconductor device connected via a wire, and the adhesive is not applied between the bonding portion of the semiconductor chip and the terminal portion on the surface of the insulating substrate. A semiconductor device, comprising: a convex or concave step that can prevent a flow into a terminal portion of the insulating substrate in a cured state. 2. The method according to claim 1, wherein the step is formed by forming a part of the resist layer provided on the surface of the insulating substrate into a convex shape, or forming a concave groove on the surface of the insulating substrate or the resist layer provided on the surface thereof. The semiconductor device according to claim 1, wherein the semiconductor device is provided by being formed. 3. A step of bonding a semiconductor chip on the surface of the insulating substrate via an adhesive, and a step of connecting an electrode of the semiconductor chip and a terminal on the surface of the insulating substrate via a wire. The method of manufacturing a semiconductor device, wherein, as the insulating substrate, between the bonding portion of the semiconductor chip and the terminal portion, the adhesive flows into the terminal portion of the insulating substrate in an uncured state. A method of manufacturing a semiconductor device, comprising: using a semiconductor device provided with a convex or concave step portion capable of preventing the formation of a semiconductor device.