JP4107518B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number
JP4107518B2
JP4107518B2 JP18755497A JP18755497A JP4107518B2 JP 4107518 B2 JP4107518 B2 JP 4107518B2 JP 18755497 A JP18755497 A JP 18755497A JP 18755497 A JP18755497 A JP 18755497A JP 4107518 B2 JP4107518 B2 JP 4107518B2
Authority
JP
Japan
Prior art keywords
processing chamber
electrode
plasma
magnets
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP18755497A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10152775A (ja
JPH10152775A5 (enExample
Inventor
地塩 輿水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP18755497A priority Critical patent/JP4107518B2/ja
Publication of JPH10152775A publication Critical patent/JPH10152775A/ja
Publication of JPH10152775A5 publication Critical patent/JPH10152775A5/ja
Application granted granted Critical
Publication of JP4107518B2 publication Critical patent/JP4107518B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP18755497A 1996-07-03 1997-06-27 プラズマ処理装置 Expired - Fee Related JP4107518B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18755497A JP4107518B2 (ja) 1996-07-03 1997-06-27 プラズマ処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP19398796 1996-07-03
JP8-193987 1996-07-03
JP18755497A JP4107518B2 (ja) 1996-07-03 1997-06-27 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JPH10152775A JPH10152775A (ja) 1998-06-09
JPH10152775A5 JPH10152775A5 (enExample) 2005-05-12
JP4107518B2 true JP4107518B2 (ja) 2008-06-25

Family

ID=26504433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18755497A Expired - Fee Related JP4107518B2 (ja) 1996-07-03 1997-06-27 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JP4107518B2 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8895454B2 (en) 2013-01-21 2014-11-25 Tokyo Electron Limited Etching method of multilayer film
US9390943B2 (en) 2012-02-14 2016-07-12 Tokyo Electron Limited Substrate processing apparatus
KR20160141711A (ko) 2014-04-09 2016-12-09 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
US10297428B2 (en) 2014-05-19 2019-05-21 Tokyo Electron Limited Plasma processing apparatus
KR20190104436A (ko) 2012-01-18 2019-09-09 도쿄엘렉트론가부시키가이샤 기판 처리 방법
US12266512B2 (en) 2022-04-01 2025-04-01 Semes Co., Ltd. Plasma processing apparatus

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073790A (ja) * 2004-09-02 2006-03-16 Tokyo Institute Of Technology プラズマエッチング装置
JP5711581B2 (ja) * 2011-03-25 2015-05-07 東京エレクトロン株式会社 プラズマ処理装置
CN111910162A (zh) * 2020-08-05 2020-11-10 Tcl华星光电技术有限公司 磁控溅射装置及方法
CN120183990A (zh) * 2023-12-20 2025-06-20 北京北方华创微电子装备有限公司 一种上电极结构、半导体工艺腔室及半导体工艺设备
CN117894662B (zh) * 2024-01-15 2024-10-25 北京北方华创微电子装备有限公司 一种工艺腔室及半导体工艺设备

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190104436A (ko) 2012-01-18 2019-09-09 도쿄엘렉트론가부시키가이샤 기판 처리 방법
US10651012B2 (en) 2012-01-18 2020-05-12 Tokyo Electron Limited Substrate processing method
US9390943B2 (en) 2012-02-14 2016-07-12 Tokyo Electron Limited Substrate processing apparatus
US8895454B2 (en) 2013-01-21 2014-11-25 Tokyo Electron Limited Etching method of multilayer film
KR20160141711A (ko) 2014-04-09 2016-12-09 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
US10074545B2 (en) 2014-04-09 2018-09-11 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
KR20220021032A (ko) 2014-04-09 2022-02-21 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
KR20240015728A (ko) 2014-04-09 2024-02-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
US10297428B2 (en) 2014-05-19 2019-05-21 Tokyo Electron Limited Plasma processing apparatus
US11133157B2 (en) 2014-05-19 2021-09-28 Tokyo Electron Limited Plasma processing apparatus
US12266512B2 (en) 2022-04-01 2025-04-01 Semes Co., Ltd. Plasma processing apparatus

Also Published As

Publication number Publication date
JPH10152775A (ja) 1998-06-09

Similar Documents

Publication Publication Date Title
US6000360A (en) Plasma processing apparatus
JP5759718B2 (ja) プラズマ処理装置
US7837828B2 (en) Substrate supporting structure for semiconductor processing, and plasma processing device
JP3343200B2 (ja) プラズマ処理装置
JP3375302B2 (ja) マグネトロンプラズマ処理装置および処理方法
JP6564946B2 (ja) プラズマ処理装置
JP4812991B2 (ja) プラズマ処理装置
JP5710318B2 (ja) プラズマ処理装置
JP4377698B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
JP4255747B2 (ja) プラズマ処理装置及びプラズマ処理方法
EP0829900A2 (en) Plasma process device
JPH08264515A (ja) プラズマ処理装置、処理装置及びエッチング処理装置
JP4107518B2 (ja) プラズマ処理装置
JP7580186B2 (ja) 基板処理装置
KR20200101287A (ko) 기판 처리 장치
JP3311812B2 (ja) 静電チャック
KR20140116811A (ko) 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JP4566373B2 (ja) 酸化膜エッチング方法
KR20010006989A (ko) 마그네트론 플라즈마처리장치 및 처리방법
US6261428B1 (en) Magnetron plasma process apparatus
CN100378923C (zh) 磁控等离子体处理装置
JP4031691B2 (ja) プラズマ処理装置およびプラズマ処理方法
JPH09186141A (ja) プラズマ処理装置
JP5661513B2 (ja) プラズマ処理装置
JP2010212321A (ja) 半導体製造装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040625

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040625

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070827

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070904

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071030

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071120

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071219

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080325

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080328

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110411

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees