JP4105355B2 - 集積センサアレイの製造方法 - Google Patents

集積センサアレイの製造方法 Download PDF

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Publication number
JP4105355B2
JP4105355B2 JP2000014955A JP2000014955A JP4105355B2 JP 4105355 B2 JP4105355 B2 JP 4105355B2 JP 2000014955 A JP2000014955 A JP 2000014955A JP 2000014955 A JP2000014955 A JP 2000014955A JP 4105355 B2 JP4105355 B2 JP 4105355B2
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Japan
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shadow mask
resist
mask
resist mask
shadow
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Expired - Fee Related
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JP2000014955A
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English (en)
Japanese (ja)
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JP2000221161A (ja
Inventor
フェイェーマン ペール−エリック
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アプライドセンサー スウェーデン アーベー
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP2000014955A 1999-01-25 2000-01-24 集積センサアレイの製造方法 Expired - Fee Related JP4105355B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9900239A SE523918C2 (sv) 1999-01-25 1999-01-25 Förfarande för framställning av integrerade sensorgrupper på ett gemensamt substrat samt en mask för användning vid förfarandet
SE9900239-6 1999-01-25

Publications (2)

Publication Number Publication Date
JP2000221161A JP2000221161A (ja) 2000-08-11
JP4105355B2 true JP4105355B2 (ja) 2008-06-25

Family

ID=20414232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000014955A Expired - Fee Related JP4105355B2 (ja) 1999-01-25 2000-01-24 集積センサアレイの製造方法

Country Status (6)

Country Link
US (1) US6410445B1 (enExample)
EP (1) EP1022561B1 (enExample)
JP (1) JP4105355B2 (enExample)
AT (1) ATE346290T1 (enExample)
DE (1) DE60031899T2 (enExample)
SE (1) SE523918C2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7232694B2 (en) * 2004-09-28 2007-06-19 Advantech Global, Ltd. System and method for active array temperature sensing and cooling
JP5384752B2 (ja) * 2010-12-27 2014-01-08 シャープ株式会社 蒸着膜の形成方法及び表示装置の製造方法
JP5384751B2 (ja) 2010-12-27 2014-01-08 シャープ株式会社 蒸着膜の形成方法及び表示装置の製造方法
US8673791B2 (en) 2012-05-25 2014-03-18 International Business Machines Corporation Method and apparatus for substrate-mask alignment
WO2024025475A1 (en) * 2022-07-29 2024-02-01 Ams-Osram Asia Pacific Pte. Ltd. Method of manufacturing an optical device, and optical device

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2857251A (en) 1953-01-28 1958-10-21 Atlantic Refining Co Process and dual-detector apparatus for analyzing gases
US3595621A (en) 1968-09-30 1971-07-27 Anthony John Andreatch Catalytic analyzer
US4169126A (en) 1976-09-03 1979-09-25 Johnson, Matthey & Co., Limited Temperature-responsive device
US4321322A (en) 1979-06-18 1982-03-23 Ahnell Joseph E Pulsed voltammetric detection of microorganisms
DE3151891A1 (de) 1981-12-30 1983-07-14 Zimmer, Günter, Dr.rer. nat., 4600 Dortmund Halbleiter-sensor fuer die messung der konzentration von teilchen in fluiden
CS231026B1 (en) 1982-09-27 1984-09-17 Lubomir Serak Method of voltmetric determination of oxygen and sensor to perform this method
CH665908A5 (de) 1983-08-30 1988-06-15 Cerberus Ag Vorrichtung zum selektiven detektieren der gasfoermigen bestandteile von gasgemischen in luft mittels eines gassensors.
US4897162A (en) 1986-11-14 1990-01-30 The Cleveland Clinic Foundation Pulse voltammetry
DE3729286A1 (de) 1987-09-02 1989-03-16 Draegerwerk Ag Messgeraet zur analyse eines gasgemisches
JPH0695082B2 (ja) 1987-10-08 1994-11-24 新コスモス電機株式会社 吸引式オゾンガス検知器
US4875083A (en) 1987-10-26 1989-10-17 North Carolina State University Metal-insulator-semiconductor capacitor formed on silicon carbide
US5120421A (en) * 1990-08-31 1992-06-09 The United States Of America As Represented By The United States Department Of Energy Electrochemical sensor/detector system and method
JPH0572163A (ja) 1990-11-30 1993-03-23 Mitsui Mining Co Ltd 半導体式ガスセンサー
NL9002750A (nl) 1990-12-13 1992-07-01 Imec Inter Uni Micro Electr Sensor van het diode type.
GB9114018D0 (en) * 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
JPH05240838A (ja) 1992-02-27 1993-09-21 Kagome Co Ltd 加工飲食品に含まれるジアセチルの測定方法
US5332681A (en) 1992-06-12 1994-07-26 The United States Of America As Represented By The Secretary Of The Navy Method of making a semiconductor device by forming a nanochannel mask
US5285084A (en) 1992-09-02 1994-02-08 Kobe Steel Usa Diamond schottky diodes and gas sensors fabricated therefrom
US5323022A (en) 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
JP3266699B2 (ja) 1993-06-22 2002-03-18 株式会社日立製作所 触媒の評価方法及び触媒効率制御方法ならびにＮＯｘ浄化触媒評価装置
JP3496307B2 (ja) 1994-02-18 2004-02-09 株式会社デンソー 触媒劣化検知法及び空燃比センサ
SE503265C2 (sv) 1994-09-23 1996-04-29 Forskarpatent Ab Förfarande och anordning för gasdetektion
WO1997021094A1 (en) * 1995-12-01 1997-06-12 Innogenetics N.V. Impedimetric detection system and method of production thereof
US5691215A (en) 1996-08-26 1997-11-25 Industrial Technology Research Institute Method for fabricating a sub-half micron MOSFET device with insulator filled shallow trenches planarized via use of negative photoresist and de-focus exposure
SE524102C2 (sv) 1999-06-04 2004-06-29 Appliedsensor Sweden Ab Mikro-hotplate-anordning med integrerad gaskänslig fälteffektsensor

Also Published As

Publication number Publication date
SE523918C2 (sv) 2004-06-01
EP1022561A3 (en) 2004-10-20
JP2000221161A (ja) 2000-08-11
US6410445B1 (en) 2002-06-25
EP1022561A2 (en) 2000-07-26
DE60031899T2 (de) 2007-06-21
SE9900239L (enExample) 2000-07-26
EP1022561B1 (en) 2006-11-22
SE9900239D0 (sv) 1999-01-25
ATE346290T1 (de) 2006-12-15
DE60031899D1 (de) 2007-01-04

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