JP4105284B2 - Vacuum deposition system - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vacuum film forming apparatus. More specifically, the present invention relates to a vacuum film forming apparatus improved to prevent scattering of particles.
[0002]
[Prior art]
In general, an ion plating apparatus and a plasma CVD apparatus are known as vacuum film forming apparatuses using plasma. As an ion plating apparatus, for example, an apparatus using a pressure gradient plasma gun or an HCD plasma gun, which is an arc discharge plasma source, is known. Such an ion plating apparatus includes a plasma source (plasma beam generator), and generates a plasma beam between a hearth (anode) disposed in a vacuum film forming chamber and the plasma source, thereby generating a hearth. The vapor deposition material placed on top is heated and evaporated. The evaporated metal particles from the vapor deposition material are ionized by the plasma beam, and the ion particles adhere to the negative-voltage substrate surface to form a film on the substrate.
[0003]
With reference to FIG. 3, this kind of ion plating apparatus will be schematically described. The ion plating apparatus includes an airtight vacuum film forming chamber 1, and a plasma source (for example, a pressure gradient plasma gun) 10 is attached to the vacuum film forming chamber 1 through a guide tube 2. Yes. A plasma beam guide steering coil 3 is disposed outside the guide tube 2.
[0004]
A substrate B as an object to be processed is arranged in the vacuum film forming chamber 1 while being supported by the transfer device 4, and a DC power supply for negative bias is connected to the substrate B. A hearth (anode) 5 is disposed on the bottom surface of the vacuum film formation chamber 1 so as to face the substrate B.
[0005]
In the above ion plating apparatus, when the plasma source is discharged, a plasma beam P is generated, and this plasma beam P is guided by the steering coil 3 and reaches the hearth 5.
When a plasma beam is applied to the hearth 5, the vapor deposition material stored in the hearth 5 is Joule-heated and evaporates. The evaporated metal particles are ionized by the plasma beam P, adhere to the surface of the substrate B to which a negative voltage is applied, and a film is formed on the substrate B.
[0006]
In the plasma CVD apparatus, the vacuum film formation chamber is evacuated and a source gas is introduced from a source gas introduction port, a plasma beam is generated from a plasma source and guided to the anode, and a film is formed on the substrate by the plasma. However, the configurations of the vacuum film forming chamber and the plasma source are substantially the same.
[0007]
[Problems to be solved by the invention]
In the vacuum film forming apparatus, the evaporated metal particles fly upward in the vacuum film forming chamber 1 and deposit not only on the substrate B but also on the side wall surface of the vacuum film forming chamber 1, and the adhering matter is peeled off from the side wall. If it is scattered, it causes particles and deteriorates the film formation quality. Further, removing the deposits deposited on the side wall of the vacuum film formation chamber 1 requires a great deal of labor, and further reduces the operation efficiency.
Therefore, there is an apparatus in which a deposition plate 11 is provided on the inner surface of the side wall of the vacuum film forming chamber 1 so that the deposit does not directly deposit on the inner surface of the side wall of the vacuum film forming chamber 1. If the deposits are deposited on the deposition plate 11 and the adhering matter peels off from the deposition plate 11 and scatters, it causes particles and degrades the film formation quality.
By the way, the cause of the scattering of the deposits deposited on the side wall of the vacuum film forming chamber 1 and the deposition preventing plate 11 is 1) due to the film stress, 2) the film thickness exceeding the adhesion force and falling heavy. (1) Decrease in adhesive force due to repeated heating and cooling, (4) Possible due to thermal strain such as adhesion prevention plate. In particular, the temperature above the plasma beam passage hole on the side wall of the vacuum film forming chamber 1 is high, and the temperature difference between heating and cooling becomes large, and the scattered matter increases.
[0008]
In view of such circumstances, the present invention cuts off the heat emitted from the plasma beam passage hole on the side wall of the vacuum film formation chamber, prevents the deposits from scattering above the plasma beam passage hole, and has high film formation quality. An object is to provide a vacuum film forming apparatus.
[0009]
[Means for Solving the Problems]
In the vacuum film forming apparatus according to claim 1, a plasma source is attached to a side wall of the vacuum film forming chamber, and a plasma beam generated from the plasma source is guided to the anode on the bottom surface of the vacuum film forming chamber and is applied to the surface of the object to be processed. A vacuum film forming apparatus for forming a film, wherein a heat shield plate is attached immediately above a plasma beam passage hole on a side wall of the vacuum film forming chamber.
[0010]
According to the first aspect of the present invention, the heat shield plate cuts off the heat from the plasma beam passage hole, thereby reducing the amount of heat applied to the side wall and the deposition preventing plate. Therefore, repetition of heating / cooling thermal cycle and distortion due to heat of the side wall and the deposition preventing plate are reduced, and scattering of deposits can be prevented.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Next, an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a longitudinal sectional view of a vacuum film forming apparatus according to an embodiment of the present invention, and FIG. 2 is a view taken along the line II in FIG.
[0012]
The vacuum film forming chamber 1, the guide tube 2, the steering coil 3, the transfer device 4, the hearth (anode) 5, the plasma source 10 and the like in the vacuum film forming apparatus shown in FIGS. It is.
The vacuum film forming apparatus of this embodiment is characterized by the following points. That is, when the side wall 1a of the vacuum film formation chamber 1 and the deposition plate 11 are attached, a plasma beam passage hole 13 is formed in the deposition plate 11 so as to match the opening at the mounting side end of the guide tube 2. The heat shield plate 12 is attached immediately above.
The heat shield plate 12 is a flat plate and has a width slightly shorter than the internal dimensions of the vacuum film formation chamber 1. The material is preferably a metal such as stainless steel, aluminum or copper because it has heat resistance and does not generate gas.
In the present embodiment, the heat shield plate 12 can block the heat from the plasma beam passage hole 13 and reduce the amount of heat applied to the side wall 1a and the deposition preventing plate 11 thereabove. Therefore, repeated heating / cooling heat cycles and distortion due to heat of the side wall 1a and the deposition preventing plate 11 are reduced, and scattering of deposits can be prevented as much as possible. Therefore, the film formation quality can be increased.
[0013]
【The invention's effect】
According to the vacuum film-forming apparatus of claim 1, the heat is shielded by the heat shield plate, and the repeated heat / cooling heat cycle and the distortion caused by the heat of the side wall and the deposition plate are reduced, and the scattered matter is scattered. Can be prevented, and the film formation quality can be improved.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view of a vacuum film forming apparatus according to an embodiment of the present invention.
2 is a view taken along the line II-II in FIG.
FIG. 3 is a longitudinal sectional view of a conventional vacuum film forming apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Vacuum film-forming chamber 11 Depositing plate 12 Heat shield plate

Claims (1)

A vacuum film forming apparatus in which a plasma source is attached to a side wall of a vacuum film forming chamber and a plasma beam generated from the plasma source is guided to an anode on the bottom surface of the vacuum film forming chamber to form a film on the surface of an object to be processed. And
A vacuum film forming apparatus, characterized in that a heat shield plate is attached immediately above the plasma beam passage hole on the side wall of the vacuum film forming chamber.

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