JPS60120515A - Thin film forming device - Google Patents

Abstract

PURPOSE:To reduce film defects due to generation or adhesion to a substrate of foreign matters by forming a film made of metal or an insulating material on an exposed surface inside the thin film forming device of a shield plate, a substrate holding member and etc. in said device by plasma spray coating. CONSTITUTION:The surface exposed in a spattering chamber 2 is subjected to plasma spray coating with Mo to form a plasma spray coating film 15 of Mo. A substrate 11 is supported by a substrate holder 12 with facing a target 7 through a window 4a of a shield plate 4. Meanwhile, plasma is generated by a spattering electrode 5 and an anode 6 and excited ions are bombarded to a target 7. Consequently, particles of Mo and Si fly in the spattering chamber 2 and adhere to and deposit on a surface of the substrate 11 when a shutter 10 opens so as to form a thin film of MoSi2. At this time, the particles of Mo and Si adhere to the shield plate 4, the anode 6, the shutter 10, the substrate holder 12 and an inside surface of the chamber 1 for forming the film and because the plasma spray coating film 15 of Mo is formed over the surfaces of these members, the adhering films 16 are not exfoliated easily.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a thin film forming technique, and more particularly to a thin film forming technique that aims to reduce the density of film defects when forming a thin film by a vapor deposition method or a sputtering method.

BACKGROUND TECHNOLOGY Generally, the development of semiconductor devices requires the process of forming thin films of metals or insulating materials, and thin film forming apparatuses using vapor deposition or sputtering methods are used (Japanese Unexamined Patent Publication No. 75370/1982). . This type of thin film forming equipment.

Particles ejected from the evaporation source or target adhere to a substrate (semiconductor wafer, etc.) placed opposite them to form a thin film. They also adhere to the holder and the inner wall of the device. However, these shield plates, substrate holding plates, device walls, etc. are usually made of materials such as stainless steel, so particles have poor adhesion and the formed film This is because the surface of materials such as stainless steel is flat, so the adhesion to the particles is low, or internal stress is generated in the particles due to the difference in thermal expansion coefficient between the stainless steel and the particles. This is thought to be the cause.For this reason, the peeled film pieces float inside the device, and some of them become foreign matter and adhere to the substrate surface, causing film defects on the substrate.

Possible countermeasures to this problem include roughening the surface of the shield plate, etc., and configuring the equipment to match the thermal expansion of the adhered film material and the shield plate, etc., but it is possible to The present inventors have revealed that it is difficult to prevent such defects, and it is not possible to reduce the density of film defects.

[Object of the Invention] The object of the present invention is to provide a thin film that can prevent the peeling of the film adhered within the device, thereby preventing the adhesion of foreign matter to the thin film formed on the substrate, and reducing the film defect density. Our goal is to provide formation technology.

The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

Summary of the Invention] A brief summary of typical inventions disclosed in this application is as follows σ).

In other words, by forming a film of metal or insulating material on the exposed surface inside the device (such as a shield plate or substrate holder in the thin film forming device) by plasma spraying, the film is temporarily attached to the exposed surface when forming the thin film on the substrate. The adhesive strength of the adhered particles by the thin film material is increased, thereby preventing the adhering film from peeling off, thereby achieving reduction in film defects due to the generation of foreign matter or the adhesion of the foreign matter to the substrate.

〔Example〕

FIG. 1 shows an embodiment in which the present invention is applied to a sputtering apparatus. In Figure Vc'i6, 1 is a chamber whose interior can be kept airtight, and is divided into a sputtering chamber 2 on the right side and a load chamber 3 on the left side by a shield plate 4 extending below L [2]. Inside the sputtering chamber 2, there is provided a sputtering electrode 5 with a part protruding outside the chamber 1, and an anode 6 formed in a cylindrical shape so as to surround the sputtering electrode apart from the sputtering electrode 5. The sputter electrode 5 integrally supports a target 7 as a sputter thin film material on its inner surface. In this example, a case is shown in which a MoSi film (molybdenum silicide film) is formed, and the target 7 has a structure in which silicon 8 and molybdenum 9 are juxtaposed.

Further, a shutter 10 for opening and closing the opening of the anode 6 is provided in front of the anode 6, and is operated by a drive mechanism not shown. Furthermore, a window 4a is formed in the shield plate 4 at a position facing the target 7Vc, and a substrate holder 12 supporting a substrate 11 such as a semiconductor wafer is disposed behind the window 4a.

The shield plate 4. Anode 6, Sha Ivy 1
0. Substrate holder 12. The chamber 1 is made of a metal material such as stainless steel, and the surfaces thereof, in other words, the surfaces exposed to the sputtering chamber 2 are coated with M.

(Molybdenum) is plasma sprayed to form a plasma sprayed film of MO with a thickness of approximately 200 μm.

Note that the load chamber 3 is equipped with a conveyor 1 such as a belt conveyor.
3 is installed inside the chamber 1, and the substrate 11 is carried in and out through a carry-in shutter 14 at the other end of the chamber 1. Further, the sputtering chamber 2 and the load chamber 3 are brought to a vacuum pressure by an exhaust means (not shown), and the inside of the sputtering chamber is maintained at a gas atmosphere that requires PJt.

According to the above configuration, the substrate 11 carried into the load chamber 3 by the carrier 13 is supported by the substrate holder 12 and is positioned opposite to the target 7 through the window 4a of the shield plate 4. - 10,000, plasma is generated in the anode 6 in front of the target 7 by the action of the sputtering electrode 5 and the anode 6, and the excited ions collide with the target 7. As a result, Mo and Si particles are knocked out and flown in the snow ivy chamber 2, and when the shutter 10 is opened, they adhere to and accumulate on the surface of the substrate 11, forming a thin film of MoSi on the substrate 11. will form on the surface.

At this time, the Mo and Si particles are transferred to the shield plate 4. Anode 6, shutter 10. Substrate holder 12, chamber 1
However, as shown in the enlarged view in FIG. 2, the MO plasma sprayed film 15 is formed on these surfaces, so the film 16 deposited by sputtering is easily removed. It will not be peeled off. That is, since the surface of the plasma sprayed film 150 is highly uneven, the adhered film 16 breaks in a discontinuous state, and the internal stress generated inside the adhered film 16 is also dispersed, so that only the acting force that leads to peeling is generated. This is also considered to be because the above-mentioned unevenness increases the adhesive area between the plasma sprayed film 15 and the deposited film 16, increasing the adhesive force between them.

This allows 'If 78)' to occur during sputtering film formation.
Preventing the generation of foreign matter due to peeling of the l・i tΔ film 16,
It is possible to prevent foreign matter from adhering to the surface of the substrate 11 and reduce defects in the sputtered film. Incidentally, the defect density on the substrate 11 has been reduced from the conventional 4 defects/cdl to 0.4 defects/cn! was able to be reduced to Also, according to experiments, the same effect is obtained even if the composition of the sputtered film is different, and the material of the plasma sprayed film is also Al, W, etc.
The same result was obtained even when O (tungsten carbide) or the like was used.

〔effect〕

(11) Since a plasma sprayed film is formed on the internally exposed surfaces of the shield plate, substrate holder, etc. of the sputtering device, the adhesion of the film deposited on these internally exposed surfaces during sputtering film formation is improved and the film is easily peeled off. This can suppress or prevent defects caused by peeled film pieces becoming foreign matter.

(2) Since it is possible to reduce defects in sputter film formation simply by forming a plasma sprayed film on the internal exposed surface of the sputter equipment, conventional sputter equipment can be used as is without any design changes, and equipment costs are eliminated. Power increase U can be prevented.

(3) The plasma sprayed film can be formed in the usual manner using existing plasma spraying equipment, and no particularly complicated step-up process is required.

Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the Examples 1 to 1, and can be modified in various ways without departing from the gist thereof. Needless to say. For example, the material for sputtering film formation is not limited to the above-mentioned MoSi and VC, but also Mo, W.
Metal films such as Sin.

It may be an insulating film such as. Further, the material of the plasma sprayed film may be not only MO but also KL, WO, and other materials. It should be noted that the surface of the internal exposed surface in the chamber may be formed to have an uneven surface by using other means instead of using a plasma sprayed film.

[Field of Application] In the above explanation, the invention made by the present inventor was applied to a sputtering apparatus, which is one of the fields of application that formed the background of the invention, but it is not limited to this, and for example, It can be similarly applied to vapor deposition equipment and OVD equipment.

[Brief explanation of the drawing]

FIG. 1 is an overall sectional view of a sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a partially enlarged view. DESCRIPTION OF SYMBOLS 1... Chamber, 2... Sputtering chamber, 3... Load chamber, 4... Shield plate, End... Sputtering electrode, 6...
... Anode, 7... Target, 1o... Shutter, 11... Substrate (wafer), 12... Substrate holder, 15... Plasma sprayed film, 16... Adhesive film. ,Xpa＼

Claims (1)

[Scope of Claims] 1. A thin film forming apparatus for depositing and forming an LC thin film on the surface of a substrate set in a chamber, characterized in that a plasma sprayed film is formed on the internally exposed surface of the apparatus in the chamber. Device. 2. Shield plate and substrate holder installed inside the chamber. The thin film forming apparatus according to claim 1, wherein a plasma sprayed film is formed on each surface of the shutter, the anode, and the inner wall of the chamber. 3. The thin film forming apparatus according to claim 1 or 2, wherein the plasma sprayed film is made of metal such as molybdenum or tungsten or other insulating material. 4. The thin film forming apparatus according to any one of claims 1 to 3, wherein a plasma sprayed film is formed on an exposed internal surface of the sputtering apparatus.