JP4102880B2 - 多層膜構造体、及び素子構造 - Google Patents
多層膜構造体、及び素子構造 Download PDFInfo
- Publication number
- JP4102880B2 JP4102880B2 JP2004046540A JP2004046540A JP4102880B2 JP 4102880 B2 JP4102880 B2 JP 4102880B2 JP 2004046540 A JP2004046540 A JP 2004046540A JP 2004046540 A JP2004046540 A JP 2004046540A JP 4102880 B2 JP4102880 B2 JP 4102880B2
- Authority
- JP
- Japan
- Prior art keywords
- titanium dioxide
- film
- element structure
- mixed crystal
- cobalt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 160
- 239000004408 titanium dioxide Substances 0.000 claims description 80
- 239000013078 crystal Substances 0.000 claims description 53
- 230000005294 ferromagnetic effect Effects 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 20
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 7
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 5
- 229940119177 germanium dioxide Drugs 0.000 claims description 3
- 239000010408 film Substances 0.000 description 86
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 6
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 description 5
- ZARVOZCHNMQIBL-UHFFFAOYSA-N oxygen(2-) titanium(4+) zirconium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4] ZARVOZCHNMQIBL-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000000608 laser ablation Methods 0.000 description 4
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Thin Magnetic Films (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Mram Or Spin Memory Techniques (AREA)
Description
二酸化チタンに対して、二酸化ハフニウム、二酸化ジルコニウム、二酸化ゲルマニウム及び二酸化スズから選ばれる少なくとも一種の混晶物質を混晶化した混晶化二酸化チタンであって膜状の混晶化二酸化チタンを半導体層又は絶縁層として含むとともに、コバルトドープ二酸化チタン膜を強磁性層として含むことを特徴とする、多層膜構造体に関する。
11、13 強磁性層
12 絶縁層
14 反強磁性層
20 GMR素子構造
21、23 強磁性層
22 半導体層
30 MRAM素子構造
31、33 強磁性層
32 絶縁層
36 電極層
40 電界効果型素子構造
41 ベース
42 ゲート絶縁層
47 ゲート電極
48 ソース/ドレイン電極
50 キャリア誘起強磁性素子構造
51 ベース
52 ゲート絶縁層
57 ゲート電極
58 ソース/ドレイン電極
59 ホール電極
Claims (7)
- 二酸化チタンに対して、二酸化ハフニウム、二酸化ジルコニウム、二酸化ゲルマニウム及び二酸化スズから選ばれる少なくとも一種の混晶物質を混晶化した混晶化二酸化チタンであって膜状の混晶化二酸化チタンを半導体層又は絶縁層として含むとともに、コバルトドープ二酸化チタン膜を強磁性層として含むことを特徴とする、多層膜構造体。
- 請求項1に記載の多層膜構造体を含むことを特徴とする、素子構造。
- 前記素子構造はTMR素子として機能することを特徴とする、請求項2に記載の素子構造。
- 前記素子構造はGMR素子として機能することを特徴とする、請求項2に記載の素子構造。
- 前記素子構造はMRAM構造として機能することを特徴とする、請求項2に記載の素子構造。
- 前記素子構造は電界効果型素子として機能することを特徴とする、請求項2に記載の素子構造。
- 前記素子構造はキャリア誘起強磁性素子として機能することを特徴とする、請求項2に記載の素子構造。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004046540A JP4102880B2 (ja) | 2004-02-23 | 2004-02-23 | 多層膜構造体、及び素子構造 |
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---|---|---|---|
JP2004046540A JP4102880B2 (ja) | 2004-02-23 | 2004-02-23 | 多層膜構造体、及び素子構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005231979A JP2005231979A (ja) | 2005-09-02 |
JP4102880B2 true JP4102880B2 (ja) | 2008-06-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004046540A Expired - Lifetime JP4102880B2 (ja) | 2004-02-23 | 2004-02-23 | 多層膜構造体、及び素子構造 |
Country Status (1)
Country | Link |
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JP (1) | JP4102880B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7768042B2 (en) * | 2007-03-29 | 2010-08-03 | Korea Advanced Institute Of Science And Technology | Thin film transistor including titanium oxides as active layer and method of manufacturing the same |
JP5286502B2 (ja) * | 2009-03-27 | 2013-09-11 | 独立行政法人科学技術振興機構 | 強磁性半導体素子 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0756522B2 (ja) * | 1986-01-31 | 1995-06-14 | 日本曹達株式会社 | 光干渉膜 |
JPH1087330A (ja) * | 1996-09-13 | 1998-04-07 | Takeshi Yao | チタン酸ジルコニウム析出物の製造方法 |
JPH10139435A (ja) * | 1996-11-14 | 1998-05-26 | Mitsubishi Materials Corp | (Zr,Sn)TiO4薄膜形成用組成物及び(Zr,Sn)TiO4薄膜の形成方法 |
JPH10236824A (ja) * | 1997-02-27 | 1998-09-08 | Showa Denko Kk | チタニア−ジルコニア系複合酸化物微粉末及びその製造法 |
JP3643948B2 (ja) * | 1999-03-15 | 2005-04-27 | 株式会社豊田中央研究所 | チタニア−ジルコニア系粉末およびその製造方法 |
JP3569763B2 (ja) * | 2000-08-30 | 2004-09-29 | 独立行政法人 科学技術振興機構 | 二酸化チタン・コバルト磁性膜及びその製造方法 |
JP2003238120A (ja) * | 2002-02-15 | 2003-08-27 | Japan Science & Technology Corp | セラミックス複合ナノ構造体とその組成物並びにその製造方法 |
JP4556398B2 (ja) * | 2003-09-02 | 2010-10-06 | 堺化学工業株式会社 | 組成物の製造方法 |
-
2004
- 2004-02-23 JP JP2004046540A patent/JP4102880B2/ja not_active Expired - Lifetime
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JP2005231979A (ja) | 2005-09-02 |
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