JP4089730B2 - ＧａＮ単結晶基板の製造方法 - Google Patents
ＧａＮ単結晶基板の製造方法 Download PDFInfo
- Publication number
- JP4089730B2 JP4089730B2 JP2006034698A JP2006034698A JP4089730B2 JP 4089730 B2 JP4089730 B2 JP 4089730B2 JP 2006034698 A JP2006034698 A JP 2006034698A JP 2006034698 A JP2006034698 A JP 2006034698A JP 4089730 B2 JP4089730 B2 JP 4089730B2
- Authority
- JP
- Japan
- Prior art keywords
- gan
- substrate
- mask
- gaas
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 138
- 239000013078 crystal Substances 0.000 title claims description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 65
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 42
- 239000007789 gas Substances 0.000 claims description 39
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 31
- 238000005498 polishing Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims 2
- 230000035882 stress Effects 0.000 description 53
- 239000010410 layer Substances 0.000 description 51
- 235000012431 wafers Nutrition 0.000 description 42
- 229910052594 sapphire Inorganic materials 0.000 description 34
- 239000010980 sapphire Substances 0.000 description 34
- 239000010409 thin film Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 19
- 229910052799 carbon Inorganic materials 0.000 description 19
- 230000007547 defect Effects 0.000 description 19
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 14
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 239000002131 composite material Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 230000008646 thermal stress Effects 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 6
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241000396922 Pontia daplidice Species 0.000 description 1
- 241001422033 Thestylus Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 235000019219 chocolate Nutrition 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006034698A JP4089730B2 (ja) | 2006-02-13 | 2006-02-13 | ＧａＮ単結晶基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006034698A JP4089730B2 (ja) | 2006-02-13 | 2006-02-13 | ＧａＮ単結晶基板の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17127698A Division JP3788037B2 (ja) | 1998-06-18 | 1998-06-18 | ＧａＮ単結晶基板 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007264022A Division JP2008044844A (ja) | 2007-10-10 | 2007-10-10 | 窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006148159A JP2006148159A (ja) | 2006-06-08 |
| JP2006148159A5 JP2006148159A5 (enExample) | 2007-04-26 |
| JP4089730B2 true JP4089730B2 (ja) | 2008-05-28 |
Family
ID=36627383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006034698A Expired - Lifetime JP4089730B2 (ja) | 2006-02-13 | 2006-02-13 | ＧａＮ単結晶基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4089730B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101172364B1 (ko) * | 2006-11-02 | 2012-08-08 | 삼성코닝정밀소재 주식회사 | 질화갈륨 단결정 기판 및 표면 가공방법 |
| CN113035689A (zh) * | 2021-02-26 | 2021-06-25 | 无锡吴越半导体有限公司 | 一种氮化镓单结晶基板的制造方法 |
-
2006
- 2006-02-13 JP JP2006034698A patent/JP4089730B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006148159A (ja) | 2006-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3788037B2 (ja) | ＧａＮ単結晶基板 | |
| JP3788041B2 (ja) | ＧａＮ単結晶基板の製造方法 | |
| KR100348175B1 (ko) | ＧａＮ단결정기판 및 그 제조방법 | |
| JP3888374B2 (ja) | ＧａＮ単結晶基板の製造方法 | |
| JP4145437B2 (ja) | 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板 | |
| US7981713B2 (en) | Group III-V nitride-based semiconductor substrate, group III-V nitride-based device and method of fabricating the same | |
| KR101749781B1 (ko) | 단결정 기판, 이를 이용하여 얻어지는 ⅲ족 질화물 결정 및 ⅲ족 질화물 결정의 제조방법 | |
| US20080118733A1 (en) | Nitride semiconductor ingot, nitride semiconductor substrate fabricated from the same and method for making nitride semiconductor ingot | |
| JP2003277195A (ja) | Ｉｉｉ−ｖ族窒化物系半導体基板およびその製造方法 | |
| WO2006013957A1 (ja) | Ｇａ含有窒化物半導体単結晶、その製造方法、並びに該結晶を用いた基板およびデバイス | |
| JP7264343B2 (ja) | Ｉｉｉ族窒化物結晶の製造方法および種基板 | |
| JP4089730B2 (ja) | ＧａＮ単結晶基板の製造方法 | |
| JP4288515B2 (ja) | ＧａＮ単結晶基板、ＧａＮ単結晶基板の製造方法、ＧａＮ単結晶基板の上に作製した発光素子及びその製造方法 | |
| US8466471B2 (en) | Nitride semiconductor free-standing substrate and method for making same | |
| JP2006290697A (ja) | 窒化物半導体基板及びその製造方法 | |
| JP3985839B2 (ja) | 単結晶ＧａＮ基板 | |
| JP2006298744A (ja) | Ｇａ含有窒化物半導体単結晶、その製造方法、並びに該結晶を用いた基板およびデバイス | |
| JP2009161433A (ja) | ＧａＮ単結晶基板、ＧａＮ単結晶基板の製造方法、ＧａＮ単結晶基板の上に作製した発光素子及びその製造方法 | |
| JP2008044844A (ja) | 窒化物半導体素子 | |
| JP4003802B2 (ja) | 窒化ガリウム結晶の成長方法 | |
| KR20090077471A (ko) | 질화갈륨 성장용 서셉터 및 질화갈륨 성장 방법 | |
| JP4810517B2 (ja) | Ｉｉｉ−ｖ族窒化物系半導体基板 | |
| JP4479706B2 (ja) | ＧａＮ自立基板の製造方法 | |
| JP2006306722A (ja) | ＧａＮ単結晶基板の製造方法及びＧａＮ単結晶基板 | |
| JP5182396B2 (ja) | 窒化物半導体自立基板及び発光装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070209 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20070213 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070307 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20070402 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070417 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070611 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070911 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071009 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20071115 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080205 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080218 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110307 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110307 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120307 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120307 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130307 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140307 Year of fee payment: 6 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |