JP2006148159A5 - - Google Patents
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- Publication number
- JP2006148159A5 JP2006148159A5 JP2006034698A JP2006034698A JP2006148159A5 JP 2006148159 A5 JP2006148159 A5 JP 2006148159A5 JP 2006034698 A JP2006034698 A JP 2006034698A JP 2006034698 A JP2006034698 A JP 2006034698A JP 2006148159 A5 JP2006148159 A5 JP 2006148159A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- gan
- crystal substrate
- less
- gan single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims 18
- 239000013078 crystal Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 5
- 239000002019 doping agent Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 4
- 230000003287 optical effect Effects 0.000 claims 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006034698A JP4089730B2 (ja) | 2006-02-13 | 2006-02-13 | ＧａＮ単結晶基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006034698A JP4089730B2 (ja) | 2006-02-13 | 2006-02-13 | ＧａＮ単結晶基板の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17127698A Division JP3788037B2 (ja) | 1998-06-18 | 1998-06-18 | ＧａＮ単結晶基板 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007264022A Division JP2008044844A (ja) | 2007-10-10 | 2007-10-10 | 窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006148159A JP2006148159A (ja) | 2006-06-08 |
| JP2006148159A5 true JP2006148159A5 (enExample) | 2007-04-26 |
| JP4089730B2 JP4089730B2 (ja) | 2008-05-28 |
Family
ID=36627383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006034698A Expired - Lifetime JP4089730B2 (ja) | 2006-02-13 | 2006-02-13 | ＧａＮ単結晶基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4089730B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101172364B1 (ko) * | 2006-11-02 | 2012-08-08 | 삼성코닝정밀소재 주식회사 | 질화갈륨 단결정 기판 및 표면 가공방법 |
| CN113035689A (zh) * | 2021-02-26 | 2021-06-25 | 无锡吴越半导体有限公司 | 一种氮化镓单结晶基板的制造方法 |
-
2006
- 2006-02-13 JP JP2006034698A patent/JP4089730B2/ja not_active Expired - Lifetime
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