JP4081580B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4081580B2
JP4081580B2 JP2005182123A JP2005182123A JP4081580B2 JP 4081580 B2 JP4081580 B2 JP 4081580B2 JP 2005182123 A JP2005182123 A JP 2005182123A JP 2005182123 A JP2005182123 A JP 2005182123A JP 4081580 B2 JP4081580 B2 JP 4081580B2
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JP
Japan
Prior art keywords
semiconductor film
wiring
film
light
electrode
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Expired - Fee Related
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JP2005182123A
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English (en)
Japanese (ja)
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JP2006032939A (ja
JP2006032939A5 (https=
Inventor
理 中村
清文 荻野
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005182123A priority Critical patent/JP4081580B2/ja
Publication of JP2006032939A publication Critical patent/JP2006032939A/ja
Publication of JP2006032939A5 publication Critical patent/JP2006032939A5/ja
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Publication of JP4081580B2 publication Critical patent/JP4081580B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005182123A 2005-06-22 2005-06-22 表示装置の作製方法 Expired - Fee Related JP4081580B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005182123A JP4081580B2 (ja) 2005-06-22 2005-06-22 表示装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005182123A JP4081580B2 (ja) 2005-06-22 2005-06-22 表示装置の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003344202A Division JP3923462B2 (ja) 2003-10-02 2003-10-02 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2006032939A JP2006032939A (ja) 2006-02-02
JP2006032939A5 JP2006032939A5 (https=) 2006-11-16
JP4081580B2 true JP4081580B2 (ja) 2008-04-30

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ID=35898854

Family Applications (1)

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JP2005182123A Expired - Fee Related JP4081580B2 (ja) 2005-06-22 2005-06-22 表示装置の作製方法

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JP (1) JP4081580B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1816508A1 (en) 2006-02-02 2007-08-08 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2007233361A (ja) * 2006-02-02 2007-09-13 Semiconductor Energy Lab Co Ltd 表示装置
JP2008066216A (ja) * 2006-09-11 2008-03-21 Seiko Epson Corp 有機エレクトロルミネッセンス装置とその製造方法及び電子機器
US7960261B2 (en) * 2007-03-23 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
JP5537102B2 (ja) * 2009-09-11 2014-07-02 株式会社東芝 半導体装置の製造方法
JP2012108291A (ja) * 2010-11-17 2012-06-07 Toppan Printing Co Ltd カラーフィルタ基板の欠陥修正方法およびカラーフィルタ基板
JP5741832B2 (ja) * 2011-04-27 2015-07-01 大日本印刷株式会社 アクティブマトリックス基板及びアクティブマトリックス基板の製造方法、液晶表示装置
JP2012234864A (ja) * 2011-04-28 2012-11-29 Toshiba Corp 半導体装置及びその製造方法
CN111373843A (zh) * 2017-11-28 2020-07-03 堺显示器制品株式会社 有机el发光元件及其制造方法

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Publication number Publication date
JP2006032939A (ja) 2006-02-02

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