JP4080168B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4080168B2
JP4080168B2 JP2001091569A JP2001091569A JP4080168B2 JP 4080168 B2 JP4080168 B2 JP 4080168B2 JP 2001091569 A JP2001091569 A JP 2001091569A JP 2001091569 A JP2001091569 A JP 2001091569A JP 4080168 B2 JP4080168 B2 JP 4080168B2
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JP
Japan
Prior art keywords
region
thin film
film transistor
channel thin
forming
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Expired - Fee Related
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JP2001091569A
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English (en)
Japanese (ja)
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JP2001352073A (ja
JP2001352073A5 (enExample
Inventor
節男 中嶋
直樹 牧田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Priority to JP2001091569A priority Critical patent/JP4080168B2/ja
Publication of JP2001352073A publication Critical patent/JP2001352073A/ja
Publication of JP2001352073A5 publication Critical patent/JP2001352073A5/ja
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Publication of JP4080168B2 publication Critical patent/JP4080168B2/ja
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001091569A 2000-04-03 2001-03-28 半導体装置の作製方法 Expired - Fee Related JP4080168B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001091569A JP4080168B2 (ja) 2000-04-03 2001-03-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-101576 2000-04-03
JP2000101576 2000-04-03
JP2001091569A JP4080168B2 (ja) 2000-04-03 2001-03-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001352073A JP2001352073A (ja) 2001-12-21
JP2001352073A5 JP2001352073A5 (enExample) 2005-04-07
JP4080168B2 true JP4080168B2 (ja) 2008-04-23

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JP2001091569A Expired - Fee Related JP4080168B2 (ja) 2000-04-03 2001-03-28 半導体装置の作製方法

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JP (1) JP4080168B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4403354B2 (ja) * 2002-09-11 2010-01-27 ソニー株式会社 薄膜回路基板
JP5046464B2 (ja) * 2002-12-18 2012-10-10 株式会社半導体エネルギー研究所 半導体記憶素子の作製方法
TWI220072B (en) 2003-02-19 2004-08-01 Toppoly Optoelectronics Corp TFT structure with LDD region and manufacturing process of the same
JP4510396B2 (ja) * 2003-03-28 2010-07-21 統寶光電股▲分▼有限公司 薄膜トランジスタの製造方法
KR101675113B1 (ko) 2010-01-08 2016-11-11 삼성전자주식회사 트랜지스터 및 그 제조방법
JP6494341B2 (ja) * 2015-03-13 2019-04-03 株式会社ジャパンディスプレイ 表示装置

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Publication number Publication date
JP2001352073A (ja) 2001-12-21

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