JP4073393B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4073393B2 JP4073393B2 JP2003403283A JP2003403283A JP4073393B2 JP 4073393 B2 JP4073393 B2 JP 4073393B2 JP 2003403283 A JP2003403283 A JP 2003403283A JP 2003403283 A JP2003403283 A JP 2003403283A JP 4073393 B2 JP4073393 B2 JP 4073393B2
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- silicate film
- hafnium silicate
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- nitrogen
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- 239000004065 semiconductor Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 99
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052757 nitrogen Inorganic materials 0.000 claims description 26
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 11
- 229910052805 deuterium Inorganic materials 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 description 60
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 60
- 238000000034 method Methods 0.000 description 25
- 238000005121 nitriding Methods 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 150000004767 nitrides Chemical class 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910007991 Si-N Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910006294 Si—N Inorganic materials 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02148—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02159—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing zirconium, e.g. ZrSiOx
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- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
基板上に金属を含有しているシリケート膜を形成する工程と、
ND3ガスを用いることにより、窒素と重水素とを、前記シリケート膜に導入して、元素組成比で10パーセント以上の窒素を前記シリケート膜に含有させる工程と、
を備えるとともに、
前記シリケート膜を形成する工程の後、前記窒素と重水素を前記シリケート膜に導入する工程の前に、熱処理を行う工程を、さらに備えることを特徴とする。
基板上に金属を含有している金属酸化膜を形成する工程と、
ND3ガスを用いることにより、窒素と重水素とを、前記金属酸化膜に導入して、元素組成比で10パーセント以上の窒素を前記金属酸化膜に含有させる工程と、
を備えるとともに、
前記金属酸化膜を形成する工程の後、前記窒素と重水素を前記金属酸化膜に導入する工程の前に、熱処理を行う工程を、さらに備えることを特徴とする。
第1実施形態は、ハフニウムシリケート膜を形成した後に、ND3を用いてN(窒素)とD(重水素)をハフニウムシリケート膜へ導入することにより、Dによりハフニウムシリケート膜中のダングリングボンドが終端され、ハフニウムシリケート膜中の固定電荷密度と界面準位密度がNH3を用いて窒化した場合と比較して減少するようにしたものである。そしてこれにより、ND3の窒化により形成したハフニウムシリケート膜をゲート絶縁膜として用いたトランジスタにおける、電流駆動能力が大幅に向上するようにしたものである。また、ND3窒化により、ハフニウムシリケート膜中にHf-N結合ができにくくなり、リーク電流のパスとなるサイトがDで終端されるようにし、リーク電流が低減するようにしたものである。より詳しくを、以下に説明する。
上述した第1実施形態では、ハフニウムシリケート膜をND3ガスで窒化する際に熱処理を用いたが、このハフニウムシリケート膜を窒化するのにプラズマを励起して行うこともできる。
図12乃至図14は、本実施形態に係る半導体装置の絶縁膜を形成する工程を説明する断面図である。
図16及び図17は、本実施形態に係る半導体装置の絶縁膜を形成する工程を説明する断面図である。
12 ハフニウムシリケート膜
14 絶縁膜
22 ハフニウムシリケート膜
30 シャロートレンチアイソレーション
32 ハフニウムシリケート膜
34 ポリシリコン電極
36、40 ゲート絶縁膜
38 絶縁膜
52 ハフニウムシリケート膜
54 窒化膜
Claims (2)
- 基板上に金属を含有しているシリケート膜を形成する工程と、
ND3ガスを用いることにより、窒素と重水素とを、前記シリケート膜に導入して、元素組成比で10パーセント以上の窒素を前記シリケート膜に含有させる工程と、
を備えるとともに、
前記シリケート膜を形成する工程の後、前記窒素と重水素を前記シリケート膜に導入する工程の前に、熱処理を行う工程を、さらに備えることを特徴とする半導体装置の製造方法。 - 基板上に金属を含有している金属酸化膜を形成する工程と、
ND3ガスを用いることにより、窒素と重水素とを、前記金属酸化膜に導入して、元素組成比で10パーセント以上の窒素を前記金属酸化膜に含有させる工程と、
を備えるとともに、
前記金属酸化膜を形成する工程の後、前記窒素と重水素を前記金属酸化膜に導入する工程の前に、熱処理を行う工程を、さらに備えることを特徴とする半導体装置の製造方法。
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JP2003403283A JP4073393B2 (ja) | 2003-12-02 | 2003-12-02 | 半導体装置の製造方法 |
US10/999,937 US7501335B2 (en) | 2003-12-02 | 2004-12-01 | Semiconductor device and manufacturing method of the same |
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JP2003403283A JP4073393B2 (ja) | 2003-12-02 | 2003-12-02 | 半導体装置の製造方法 |
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JP2005166929A JP2005166929A (ja) | 2005-06-23 |
JP4073393B2 true JP4073393B2 (ja) | 2008-04-09 |
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US7015153B1 (en) * | 2004-10-20 | 2006-03-21 | Freescale Semiconductor, Inc. | Method for forming a layer using a purging gas in a semiconductor process |
DE102007035990A1 (de) * | 2006-08-16 | 2008-02-21 | Mattson Thermal Products Gmbh | Verfahren zum Verbessern von Grenzflächenreaktionen an Halbleiteroberflächen |
JP5679622B2 (ja) * | 2008-01-31 | 2015-03-04 | 株式会社東芝 | 絶縁膜、およびこれを用いた半導体装置 |
US8633119B2 (en) * | 2011-05-10 | 2014-01-21 | Applied Materials, Inc. | Methods for manufacturing high dielectric constant films |
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JP2000058832A (ja) * | 1998-07-15 | 2000-02-25 | Texas Instr Inc <Ti> | オキシ窒化ジルコニウム及び/又はハフニウム・ゲ―ト誘電体 |
JP2000049349A (ja) * | 1998-07-15 | 2000-02-18 | Texas Instr Inc <Ti> | 集積回路に電界効果デバイスを製造する方法 |
US6576522B2 (en) * | 2000-12-08 | 2003-06-10 | Agere Systems Inc. | Methods for deuterium sintering |
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JP4091265B2 (ja) * | 2001-03-30 | 2008-05-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6825538B2 (en) * | 2002-11-20 | 2004-11-30 | Agere Systems Inc. | Semiconductor device using an insulating layer having a seed layer |
US6949433B1 (en) * | 2003-02-07 | 2005-09-27 | Fasl Llc | Method of formation of semiconductor resistant to hot carrier injection stress |
JP4112404B2 (ja) * | 2003-03-13 | 2008-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
JP4458527B2 (ja) * | 2003-11-20 | 2010-04-28 | セイコーエプソン株式会社 | ゲート絶縁膜、半導体素子、電子デバイスおよび電子機器 |
JP2005158998A (ja) * | 2003-11-26 | 2005-06-16 | Toshiba Corp | 半導体装置の製造方法 |
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